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71. 发明申请

US20070032095A1 Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer 有权
标题翻译：铜导体退火工艺采用低温沉积光吸收层进行高速光学退火
公开(公告)号：US20070032095A1
公开(公告)日：2007-02-08
申请号：US11199572
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/00
CPC分类号： B23K26/0738 , B23K26/0608 , B23K26/0876 , B23K26/361 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76886
摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.
摘要翻译：在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

72. 发明申请

US20070032054A1 Semiconductor substrate process using a low temperature deposited carbon-containing hard mask 有权
标题翻译：半导体衬底工艺使用低温沉积含碳硬掩模
公开(公告)号：US20070032054A1
公开(公告)日：2007-02-08
申请号：US11199593
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/26
CPC分类号： H01L21/0276 , C23C16/26 , C23C16/507 , H01J37/321 , H01L21/0332 , H01L21/0337 , H01L21/268 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/32139 , Y10S430/151
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.
摘要翻译：使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

73. 发明授权

US07094670B2 Plasma immersion ion implantation process 有权
标题翻译：等离子体浸没离子注入工艺
公开(公告)号：US07094670B2
公开(公告)日：2006-08-22
申请号：US11046661
申请日：2005-01-28
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
IPC分类号： H01L21/42 , H01L21/425 , H01L21/205
CPC分类号： H01J37/32082 , H01J37/321 , H01L21/67109 , H01L21/6831
摘要： A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.
摘要翻译：在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近，通过在工件上进行等离子体浸没离子注入将植入物种前体气体引入室中并产生等离子体，同时使沉积最小化并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件蚀刻阈值温度的温度范围内来最小化蚀刻。

74. 发明申请

US20060088655A1 RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor 有权
标题翻译： RF测量反馈控制和等离子体浸入式离子注入反应器的诊断
公开(公告)号：US20060088655A1
公开(公告)日：2006-04-27
申请号：US10971772
申请日：2004-10-23
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Amir Al-Bayati , Andrew Nguyen , Biagio Gallo
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Amir Al-Bayati , Andrew Nguyen , Biagio Gallo
IPC分类号： C23C14/00 , C23C16/52
CPC分类号： H01J37/321 , C23C14/48 , C23C14/54 , H01J37/32412 , H01J37/32935
摘要： A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.
摘要翻译：在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中，然后将RF等离子体源功率耦合到反应器中的等离子体。它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值，随着时间的推移产生离子注入剂量相关值。

75. 发明申请

US20060073683A1 Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：使用具有低解离和低最小等离子体电压的电容耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US20060073683A1
公开(公告)日：2006-04-06
申请号：US11284975
申请日：2005-11-21
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
IPC分类号： H01L21/04
CPC分类号： H01J37/32357 , H01J37/32082 , H01J37/321 , H01J37/32412 , H01L21/2236
摘要： A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.
摘要翻译：将工件中的物质离子注入到选定的离子注入轮廓深度的方法包括将具有半导体材料的工件放置在等离子体反应器室的处理区域中或其附近的静电卡盘上，并向静电卡盘施加夹持电压。所述方法还包括将包括要离子植入的物质的前体气体引入所述室中并将RF偏压施加到所述静电卡盘，所述RF偏压具有对应于所述离子注入轮廓深度的偏置电平。

76. 发明申请

US20060019477A1 Plasma immersion ion implantation reactor having an ion shower grid 失效
标题翻译：具有离子喷淋格栅的等离子体浸没离子注入反应器
公开(公告)号：US20060019477A1
公开(公告)日：2006-01-26
申请号：US10896113
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32357 , H01L21/2236 , H01L21/31612
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid, and furnishing the selected species into the ion generation region in gaseous, molecular or atomic form and evacuating the process region at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region of about a factor of at least four. The process further includes applying plasma source power to generate a plasma of the selected species in the ion generation region, and applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region. The process also includes applying a sufficient bias voltage to at least one of: (a) the workpiece, (b) the grid, relative to at least one of: (a) the workpiece, (b) a plasma in the ion generation region, (c) a surface of the chamber, to accelerate the flux of ions to a kinetic energy distribution generally corresponding to the desired ion implantation depth profile in the workpiece.
摘要翻译：用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域，具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。该方法包括将工件放置在工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面，并且将所选择的物质以气态，分子或原子形式提供给离子产生区域并排空工艺区域其排气速率足以在离子喷淋格栅上从离子产生区域到达至少四倍的因子的过程区域产生压降。该方法还包括施加等离子体源功率以在离子产生区域中产生所选择的物质的等离子体，以及将栅极电位施加到离子淋浴栅格以产生离子通过栅格离子并进入过程区域的通量。该方法还包括向以下至少一个施加足够的偏置电压：（a）工件，（b）栅格，相对于以下至少一个：（a）工件，（b）离子产生区域中的等离子体，（c）室的表面，以将离子通量加速到通常对应于工件中期望的离子注入深度分布的动能分布。

77. 发明申请

US20050214478A1 Chemical vapor deposition plasma process using plural ion shower grids 有权
标题翻译：使用多个离子淋浴网格的化学气相沉积等离子体工艺
公开(公告)号：US20050214478A1
公开(公告)日：2005-09-29
申请号：US10873600
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C16/00 , C23C16/40 , C23C16/452 , C23C16/517
CPC分类号： C23C16/452 , C23C16/402 , C23C16/517
摘要： A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece is placed in the process region, so that a workpiece surface of the workpiece is generally facing a surface plane of the nearest one of the ion shower grids, and a gas mixture comprising a deposition precursor species is furnished into the ion generation region. The process region is evacuated at an evacuation rate sufficient to create a pressure drop across the plural ion shower grids between the ion generation and process regions whereby the pressure in the ion generation region is several times the pressure in the process region. The process further includes applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region and applying successive grid potentials to successive ones of the grids.
摘要翻译：化学气相沉积工艺在具有一组多个并联离子淋浴网格的反应室中进行，该平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴网格具有相互配准的多个孔口网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。将工件放置在工艺区域中，使得工件的工件表面通常面向最接近的一个离子淋浴栅格的表面，并且将包含沉积前体物质的气体混合物配备到离子产生区域中。处理区域以足以在离子产生和处理区域之间的多个离子淋浴栅格之间产生压降的抽空速率抽真空，由此离子产生区域中的压力是处理区域中压力的几倍。该方法还包括施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，并将连续的栅格电势施加到连续的栅极。

78. 发明申请

US20050191828A1 Method for ion implanting insulator material to reduce dielectric constant 有权
标题翻译：用于离子注入绝缘材料以降低介电常数的方法
公开(公告)号：US20050191828A1
公开(公告)日：2005-09-01
申请号：US11003000
申请日：2004-12-01
申请人： Amir Al-Bayati , Rick Roberts , Kenneth Collins , Ken MacWilliams , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Amir Al-Bayati , Rick Roberts , Kenneth Collins , Ken MacWilliams , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01J37/32 , H01L21/4763
CPC分类号： H01J37/32082 , H01J37/321 , H01L21/76254
摘要： An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.
摘要翻译：集成的微电子电路具有覆盖由堆叠的金属图案层和分离相邻的所述金属图案层的绝缘层的晶体管的多层互连结构。每个绝缘层是具有分布在电介质材料的体积内的多个气泡的介电材料，以降低材料的介电常数，气泡通过将气态物质离子注入电介质材料而形成。

79. 发明申请

US20180308664A1 PLASMA REACTOR WITH FILAMENTS AND RF POWER APPLIED AT MULTIPLE FREQUENCIES 审中-公开
公开(公告)号：US20180308664A1
公开(公告)日：2018-10-25
申请号：US15960382
申请日：2018-04-23
申请人： Kenneth S. Collins , Kartik Ramaswamy , Yue Guo , Shahid Rauf , Kallol Bera , James D. Carducci , Michael R. Rice
发明人： Kenneth S. Collins , Kartik Ramaswamy , Yue Guo , Shahid Rauf , Kallol Bera , James D. Carducci , Michael R. Rice
IPC分类号： H01J37/32 , C23C16/455
CPC分类号： H01J37/32183 , C23C16/4554 , H01J37/32091 , H01J37/321 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J2237/1825 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01L21/67069 , H01L21/6831
摘要： A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support. At least one bus is electrically connected to a conductor of each filament. An RF power source is configured to apply a first RF signal of a first frequency to the plurality of filaments at a first location on at least one bus, and to apply a second RF signal of different second frequency to the plurality of filaments at a different second location on the at least one bus.

80. 发明申请

US20180277340A1 PLASMA REACTOR WITH ELECTRON BEAM OF SECONDARY ELECTRONS 审中-公开
公开(公告)号：US20180277340A1
公开(公告)日：2018-09-27
申请号：US15948949
申请日：2018-04-09
申请人： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Gonzalo Antonio Monroy , Lucy Chen , Yue Guo , Eswaranand Venkatasubramanian
发明人： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Gonzalo Antonio Monroy , Lucy Chen , Yue Guo , Eswaranand Venkatasubramanian
IPC分类号： H01J37/32 , H01L21/02
CPC分类号： H01J37/32568 , C23C16/26 , C23C16/5096 , H01J37/32183 , H01J37/3244 , H01J37/32669 , H01J37/32715 , H01J2237/332 , H01J2237/334 , H01L21/02115 , H01L21/02274 , H01L21/0234 , H01L21/02351
摘要： An electron beam plasma reactor includes a plasma chamber having a side wall, an upper electrode, a workpiece support to hold a workpiece facing the upper electrode with the workpiece on the support having a clear view of the upper electrode, a first RF power source coupled to said upper electrode, a gas supply, a vacuum pump coupled to the chamber to evacuate the chamber, and a controller. The controller is configured to operate the first RF power source to apply an RF power to upper electrode, and to operate the gas distributor and vacuum pump, so as to create a plasma in an upper portion of the chamber that generates an electron beam from the upper electrode toward the workpiece and a lower electron-temperature plasma in a lower portion of the chamber including the workpiece.

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