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71. 发明授权

US06300659B1 Thin-film transistor and fabrication method for same 有权
标题翻译：薄膜晶体管及其制造方法相同
公开(公告)号：US06300659B1
公开(公告)日：2001-10-09
申请号：US09459339
申请日：1999-12-13
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L2900
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L29/66757 , H01L29/78675
摘要： A thin-film transistor (TFT) which has a crystalline silicon active layer of excellent reliability and characteristics, and a method of fabricating such a TFT inexpensively are provided. In a TFT which has at least two low density impurity regions and a source/drain adjacent to a channel-forming region, catalyst elements which cause amorphous silicon to crystallize are included in the source/drain, and the density of said catalyst elements in the interface between the channel-forming region and the low-density impurity regions is less than that in the source/drain.
摘要翻译：提供具有优异的可靠性和特性的晶体硅有源层的薄膜晶体管（TFT）以及廉价地制造这种TFT的方法。在具有至少两个低密度杂质区域和与沟道形成区域相邻的源极/漏极的TFT中，在源极/漏极中包括引起非晶硅结晶的催化剂元件，并且所述催化剂元件的密度在沟道形成区域和低浓度杂质区域之间的界面小于源极/漏极中的界面。

72. 发明授权

US06261875B1 Transistor and process for fabricating the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US06261875B1
公开(公告)日：2001-07-17
申请号：US09432109
申请日：1999-11-02
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L21/2022 , H01L21/26506 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78618 , H01L29/78675 , H01L29/78678
摘要： A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallization of the silicon film, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. Otherwise, the catalyst element can be incorporated into the structure by introducing it into the impurity region by means of ion implantation and the like. Also a process for fabricating a thin film transistor, which comprises forming a gate electrode, a gate insulating film, and an amorphous silicon film on a substrate, implanting impurities into the amorphous silicon film to form source and drain regions as the impurity regions, introducing a catalyst element into the impurity region by adhering a coating containing the catalyst element of by means of ion doping and the like, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.
摘要翻译：一种制造薄膜晶体管的方法，包括使非晶硅膜结晶，在其上形成栅极绝缘膜和栅电极，以自对准的方式注入杂质，粘附含有催化剂元素的涂层，其加速了硅膜，并在低于衬底的变形温度的温度下退火所得到的结构，以激活掺杂的杂质。否则，可以通过离子注入等将催化剂元素引入到杂质区域中而将其结合到结构中。还有一种制造薄膜晶体管的方法，其包括在衬底上形成栅电极，栅极绝缘膜和非晶硅膜，将杂质注入到非晶硅膜中以形成源区和漏区作为杂质区，引入通过使含有催化剂元素的涂层通过离子掺杂等粘合而将催化剂元素进入杂质区域，并在低于基板的变形温度的温度下对所得结构退火以活化掺杂的杂质。

73. 发明授权

US06140165A Semiconductor device forming method 失效
标题翻译：半导体器件形成方法
公开(公告)号：US06140165A
公开(公告)日：2000-10-31
申请号：US709111
申请日：1996-09-06
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84
CPC分类号： H01L29/045 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757 , G09G2300/0408
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Nickel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650.degree. C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，镍或其他元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃下加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

74. 发明授权

US5962871A Method for producing semiconductor device 失效
公开(公告)号：US5962871A
公开(公告)日：1999-10-05
申请号：US743176
申请日：1996-11-05
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.

75. 发明授权

US5843225A Process for fabricating semiconductor and process for fabricating semiconductor device 失效
标题翻译：用于制造半导体的工艺和用于制造半导体器件的工艺
公开(公告)号：US5843225A
公开(公告)日：1998-12-01
申请号：US479720
申请日：1995-06-07
申请人： Toru Takayama , Yasuhiko Takemura , Hongyong Zhang , Shunpei Yamazaki
发明人： Toru Takayama , Yasuhiko Takemura , Hongyong Zhang , Shunpei Yamazaki
IPC分类号： H01L21/20 , H01L21/336 , H01L27/12 , H01L29/786 , C30B1/10
CPC分类号： H01L21/2022 , H01L21/2026 , H01L27/12 , H01L29/66757 , H01L29/78654 , H01L29/78675
摘要： A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon film on said insulator coating after its exposure to said plasma; and heat treating said silicon film in the temperature range of from 400.degree. to 650.degree. C. or at a temperature not higher than the glass transition temperature of the substrate. The nucleation sites are controlled by selectively exposing the amorphous silicon film to a plasma or by selectively applying a substance containing elements having a catalytic effect thereto. A process for fabricating a thin film transistor using the same is also disclosed.
摘要翻译：一种制造半导体的方法，该半导体在较低的结晶温度下并且在较短的时间内，其包括在基片上形成绝缘体涂层; 将所述绝缘体涂层暴露于等离子体; 在暴露于所述等离子体之后，在所述绝缘体涂层上形成非晶硅膜; 在400〜650℃的温度或不高于基板的玻璃化转变温度的温度下对所述硅膜进行热处理。通过选择性地将非晶硅膜暴露于等离子体或通过选择性地施加含有其催化作用的元素的物质来控制成核位点。还公开了使用其制造薄膜晶体管的工艺。

76. 发明授权

US5677549A Semiconductor device having a plurality of crystalline thin film transistors 失效
标题翻译：具有多个晶体薄膜晶体管的半导体器件
公开(公告)号：US5677549A
公开(公告)日：1997-10-14
申请号：US439937
申请日：1995-05-12
申请人： Toru Takayama , Hongyong Zhang , Yasuhiko Takemura
发明人： Toru Takayama , Hongyong Zhang , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/76
CPC分类号： H01L21/2022 , H01L27/1214 , H01L27/1229 , H01L27/1277
摘要： A semiconductor circuit having a plurality of crystalline thin film transistors possessing different electrical characteristics which are formed on a substrate having an active matrix region and a driver circuit region. At least one first thin film transistor comprising a first crystalline silicon film is formed on the active matrix region of the substrate, while at least one second thin film transistor comprising a second crystalline silicon film is formed on the driver circuit region. The crystalline film of each of the first thin film transistors contains a catalyst element capable of promoting the crystallization of silicon at a higher concentration than the crystalline film of each of the second thin film transistors.
摘要翻译：一种半导体电路，其具有形成在具有有源矩阵区域和驱动电路区域的基板上的具有不同电特性的多个晶体薄膜晶体管。在衬底的有源矩阵区域上形成至少一个包括第一晶体硅膜的第一薄膜晶体管，而在驱动电路区域上形成至少一个包括第二晶体硅膜的第二薄膜晶体管。每个第一薄膜晶体管的结晶膜含有能够促进比每个第二薄膜晶体管的晶体膜更高浓度的硅的结晶的催化剂元件。

77. 发明授权

US5481121A Semiconductor device having improved crystal orientation 失效
标题翻译：具有改善的晶体取向的半导体器件
公开(公告)号：US5481121A
公开(公告)日：1996-01-02
申请号：US248682
申请日：1994-05-25
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L23/544 , H01L27/01 , H01L29/167
CPC分类号： H01L21/2022 , H01L21/2026 , H01L27/1214 , H01L27/1229 , H01L29/78675 , G02F1/13454
摘要： Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film crystal-grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the crystalline silicon film crystal-grown in the direction vertical to the flow of carriers can be obtained.
摘要翻译：将镍引入到非晶硅膜上的外围电路部分和像素部分以使它们结晶。在形成栅电极等之后，通过掺杂杂质形成源极，漏极和沟道，并且照射激光以改善结晶。之后，形成电极/电线。由此，在周边电路部中的薄膜晶体管（TFT）由沿着与载流子流动平行的方向晶体生长的晶体硅膜构成的有源矩阵型液晶显示器，其像素部的TFT由可以获得在垂直于载流子的方向上晶体生长的晶体硅膜。

78. 发明授权

US07148094B2 Semiconductor device and method for its preparation 失效
标题翻译：半导体器件及其制备方法
公开(公告)号：US07148094B2
公开(公告)日：2006-12-12
申请号：US10808353
申请日：2004-03-25
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
IPC分类号： H01L21/336 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02609 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
摘要翻译：公开了一种半导体器件。半导体器件具有作为有源层区域的晶体硅膜。结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

79. 发明授权

US06765229B2 Method for producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06765229B2
公开(公告)日：2004-07-20
申请号：US09985394
申请日：2001-11-02
申请人： Hongyong Zhang , Yasuhiko Takemura , Toru Takayama
发明人： Hongyong Zhang , Yasuhiko Takemura , Toru Takayama
IPC分类号： H01L2976
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.
摘要翻译：在衬底101上设置在阻挡膜102上的硅膜通过掺杂Si +而被制成无定形的，并且在热退火过程中，从作为结晶促进催化剂的镍的区域100开始与衬底平行地结晶介绍。

80. 发明授权

US6121076A Method for producing semiconductor device 失效
公开(公告)号：US6121076A
公开(公告)日：2000-09-19
申请号：US905715
申请日：1997-08-04
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L21/00
CPC分类号： H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.

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