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71. 外观设计

USD544841S1 Connector for memory card 有权
标题翻译：存储卡连接器
公开(公告)号：USD544841S1
公开(公告)日：2007-06-19
申请号：US29260432
申请日：2006-05-25
申请人： Atsushi Nishio , Isao Suzuki , Masaki Sawafuji
设计人： Atsushi Nishio , Isao Suzuki , Masaki Sawafuji

72. 发明申请

US20070105015A1 Battery and method of producing the same 审中-公开
标题翻译：电池及其制造方法
公开(公告)号：US20070105015A1
公开(公告)日：2007-05-10
申请号：US10583583
申请日：2004-12-22
申请人： Noriyoshi Munenaga , Isao Suzuki , Takeshi Shimozono , Tetsuzo Kojima
发明人： Noriyoshi Munenaga , Isao Suzuki , Takeshi Shimozono , Tetsuzo Kojima
IPC分类号： H01M2/26 , H01M10/04
CPC分类号： H01M2/22 , H01M2/0404 , H01M2/18 , H01M2/24 , H01M2/263 , H01M10/0431 , Y10T29/49108
摘要： A battery including: a power generating element having a positive electrode, a negative electrode, and a separator; a battery case for housing the power generating element; a battery cover for closing the battery case; and a lead for electrically connecting a terminal provided for the battery cover and the positive electrode or the negative electrode, wherein a part in which the lead and the positive electrode or the negative electrode are electrically connected to each other is sandwiched by an insulating member.
摘要翻译：一种电池，包括：具有正极，负极和隔膜的发电元件; 用于容纳所述发电元件的电池壳体; 用于封闭电池盒的电池盖; 以及用于电连接设置用于电池盖的端子和正极或负极的引线，其中引线和正极或负极彼此电连接的部分被绝缘构件夹持。

73. 发明申请

US20070096688A1 Battery 审中-公开
标题翻译：电池
公开(公告)号：US20070096688A1
公开(公告)日：2007-05-03
申请号：US10578408
申请日：2004-11-02
申请人： Isao Suzuki , Takehito Matsubara , Noriyoshi Munenaga , Minoru Hirata , Seiji Nemoto , Takeshi Shimozono
发明人： Isao Suzuki , Takehito Matsubara , Noriyoshi Munenaga , Minoru Hirata , Seiji Nemoto , Takeshi Shimozono
IPC分类号： H02J7/00
CPC分类号： H01M2/0285 , H01M2/021 , H01M2/0275
摘要： A battery in which a power generating element is accommodated in a battery case, wherein the battery case is composed of a flexible sheet, and at least part of the power generating element is covered with a cover member. This prevents the inner face of the flexible sheet from being damaged.
摘要翻译：一种电池，其中发电元件容纳在电池壳体中，其中电池盒由柔性片构成，并且发电元件的至少一部分被盖构件覆盖。这防止了柔性片的内表面被损坏。

74. 发明授权

US07051991B2 Control valve 失效
标题翻译：控制阀
公开(公告)号：US07051991B2
公开(公告)日：2006-05-30
申请号：US10917451
申请日：2004-08-13
申请人： Isao Suzuki
发明人： Isao Suzuki
IPC分类号： F16K31/02
CPC分类号： F16K7/14 , F16K31/06 , F16K31/1225
摘要： An actuator operated by a solenoid and a force amplifying means utilizing hydraulic pressure are used in combination with a diaphragm, to thereby provide a diaphragm valve made of Teflon™, and which is compact in size, has low power consumption, and which is capable of exerting a large force. The force amplifying means mainly comprises a cylinder including cylinder portions having different cross-sectional areas and oil filled in the cylinder. A force amplification ratio is equal to a ratio between the cross-sectional areas of the cylinder portions. A plunger which receives a biasing force of a spring is provided on an upper side of the force amplifying means. The plunger is operated by a solenoid, and a driving force of the plunger is amplified by the force amplifying means and transmitted to the diaphragm, thus adjusting a degree of valve opening. A flow rate control valve of the present invention is free from the problems of conventional control valves, and used for controlling a flow rate of a fluid, such as a chemical liquid or an exceptionally high-purity liquid.
摘要翻译：由螺线管操作的致动器和利用液压的力放大装置与隔膜结合使用，从而提供由Teflon TM制成的隔膜阀，其尺寸紧凑，功耗低，并且其是能够施加很大的力量。力放大装置主要包括一个圆柱体，该圆柱体包括具有不同横截面面积的圆筒部分和填充在圆筒中的油。力放大率等于圆筒部分的横截面积之间的比率。接收弹簧的偏置力的柱塞设置在力放大装置的上侧。柱塞由螺线管操作，并且柱塞的驱动力被力放大装置放大并传递到隔膜，由此调节阀开度。本发明的流量控制阀没有常规控制阀的问题，用于控制诸如化学液体或特别高纯度液体的流体的流量。

75. 发明申请

US20060051664A1 Battery 有权
标题翻译：电池
公开(公告)号：US20060051664A1
公开(公告)日：2006-03-09
申请号：US10515650
申请日：2003-05-27
申请人： Hiroshi Tasai , Isao Suzuki , Takeshi Shimozono , Noriyoshi Munenaga , Tetsuzo Kojima , Takehito Matsubara
发明人： Hiroshi Tasai , Isao Suzuki , Takeshi Shimozono , Noriyoshi Munenaga , Tetsuzo Kojima , Takehito Matsubara
IPC分类号： H01M2/26 , H01M2/06
CPC分类号： H01M2/266 , H01M10/052 , H01M10/0587
摘要： The metal foil of the positive electrode 1a or the negative electrode 1b in the power generating element 1 is connected along the connecting plate portion 2b which is folded, twisted, and provided in a protruding condition from the main portion 2a of the current-collector connector 2; hence the shape of the current-collector connector 2 becomes easy to form, and a battery capable of enhancing current collection efficiency, reliability and workability can be provided.
摘要翻译：发电元件1中的正极1a或负极1b的金属箔沿着连接板部2b连接，连接板部2b被折叠，扭曲，并从突出状态设置在主体部2a上集电器连接器2; 因此容易形成集电体连接器2的形状，能够提供能够提高集电效率，可靠性和可加工性的电池。

76. 发明申请

US20050098748A1 Control valve 失效
标题翻译：控制阀
公开(公告)号：US20050098748A1
公开(公告)日：2005-05-12
申请号：US10917451
申请日：2004-08-13
申请人： Isao Suzuki
发明人： Isao Suzuki
IPC分类号： F16K7/16 , F16K7/14 , F16K31/06 , F16K31/12
CPC分类号： F16K7/14 , F16K31/06 , F16K31/1225
摘要： An actuator operated by a solenoid and a force amplifying means utilizing hydraulic pressure are used in combination with a diaphragm, to thereby provide a diaphragm valve made of Teflon™, and which is compact in size, has low power consumption, and which is capable of exerting a large force. The force amplifying means mainly comprises a cylinder including cylinder portions having different cross-sectional areas and oil filled in the cylinder. A force amplification ratio is equal to a ratio between the cross-sectional areas of the cylinder portions. A plunger which receives a biasing force of a spring is provided on an upper side of the force amplifying means. The plunger is operated by a solenoid, and a driving force of the plunger is amplified by the force amplifying means and transmitted to the diaphragm, thus adjusting a degree of valve opening. A flow rate control valve of the present invention is free from the problems of conventional control valves, and used for controlling a flow rate of a fluid, such as a chemical liquid or an exceptionally high-purity liquid.
摘要翻译：由螺线管操作的致动器和利用液压的力放大装置与隔膜结合使用，从而提供由Teflon TM制成的隔膜阀，其尺寸紧凑，功耗低，并且其是能够施加很大的力量。力放大装置主要包括一个圆柱体，该圆柱体包括具有不同横截面面积的圆筒部分和填充在圆筒中的油。力放大率等于圆筒部分的横截面积之间的比率。接收弹簧的偏置力的柱塞设置在力放大装置的上侧。柱塞由螺线管操作，并且柱塞的驱动力被力放大装置放大并传递到隔膜，从而调节阀开度。本发明的流量控制阀没有常规控制阀的问题，用于控制诸如化学液体或特别高纯度液体的流体的流量。

77. 发明授权

US06619991B2 Connector for memory card 失效
公开(公告)号：US06619991B2
公开(公告)日：2003-09-16
申请号：US10070096
申请日：2002-02-27
申请人： Atsushi Nishio , Takashi Kawasaki , Isao Suzuki
发明人： Atsushi Nishio , Takashi Kawasaki , Isao Suzuki
IPC分类号： H01R2400
CPC分类号： H01R12/7094 , H01R12/592 , H01R12/721 , H01R12/87 , H01R13/41 , H01R13/633 , H01R13/635
摘要： A connector for a memory card 11 comprises the housing 12, the plate 14, the guide plate 16, the lock system 18, and the connector pin keeping part 20. Because the connector pin keeping part 20 is formed as horizontally bridged to a rear surface of the housing 12, and also the press-fitting part 40d of the connector pin 40 is press-fitted with a perpendicular state, the connector for a memory card 11 not only can be miniaturized but also can achieve a reduced thickness by restricting an amount protruding to a rear side within a small volume. Therefore, because a shape of the connector pin 40 is bent like a L-shape and the fixing hole 20a of the connector pin keeping part 20 is extended in an up-down direction and formed in the housing 12, it can promote the miniaturization and reduced thickness of the connector for a memory card 11. As a result, reducing a weight of the connector for a memory card 11 can also be attained.

78. 发明授权

US06543815B2 Tube joint and method of constructing the same 失效
公开(公告)号：US06543815B2
公开(公告)日：2003-04-08
申请号：US09943001
申请日：2001-08-31
申请人： Isao Suzuki
发明人： Isao Suzuki
IPC分类号： F16L2500
CPC分类号： F16L19/0283 , F16L47/04
摘要： The present invention relates to a method of constructing a tube joint wherewith one end T1 of a tubing T is heated to be softened; the softened end T1 of the tubing T is inserted into a drop-off prevention ring 30; the end T1 of the tubing T is upset by means of an upsetting core 50 such that the anchoring portion 35 of the drop-off prevention ring 30 bites into the softened end T1 of the tubing T; and the end T1 of the tubing T is cooled to be hardened with the anchoring portion 35 of the drop-off prevention ring 30 being kept biting into it, and to such tube joint.

79. 发明授权

US06118280A Method for detecting defects in dielectric film 失效
标题翻译：电介质膜缺陷检测方法
公开(公告)号：US06118280A
公开(公告)日：2000-09-12
申请号：US49201
申请日：1998-03-27
申请人： Hideki Matsunaga , Isao Suzuki , Hiroshi Tomita , Shiro Takeno , Akira Okada
发明人： Hideki Matsunaga , Isao Suzuki , Hiroshi Tomita , Shiro Takeno , Akira Okada
IPC分类号： G01N27/00 , G01N1/28 , G01N21/84 , H01L21/66
CPC分类号： G01N21/8422 , G01N1/2813
摘要： Disclosed are a method and an apparatus for detecting a defect in a dielectric film. The dielectric film is electrified in an electrolyte solution containing a metal in such a manner the dielectric film is charged negative, thereby the metal is deposited on the dielectric film at a position corresponding to the defect. The detecting method has a first deposition step for forming a first metal deposit on the dielectric film in an annular form surrounding the position corresponding to the defect; and a second deposition step for forming a second metal deposit located on the position corresponding to the defect, on the dielectric film. The detecting apparatus has a vessel for accommodating the electrolyte solution; a first electrode for electrifying the dielectric film and a second electrode; and an electric power source for controlably applying a voltage to electrifying between the first electrode and the second electrode in which a value and a direction of the applied voltage is variable.
摘要翻译：公开了一种用于检测电介质膜中的缺陷的方法和装置。电介质膜以含有金属的电解质溶液的方式通电，使电介质膜带电为负电荷，从而在对应于该缺陷的位置处将金属沉积在电介质膜上。检测方法具有第一沉积步骤，用于以包围与缺陷相对应的位置的环形形式在电介质膜上形成第一金属沉积物; 以及第二沉积步骤，用于在所述电介质膜上形成位于与所述缺陷相对应的位置上的第二金属沉积物。检测装置具有用于容纳电解质溶液的容器; 用于使所述电介质膜带电的第一电极和第二电极; 以及用于可控制地施加电压以在所述第一电极和所述第二电极之间通电的电源，其中所述施加电压的值和方向可变。

80. 发明授权

US5970368A Method for manufacturing polycrystal semiconductor film 失效
标题翻译：多晶半导体膜的制造方法
公开(公告)号：US5970368A
公开(公告)日：1999-10-19
申请号：US939660
申请日：1997-09-29
申请人： Hideyuki Sasaki , Michihiro Oose , Isao Suzuki , Shiro Takeno , Mitsuhiro Tomita , Yoshito Kawakyu , Yuki Matsuura , Hiroshi Mitsuhashi
发明人： Hideyuki Sasaki , Michihiro Oose , Isao Suzuki , Shiro Takeno , Mitsuhiro Tomita , Yoshito Kawakyu , Yuki Matsuura , Hiroshi Mitsuhashi
IPC分类号： H01L21/20 , H01L21/205 , H01L29/04
CPC分类号： H01L21/2026
摘要： There is disclosed a method for manufacturing a polycrystal semiconductor film comprising the steps of applying a high energy beam to a surface of a semiconductor film comprising an amorphous or a polycrystal semiconductor provided on a surface of a substrate to melt only the semiconductor film, and solidifying the film via a solid and liquid coexisting state to form a semiconductor film comprising a polycrystal semiconductor having a large grain diameter, by heating a liquid part using a difference in an electric resistance in the liquid and solid coexisting state to heat only the liquid part, and by extending the solidification time until the completion of solidifying of the molten liquid crystal film. Furthermore, as the base film of the semiconductor film, a material having a melting point of 1600.degree. C. and a thermal conductivity of 0.01 cal/cm.s..degree. C. is used to suppress heat dissipation from the molten liquid of the semiconductor to the substrate so that time until the complete solidification can be prolonged. Furthermore, the beam is irradiated so as to form a standing wave at a predetermined position of the surface of the semiconductor film to generate the heat density distribution having the same cycle with the standing wave and to melt the semiconductor film with the result that a polycrystal semiconductor film comprising a uniform and a large crystal grains by controlling the distribution of the crystal nuclei at the interface between the base film and the substrate.
摘要翻译：公开了一种制造多晶半导体膜的方法，包括以下步骤：将高能束施加到包括设置在基板表面上的非晶或多晶半导体的半导体膜的表面，以仅熔化半导体膜，并固化通过固体和液体共存状态形成包含具有大粒径的多晶半导体的半导体膜，通过使用液体中的电阻差和固体共存状态加热液体部分以仅加热液体部分，并延长凝固时间直到熔融液晶膜凝固完成。此外，作为半导体膜的基膜，具有熔点为1600℃，导热率为0.01cal / cm 3的材料。使用DEG来抑制从半导体的熔融液体到基板的散热，从而可以延长直到完全凝固的时间。此外，照射光束以在半导体膜的表面的预定位置处形成驻波，以产生具有与驻波相同周期的热密度分布并熔化半导体膜，结果是多晶通过控制在基膜和基板之间的界面处的晶核的分布而包含均匀和大的晶粒的半导体膜。

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