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71. 发明申请

US20140120723A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN 有权
标题翻译：用于沉积氟/无碳一致性钨酸盐的方法
公开(公告)号：US20140120723A1
公开(公告)日：2014-05-01
申请号：US14062804
申请日：2013-10-24
申请人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
发明人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC分类号： H01L21/285
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
摘要翻译：提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

72. 发明申请

US20140106565A1 Methods For Atomic Layer Etching 有权
标题翻译：原子层蚀刻方法
公开(公告)号：US20140106565A1
公开(公告)日：2014-04-17
申请号：US14106166
申请日：2013-12-13
申请人： Mei Chang , Joseph Yudovsky
发明人： Mei Chang , Joseph Yudovsky
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/3244 , H01L21/3065 , H01L21/67069 , H01L21/67207 , H01L21/67248 , H01L21/6776
摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
摘要翻译：提供了使用原子层沉积装置蚀刻衬底的方法。讨论了包括具有热元件的气体分布板的原子层沉积设备。热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

73. 发明申请

US20130143415A1 Multi-Component Film Deposition 审中-公开
标题翻译：多组分膜沉积
公开(公告)号：US20130143415A1
公开(公告)日：2013-06-06
申请号：US13308849
申请日：2011-12-01
申请人： Joseph Yudovsky , Mei Chang , Steven D. Marcus , Garry K. Kwong
发明人： Joseph Yudovsky , Mei Chang , Steven D. Marcus , Garry K. Kwong
IPC分类号： H01L21/31 , B67D7/06 , C23C16/455
CPC分类号： C23C16/45551
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.
摘要翻译：提供的是原子层沉积装置和方法，其包括气体分配板，其包括多个细长气体端口，该多个细长气体端口包括与第一反应气体流体连通的至少一个第一反应气体端口和与气体流体连通的至少一个第二反应气体端口多数。气体歧管与不同于第一反应气体和吹扫气体的至少第二反应气体流体连通。还提供了原子层沉积装置和方法，其包括在气体分配板之前的区域中的一个或多个区域和气体分配板之后的区域中的线性能量源。

74. 发明申请

US20130137267A1 Methods for Atomic Layer Etching 有权
标题翻译：原子层蚀刻方法
公开(公告)号：US20130137267A1
公开(公告)日：2013-05-30
申请号：US13307524
申请日：2011-11-30
申请人： Mei Chang , Joseph Yudovsky
发明人： Mei Chang , Joseph Yudovsky
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/3244 , H01L21/3065 , H01L21/67069 , H01L21/67207 , H01L21/67248 , H01L21/6776
摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
摘要翻译：提供了使用原子层沉积装置蚀刻衬底的方法。讨论了包括具有热元件的气体分布板的原子层沉积设备。热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

75. 发明申请

US20090280640A1 DEPOSITION AND DENSIFICATION PROCESS FOR TITANIUM NITRIDE BARRIER LAYERS 失效
标题翻译：硝酸钡阻挡层的沉积和渗透过程
公开(公告)号：US20090280640A1
公开(公告)日：2009-11-12
申请号：US12426815
申请日：2009-04-20
申请人： AMIT KHANDELWAL , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
发明人： AMIT KHANDELWAL , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28556 , H01L21/321 , H01L21/76843 , H01L21/76862
摘要： In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.
摘要翻译：在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层：将衬底暴露于等离子体工艺。在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。在另一示例中，在第二氮化钛层上沉积第三氮化钛层。随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。在一个示例中，每个氮化钛层可以具有约15埃的厚度，并且氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

76. 发明申请

US20090151633A1 METHOD AND APPARATUS FOR GENERATING A PRECURSOR FOR A SEMICONDUCTOR PROCESSING SYSTEM 有权
标题翻译：用于生成半导体加工系统的前驱体的方法和装置
公开(公告)号：US20090151633A1
公开(公告)日：2009-06-18
申请号：US12371138
申请日：2009-02-13
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C23C16/54
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.
摘要翻译：本文描述的实施例涉及用于产生半导体处理系统的前体的装置。在一个实施例中，描述了在气相沉积工艺期间产生前体气体的装置。该装置包括容纳盖和底部之间的内部容积的容器，设置在盖上的气体入口和气体出口，与底部相连并从内部容积的下部区域延伸到上部区域的多个筒仓，以及包含在罐的下部区域内的氯浓度为约5ppm以下的钽前体。

77. 发明授权

US07494908B2 Apparatus for integration of barrier layer and seed layer 有权
标题翻译：用于整合势垒层和种子层的装置
公开(公告)号：US07494908B2
公开(公告)日：2009-02-24
申请号：US11749064
申请日：2007-05-15
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： H01L21/3205
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.
摘要翻译：提供了一种用于处理衬底的系统，其包括用于沉积包含钽的阻挡层的至少一个原子层沉积（ALD）室和用于在阻挡层上沉积金属籽晶层的至少一个物理气相沉积（PVD）金属种子室。所述至少一个ALD室可以与提供含钽化合物和第二前体源的第一前体源流体连通。在一个实例中，含钽化合物是有机金属钽前体，例如PDMAT。在另一个实例中，第二前体源含有氮前体，例如氨。 PDMAT的氯浓度可以为约100ppm以下，优选为约30ppm以下，更优选为约5ppm以下。在一些实例中，PVD金属种子室用于沉积含铜金属种子层。

78. 发明申请

US20080274299A1 APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING 有权
标题翻译：混合化学处理装置和方法
公开(公告)号：US20080274299A1
公开(公告)日：2008-11-06
申请号：US12172092
申请日：2008-07-11
申请人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
摘要翻译：在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳衬底支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS）区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件导管。第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

79. 发明授权

US07270709B2 Method and apparatus of generating PDMAT precursor 有权
标题翻译：生成PDMAT前体的方法和装置
公开(公告)号：US07270709B2
公开(公告)日：2007-09-18
申请号：US11119681
申请日：2005-05-02
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B21/02
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
摘要翻译：用于填充衬底中的特征的前体和方法。该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm杂质的五（二甲基氨基）钽形成。该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。前体通常包括具有小于约5ppm杂质的五（二甲基氨基）钽。在与加热元件耦合的罐中产生前体，其配置成减少杂质的形成。

80. 发明申请

US20070067609A1 Method and apparatus for generating a precursor for a semiconductor processing system 有权
标题翻译：用于产生半导体处理系统的前体的方法和装置
公开(公告)号：US20070067609A1
公开(公告)日：2007-03-22
申请号：US10590448
申请日：2004-05-27
申请人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： G06F15/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/4481 , H01L21/28562 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis(dimethylamido)tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

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