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    • 72. 发明授权
    • Beam irradiation device and laser radar system
    • 光束照射装置和激光雷达系统
    • US08368874B2
    • 2013-02-05
    • US12695497
    • 2010-01-28
    • Yoshiaki MaenoAtsushi YamaguchiMitsutaka Yamaguchi
    • Yoshiaki MaenoAtsushi YamaguchiMitsutaka Yamaguchi
    • G01C3/00
    • G01J1/4257G01S7/4811G01S7/4817G01S17/026G01S17/10G01S17/42G01S17/936
    • A beam irradiation device includes: a laser light source for emitting laser light; an actuator which scans a targeted area with the laser light; a servo optical system which changes a propagating direction of servo light in response to driving of the actuator; a photodetector which receives the servo light to output a signal depending on a light receiving position of the servo light; an actuator controlling section which controls the actuator based on the signal to be outputted from the photodetector; and a laser controlling section which controls the laser light source based on the signal to be outputted from the photodetector. The laser controlling section controls the laser light source to emit the laser light in a pulse manner at a timing when the light receiving position of the servo light coincides with a predetermined targeted position.
    • 光束照射装置包括:用于发射激光的激光源; 用激光扫描目标区域的致动器; 伺服光学系统,其响应于致动器的驱动而改变伺服光的传播方向; 接收所述伺服光以根据所述伺服光的光接收位置输出信号的光电检测器; 致动器控制部,其基于从所述光检测器输出的信号来控制所述致动器; 以及激光控制部,其基于从光电检测器输出的信号来控制激光光源。 在伺服光的光接收位置与预定目标位置一致的时刻,激光控制部分控制激光光源以脉冲方式发射激光。
    • 74. 发明授权
    • Storage unit and information processing apparatus and method of cooling
    • 存储单元及信息处理装置及冷却方法
    • US08279595B2
    • 2012-10-02
    • US12405292
    • 2009-03-17
    • Junichi IshimineAtsushi Yamaguchi
    • Junichi IshimineAtsushi Yamaguchi
    • H05K5/00H05K7/20A47B77/08
    • G06F1/20G06F1/206H05K7/20736
    • A storage unit includes: a storage section containing an information processing apparatus; an intake section allowing intake of a cooling medium into the information processing apparatus for cooling the information processing apparatus; a discharge section receiving the cooling medium discharged from the information processing apparatus; a cooling medium flow generating section configured to control intake and discharge of the cooling medium; a partition section isolating the intake section and the discharge section from each other; an aperture formed in the partition section; a detector section configured to detect an inflow of the cooling medium, discharged from the discharge section, through the aperture; and a controller section configured to control the cooling medium flow generating section in accordance with a result of the detection of the detector section.
    • 存储单元包括:存储部分,其包含信息处理设备; 吸入部,其允许将冷却介质吸入信息处理装置中以冷却信息处理装置; 接收从信息处理装置排出的冷却介质的排出部; 冷却介质流产生部,被配置为控制冷却介质的进入和排出; 分隔部,其使进气部和排出部彼此隔离; 形成在所述分隔部中的孔; 检测器部,被配置为检测从所述排出部排出的冷却介质的流入; 以及控制部,其构成为根据检测部的检测结果来控制冷却介质流生成部。
    • 78. 发明授权
    • Semiconductor light emitting device and method for manufacturing the same
    • 半导体发光器件及其制造方法
    • US08124985B2
    • 2012-02-28
    • US11815759
    • 2006-02-07
    • Mitsuhiko SakaiAtsushi YamaguchiKen NakaharaMasayuki SonobeTsuyoshi Tsutsui
    • Mitsuhiko SakaiAtsushi YamaguchiKen NakaharaMasayuki SonobeTsuyoshi Tsutsui
    • H01L27/15H01L29/26H01L31/12H01L33/00
    • H01L33/20H01L33/0079H01L33/60
    • There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
    • 提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。 在由例如蓝宝石等制成的基板(1)的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部(6)。 第一电极(例如,p侧电极(8))在半导体层叠部分(6)的表面侧电连接到第一导电类型层(例如,p型层(5)), 并且第二电极(例如,n侧电极(9))被设置为电连接到第二导电类型层(例如,n型层(3))。 通过蚀刻在半导体层叠部(6)的芯片的周围区域去除半导体层叠部(6)的一部分,使得柱部(6a)不经蚀刻而离开半导体层叠部而并排放置,并且 n型层(3)围绕柱部(6a)露出。