专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06306266B1 Method of making a top spin valve sensor with an in-situ formed seed layer structure for improving sensor performance 失效
标题翻译：制造具有原位形成的种子层结构的顶部自旋阀传感器以提高传感器性能的方法
公开(公告)号：US06306266B1
公开(公告)日：2001-10-23
申请号：US09574682
申请日：2000-05-17
申请人： Serhat Metin , Mustafa Pinarbasi , Patrick Rush Webb
发明人： Serhat Metin , Mustafa Pinarbasi , Patrick Rush Webb
IPC分类号： C23C1434
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： A method constructs first and second seed layers of a seed layer structure in-situ for a top spin valve sensor for increasing magnetoresistive coefficient dr/R of the sensor, reducing a ferromagnetic coupling field HFC between pinned and free layers of the sensor and reducing coercivity HC of the free layer. The first layer, which is aluminum oxide (Al2O3), is ion beam sputter deposited on a first shield layer in a sputtering chamber under a specified pressure. The second seed layer, which is nickel oxide based, is deposited on the first seed layer by ion beam sputter deposition without breaking the vacuum of the chamber. The free layer is then directly deposited on the second seed layer followed by formation of the remainder of the layers of the spin valve sensor. In one embodiment of the invention a read gap layer and the first seed layer are located between a first shield layer and the second seed layer while in the second embodiment of the invention the first seed layer is the only layer between the first shield layer and the second seed layer.
摘要翻译：一种方法为顶部自旋阀传感器原位构建种子层结构的第一种子层和第二种子层，用于增加传感器的磁阻系数dr / R，从而减小传感器的固定层和自由层之间的铁磁耦合场HFC，并降低矫顽力 HC的自由层。作为氧化铝（Al 2 O 3）的第一层是在特定压力下溅射沉积在溅射室中的第一屏蔽层上的离子束。基于氧化镍的第二种子层通过离子束溅射沉积而沉积在第一籽晶层上，而不破坏室的真空。然后将自由层直接沉积在第二种子层上，随后形成自旋阀传感器的其余层。在本发明的一个实施例中，读间隙层和第一种子层位于第一屏蔽层和第二种子层之间，而在本发明的第二实施例中，第一种子层是第一屏蔽层和第二屏蔽层之间的唯一层第二种子层。

72. 发明授权

US06282068B1 Antiparallel (AP) pinned read head with improved GMR 有权
标题翻译：反平行（AP）固定读头与改进的GMR
公开(公告)号：US06282068B1
公开(公告)日：2001-08-28
申请号：US09280498
申请日：1999-03-30
申请人： Mustafa Pinarbasi
发明人： Mustafa Pinarbasi
IPC分类号： G11B539
CPC分类号： B82Y25/00 , G11B20/10 , H01F10/3268 , H01F10/3295
摘要： First and second antiparallel (AP) pinned layers of an AP pinned layer structure are cobalt iron (CoFe) which increases the GMR (magnetoresistive coefficient dr/R) of a spin valve sensor by 10% with improved magnetic stability over a spin valve sensor where the first and second AP pinned layers are cobalt (Co).
摘要翻译： AP钉扎层结构的第一和第二反平行（AP）钉扎层是钴铁（CoFe），其将自旋阀传感器的GMR（磁阻系数dr / R）增加10％，并且在自旋阀传感器上具有改善的磁稳定性，第一和第二AP钉扎层是钴（Co）。

73. 发明授权

US06249406B1 Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction 失效
标题翻译：具有高磁化强度，高电阻率，低固有各向异性和近零磁致伸缩的软相邻层的磁阻传感器
公开(公告)号：US06249406B1
公开(公告)日：2001-06-19
申请号：US08717518
申请日：1996-09-23
申请人： Hardayal Singh Gill , Mustafa Pinarbasi
发明人： Hardayal Singh Gill , Mustafa Pinarbasi
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996
摘要： A high magnetization, high resistivity, low corrosion and near zero magnetostriction soft adjacent layer (SAL) is provided for a magnetoresistive (MR) sensor of a read head. The MR sensor may either be an anisotropic MR (AMR) sensor or a spin valve sensor. In both sensors the SAL is CoHfNb or CoHfNbFe. The Hf is added to reduce corrosion and the Hf and Nb are balanced to provide near zero magnetostriction. The addition of Fe is an enhancer for reducing negative magnetostriction without diluting the magnetism of the alloy. Since CoHfNb has significantly higher magnetization than NiFeCr the SAL layer of CoHfNb can be thinner than the SAL of NiFeCr which results in a significantly higher resistance SAL. The higher resistance SAL equates to less shunting of the sense current through the SAL and better signal performance of the MR read head.
摘要翻译：为读头的磁阻（MR）传感器提供高磁化，高电阻率，低腐蚀和近零磁致伸缩软相邻层（SAL）。 MR传感器可以是各向异性MR（AMR）传感器或自旋阀传感器。在两个传感器中，SAL是CoHfNb或CoHfNbFe。加入Hf以减少腐蚀，并且Hf和Nb平衡以提供接近零的磁致伸缩。 Fe的添加是用于减少负磁致伸缩而不稀释合金磁性的增强剂。由于CoHfNb具有比NiFeCr显着更高的磁化强度，所以CoHfNb的SAL层可以比NiFeCr的SAL薄，导致显着更高的电阻SAL。较高的电阻SAL等于通过SAL的感测电流的较少分流和MR读取头的更好的信号性能。

74. 发明授权

US06208492B1 Seed layer structure for spin valve sensor 失效
标题翻译：自旋阀传感器种子层结构
公开(公告)号：US06208492B1
公开(公告)日：2001-03-27
申请号：US09311217
申请日：1999-05-13
申请人： Mustafa Pinarbasi
发明人： Mustafa Pinarbasi
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01F10/3295
摘要： A bilayer seed layer structure is employed between a first read gap layer and a spin valve sensor for increasing the magnetoresistive coefficient (dr/R). In a bottom spin valve sensor the bilayer seed layer structure is located between the first read gap layer and a pinning layer and in a top spin valve sensor the bilayer seed layer structure is located between the first read gap layer and the free layer. The pinning layer is preferably iridium manganese (IrMn). The bilayer seed layer structure includes a first seed layer which is a metallic oxide and a second seed layer that is a nonmagnetic metal. A preferred embodiment is a first seed layer of nickel manganese oxide (NiMnO) and a second seed layer of copper (Cu).
摘要翻译：在第一读取间隙层和自旋阀传感器之间采用双层种子层结构以增加磁阻系数（dr / R）。在底部自旋阀传感器中，双层种子层结构位于第一读取间隙层和钉扎层之间，并且在顶部自旋阀传感器中，双层种子层结构位于第一读取间隙层和自由层之间。钉扎层优选为铱锰（IrMn）。双层种子层结构包括作为金属氧化物的第一籽晶层和作为非磁性金属的第二种子层。优选的实施方案是镍锰氧化物（NiMnO）的第一籽晶层和铜（Cu）的第二种子层。

75. 发明授权

US6063244A Dual chamber ion beam sputter deposition system 失效
标题翻译：双室离子束溅射沉积系统
公开(公告)号：US6063244A
公开(公告)日：2000-05-16
申请号：US083372
申请日：1998-05-21
申请人： Mustafa Pinarbasi
发明人： Mustafa Pinarbasi
IPC分类号： H01F41/18 , C23C14/46 , C23C14/56 , G11B5/31 , G11B5/39 , H01F41/30 , H01L43/12 , C23C19/34
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C23C14/46 , C23C14/568 , H01F41/308 , G11B2005/3996 , G11B5/3163
摘要： A dual chamber deposition system comprising two ion beam sputtering (IBS) deposition chambers connected by a wafer handler chamber for depositions of multilayer thin film structures with improved process throughput. Reactive ion beam sputtering depositions and metal layer depositions on a substrate may be carried out in separate IBS deposition chambers while maintaining vacuum conditions throughout the process. A process for ion beam sputter deposition of spin valve (SV) magnetoresistive sensor layers having an AFM layer formed of NiO where reactive sputtering deposition of the NiO is carried out in a separate IBS deposition chamber from the subsequent metal layer depositions improves system throughput while maintaining SV sensor performance.
摘要翻译：双室沉积系统包括两个离子束溅射（IBS）沉积室，其通过晶片处理器室连接，用于沉积具有改进的工艺生产能力的多层薄膜结构。反应性离子束溅射沉积和基底上的金属层沉积可以在单独的IBS沉积室中进行，同时在整个过程中保持真空条件。具有由NiO形成的AFM层的自旋阀（SV）磁阻传感器层的离子束溅射沉积的方法，其中NiO的反应性溅射沉积在独立的IBS沉积室中与随后的金属层沉积进行，提高系统吞吐量，同时保持 SV传感器性能。

76. 发明授权

US08772076B2 Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells 失效
标题翻译：用于组ibiiiavia光伏电池的背面接触扩散阻挡层
公开(公告)号：US08772076B2
公开(公告)日：2014-07-08
申请号：US12875669
申请日：2010-09-03
申请人： Mustafa Pinarbasi , James Freitag , Jorge Vasquez
发明人： Mustafa Pinarbasi , James Freitag , Jorge Vasquez
IPC分类号： H01L31/18
CPC分类号： H01L31/03928 , H01L31/0322 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： The present invention provides for new ohmic contact materials and diffusion barriers for Group IBIIIAVIA based solar cell structures, which eliminate two way diffusion while preserving the efficient ohmic contacts between the substrate and the absorber layers.
摘要翻译：本发明提供了用于基于IBIIIAVIA的太阳能电池结构的新的欧姆接触材料和扩散阻挡层，其消除双向扩散同时保持衬底和吸收层之间的有效欧姆接触。

77. 发明授权

US08409418B2 Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers 失效
标题翻译： IBIIIAVIA薄膜太阳能电池吸收体的电镀化学成分和制备方法
公开(公告)号：US08409418B2
公开(公告)日：2013-04-02
申请号：US12642709
申请日：2009-12-18
申请人： Serdar Aksu , Jiaxiong Wang , Mustafa Pinarbasi
发明人： Serdar Aksu , Jiaxiong Wang , Mustafa Pinarbasi
IPC分类号： C25D5/10 , C25D5/48 , C25D5/50
CPC分类号： C25D3/58 , C25D3/56 , C25D5/10
摘要： The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.
摘要翻译：本发明提供一种形成IBIIIAIVA族太阳能电池吸收层的方法和前体结构。该方法包括通过电沉积三种不同的膜在基底上形成前体层，然后使前体层与硒反应，在基底上形成IBIIIAVIA族化合物层，从而在基底上形成IBIIIAVIA族化合物层。由前体层描述的三个膜在一个实施方案中包括包含铜，铟和镓的第一合金膜，在第一合金膜上形成的包含铜和硒的第二合金膜; 以及形成在第二合金膜上的硒膜。

78. 发明授权

US08404512B1 Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers 失效
标题翻译：制备IBIIIAVIA薄膜太阳能吸收器的结晶方法
公开(公告)号：US08404512B1
公开(公告)日：2013-03-26
申请号：US13041285
申请日：2011-03-04
申请人： Serdar Aksu , Mustafa Pinarbasi
发明人： Serdar Aksu , Mustafa Pinarbasi
IPC分类号： H01L21/00
CPC分类号： H01L31/0322 , H01L31/0323 , H01L31/03928 , Y02E10/541
摘要： The present invention provides methods for forming a doped Group IBIIIAVIA absorber layer for a solar cell. The method includes forming precursor layers that include a dopant rich layer and then annealing the precursor layers. The annealing process results in dopants diffusing through the layers to an exterior surface. The annealing process is periodically halted to remove dopants from the exposed surface.
摘要翻译：本发明提供了形成用于太阳能电池的掺杂IBIIIAVIA族吸收层的方法。该方法包括形成包括掺杂剂富含层的前体层，然后退火前体层。退火过程导致掺杂剂通过层扩散到外表面。定期停止退火处理以从暴露表面去除掺杂剂。

79. 发明申请

US20120318318A1 CIGS BASED THIN FILM SOLAR CELLS HAVING SHARED BYPASS DIODES 审中-公开
标题翻译：基于CIGS的薄膜太阳能电池，具有共享二极管
公开(公告)号：US20120318318A1
公开(公告)日：2012-12-20
申请号：US13163485
申请日：2011-06-17
申请人： Burak Metin , Deepak Nayak , Mustafa Pinarbasi
发明人： Burak Metin , Deepak Nayak , Mustafa Pinarbasi
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/0504 , H02S40/34 , Y02E10/50
摘要： A photovoltaic module comprises a first bypass diode and a first group of solar cells connected to the first bypass diode. The first group of solar cells comprises a first solar cell, a second solar cell connected in series to the first solar cell, and a third solar cell connected in parallel to the first solar cell.
摘要翻译：光伏模块包括第一旁路二极管和连接到第一旁路二极管的第一组太阳能电池。第一组太阳能电池包括第一太阳能电池，与第一太阳能电池串联连接的第二太阳能电池以及与第一太阳能电池并联连接的第三太阳能电池。

80. 发明申请

US20120279855A1 APPARATUS FOR ACHIEVING LOW RESISTANCE CONTACT TO A METAL BASED THIN FILM SOLAR CELL 审中-公开
标题翻译：实现低电阻接触金属薄膜太阳能电池的设备
公开(公告)号：US20120279855A1
公开(公告)日：2012-11-08
申请号：US13533765
申请日：2012-06-26
申请人： Mustafa Pinarbasi , Bulent M. Basol
发明人： Mustafa Pinarbasi , Bulent M. Basol
IPC分类号： C23C14/34
CPC分类号： H01L31/0322 , H01L31/03926 , H01L31/03928 , H01L31/0504 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A system and method of forming a thin film solar cell with a metallic foil substrate are provided. After forming a semiconductor absorber film over the front surface of the metallic foil substrate a back surface of the metallic foil substrate is treated using a material removal process to form a treated back surface in a process chamber. In one embodiment, the material removal process is performed while depositing a transparent conductive layer over the semiconductor absorber film in the process chamber.
摘要翻译：提供了一种用金属箔基片形成薄膜太阳能电池的系统和方法。在金属箔基板的前表面上形成半导体吸收膜之后，使用材料去除处理来处理金属箔基板的后表面，以在处理室中形成经处理的后表面。在一个实施例中，在处理室中的半导体吸收膜上沉积透明导电层的同时进行材料去除处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式