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71. 发明申请

US20080292988A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20080292988A1
公开(公告)日：2008-11-27
申请号：US12124013
申请日：2008-05-20
申请人： Masaru Takeshita , Komei Hirahara
发明人： Masaru Takeshita , Komei Hirahara
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/0045 , C07C311/48 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/111 , Y10S430/123
摘要： This resist composition according to the present invention includes a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) which generates an acid upon exposure, wherein the acid generator component (B) includes an acid generator (B1) represented by a general formula (b1-6-1) shown below and an acid generator (B2) represented by a general formula (b1-6-2) shown below: (wherein, R40 represents a hydrogen atom or an alkyl group; R41 represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, a carboxyl group or a hydroxyalkyl group; R42 and R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxyl group or a hydroxyalkyl group; n0 to n3 each independently represents an integer of 0 to 3, with the proviso that n0+n1 is 5 or less; R13 each independently represents a linear or branched alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom, and two of R13 may be bonded mutually to form a ring structure; R14 represents a linear, branched or cyclic alkyl group, a linear, branched or cyclic halogenated alkyl group, an aryl group or an alkenyl group, which may contain a substituent group.).
摘要翻译：根据本发明的抗蚀剂组合物包括在酸性作用下在碱性显影液中显示出改变的溶解性的基础组分（A）和暴露时产生酸的酸产生剂组分（B），其中酸产生剂组分 B）包括由下述通式（b1-6-1）表示的酸产生剂（B1）和由以下所示的通式（b1-6-2）表示的酸产生剂（B2）：（其中R40表示氢原子或烷基; R 41表示卤素原子，卤代烷基，烷基，乙酰基，羧基或羟烷基; R 42和R 43各自独立地表示卤素原子，卤代烷基，烷基，乙酰基，烷氧基，羧基或羟烷基; n0〜n3各自独立地表示0〜3的整数，条件是n0 + n1为5以下; R13各自独立地表示直链或支链烷基 p为1〜10个碳原子，其中至少一个氢原子被氟原子取代，并且R 13中的两个可以相互键合以形成环结构; R 14表示可以含有取代基的直链，支链或环状烷基，直链，支链或环状卤代烷基，芳基或烯基。

72. 发明申请

US20070065748A1 Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权
标题翻译：用于光致抗蚀剂组合物的树脂，光致抗蚀剂组合物和形成抗蚀剂图
公开(公告)号：US20070065748A1
公开(公告)日：2007-03-22
申请号：US10557694
申请日：2003-06-02
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

73. 发明申请

US20060257784A1 Copolymer for semiconductor lithography and process for production thereof 失效
标题翻译：半导体光刻用共聚物及其制造方法
公开(公告)号：US20060257784A1
公开(公告)日：2006-11-16
申请号：US11430738
申请日：2006-05-09
申请人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
发明人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/0046
摘要： A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid. The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.
摘要翻译：一种用于半导体光刻的共聚物，其至少包含具有羧酸酯结构的重复单元（A），其通过酸和含羧基的重复单元（B）的作用而在碱中的溶解度增加，该共聚物经由（共）聚合至少一种产生重复单元的单体（A）的步骤（P）和形成重复单元（B）的步骤（Q），在含有重复单元（A）的（共））聚合物和/或提供重复单元（A）的单体和酸。该共聚物用于生产半导体，作为抗蚀剂聚合物，其粗糙度小，显影缺陷少，并且光刻性能如DOF等优异。

74. 发明授权

US5220088A Process for dimerizating n-butene 失效
标题翻译：二维N-BOTENE的过程
公开(公告)号：US5220088A
公开(公告)日：1993-06-15
申请号：US796328
申请日：1991-11-22
申请人： Kenji Fujiwara , Toshiyuki Fukushima , Masaru Takeshita , Nobukiyo Okawa , Noboru Takada , Akira Othu
发明人： Kenji Fujiwara , Toshiyuki Fukushima , Masaru Takeshita , Nobukiyo Okawa , Noboru Takada , Akira Othu
IPC分类号： B01J31/04 , B01J31/02 , B01J31/14 , B01J31/20 , B01J31/22 , C07B61/00 , C07C2/26 , C07C2/30 , C07C2/32 , C07C2/34 , C07C11/02
CPC分类号： C07C2/32 , B01J31/0237 , B01J31/0239 , B01J31/04 , B01J31/143 , B01J31/1805 , C07C2/30 , C07C2/34 , B01J2531/847 , B01J31/20 , C07C2531/04 , C07C2531/14 , C07C2531/20 , C07C2531/22
摘要： A process for the dimerization of n-butene wherein a Ziegler catalyst system composed of a nickel compound and an organoalkylaluminum is added, as a third component, with an amine and/or a quaternary ammonium chloride. The amine can be a primary, secondary or tertiary amine. This process makes it possible to selectively prepare isooctene having a low degree of branching while maintaining high catalytic activity.

75. 发明授权

US4994586A Method for preparing epoxy compound 失效
标题翻译：环氧化合物的制备方法
公开(公告)号：US4994586A
公开(公告)日：1991-02-19
申请号：US357201
申请日：1989-05-25
申请人： Nobumasa Arashiba , Takashi Shimizu , Masaru Takeshita , Akira Otsu
发明人： Nobumasa Arashiba , Takashi Shimizu , Masaru Takeshita , Akira Otsu
IPC分类号： C07D301/19 , C07D303/04
CPC分类号： C07D301/19 , C07D303/04
摘要： A novel method for preparing an epoxy compound is disclosed which comprises the step of reacting an olefin compound having 4 to 16 carbon atoms with an organic hydroperoxide in an inactive solvent in the presence of a molybdenum compound and at least one metal halide selected from the group consisting of halides of alkali metals and alkaline earth metals, in order to form the corresponding epoxy compound. Typical examples of the aforesaid metal halide include sodium chloride, potassium iodide, sodium bromide and barium chloride. According to the present invention, the epoxy compound having 4 to 16 carbon atoms can be prepared in an extremely high yield.

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