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    • 72. 发明申请
    • POST-FABRICATION SELF-ALIGNED INITIALIZATION OF INTEGRATED DEVICES
    • 整合装置的自动对准自动化
    • US20150162528A1
    • 2015-06-11
    • US14626945
    • 2015-02-20
    • International Business Machines Corporation
    • Michele M. FranceschiniJohn P. Karidis
    • H01L45/00
    • H01L45/126H01L45/04H01L45/1226H01L45/144
    • A phase change memory (PCM) cell that includes a first electrode contacting a first layer of material having a first chemical composition. The PCM cell also includes a second layer of material having a second chemical composition and a second electrode contacting the first layer of material or the second layer of material. The PCM cell is configured for receiving at least one electrical current pulse flowing from the first electrode to the second electrode to locally heat a region of the first layer and the second layer to cause at least one of inter-diffusion and liquid mixing of the first layer of material and the second layer of material, resulting in a self-aligned region of phase change material having a chemical composition that is a mixture of the first chemical composition and the second chemical composition.
    • 一种相变存储器(PCM)单元,其包括接触具有第一化学成分的第一材料层的第一电极。 PCM单元还包括具有第二化学成分的第二层材料和与第一材料层或第二材料层接触的第二电极。 PCM单元被配置用于接收从第一电极流向第二电极的至少一个电流脉冲,以局部加热第一层和第二层的区域,以引起第一和第二层之间的至少一个相互扩散和液体混合 材料层和第二层材料,导致相变材料的自对准区域具有作为第一化学组成和第二化学组合物的混合物的化学组成的自对准区域。
    • 74. 发明授权
    • Low latency and persistent data storage
    • 低延迟和持久数据存储
    • US08880834B2
    • 2014-11-04
    • US14160590
    • 2014-01-22
    • International Business Machines Corporation
    • Blake G. FitchMichele M. FranceschiniAshish JagmohanTodd Takken
    • G06F12/00G06F3/06G06F12/02
    • G06F3/0611G06F3/0659G06F3/0688G06F11/1658G06F11/1666G06F12/02
    • Persistent data storage is provided by a computer program product that includes computer program code configured for receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.
    • 持续数据存储由计算机程序产品提供,该计算机程序产品包括被配置用于接收包括写入数据的低延迟存储命令的计算机程序代码。 写入数据被写入由以第一访问速度为特征的非易失性固态存储器技术实现的第一存储器件。 确认写入数据已成功写入第一个存储器件。 写入数据被写入由易失性存储器技术实现的第二存储器件。 当在第一存储装置中累积了预定量的数据时,第一存储装置中的数据的至少一部分被写入第三存储装置。 第三存储器件通过非易失性固态存储器技术来实现,其特征在于比第一存取速度慢的第二存取速度。