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    • 71. 发明授权
    • Fiberoptic polarizer and method of making the same
    • 光纤偏振片及其制作方法
    • US06535655B1
    • 2003-03-18
    • US09747069
    • 2000-12-21
    • Kenjiro HasuiToshihiko OnoToshio SasakiHiroki TakahashiYoshiaki Takeuchi
    • Kenjiro HasuiToshihiko OnoToshio SasakiHiroki TakahashiYoshiaki Takeuchi
    • G02B600
    • G02B6/12007G02B6/2726G02B6/2766
    • A fiber-optic polarizer made by a process comprised of providing a substrate, coupling or embedding an optical single mode fiber to the substrate, making a narrow trench across the fiber at an angle, thereby bifurcating the fiber core into a first fiber core end and a second fiber core end, inserting and securing a thin polarizing material of a monolithic, non-laminated structure into the narrow trench, such that a light spot size emitted from a first fiber core is completely encompassed by the polarizing material, and the light spot size emerging from the polarizing material is substantially collected within the mode field diameter of a second fiber core. The narrow trench having a width of about 30-50 &mgr;m, and the polarizing material having a thickness of about 15-50 &mgr;m. The polarizing material having a monolithic composition. Moreover, the inventive polarizer has good reliability in terms of mechanical durability and weathering, since polarizer is fabricated on substrate in which optical path is entirely sealed. This is a process that eliminates the need to use specialized fibers or fibers that are specially treated such as those with thermally expanded cores (TEC). The process is also an alignment-free process that enables easier and faster mass-fabrication. This process produces multiple polarizers at a time.
    • 通过包括提供衬底,将光学单模光纤耦合或嵌入到衬底的方法制成的光纤偏振器,以一定角度在光纤上形成狭窄的沟槽,从而将光纤芯分成第一光纤芯端,并且 第二光纤芯端,将单片非层叠结构的薄偏振材料插入并固定到窄沟槽中,使得从第一光纤芯发射的光斑尺寸完全被偏振材料包围,并且光点 从偏振材料出现的尺寸基本上被收集在第二纤维芯的模场直径内。 窄沟槽宽约30-50μm,偏振材料厚度约15-50μm。 偏振材料具有整体组成。 此外,本发明的偏振器在机械耐久性和耐候性方面具有良好的可靠性,因为在光路完全密封的基板上制造偏振器。 这是一种消除了使用特殊处理的特殊纤维或纤维(例如具有热膨胀芯(TEC)的纤维)的过程。 该过程也是一个无对准的过程,可以更容易和更快速地进行大规模生产。 该过程一次产生多个偏振器。
    • 80. 发明授权
    • Process for producing photovoltaic device
    • 光电器件生产工艺
    • US09012256B2
    • 2015-04-21
    • US13808738
    • 2011-09-28
    • Shinya NakanoYoshiaki TakeuchiMichio KondoTakuya Matsui
    • Shinya NakanoYoshiaki TakeuchiMichio KondoTakuya Matsui
    • H01L31/20H01L31/18H01L31/0376H01L31/0747
    • H01L31/202H01L31/03762H01L31/0747H01L31/1804Y02E10/547Y02P70/521
    • A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device (100) comprising a heterojunction cell (1) prepared by sequentially stacking an i-type amorphous silicon semiconductor layer (12) and an n-type amorphous silicon semiconductor layer (13) on top of a substrate (p-type crystalline Ge (11)), the process comprising a PH3 exposure treatment stage of adjusting the temperature of the substrate (11), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH3, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer (12) on the PH3-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer (13) on the i-type amorphous silicon semiconductor layer (12), and an electrode formation stage of forming electrodes (2, 3, 4) on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate (11).
    • 一种能够提高具有由p型结晶Ge(基板),i型非晶硅半导体层和n型非晶硅半导体构成的异质结的太阳能电池的发电特性的光电转换装置的制造方法 层。 一种用于制造光电器件(100)的方法,该光电器件(100)包括异质结电池(1),该异质结电池(1)通过将i型非晶硅半导体层(12)和n型非晶硅半导体层(13)依次层叠在基板 p型结晶Ge(11)),该方法包括将表面氧化膜从其中除去的衬底(11)的温度调节到规定温度的PH3曝光处理阶段,然后将衬底置于 真空室,并将衬底暴露于PH3,在暴露于PH3的衬底上沉积i型非晶硅半导体层(12)的i层沉积阶段,沉积n型非晶硅的n层沉积阶段 i型非晶硅半导体层(12)上的半导体层(13),以及在n型非晶硅半导体层的表面上形成电极(2,3,4)的电极形成级,以及背面 表面 的基板(11)。