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71. 发明授权

US09368329B2 Methods and apparatus for synchronizing RF pulses in a plasma processing system 有权
标题翻译：用于在等离子体处理系统中同步RF脉冲的方法和装置
公开(公告)号：US09368329B2
公开(公告)日：2016-06-14
申请号：US13550719
申请日：2012-07-17
申请人： John C. Valcore, Jr. , Bradford J. Lyndaker , Harmeet Singh
发明人： John C. Valcore, Jr. , Bradford J. Lyndaker , Harmeet Singh
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/32146 , H01J37/32174
摘要： A synchronized pulsing arrangement for providing at least two synchronized pulsing RF signals to a plasma processing chamber of a plasma processing system is provided. The arrangement includes a first RF generator for providing a first RF signal. The first RF signal is provided to the plasma processing chamber to energize a plasma therein, the first RF signal representing a pulsing RF signal. The arrangement also includes a second RF generator for providing a second RF signal to the plasma processing chamber. The second RF generator has a sensor subsystem for detecting values of at least one parameter associated with the plasma processing chamber that reflects whether the first RF signal is pulsed high or pulsed low and a pulse controlling subsystem for pulsing the second RF signal responsive to the detecting the values of at least one parameter.
摘要翻译：提供了一种用于向等离子体处理系统的等离子体处理室提供至少两个同步脉冲RF信号的同步脉冲装置。该装置包括用于提供第一RF信号的第一RF发生器。第一RF信号被提供给等离子体处理室以激励其中的等离子体，第一RF信号表示脉冲RF信号。该装置还包括用于向等离子体处理室提供第二RF信号的第二RF发生器。第二RF发生器具有用于检测与等离子体处理室相关联的至少一个参数的值的传感器子系统，其反映第一RF信号是高电平脉冲还是脉冲低脉冲，以及响应于检测脉冲控制第二RF信号的脉冲控制子系统至少有一个参数的值。

72. 发明授权

US09177756B2 E-beam enhanced decoupled source for semiconductor processing 有权
标题翻译：用于半导体处理的电子束增强去耦源
公开(公告)号：US09177756B2
公开(公告)日：2015-11-03
申请号：US13357003
申请日：2012-01-24
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
IPC分类号： H01L21/3065 , C23F1/00 , H01J37/04 , H01J37/32
CPC分类号： H01J37/04 , H01J37/32018 , H01J37/32357 , H01J37/32596
摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed within the processing chamber separate from the substrate support. The system also includes a power supply electrically connected to the electrode. The power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.
摘要翻译：半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。该系统还包括与处理室分开限定的等离子体室。等离子体室被定义为产生等离子体。该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。该系统还包括设置在与衬底支撑件分开的处理室内的电极。该系统还包括电连接到电极的电源。电源被定义为向电极提供电力，以便将电子从电极释放到处理室中。

73. 发明授权

US09154631B2 Method and apparatus for identifying a conference call from an event record 有权
标题翻译：用于从事件记录识别电话会议的方法和装置
公开(公告)号：US09154631B2
公开(公告)日：2015-10-06
申请号：US13422767
申请日：2012-03-16
申请人： Joseph Patrick Thomas Goguen , Manish Sunder Punjabi , Carsten Michael Bergmann , Harmeet Singh , Christina Evelyn Lucey , Eric Reyes
发明人： Joseph Patrick Thomas Goguen , Manish Sunder Punjabi , Carsten Michael Bergmann , Harmeet Singh , Christina Evelyn Lucey , Eric Reyes
IPC分类号： H04L12/18 , H04M3/56 , H04N7/15
CPC分类号： H04M3/565 , H04M2203/2072
摘要： A method for identifying a conference call from a communication device, wherein the communication device includes a memory for storing a calendar event record. The method includes: parsing at least some of the calendar event record, wherein the parsing includes an automatic discovery feature; determining, based on the parsing, whether the calendar event record includes conference call scheduling information in relation to a scheduled conference call session; generating, based on the parsing, one or more identifiers for at least some of the conference call scheduling information; and storing in the memory the one or more identifiers. A host communication device and a non-host participant communication device can also be configured for performing the method.
摘要翻译：一种用于从通信设备识别电话会议的方法，其中所述通信设备包括用于存储日历事件记录的存储器。所述方法包括：解析所述日历事件记录中的至少一些，其中所述解析包括自动发现特征; 基于所述解析，确定所述日历事件记录是否包括关于调度的电话会议会话的电话会议调度信息; 基于所述解析生成用于所述电话会议调度信息中的至少一些的一个或多个标识符; 以及将所述一个或多个标识符存储在所述存储器中。还可以配置主机通信设备和非主机参与者通信设备来执行该方法。

74. 发明授权

US09111728B2 E-beam enhanced decoupled source for semiconductor processing 有权
标题翻译：用于半导体处理的电子束增强去耦源
公开(公告)号：US09111728B2
公开(公告)日：2015-08-18
申请号：US13356962
申请日：2012-01-24
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
IPC分类号： H01J37/077 , H01J37/065 , H01J37/32 , H01J37/16
CPC分类号： H01J37/32357 , H01J37/32376 , H01J37/32449 , H01J37/32596
摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.
摘要翻译：半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。该系统还包括与处理室分开限定的等离子体室。等离子体室被定义为产生等离子体。该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。该系统还包括用于将电子注入到处理室中以控制处理室内的电子能量分布的电子注入装置，从而控制处理室内的离子 - 自由基密度比。在一个实施例中，电子束源被定义为将电子束透过衬底支撑件上方并穿过衬底支撑件的处理室。

75. 发明授权

US08900402B2 Semiconductor processing system having multiple decoupled plasma sources 有权
标题翻译：具有多个解耦等离子体源的半导体处理系统
公开(公告)号：US08900402B2
公开(公告)日：2014-12-02
申请号：US13104923
申请日：2011-05-10
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
IPC分类号： H01L21/3065 , C23F1/08 , H01J37/32
CPC分类号： H01J37/32899 , H01J37/32633
摘要： A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.
摘要翻译：半导体衬底处理系统包括限定为在暴露于处理区域中支撑衬底的衬底支撑件。该系统还包括第一等离子体室，其被定义为产生第一等离子体并且将第一等离子体的反应性成分供应到处理区域。该系统还包括被定义为产生第二等离子体并且将第二等离子体的反应性组分供应到处理区域的第二等离子体室。第一和第二等离子体室被限定为独立控制。

76. 发明授权

US08644479B2 Method and apparatus for protecting moderator access for a conference call 有权
标题翻译：用于保护电话会议的主持人访问的方法和装置
公开(公告)号：US08644479B2
公开(公告)日：2014-02-04
申请号：US13423149
申请日：2012-03-16
申请人： Joseph Patrick Thomas Goguen , Manish Sunder Punjabi , Carsten Michael Bergmann , Harmeet Singh , Christina Evelyn Lucey , Eric Reyes
发明人： Joseph Patrick Thomas Goguen , Manish Sunder Punjabi , Carsten Michael Bergmann , Harmeet Singh , Christina Evelyn Lucey , Eric Reyes
IPC分类号： H04M3/42 , H04M11/00 , H04M1/00 , H04L12/16 , H04N7/14
CPC分类号： H04M1/72566 , H04L63/0407 , H04L63/10 , H04L63/168 , H04M1/72577 , H04M3/382 , H04M3/56 , H04M3/563 , H04M3/565 , H04M2201/42 , H04W4/08 , H04W12/08
摘要： A method for protecting moderator access using a communication device. The method includes: displaying an interface for editing a conference call profile, the conference call profile including conference call scheduling information including one or more addressees for communicating with a conference call server, wherein the conference call scheduling information further includes a moderator access code and a participant access code; generating an indicator for the conference call profile for excluding sending of the moderator access code to invited participants; and storing the conference call profile including the indicator in a memory of the communication device. A communication device can be configured to perform the method.
摘要翻译：一种使用通信设备保护主持人访问的方法。该方法包括：显示用于编辑会议呼叫简档的接口，所述电话会议简档包括包括用于与会议呼叫服务器进行通信的一个或多个收件人的电话会议调度信息，其中所述电话会议调度信息还包括主持人接入码和参与者访问代码; 生成用于电话会议简档的指示符，以排除向受邀参加者发送主持人访问代码; 以及将包括所述指示符的所述电话会议简档存储在所述通信设备的存储器中。通信设备可以被配置为执行该方法。

77. 发明申请

US20130021717A1 ELECTROSTATIC CHUCK WITH WAFER BACKSIDE PLASMA ASSISTED DECHUCK 有权
标题翻译：带背面等离子体辅助离心机的静电卡盘
公开(公告)号：US20130021717A1
公开(公告)日：2013-01-24
申请号：US13185968
申请日：2011-07-19
申请人： Harmeet Singh
发明人： Harmeet Singh
IPC分类号： H01L21/687
CPC分类号： H01L21/6831
摘要： An electrostatic chuck assembly useful in a plasma processing chamber, comprising a support surface on which a semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode which applies an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, at least one outlet in the support surface which delivers a heat transfer gas to an underside of the wafer, at least one gas passage connected to a source of heat transfer gas operable to supply heat transfer gas at a desired pressure to the at least one gas passage, and at least one cavity and plasma generating electrode along the at least one gas passage, the plasma generating electrode operable to form a dechucking plasma in the cavity, the dechucking plasma being effective to neutralize charges on the underside of the wafer and support surface of the electrostatic chuck and thereby reduce a residual sticking force between the wafer and the support surface.
摘要翻译：一种用于等离子体处理室的静电卡盘组件，包括：在处理室内的晶片时支撑半导体晶片的支撑表面;至少一个静电夹持电极，其将静电夹持力施加到支撑表面上的晶片当向夹持电极施加静电夹紧电压时，将支撑表面中的至少一个出口传送到晶片的下侧，将至少一个气体通道连接到可传导热量的热传递气体源将所需压力的气体转移到至少一个气体通道，以及沿着至少一个气体通道的至少一个空腔和等离子体产生电极，所述等离子体产生电极可操作以在空腔中形成解吸等离子体，所述除冰等离子体是有效的以抵消晶片的下侧和静电卡盘的支撑表面上的电荷，从而减少电荷在晶片和支撑表面之间的唾液粘滞力。

78. 发明申请

US20120289054A1 Semiconductor Processing System Having Multiple Decoupled Plasma Sources 有权
标题翻译：具有多个去耦等离子体源的半导体处理系统
公开(公告)号：US20120289054A1
公开(公告)日：2012-11-15
申请号：US13104925
申请日：2011-05-10
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32633 , H01J37/32899 , H01L21/3065
摘要： A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.
摘要翻译：半导体基板处理系统包括具有处理区域和基板支撑体的室。该系统包括设置在基板支撑件上方的室内的顶板组件。顶板组件包括分别形成在顶板组件的下表面中的第一组和第二组等离子体微室。气体供应通道的第一网络通过顶板组件形成，以将第一工艺气体流动到第一组等离子体微室，以转化为第一等离子体。通过顶板组件形成一组排气通道。第二组等离子体微室形成在排气通道组内。气体供应通道的第二网络通过顶板组件形成，以将第二工艺气体流动到第二组等离子体微室，以转化为第二等离子体。

79. 发明申请

US20120258607A1 E-Beam Enhanced Decoupled Source for Semiconductor Processing 审中-公开
标题翻译：用于半导体处理的电子束增强去耦源
公开(公告)号：US20120258607A1
公开(公告)日：2012-10-11
申请号：US13357044
申请日：2012-01-24
申请人： John Patrick Holland , Peter L.G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
发明人： John Patrick Holland , Peter L.G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
IPC分类号： H01L21/26 , H01L21/3065
CPC分类号： H01J37/32357
摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes a plurality of power delivery components defined to deliver power to the plurality of fluid transmission pathways, so as to generate supplemental plasma within the plurality of fluid transmission pathways. The plurality of fluid transmission pathways are defined to supply reactive constituents of the supplemental plasma to the processing chamber.
摘要翻译：半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。该系统还包括与处理室分开限定的等离子体室。等离子体室被定义为产生等离子体。该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。该系统还包括多个功率输送部件，其被定义成将功率输送到多个流体传输路径，以便在多个流体传输通路内产生补充等离子体。多个流体传输路径被限定为将补充等离子体的反应性成分提供给处理室。

80. 发明申请

US20120258601A1 E-Beam Enhanced Decoupled Source for Semiconductor Processing 有权
标题翻译：用于半导体处理的电子束增强去耦源
公开(公告)号：US20120258601A1
公开(公告)日：2012-10-11
申请号：US13357003
申请日：2012-01-24
申请人： John Patrick Holland , Peter L.G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
发明人： John Patrick Holland , Peter L.G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
IPC分类号： H01L21/3065
CPC分类号： H01J37/04 , H01J37/32018 , H01J37/32357 , H01J37/32596
摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed within the processing chamber separate from the substrate support. The system also includes a power supply electrically connected to the electrode. The power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.
摘要翻译：半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。该系统还包括与处理室分开限定的等离子体室。等离子体室被定义为产生等离子体。该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。该系统还包括设置在与衬底支撑件分开的处理室内的电极。该系统还包括电连接到电极的电源。电源被定义为向电极提供电力，以便将电子从电极释放到处理室中。

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