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71. 发明授权

US07453059B2 Technique for monitoring and controlling a plasma process 失效
标题翻译：监测和控制等离子体工艺的技术
公开(公告)号：US07453059B2
公开(公告)日：2008-11-18
申请号：US11678524
申请日：2007-02-23
申请人： Bon-Woong Koo , Ziwei Fang , Ludovic Godet , Vikram Singh , Vassilis Panayotis Vourloumis , Bernard G. Lindsay
发明人： Bon-Woong Koo , Ziwei Fang , Ludovic Godet , Vikram Singh , Vassilis Panayotis Vourloumis , Bernard G. Lindsay
IPC分类号： G01N27/26 , G01N33/00 , H01J49/40
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.
摘要翻译：用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。漂移管位于外壳中。提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。多个电极位于漂移管的靠近提取器电极的第一端。多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。离子检测器位于漂移管的第二端附近。离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

72. 发明申请

US20080044257A1 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 有权
标题翻译：温度控制离子植入技术
公开(公告)号：US20080044257A1
公开(公告)日：2008-02-21
申请号：US11770220
申请日：2007-06-28
申请人： Jonathan Gerald ENGLAND , Richard Stephen Muka , Edwin A. Arevalo , Ziwei Fang , Vikram Singh
发明人： Jonathan Gerald ENGLAND , Richard Stephen Muka , Edwin A. Arevalo , Ziwei Fang , Vikram Singh
IPC分类号： H01L21/677
CPC分类号： H01L21/67115 , H01J37/20 , H01J2237/2001 , H01J2237/31701 , H01J2237/336 , H01L21/67063 , H01L21/67069 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹持机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触，以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。该装置还可以包括后冷却站，以在离子注入之后冷却晶片。该设备还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。

73. 发明申请

US20070087574A1 CONFORMAL DOPING APPARATUS AND METHOD 有权
标题翻译：一致的装置和方法
公开(公告)号：US20070087574A1
公开(公告)日：2007-04-19
申请号：US11163307
申请日：2005-10-13
申请人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
发明人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
IPC分类号： H01L21/31 , H01L21/469 , B05C11/00
CPC分类号： H01J37/32623 , H01J37/32412 , H01J37/32697 , H01L21/2236 , H01L21/26506 , H01L21/26526 , H01L21/26586 , H01L29/66803
摘要： A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
摘要翻译：掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。惰性进料气体产生惰性离子。向衬底提取惰性离子，在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。

74. 发明申请

US20060063360A1 Technique for boron implantation 有权
标题翻译：硼植入技术
公开(公告)号：US20060063360A1
公开(公告)日：2006-03-23
申请号：US11227079
申请日：2005-09-16
申请人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
发明人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
IPC分类号： H01L21/04
CPC分类号： H01L21/2236 , H01J37/32082 , H01J37/32412 , H01L21/26513
摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
摘要翻译：公开了硼注入技术。在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。该装置可以包括反应室。该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

75. 发明授权

US06468384B1 Predictive wafer temperature control system and method 有权
标题翻译：预测晶圆温度控制系统及方法
公开(公告)号：US06468384B1
公开(公告)日：2002-10-22
申请号：US09710083
申请日：2000-11-09
申请人： Vikram Singh , Robert J. Whiting , Paul K. Shufflebotham , Ajay Saproo
发明人： Vikram Singh , Robert J. Whiting , Paul K. Shufflebotham , Ajay Saproo
IPC分类号： C23F100
CPC分类号： H01L21/67248 , H01J37/3299 , H01J2237/2001 , H01L21/6831
摘要： The present invention provides plasma processing systems and methods for providing a set-point temperature for substrates during plasma processing by controlling clamping force or RF power. The plasma processing system includes a plasma chamber, a controller, and an electrostatic power supply. The plasma chamber is arranged to receive an RF power and a source gas for producing plasma. The plasma chamber includes an electrostatic chuck for clamping a substrate in place during plasma processing. The electrostatic chuck includes an electrode and a sensor, which is arranged to monitor temperature of the substrate being processed. The controller is coupled to the sensor to receive the substrate temperature and is configured to generate a control signal for driving the substrate temperature to the set-point temperature. The electrostatic power supply is coupled between the controller and the electrode in the electrostatic chuck. The electrostatic power supply receives the control signal from the controller and generates a voltage adapted to clamp the substrate with a clamping force. In this configuration, the electrostatic power supply provides the voltage to the electrode to clamp the substrate such that the substrate temperature is driven to the set-point temperature.
摘要翻译：本发明提供等离子体处理系统和方法，用于通过控制夹紧力或RF功率在等离子体处理期间提供基板的设定点温度。等离子体处理系统包括等离子体室，控制器和静电电源。等离子体室被布置成接收用于产生等离子体的RF功率和源气体。等离子体室包括用于在等离子体处理期间将衬底夹持就位的静电吸盘。静电卡盘包括电极和传感器，其被设置为监测被处理的基板的温度。控制器耦合到传感器以接收衬底温度，并且被配置为产生用于将衬底温度驱动到设定点温度的控制信号。静电电源连接在控制器和静电吸盘中的电极之间。静电电源接收来自控制器的控制信号，并产生适合于用夹紧力夹紧衬底的电压。在该结构中，静电电源向电极提供电压以夹紧基板，使得基板温度被驱动到设定点温度。

76. 发明授权

US06042687A Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing 失效
标题翻译：改善等离子体半导体处理中的蚀刻和沉积均匀性的方法和装置
公开(公告)号：US06042687A
公开(公告)日：2000-03-28
申请号：US885346
申请日：1997-06-30
申请人： Vikram Singh , Brian McMillin , Tom Ni , Michael Barnes , Richard Yang
发明人： Vikram Singh , Brian McMillin , Tom Ni , Michael Barnes , Richard Yang
IPC分类号： H01J37/32 , H05H1/00 , H01L21/00
CPC分类号： H01J37/3244 , H01J37/321
摘要： A plasma processing system and method for processing substrates such as by chemical vapor deposition or etching. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a primary gas supply supplying a primary gas such as process gas into the chamber, a secondary gas supply supplying a secondary gas such as a substantially inert, a substrate passivating or a reactant scavenging gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the primary gas into a plasma state. The secondary gas is concentrated near the periphery of the substrate, improving etching/deposition uniformity across the substrate surface.
摘要翻译：一种等离子体处理系统和方法，用于通过化学气相沉积或蚀刻来处理衬底。该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，将诸如工艺气体的气体引入室中，将诸如基本惰性的二次气体，基底钝化或反应物清除气体的二次气体供给到腔室中，以及RF能量源，例如平面线圈，其感应耦合RF能量通过电介质构件并进入腔室以将主气体激发成等离子体状态。二次气体集中在衬底的周边附近，从而提高衬底表面的蚀刻/沉积均匀性。

77. 发明授权

US5968275A Methods and apparatus for passivating a substrate in a plasma reactor 失效
标题翻译：用于钝化等离子体反应器中的衬底的方法和装置
公开(公告)号：US5968275A
公开(公告)日：1999-10-19
申请号：US882222
申请日：1997-06-25
申请人： Changhun Lee , Vikram Singh , Yun-Yen Jack Yang
发明人： Changhun Lee , Vikram Singh , Yun-Yen Jack Yang
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213 , C23C16/00
CPC分类号： H01L21/02071 , H01J37/32633 , H01L21/31138
摘要： A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H.sub.2 O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.
摘要翻译：一种等离子体处理系统，其配置用于在金属蚀刻之后处理衬底。基板包括设置在其上的光致抗蚀剂层。等离子体处理系统包括等离子体产生区域和设置在等离子体产生区域和衬底之间的挡板。挡板包括设置在挡板中心区域的中央阻挡部分。挡板还包括围绕中心阻塞部分的环形多孔部分。环形多孔部分包括多个通孔，其构造成允许在等离子体产生区域中产生的H 2 O等离子体通过孔到达衬底的表面。等离子体处理系统还包括设置在挡板下方以在处理期间支撑基板的卡盘。

78. 植物专利

USPP10935P Mini plant Mentha arvensis `Himalaya` 失效
公开(公告)号：USPP10935P
公开(公告)日：1999-06-01
申请号：US855768
申请日：1997-04-22
申请人： Sushil Kumar , Bali Ram Tyagi , Janak Raj Bahl , Hari Singh , Vikram Singh , Ram Ujagir , Suman Preet Singh Khanuja , Ajit Kumar Shasany , Ram Sajivan Shukla , Abdul Sattar , Dwijendra Singh , Akhtar Haseeb , Vijay Pal Singh , Paltoo Ram , Kambod Singh , Saudan Singh , Surendra Pratap Singh , Nirmal Kumar Patra , Mansoor Alam , Arif Ali Naqvi , Muni Ram , Krishan Kumar Agarwal , Kailash Singh
发明人： Sushil Kumar , Bali Ram Tyagi , Janak Raj Bahl , Hari Singh , Vikram Singh , Ram Ujagir , Suman Preet Singh Khanuja , Ajit Kumar Shasany , Ram Sajivan Shukla , Abdul Sattar , Dwijendra Singh , Akhtar Haseeb , Vijay Pal Singh , Paltoo Ram , Kambod Singh , Saudan Singh , Surendra Pratap Singh , Nirmal Kumar Patra , Mansoor Alam , Arif Ali Naqvi , Muni Ram , Krishan Kumar Agarwal , Kailash Singh
摘要： A new and distinct hybrid plant named `Himalaya` (Mentha arvensis) characterized by its higher yield of oil which is rich in menthol, improved regeneration potential, vigorous growth, deep green broad thick leaves, pinkish white flowers and tolerance to rust such as alternaria leaf blight, corynespora leaf spot and powdery mildew.

79. 发明授权

US08664098B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08664098B2
公开(公告)日：2014-03-04
申请号：US13353993
申请日：2012-01-19
申请人： Ludovic Godet , Timothy J. Miller , Svetlana B. Radovanov , Anthony Renau , Vikram Singh
发明人： Ludovic Godet , Timothy J. Miller , Svetlana B. Radovanov , Anthony Renau , Vikram Singh
IPC分类号： H01L21/26 , C23F1/00 , C23C16/00 , H01L21/3065
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译：等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角到工件。

80. 发明授权

US08507372B2 Method for processing a substrate having a non-planar substrate surface 有权
标题翻译：用于处理具有非平面基板表面的基板的方法
公开(公告)号：US08507372B2
公开(公告)日：2013-08-13
申请号：US13480204
申请日：2012-05-24
申请人： George D. Papasouliotis , Vikram Singh , Heyun Yin
发明人： George D. Papasouliotis , Vikram Singh , Heyun Yin
IPC分类号： H01L21/425
CPC分类号： H01L21/2236 , H01L29/66803
摘要： A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.
摘要翻译：公开了一种用于对具有非平面表面的衬底进行保形加工的技术。该技术包括几个阶段。在第一阶段中，有效地处理衬底的某些表面。在第二阶段期间，处理这些表面以限制或消除这些表面的进一步加工。在第三阶段期间，处理衬底的其它表面。在一些应用中，在第一和第二阶段中处理垂直或基本垂直于颗粒流的表面，而在第三阶段处理其它表面。在一些实施例中，第二阶段包括在衬底上沉积膜。

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