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71. 发明授权

US08358534B2 Spin torque transfer memory cell structures and methods 有权
标题翻译：旋转转矩记忆单元结构和方法
公开(公告)号：US08358534B2
公开(公告)日：2013-01-22
申请号：US12885012
申请日：2010-09-17
申请人： Stephen J. Kramer , Gurtej S. Sandhu
发明人： Stephen J. Kramer , Gurtej S. Sandhu
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material and a multiferroic material in contact with the ferromagnetic storage material, wherein the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are located between a first electrode and a second electrode.
摘要翻译：本文描述了旋转转矩传递（STT）存储单元结构和方法。一个或多个STT存储器单元结构包括位于铁磁存储材料和与反铁磁材料接触的被钉扎铁磁材料和与铁磁存储材料接触的多铁性材料之间的隧道势垒材料，其中反铁磁材料铁磁存储材料并且被钉扎的铁磁材料位于第一电极和第二电极之间。

72. 发明申请

US20120322269A1 Methods of Fabricating Substrates 有权
标题翻译：制造基板的方法
公开(公告)号：US20120322269A1
公开(公告)日：2012-12-20
申请号：US13596430
申请日：2012-08-28
申请人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
发明人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： A method of fabricating a substrate includes forming first and second spaced features over a substrate. The first spaced features have elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features. The first and second spaced features alternate with one another. Every other first feature is removed from the substrate and pairs of immediately adjacent second features are formed which alternate with individual of remaining of the first features. After such act of removing, the substrate is processed through a mask pattern comprising the pairs of immediately adjacent second features which alternate with individual of the remaining of the first features. Other embodiments are disclosed.
摘要翻译：一种制造衬底的方法包括在衬底上形成第一和第二间隔的特征。第一间隔的特征具有与第二间隔特征的垂直最外区域不同的高度最外的区域。第一和第二间隔的特征彼此交替。每个其他第一特征从衬底移除，并且形成直接相邻的第二特征对，其与第一特征的剩余部分的个体交替。在这样的去除动作之后，通过掩模图案来处理衬底，该掩模图案包括与第一特征剩余部分的个体交替的紧邻的第二特征对。公开了其他实施例。

73. 发明申请

US20120321876A1 ARTICLES HAVING SEMICONDUCTIVE CARBON NANOTUBES 审中-公开
标题翻译：具有半导体碳纳米管的文章
公开(公告)号：US20120321876A1
公开(公告)日：2012-12-20
申请号：US13595713
申请日：2012-08-27
申请人： Eugene P. Marsh , Gurtej S. Sandhu
发明人： Eugene P. Marsh , Gurtej S. Sandhu
IPC分类号： D01F9/12 , B32B9/00 , B82Y30/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/17 , C01B2202/02 , C01B2202/06 , C01B2202/22 , C01B2202/34 , Y10T428/249924 , Y10T428/249953 , Y10T428/2918
摘要： A process of forming a semiconductive carbon nanotube structure includes imposing energy on a mixture that contains metallic carbon nanotubes and semiconductive carbon nanotubes under conditions to cause the metallic carbon nanotubes to be digested or to decompose so that they may be separated away from the semiconductive carbon nanotubes.
摘要翻译：形成半导体碳纳米管结构的方法包括在使金属碳纳米管被消化或分解的条件下在包含金属碳纳米管和半导体碳纳米管的混合物上施加能量，使得它们可以与半导体碳纳米管分离。

74. 发明授权

US08282999B2 Spin-on film processing using acoustic radiation pressure 有权
标题翻译：旋转胶片处理使用声辐射压力
公开(公告)号：US08282999B2
公开(公告)日：2012-10-09
申请号：US12098124
申请日：2008-04-04
申请人： Nishant Sinha , Gurtej S. Sandhu , John Smythe
发明人： Nishant Sinha , Gurtej S. Sandhu , John Smythe
IPC分类号： B05D3/06 , B01J19/10 , B06B1/00 , H01L21/31
CPC分类号： H01L21/02282 , B01D19/0078 , B01F11/0071 , B05C11/02 , B05D1/005 , B05D3/12 , B08B3/12 , G03D3/04 , G03F7/162 , H01L21/31051 , H01L21/31058 , H01L21/312 , H01L21/67017 , H01L21/67092 , H01L21/6715 , H01L21/76819
摘要： An apparatus and process operate to impose sonic pressure upon a spin-on film liquid mass that exhibits a liquid topography and in a solvent vapor overpressure to alter the liquid topography. Other apparatus and processes are disclosed.
摘要翻译：一种装置和方法用于将声波压力施加在展现液体形貌和溶剂蒸汽超压中以改变液体形貌的旋涂膜液体质量上。公开了其他装置和方法。

75. 发明授权

US08278167B2 Method and structure for integrating capacitor-less memory cell with logic 有权
标题翻译：将无电容器存储单元与逻辑集成的方法和结构
公开(公告)号：US08278167B2
公开(公告)日：2012-10-02
申请号：US12338404
申请日：2008-12-18
申请人： Gurtej S. Sandhu
发明人： Gurtej S. Sandhu
IPC分类号： H01L21/8238
CPC分类号： H01L27/10844 , H01L21/84 , H01L27/0688 , H01L27/105 , H01L27/10802 , H01L27/10894 , H01L27/10897 , H01L27/1203
摘要： Methods for fabricating integrated circuits include fabricating a logic device on a substrate, forming an intermediate semiconductor substrate on a surface of the logic device, and fabricating a capacitor-less memory cell on the intermediate semiconductor substrate. Integrated circuits with capacitor-less memory cells formed on a surface of a logic device are also disclosed, as are multi-core microprocessors including such integrated circuits.
摘要翻译：制造集成电路的方法包括在衬底上制造逻辑器件，在逻辑器件的表面上形成中间半导体衬底，以及在中间半导体衬底上制造无电容器的存储单元。还公开了在逻辑器件的表面上形成有无电容器的存储器单元的集成电路，以及包括这种集成电路的多核微处理器。

76. 发明授权

US08273634B2 Methods of fabricating substrates 有权
标题翻译：制造基板的方法
公开(公告)号：US08273634B2
公开(公告)日：2012-09-25
申请号：US12328435
申请日：2008-12-04
申请人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
发明人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： A method of fabricating a substrate includes forming first and second spaced features over a substrate. The first spaced features have elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features. The first and second spaced features alternate with one another. Every other first feature is removed from the substrate and pairs of immediately adjacent second features are formed which alternate with individual of remaining of the first features. After such act of removing, the substrate is processed through a mask pattern comprising the pairs of immediately adjacent second features which alternate with individual of the remaining of the first features. Other embodiments are disclosed.
摘要翻译：一种制造衬底的方法包括在衬底上形成第一和第二间隔的特征。第一间隔的特征具有与第二间隔特征的垂直最外区域不同的高度最外的区域。第一和第二间隔的特征彼此交替。每个其他第一特征从衬底移除，并且形成直接相邻的第二特征对，其与第一特征的剩余部分的个体交替。在这样的去除动作之后，通过掩模图案来处理衬底，该掩模图案包括与第一特征剩余部分的个体交替的紧邻的第二特征对。公开了其他实施例。

77. 发明申请

US20120238077A1 Methods of Forming High Density Structures and Low Density Structures with a Single Photomask 有权
标题翻译：用单一光掩模形成高密度结构和低密度结构的方法
公开(公告)号：US20120238077A1
公开(公告)日：2012-09-20
申请号：US13485869
申请日：2012-05-31
申请人： Ramakanth Alapati , Ardavan Niroomand , Gurtej S. Sandhu
发明人： Ramakanth Alapati , Ardavan Niroomand , Gurtej S. Sandhu
IPC分类号： H01L21/302 , H01L21/20
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L27/11526 , H01L27/11543
摘要： Some embodiments include formation of polymer spacers along sacrificial material, removal of the sacrificial material, and utilization of the polymer spacers as masks during fabrication of integrated circuitry. The polymer spacer masks may, for example, be utilized to pattern flash gates of a flash memory array. In some embodiments, the polymer is simultaneously formed across large sacrificial structures and small sacrificial structures. The polymer is thicker across the large sacrificial structures than across the small sacrificial structures, and such difference in thickness is utilized to fabricate high density structures and low-density structures with a single photomask.
摘要翻译：一些实施方案包括沿着牺牲材料形成聚合物间隔物，去除牺牲材料，以及在制造集成电路期间利用聚合物间隔物作为掩模。聚合物间隔物掩模可以例如用于对闪存阵列的闪光栅图案进行图案化。在一些实施方案中，聚合物同时形成跨越大的牺牲结构和小的牺牲结构。聚合物在大的牺牲结构上比通过小的牺牲结构更厚，并且这种厚度的差异被用于利用单个光掩模制造高密度结构和低密度结构。

78. 发明授权

US08247302B2 Methods of fabricating substrates 有权
标题翻译：制造基板的方法
公开(公告)号：US08247302B2
公开(公告)日：2012-08-21
申请号：US12328464
申请日：2008-12-04
申请人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
发明人： Scott Sills , Gurtej S. Sandhu , Anton deVilliers
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/31138 , G03F7/0035 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced relative one another. Width of the spaced second features is laterally trimmed to a greater degree than any lateral trimming of width of the spaced first features while laterally trimming width of the spaced second features. After laterally trimming of the second features, spacers are formed on sidewalls of the spaced first features and on sidewalls of the spaced second features. The spacers are of some different composition from that of the spaced first features and from that of the spaced second features. After forming the spacers, the spaced first features and the spaced second features are removed from the substrate. The substrate is processed through a mask pattern comprising the spacers. Other embodiments are disclosed.
摘要翻译：一种制造衬底的方法包括在衬底上形成间隔开的第一特征和间隔开的第二特征。第一和第二特征彼此交替并彼此间隔开。间隔开的第二特征的宽度被横向修剪到比间隔开的第一特征的宽度的任何横向修剪更大的程度，同时横向修剪间隔开的第二特征的宽度。在第二特征的横向修剪之后，间隔物形成在间隔开的第一特征的侧壁上并且在间隔开的第二特征的侧壁上。间隔物与间隔开的第一特征和间隔开的第二特征的间隔物具有不同的组成。在形成间隔物之后，从衬底移除间隔开的第一特征和间隔开的第二特征。通过包括间隔物的掩模图案处理衬底。公开了其他实施例。

79. 发明授权

US08223539B2 GCIB-treated resistive device 有权
标题翻译： GCIB处理电阻器件
公开(公告)号：US08223539B2
公开(公告)日：2012-07-17
申请号：US12693936
申请日：2010-01-26
申请人： John Smythe , Gurtej S. Sandhu
发明人： John Smythe , Gurtej S. Sandhu
IPC分类号： G11C11/34
CPC分类号： H01L45/165 , G11C13/0007 , G11C2213/56 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1641 , H01L45/1683
摘要： The present disclosure includes GCIB-treated resistive devices, devices utilizing GCIB-treated resistive devices (e.g., as switches, memory cells), and methods for forming the GCIB-treated resistive devices. One method of forming a GCIB-treated resistive device includes forming a lower electrode, and forming an oxide material on the lower electrode. The oxide material is exposed to a gas cluster ion beam (GCIB) until a change in resistance of a first portion of the oxide material relative to the resistance of a second portion of the oxide material. An upper electrode is formed on the first portion.
摘要翻译：本公开包括GCIB处理的电阻性装置，利用GCIB处理的电阻性装置（例如，作为开关，存储器单元）的装置以及用于形成经GCIB处理的电阻装置的方法。形成GCIB处理的电阻性器件的一种方法包括形成下电极，并在下电极上形成氧化物材料。将氧化物材料暴露于气体簇离子束（GCIB），直到氧化物材料的第一部分的电阻相对于氧化物材料的第二部分的电阻发生变化。上电极形成在第一部分上。

80. 发明授权

US08222127B2 Methods of forming structures having nanotubes extending between opposing electrodes and structures including same 有权
标题翻译：形成具有在相对电极之间延伸的纳米管和包括其的结构的方法
公开(公告)号：US08222127B2
公开(公告)日：2012-07-17
申请号：US12176013
申请日：2008-07-18
申请人： Eugene P. Marsh , Gurtej S. Sandhu
发明人： Eugene P. Marsh , Gurtej S. Sandhu
IPC分类号： H01L21/20 , H01L29/66
CPC分类号： H01L51/0558 , B82Y10/00 , G11C13/025 , H01L21/02527 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L29/0665 , H01L29/0673 , H01L29/1606 , H01L29/7781 , H01L29/78 , H01L51/0003 , H01L51/0048 , H01L51/0562
摘要： A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed.
摘要翻译：公开了一种包括在电极之间形成电连接的纳米管的半导体结构。半导体结构可以包括由电绝缘材料的下表面限定的开放体积和电介质材料和相对电极中的每一个的至少一部分的侧壁。纳米管可以在相对的电极之间延伸，在它们之间形成物理和电连接。纳米管可以封装在半导体结构中的开放体积内。还公开了包括在源区和漏区之间形成电连接的纳米管的半导体结构。半导体结构可以包括电连接到源极和漏极的至少一个半导体碳纳米管，设置在至少一个半导体碳纳米管上方的电介质材料和覆盖该介电材料的一部分的栅极电介质。还公开了形成半导体结构的方法。

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