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71. 发明授权

US5586282A Memory system employing pipeline process for accessing memory banks 失效
标题翻译：采用流水线处理存储器的存储器系统
公开(公告)号：US5586282A
公开(公告)日：1996-12-17
申请号：US340312
申请日：1994-11-14
申请人： Hideyuki Iino , Hiromasa Takahashi
发明人： Hideyuki Iino , Hiromasa Takahashi
IPC分类号： G06F12/06 , G06F13/42
CPC分类号： G06F12/0607 , G06F12/06 , G06F13/4243
摘要： A memory access system employs a pipe-line process in which access can be carried out for a microprocessor using one cycle of two clocks and for a microprocessor using one cycle of one clock. Access speed of a main memory can be considerably improved ensuring applicability in general use. A transition request signal to a pipe-line is received, a control signal that continues as long as the cycle number corresponding to at least the address first-out number of the pipe-line immediately after the start of the pipe-line operation is produced. Concurrently, a data complete signal indicating the completion of data access for a bank is produced during the time that either of the above two signals is also generating an address latch signal synchronized to a clock signal and routed to respective banks, for executing high speed data access.
摘要翻译：存储器访问系统采用管线处理，其中可以对使用两个时钟的一个周期的微处理器以及使用一个时钟的一个周期的微处理器执行访问。可以大大提高主存储器的访问速度，确保在一般使用中的适用性。接收到管线的转换请求信号，产生一个控制信号，只要产生与管线运行开始之后的至少管道地址先出号码对应的循环数，。同时，在上述两个信号之一也产生与时钟信号同步的地址锁存信号并被路由到各个存储体的时间期间产生指示存储体的数据访问完成的数据完成信号，以执行高速数据访问。

72. 发明授权

US5584005A Virtual memory address translation apparatus and method using link, auxiliary link and page tables 失效
标题翻译：虚拟内存地址转换装置和方法使用链接，辅助链接和页表
公开(公告)号：US5584005A
公开(公告)日：1996-12-10
申请号：US123474
申请日：1993-09-20
申请人： Hitoshi Miyaoku , Hiromasa Takahashi
发明人： Hitoshi Miyaoku , Hiromasa Takahashi
IPC分类号： G06F12/10 , G06F12/02
CPC分类号： G06F12/0292
摘要： In a method and apparatus for address translation for translating a 64-bit virtual address into a real address, the 64-bit virtual address comprises a segment number, a page index and a page offset. When this virtual address is translated into a real address, high order bits of the segment number are first input to a hash generation circuit to obtain a hash address of a link table, and this link table is retrieved by an address obtained by adding lower order bits of the segment number as an offset to obtain tag information of the virtual address and a base address of a page table. Next, the tag information of the virtual address obtained in this manner is compared with the original segment number, and the base address of the page table is judged as correct when they coincide with each other. The page table is retrieved by an address obtained by adding a page index as an offset to this base address to obtain a page frame number, and the real address is obtained by combining the original page offset with the page frame number. According to this construction, address translation can be carried out at a higher speed while maintaining compatibility with the 32-bit virtual address.
摘要翻译：在用于将64位虚拟地址转换为实际地址的地址转换的方法和装置中，64位虚拟地址包括段号，页索引和页偏移。当该虚拟地址被转换为实际地址时，首先将片段编号的高位进行输入到散列生成电路以获得链接表的散列地址，并且通过将较低次序分段号的比特作为偏移量，以获得虚拟地址的标签信息和页表的基地址。接下来，将以这种方式获得的虚拟地址的标签信息与原始段号进行比较，并且当它们彼此一致时，判断页表的基址是正确的。通过将页索引作为偏移量添加到该基地址而获得的地址来获取页表，以获得页框号，并且通过将原始页偏移量与页框号组合来获得实地址。根据这种结构，可以以更高的速度进行地址转换，同时保持与32位虚拟地址的兼容性。

73. 发明授权

US08238064B2 Magnetic head and magnetic recording apparatus 有权
标题翻译：磁头和磁记录装置
公开(公告)号：US08238064B2
公开(公告)日：2012-08-07
申请号：US12315525
申请日：2008-12-03
申请人： Masaki Yamada , Hiromasa Takahashi
发明人： Masaki Yamada , Hiromasa Takahashi
IPC分类号： G11B5/10 , G11B5/33
CPC分类号： G11B5/332 , B82Y25/00 , G01R33/093 , G01R33/1284 , G11B5/3909
摘要： Embodiments of the present invention provide an accumulation element with high resolving power and high output suitable for magnetic recording and reproducing at high recording density. According to one embodiment, a plurality of spin injection parts and are provided to increase the total amount of spin electrons. The spin accumulation element is composed of a non-magnetic conductor, a first magnetic conductor, a second magnetic conductor, and a third magnetic conductor, each of which are in contact with the non-magnetic conductor through the tunneling junction. An output voltage due to the spin accumulation effect is detected as a potential difference between the non-magnetic conductor and the third magnetic conductor. The first magnetic conductor of the first spin injection part is fixed by a first antiferromagnetic conductor and the second magnetic conductor of the second spin injection part is fixed by a second antiferromagnetic conductor so that their directions of magnetization are anti-parallel to each other.
摘要翻译：本发明的实施例提供了一种具有高分辨率和高输出的累积元件，其适用于在高记录密度下的磁记录和再现。根据一个实施例，提供多个自旋注入部分并且被提供以增加自旋电子的总量。自旋累积元件由非磁性导体，第一磁性导体，第二磁性导体和第三磁性导体组成，它们都通过隧道结与非磁性导体接触。检测由于自旋累积效应引起的输出电压作为非磁性导体和第三磁性导体之间的电位差。第一自旋注入部分的第一磁性导体由第一反铁磁导体固定，第二自旋注入部分的第二磁性导体由第二反铁磁导体固定，使得它们的磁化方向彼此反平行。

74. 发明申请

US20120124332A1 VECTOR PROCESSING CIRCUIT, COMMAND ISSUANCE CONTROL METHOD, AND PROCESSOR SYSTEM 有权
标题翻译：矢量处理电路，指令发布控制方法和处理器系统
公开(公告)号：US20120124332A1
公开(公告)日：2012-05-17
申请号：US13279482
申请日：2011-10-24
申请人： GE Yi , Yoshimasa Takebe , Hiromasa Takahashi
发明人： GE Yi , Yoshimasa Takebe , Hiromasa Takahashi
IPC分类号： G06F9/302 , G06F9/44
CPC分类号： G06F9/30014 , G06F9/30109 , G06F9/30149 , G06F9/3836
摘要： A vector processing circuit includes a vector register file including a plurality of array elements, a command issuance control circuit, and a plurality of pipeline arithmetic units. Each pipeline arithmetic unit performs arithmetic processing of data stored in the array elements indicated as a source by one command in parts through a plurality of cycles and stores the result in the array elements indicated as a destination by the one command through a plurality of cycles. When data word length of a preceding command is longer than that of a subsequent command, the command issuance control circuit changes data sizes of the array elements in accordance with data word length of the command and determines whether there is register interference between the array element to be processed at a non-head cycle of the preceding command, and the array element to be processed at a head cycle of the subsequent command.
摘要翻译：矢量处理电路包括包括多个阵列元素的矢量寄存器文件，命令发布控制电路和多个流水线运算单元。每个流水线运算单元通过多个周期以部分方式，通过一个命令对存储在源表示的数组元素中的数据进行算术处理，并将该结果存储在通过多个周期的一个命令作为目的地表示的数组元素中。当前一个命令的数据字长度大于后续命令的数据字长时，命令发布控制电路根据命令的数据字长度改变数组元素的数据大小，并确定数组元素与在前一个命令的非头循环处理，以及要在后续命令的头循环处理的数组元素。

75. 发明申请

US20110233700A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY USING SAME 失效
标题翻译： MAGNETORESISTANCE效应元件和磁记忆体单元和磁性随机存取存储器
公开(公告)号：US20110233700A1
公开(公告)日：2011-09-29
申请号：US13133177
申请日：2009-11-16
申请人： Jun Hayakawa , Hiromasa Takahashi
发明人： Jun Hayakawa , Hiromasa Takahashi
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , H01F10/16 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350° or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and a low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation.
摘要翻译：公开了配备有氧化镁钝化层的磁阻效应元件和使用所述元件的高速，超低功耗的非易失性存储器。提供了由铁磁性自由层，绝缘层和强磁性固定层构成的隧道磁阻效应（TMR）膜，并且在保护层和取向控制层的侧壁上设置MgO钝化层，从而抑制由于350°以上的热处理，每层的隧道磁阻效应（TMR）元件的元素扩散，并获得具有稳定的高输出读数和低电流写入特性的磁存储单元和磁随机存取存储器。此外，当在铁磁层中使用CoFeB并且在绝缘层中使用MgO时，优选MgO钝化层具有（001）取向。

76. 发明授权

US07732005B2 Method for producing recording medium, recording medium employing said method, and information recording and reproducing apparatus 失效
标题翻译：用于制造记录介质的方法，采用所述方法的记录介质以及信息记录和再现装置
公开(公告)号：US07732005B2
公开(公告)日：2010-06-08
申请号：US11134399
申请日：2005-05-23
申请人： Yuko Tsuchiya , Susumu Soeya , Hiromasa Takahashi
发明人： Yuko Tsuchiya , Susumu Soeya , Hiromasa Takahashi
IPC分类号： B28B3/00 , B05D5/10 , G11B5/71 , C03C15/00
CPC分类号： G11B11/10582 , B82Y10/00 , G11B5/743 , G11B5/855 , G11B11/10528 , G11B11/10532 , G11B11/10584 , G11B2005/0005 , G11B2005/0021 , G11B2005/0029 , Y10T428/11
摘要： A method for producing a recording medium provides good throughput for mass production and reduces cost. The method facilitates the control of the shape or dimensions of a pattern obtained by microfabrication, allows an accurate pattern transfer, and provides superior uniformity. A magnetic layer is formed on a substrate. A nano-particle film 16 is formed on a desired portion on the magnetic layer. Using the nano-particle film as a mask, the magnetic layer is cut. A micropattern with concavities and convexities is formed on the magnetic layer by removing the nano-particle film.
摘要翻译：一种记录介质的制造方法为大量生产提供了良好的生产量并且降低了成本。该方法有助于控制通过微细加工获得的图案的形状或尺寸，允许精确的图案转印，并提供优异的均匀性。在基板上形成磁性层。纳米颗粒膜16形成在磁性层上的所需部分上。使用纳米颗粒膜作为掩模，切割磁性层。通过除去纳米颗粒膜，在磁性层上形成具有凹凸的微图案。

77. 发明申请

US20080176107A1 Magnetic read head and magnetic read write system 失效
标题翻译：磁读头和磁读写系统
公开(公告)号：US20080176107A1
公开(公告)日：2008-07-24
申请号：US11984377
申请日：2007-11-16
申请人： Hiromasa Takahashi , Masaki Yamada
发明人： Hiromasa Takahashi , Masaki Yamada
IPC分类号： G11B5/33
CPC分类号： G11B5/3903 , G11B5/398 , Y10T428/11
摘要： To provide a magnetic head that is suited for high recording density magnetic read and write, and has little noise. A magnetic pinned layer is formed on a non-magnetic electrode layer via a first insulating layer, and a magnetic free layer is formed on a medium-side plane of the non-magnetic electrode layer via a second insulating layer. A circuit for flowing current between the non-magnetic electrode layer and the magnetic pinned layer via the first insulating layer, and a circuit for measuring voltage between the non-magnetic electrode layer and the magnetic free layer are connected to the magnetic free layer. The medium-side plane on which the magnetic free layer is formed may be a plane substantially parallel to the surface of the medium, or may be a plane tilted from the surface of the medium.
摘要翻译：提供适合高记录密度磁读写的磁头，噪音小。经由第一绝缘层在非磁性电极层上形成磁性被钉扎层，经由第二绝缘层在非磁性电极层的中间侧平面上形成无磁性层。用于经由第一绝缘层在非磁性电极层和磁性被钉扎层之间流动电流的电路和用于测量非磁性电极层和无磁性层之间的电压的电路连接到无磁性层。形成有磁性层的中间平面可以是基本上平行于介质表面的平面，也可以是从介质表面倾斜的平面。

78. 发明申请

US20070253121A1 SPIN ACCUMULATION DEVICE AND MAGNETIC SENSOR APPLIED WITH SPIN CURRENT CONFINED LAYER 审中-公开
标题翻译：旋转积分装置和应用于旋转电流限制层的磁传感器
公开(公告)号：US20070253121A1
公开(公告)日：2007-11-01
申请号：US11739795
申请日：2007-04-25
申请人： MASAKI YAMADA , Hiromasa Takahashi
发明人： MASAKI YAMADA , Hiromasa Takahashi
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/09 , H01F41/34 , H01L43/00
摘要： A spin accumulation device with high output, high resolution, and low noise. A spin current confined layer is located between a voltage-detection magnetic conductive material and a nonmagnetic conductive material. A spin current alone flows through the spin current confined layer. Due to the confinement of the spin current, since it is possible to prevent the spin current from flowing through excess portions other than the scatterer that exhibits resistance change, the detection efficiency of the spin accumulation device is dramatically increased.
摘要翻译：具有高输出，高分辨率和低噪声的自旋累积装置。自旋电流限制层位于电压检测导电材料和非磁性导电材料之间。单独的自旋电流流过自旋电流限制层。由于自旋电流的限制，由于可以防止自旋电流流过表现出电阻变化的散射体以外的多余部分，因此自旋累积装置的检测效率急剧增加。

79. 发明申请

US20050088787A1 Magnetic head and magnetic recording/reproducing device 有权
标题翻译：磁头和磁记录/再现装置
公开(公告)号：US20050088787A1
公开(公告)日：2005-04-28
申请号：US10931038
申请日：2004-09-01
申请人： Hiromasa Takahashi , Konchi Ito
发明人： Hiromasa Takahashi , Konchi Ito
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A magnetic head includes a first electrode layer, a first ferromagnetic electrode pair that is electrically connected to the first electrode layer, and a second ferromagnetic electrode pair that intersects with a current which flows between the first ferromagnetic electrode pairs and is electrically connected with the first electrode layer. The current is allowed to flow between the first ferromagnetic electrode pair through the first electrode layer to accumulate spin electrons in the first electrode layer. A direction of magnetization of the fourth ferromagnetic electrode layer changes upon application of an external magnetic field. The second ferromagnetic electrode pair is so arranged as to intersect with the current that flows between the first ferromagnetic electrode pair, to increase a rate of change in the output signal of the in-plane spin accumulation effect.
摘要翻译：磁头包括第一电极层，电连接到第一电极层的第一铁磁电极对和与在第一铁磁电极对之间流动并与第一电磁体电连接的电流相交的第二铁磁电极对电极层。允许电流通过第一电极层在第一铁磁电极对之间流动，以在第一电极层中积累自旋电子。第四铁磁性电极层的磁化方向在施加外部磁场时发生变化。第二铁磁电极对被布置为与在第一铁磁电极对之间流动的电流相交，以增加平面内自旋累积效应的输出信号的变化率。

80. 发明授权

US06643105B2 Magnetic head having magnetic shield layers 有权
标题翻译：具有磁屏蔽层的磁头
公开(公告)号：US06643105B2
公开(公告)日：2003-11-04
申请号：US10214102
申请日：2002-08-08
申请人： Kazuhiro Nakamoto , Hiroyuki Hoshiya , Takashi Kawabe , Hiromasa Takahashi , Hisashi Kimura , Katsuro Watanabe , Chiaki Ishikawa , Kaori Totsuka
发明人： Kazuhiro Nakamoto , Hiroyuki Hoshiya , Takashi Kawabe , Hiromasa Takahashi , Hisashi Kimura , Katsuro Watanabe , Chiaki Ishikawa , Kaori Totsuka
IPC分类号： G11B5127
CPC分类号： G11B5/3903 , G11B5/40
摘要： A magnetic head include a pair of magnetic shield layers, a pair of gap layers formed between the pair of magnetic shield layers, a magnetoresistive layer arranged between the pair of gap layers, and a pair of electrodes electrically connected to the magnetoresistive layer. At least one of the pair of magnetic shield layers is formed as a discontinuous multi-layer or as a mixed layer.
摘要翻译：磁头包括一对磁屏蔽层，一对间隔层形成在一对磁屏蔽层之间，一个磁阻层布置在一对间隙层之间，一对电极与磁阻层电连接。一对磁屏蔽层中的至少一个形成为不连续的多层或混合层。

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