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71. 发明申请

US20080268660A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080268660A1
公开(公告)日：2008-10-30
申请号：US12108589
申请日：2008-04-24
申请人： Takaharu Itani , Kenichi Yoshino , Takayuki Ito , Takashi Kawakami , Tetsuya Kugimiya
发明人： Takaharu Itani , Kenichi Yoshino , Takayuki Ito , Takashi Kawakami , Tetsuya Kugimiya
IPC分类号： H01L21/02 , H01L21/00
CPC分类号： H01L21/02087 , H01L21/26513 , H01L21/2686 , H01L21/67115 , H01L29/66575
摘要： A method of manufacturing a semiconductor device that involves a heat treatment of a semiconductor substrate, has removing a superficial layer from an upper surface of an edge part of said semiconductor substrate, a bevel surface of the edge part of said semiconductor substrate and a side surface of the edge part of said semiconductor substrate; and conducting the heat treatment of said semiconductor substrate by irradiating said semiconductor substrate with light having a pulse width of 0.1 milliseconds to 100 milliseconds from a light source after said superficial layer is removed.
摘要翻译：制造涉及半导体衬底的热处理的半导体器件的方法，从所述半导体衬底的边缘部分的上表面，所述半导体衬底的边缘部分的斜面以及侧表面的所述半导体衬底的边缘部分; 以及在去除所述表面层之后，从光源照射具有0.1毫秒至100毫微秒的脉冲宽度的光，从而对所述半导体衬底进行热处理。

72. 发明授权

US07253972B2 Telephoto lens system 有权
标题翻译：长焦镜头系统
公开(公告)号：US07253972B2
公开(公告)日：2007-08-07
申请号：US11208525
申请日：2005-08-23
申请人： Junichi Fujisaki , Takayuki Ito
发明人： Junichi Fujisaki , Takayuki Ito
IPC分类号： G02B13/02
CPC分类号： G02B13/02
摘要： A telephoto lens system of a four-lens-group arrangement includes a negative first lens group, a positive or negative second lens group, a negative third lens group and a positive fourth lens group. The telephoto lens system of the four-lens-group arrangement is constituted by less than six lens elements in total. The positive or negative second lens group is constituted by a positive lens element and a negative lens element which are cemented to each other, in this order from the object. The positive lens element has a convex surface with a larger curvature facing toward the object. The positive or negative second lens group satisfies the following condition: 0.8
摘要翻译：四透镜组布置的长焦透镜系统包括负第一透镜组，正或负第二透镜组，负第三透镜组和正第四透镜组。四透镜组布置的长焦透镜系统总共由少于六个透镜元件构成。正或负第二透镜组由从物体的顺序彼此粘合的正透镜元件和负透镜元件构成。正透镜元件具有面向物体的较大曲率的凸面。正或负第二透镜组满足以下条件：<？in-line-formula description =“In-line formula”end =“lead”？> 0.8

73. 发明授权

US07209300B2 Wide-angle lens system 有权
标题翻译：广角镜头系统
公开(公告)号：US07209300B2
公开(公告)日：2007-04-24
申请号：US11302163
申请日：2005-12-14
申请人： Sachiko Ryu , Takayuki Ito
发明人： Sachiko Ryu , Takayuki Ito
IPC分类号： G02B13/04 , G02B9/04
CPC分类号： G02B13/04
摘要： A wide-angle lens system includes a positive front lens group, a diaphragm, and a positive rear lens group. The front lens group includes a negative first-sub-lens group and a positive second-sub-lens group.The negative first-sub-lens group includes a negative lens element, a positive lens element, and a negative lens element.The front lens group satisfies the following conditions: 0.5
摘要翻译：广角镜头系统包括正前透镜组，光圈和正后透镜组。前透镜组包括负的第一子透镜组和正的第二子透镜组。负的第一子透镜组包括负透镜元件，正透镜元件和负透镜元件。前透镜组满足以下条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <0.75 ）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <| f < ＆lt;＆lt;＆lt;＆lt;＆lt;＆gt;＆lt; 1b＆lt; 1＆lt; 1.0（2）＆lt;？in-line-formula description =“In-line Formulas”end =“tail” -formulae description =“In-line Formulas”end =“lead”？> 0.35 <0.6（3）<？in-line-formula description =“In-line Formulas” end =“tail”？>其中f：整个透镜系统的焦距; f 1a：负第一子透镜组的焦距; f1b1：正二次透镜组的焦距; f 1比特：正二次透镜组的最大像侧表面的焦距; 1×1bi ：正二次透镜组的最大像侧表面的曲率半径; 和N 1比特：正二次透镜组的最大像侧透镜元件的折射率。

74. 发明申请

US20060126192A1 Wide-angle lens system 有权
标题翻译：广角镜头系统
公开(公告)号：US20060126192A1
公开(公告)日：2006-06-15
申请号：US11302163
申请日：2005-12-14
申请人： Sachiko Ryu , Takayuki Ito
发明人： Sachiko Ryu , Takayuki Ito
IPC分类号： G02B13/04
CPC分类号： G02B13/04
摘要： A wide-angle lens system includes a positive front lens group, a diaphragm, and a positive rear lens group. The front lens group includes a negative first-sub-lens group and a positive second-sub-lens group. The negative first-sub-lens group includes a negative lens element, a positive lens element, and a negative lens element. The front lens group satisfies the following conditions: 0.5
摘要翻译：广角镜头系统包括正前透镜组，光圈和正后透镜组。前透镜组包括负的第一子透镜组和正的第二子透镜组。负的第一子透镜组包括负透镜元件，正透镜元件和负透镜元件。前透镜组满足以下条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <0.75。。。（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 1＆lt; 1a＆gt; / f＆lt; 1b＆lt; 1.0。。。（2）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.35 1bi<0.6。。。（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中f：整个透镜系统的焦距; f 1a：负第一子透镜组的焦距; f1b1：正二次透镜组的焦距; f 1比特：正二次透镜组的最大像侧表面的焦距; 1×1bi ：正二次透镜组的最大像侧表面的曲率半径; 和N 1比特：正二次透镜组的最大像侧透镜元件的折射率。

75. 发明申请

US20060081801A1 Solenoid valve 有权
标题翻译：电磁阀
公开(公告)号：US20060081801A1
公开(公告)日：2006-04-20
申请号：US10541131
申请日：2004-10-19
申请人： Masaji Takahashi , Takayuki Ito
发明人： Masaji Takahashi , Takayuki Ito
IPC分类号： F16K31/02
CPC分类号： F16K31/0658 , F02M25/0836 , F02M2025/0845 , Y10T137/8667 , Y10T137/86759
摘要： A guide boss is provided in a diaphragm blocking the halfway portion of a channel; a valve disk is formed in the shape of a cylinder; the inner face of this cylinder-shaped valve disk is slidably engaged around the guide boss; and further, a valve port consisting of a plurality of long bores are formed in a diaphragm surrounding the guide boss. Thereby, fluid can responsively flow into the valve port when the valve disk is opened, and the follow-up of the fluid is accelerated.
摘要翻译：引导凸台设置在阻塞通道的中间部分的隔膜中; 阀盘形成为圆筒形状; 该圆柱形阀盘的内表面可滑动地接合在引导凸台周围; 此外，在围绕导向凸台的隔膜中形成有由多个长孔组成的阀口。因此，当阀盘打开时，流体可以响应地流入阀口，并且加速了流体的跟踪。

76. 发明授权

US07026205B2 Method for manufacturing semiconductor device, including multiple heat treatment 有权
标题翻译：制造半导体器件的方法，包括多次热处理
公开(公告)号：US07026205B2
公开(公告)日：2006-04-11
申请号：US10815931
申请日：2004-04-02
申请人： Takayuki Ito , Kyoichi Suguro
发明人： Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L21/8238 , H01L21/8234 , H01L21/336
CPC分类号： H01L21/823842
摘要： A semiconductor device manufacturing method having forming first and second insulating gate portions spaced from each other on a semiconductor substrate, selectively implanting the first conductivity type impurity ions to the first gate electrode and a surface layer of the semiconductor substrate adjacent to the first insulating gate portion, selectively implanting the second conductivity type impurity ions to the second gate electrode and the surface layer adjacent to the second insulating gate portion, after implanting the first and second conductivity types impurity ions, pre-annealing at a first substrate temperature, and after the pre-annealing, main-activating for the first and second types impurity ions at a second substrate temperature higher than the first substrate temperature for a treatment period shorter than a period of the pre-annealing.
摘要翻译：一种半导体器件制造方法，其具有形成在半导体衬底上彼此间隔开的第一和第二绝缘栅极部分，选择性地将第一导电类型杂质离子注入到第一栅电极和与第一绝缘栅极部分相邻的半导体衬底的表面层在将第一和第二导电类型的杂质离子注入到第二栅极电极和与第二绝缘栅极部分相邻的表面层之后，在第一衬底温度下进行预退火之后，以及在第一衬底温度之后，选择性地将第二导电型杂质离子注入在第一衬底温度高于第一衬底温度的第二衬底温度下处理短于预退火周期的处理期间，对第一和第二类杂质离子进行主要激活。

77. 发明申请

US20060074260A1 Method of producing a fluorine-containing compound 有权
标题翻译：含氟化合物的制造方法
公开(公告)号：US20060074260A1
公开(公告)日：2006-04-06
申请号：US11242776
申请日：2005-10-05
申请人： Yushi Kaneko , Takayuki Ito , Taizo Ono
发明人： Yushi Kaneko , Takayuki Ito , Taizo Ono
IPC分类号： C07C19/08 , C07C57/64
CPC分类号： C07B39/00 , C07C67/307 , C07C69/63
摘要： A method of producing a fluorine-containing compound, which contains the step of: fluorinating a substrate in a solvent with fluorine gas, wherein as said substrate, a substrate that cannot substantially undergo fluorinating reaction independently, is allowed to react, in the presence of a substrate that rapidly undergoes fluorinating reaction independently.
摘要翻译：一种制备含氟化合物的方法，其包括以下步骤：用氟气氟化溶剂中的基材，其中作为所述基材，独立地基本上不能进行氟化反应的基材在存在下进行反应快速独立地进行氟化反应的底物。

78. 发明申请

US20050062107A1 Semiconductor and method of manufacturing the same 有权
标题翻译：半导体及其制造方法
公开(公告)号：US20050062107A1
公开(公告)日：2005-03-24
申请号：US10924909
申请日：2004-08-25
申请人： Takayuki Ito , Kyoichi Suguro
发明人： Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L21/265 , H01L21/00 , H01L21/22 , H01L21/28 , H01L21/324 , H01L21/336 , H01L23/62
CPC分类号： H01L21/26506 , H01L21/28052 , H01L29/665 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor comprises a substrate including a single crystal semiconductor region, and a pattern including a line pattern provided on the substrate, the line pattern having a longitudinal direction differing from a crystal orientation of the single crystal semiconductor region.
摘要翻译：半导体包括包括单晶半导体区域的衬底和包括设置在衬底上的线图案的图案，该线图案具有与单晶半导体区域的晶体取向不同的纵向方向。

79. 发明申请

US20050048779A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050048779A1
公开(公告)日：2005-03-03
申请号：US10694046
申请日：2003-10-28
申请人： Takayuki Ito
发明人： Takayuki Ito
IPC分类号： H01L21/265 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/78 , H01L21/302 , H01L21/461
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/2686 , H01L21/324 , H01L21/823814 , H01L29/6656
摘要： There is disclosed a method of manufacturing a semiconductor device, comprising entirely implanting electrically inactive first impurity to one main surface of a semiconductor substrate, and carrying out heat treatment by light with respect to the semiconductor substrate to which the first impurity is implanted.
摘要翻译：公开了一种制造半导体器件的方法，包括将电惰性的第一杂质完全注入半导体衬底的一个主表面，并且相对于注入第一杂质的半导体衬底进行光的热处理。

80. 发明申请

US20050023577A1 Semiconductor device including a semiconductor substrate formed with a shallow impurity region, and a fabrication method for the same 失效
标题翻译：包括形成有浅杂质区域的半导体衬底的半导体器件及其制造方法
公开(公告)号：US20050023577A1
公开(公告)日：2005-02-03
申请号：US10868016
申请日：2004-06-16
申请人： Takayuki Ito
发明人： Takayuki Ito
IPC分类号： H01L21/02 , H01L21/265 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/8234 , H01L29/94 , H01L31/062
CPC分类号： H01L21/823814
摘要： A method of manufacturing a semiconductor device includes forming isolation regions, a gate insulator film and gate electrodes, implanting in the silicon substrate with impurity ions, annealing to recover crystallinity of the implanted silicon substrate without diffusing the impurity ions, depositing an interlayer insulator film on the isolation regions, the silicon substrate, and the gate electrodes, and heating the silicon substrate by irradiating a light having a wavelength that the light is absorbed by the silicon substrate without being absorbed by the interlayer insulator film, activating the impurity ions so as to form source and drain regions.
摘要翻译：制造半导体器件的方法包括形成隔离区域，栅极绝缘膜和栅极电极，用杂质离子注入到硅衬底中，进行退火以回收注入硅衬底的结晶度而不扩散杂质离子，将层间绝缘膜沉积在隔离区域，硅衬底和栅极电极，并且通过照射具有光被硅衬底吸收的波长的光而不被层间绝缘膜吸收来加热硅衬底，激活杂质离子，从而形成源区和漏区。

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