专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20120159206A1 INFORMATION PROCESSOR 审中-公开
标题翻译：信息处理器
公开(公告)号：US20120159206A1
公开(公告)日：2012-06-21
申请号：US13314656
申请日：2011-12-08
申请人： Takeshi Endo , Daisuke Kawamoto
发明人： Takeshi Endo , Daisuke Kawamoto
IPC分类号： G06F1/26
CPC分类号： G06F1/30 , G06F1/1635 , H01M2/1022 , H01M2/20 , H01M10/46
摘要： Disclosed herein is an information processor, including: a detecting portion detecting connection between a battery pack and an information processor main body, and outputting connection information to the battery pack; a power source circuit to which an electric power is supplied from the battery pack acquiring the connection information; a manipulation portion adapted to be manipulated by a user; and a stopping portion outputting un-connection information to the battery pack when the manipulation portion is manipulated, and stopping output of the connection information even when the connection is detected by the detecting portion.
摘要翻译：这里公开了一种信息处理器，包括：检测部分，检测电池组和信息处理器主体之间的连接，并将连接信息输出到电池组; 电源电路，从所述电池组提供从其获取所述连接信息的电力; 适于由用户操纵的操纵部分; 以及当所述操作部被操纵时，将未连接信息输出到所述电池组的停止部，以及即使当所述检测部检测到所述连接时，也停止所述连接信息的输出。

72. 发明授权

US08158719B2 Benzoxazine-formulations with reduced outgassing behaviour 失效
标题翻译：苯并恶嗪制剂具有降低的除气行为
公开(公告)号：US08158719B2
公开(公告)日：2012-04-17
申请号：US12621850
申请日：2009-11-19
申请人： Atsushi Sudo , Ryoichi Kudoh , Kazuya Uenishi , Takeshi Endo , Andreas Taden , Rainer Schönfeld , Thomas Huver
发明人： Atsushi Sudo , Ryoichi Kudoh , Kazuya Uenishi , Takeshi Endo , Andreas Taden , Rainer Schönfeld , Thomas Huver
IPC分类号： C08G73/10
CPC分类号： C08G73/02 , C07D265/16 , H01L23/293 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Polymerizable combinations, comprising at least one first component selected from the group of benzoxazine monomers and at least one second component selected from the group of aromatic esters are described. Further on the use of aromatic esters as additives to benzoxazine monomers as well as methods of coating a device by heating the above mentioned combination, and a device, coated by that way is explained.
摘要翻译：描述了包含至少一种选自苯并恶嗪单体和至少一种选自芳族酯的第二组分的第一组分的可聚合组合。此外，关于使用芳族酯作为苯并恶嗪单体的添加剂以及通过加热上述组合涂覆装置的方法以及通过这种方式涂覆的装置进行了说明。

73. 发明授权

US08133787B2 SiC semiconductor device and method for manufacturing the same 有权
标题翻译： SiC半导体器件及其制造方法
公开(公告)号：US08133787B2
公开(公告)日：2012-03-13
申请号：US12071718
申请日：2008-02-26
申请人： Takeshi Endo
发明人： Takeshi Endo
IPC分类号： H01L21/8234
CPC分类号： H01L29/66068 , H01L21/049 , H01L29/045 , H01L29/0847 , H01L29/1083 , H01L29/1087 , H01L29/1608 , H01L29/51 , H01L29/78 , H01L29/7828 , H01L29/7838 , Y10S438/931
摘要： A SiC semiconductor device having a MOS structure includes: a SiC substrate; a channel region providing a current path; first and second impurity regions on upstream and downstream sides of the current path, respectively; and a gate on the channel region through the gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 4.7×1020 cm−3. The interface provides a channel surface having a (000-1)-orientation surface.
摘要翻译：具有MOS结构的SiC半导体器件包括：SiC衬底; 提供电流路径的信道区域; 分别在电流路径的上游侧和下游侧的第一和第二杂质区域; 以及通过栅极绝缘膜的沟道区上的栅极。用于在第一和第二杂质区域之间流动电流的沟道区域由施加到栅极的电压来控制。沟道区域和栅极绝缘膜之间的界面的氢浓度等于或大于4.7×1020cm-3。界面提供具有（000-1）取向表面的通道表面。

74. 发明授权

US08116006B2 Image display apparatus and head mount display 有权
标题翻译：图像显示装置和头戴式显示器
公开(公告)号：US08116006B2
公开(公告)日：2012-02-14
申请号：US12008480
申请日：2008-01-11
申请人： Yoshie Shimizu , Yasushi Tanijiri , Takeshi Endo , Tetsuya Noda
发明人： Yoshie Shimizu , Yasushi Tanijiri , Takeshi Endo , Tetsuya Noda
IPC分类号： G02B27/14 , G09G5/00
CPC分类号： G02B27/0172 , G02B5/30 , G02B5/32 , G02B27/0103 , G02B2027/0112 , G02B2027/0174 , G02B2027/0178 , G03H2001/2231
摘要： The light directed from a light source to a concave mirror and the light directed from a display device to an eyepiece optical system are intersected by each other in a layout. This allows the light source, the concave mirror, and the display device to be arranged in compactness adjacent to the eyepiece optical system without increasing the optical power of an illumination optical system. As the result, the apparatus can easily be minimized in the thickness or the overall size. A hologram optical element is provided where the relationship between the wavelength range Δλ1 at half of the diffraction efficiency of each of the three primary colors of the light in the hologram optical element and the wavelength range Δλ2 at half of the intensity of each of the three primary colors of the light emitted from the light source is defined by Δλ1
摘要翻译：从光源引导到凹面镜的光和从显示装置指向目镜光学系统的光在布局中彼此相交。这允许光源，凹面镜和显示装置在与目镜光学系统相邻的紧凑状态下布置，而不增加照明光学系统的光功率。结果，该装置可以容易地在厚度或整体尺寸上最小化。提供了一种全息光学元件，其中全息光学元件中的光的三原色中的每一种的衍射效率的一半的波长范围＆Dgr;λ1与波长范围＆Dgr;λ2之间的关系为强度的一半从光源发射的光的三原色中的每一个由＆Dgr;λ1<＆Dgr;λ2定义。因此，从光源发射的光的R，G和B颜色中的每一个的期望波长的分量可以通过全息光学元件的作用被衍射，然后被引导到观察者的瞳孔。这允许在颜色再现区域中增加图像并且提高质量，而与时分模式下的显示装置无关。

75. 发明授权

US07999982B2 Hologram optical element, fabrication method thereof, and image display apparatus 有权
标题翻译：全息图光学元件及其制造方法以及图像显示装置
公开(公告)号：US07999982B2
公开(公告)日：2011-08-16
申请号：US12126105
申请日：2008-05-23
申请人： Takeshi Endo , Yoshie Shimizu
发明人： Takeshi Endo , Yoshie Shimizu
IPC分类号： G03H1/00 , G02B5/32 , G09G5/00
CPC分类号： G03H1/04 , G02B5/32 , G02B27/0103 , G02B27/1073 , G02B27/1086 , G02B2027/0109 , G02B2027/0123 , G03H2001/0439 , G03H2001/2231 , G03H2222/55
摘要： A volume-phase reflection hologram optical element is fabricated by exposing a hologram photosensitive material to two coherent light beams. One exposure light beam has an axis-asymmetric wavefront, and the other exposure light beam has focus points different in the optical axis direction (Z-direction) between on a plane (ZX-plane) including one of two directions (X- and Y-directions) mutually perpendicular on a sectional plane perpendicular to that light beam and on a plane (YZ-plane) including the other of those two directions. Thus, an image display apparatus is realized in which at the time of reproduction, the component of a predetermined wavelength of the image light diffraction-reflected by the hologram optical element is focused at positions different in the optical axis direction between on the ZX-plane and on the YZ-plane, offering different image viewing characteristics between in the X- and Y-directions.
摘要翻译：通过将全息图感光材料曝光于两个相干光束来制造体积相位反射全息光学元件。一个曝光光束具有轴非对称波前，另一个曝光光束在包括两个方向之一的平面（ZX平面）上的光轴方向（Z方向）上具有不同的焦点（X和Y 二维）在垂直于该光束的截面上和在包括这两个方向中的另一个的平面（YZ-平面）上相互垂直。因此，实现了一种图像显示装置，其中在再现时，由全息光学元件衍射反射的图像光的预定波长的分量被聚焦在Z轴平面上的光轴方向上不同的位置并且在YZ平面上，在X和Y方向之间提供不同的图像观看特性。

76. 发明授权

US07893274B2 Process for producing amino acid N-carboxyanhydride 有权
标题翻译：制备氨基酸N-羧酸酐的方法
公开(公告)号：US07893274B2
公开(公告)日：2011-02-22
申请号：US11457035
申请日：2006-07-12
申请人： Yukihiro Fujita , Takeshi Endo , Haruo Nishida , Atsushi Sudo
发明人： Yukihiro Fujita , Takeshi Endo , Haruo Nishida , Atsushi Sudo
IPC分类号： C07D263/00
CPC分类号： C07C269/04 , C07C271/44 , C07C271/54
摘要： The present invention provides a process for producing an amino acid N-carboxyanhydride, which comprises reacting an amino acid or a derivative thereof with a compound represented by the following formula (1): wherein R1 and R2 represent the same or different electron-withdrawing substituents and each independently are an optionally substituted acyl group, an optionally substituted alkyloxycarbonyl group, an optionally substituted perfluoroalkyl group, an optionally substituted perchloroalkyl group, a cyano group, a halogen atom, or a nitro group; and a and b are the same or different and each are an integer of 1-5.
摘要翻译：本发明提供了一种制备氨基酸N-羧酸酐的方法，其包括使氨基酸或其衍生物与下式（1）表示的化合物反应：其中R 1和R 2表示相同或不同的吸电子取代基并且各自独立地为任选取代的酰基，任选取代的烷氧基羰基，任选取代的全氟烷基，任选取代的全氯烷基，氰基，卤素原子或硝基; a和b相同或不同，为1-5的整数。

77. 发明授权

US07825449B2 Silicon carbide semiconductor device and related manufacturing method 有权
标题翻译：碳化硅半导体器件及相关制造方法
公开(公告)号：US07825449B2
公开(公告)日：2010-11-02
申请号：US12289624
申请日：2008-10-30
申请人： Naohiro Suzuki , Yuuichi Takeuchi , Takeshi Endo , Eiichi Okuno , Toshimasa Yamamoto
发明人： Naohiro Suzuki , Yuuichi Takeuchi , Takeshi Endo , Eiichi Okuno , Toshimasa Yamamoto
IPC分类号： H01L29/94 , H01L21/04 , H01L29/68
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0847 , H01L29/1095 , H01L29/1608 , H01L29/47 , H01L29/66068 , H01L29/7391 , H01L29/7397 , H01L29/7828
摘要： An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p+-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p+-type deep layer and an n−-type drift layer to extend into the n−-type drift layer in a remarkable length, making it difficult for a high voltage, resulting from an adverse affect arising from a drain voltage, to enter a gate oxide film. This results in a capability of minimizing an electric field concentration in the gate oxide film, i.e., an electric field concentration occurring at the gate oxide film at a bottom wall of the trench.
摘要翻译：公开了一种SiC半导体器件和相关制造方法，其具有设置有等于或大于沟槽深度形成的p +型深层的结构，以在p +型之间的PN结处引起耗尽层深层和n型漂移层以非常长的长度延伸到n型漂移层中，使得由于漏极电压引起的不利影响导致的高电压难以进入栅极氧化膜。这导致使栅极氧化膜中的电场浓度最小化的能力，即在沟槽的底壁处的栅极氧化膜处发生的电场浓度。

78. 发明授权

US07808003B2 Silicon carbide semiconductor device 失效
标题翻译：碳化硅半导体器件
公开(公告)号：US07808003B2
公开(公告)日：2010-10-05
申请号：US12285351
申请日：2008-10-02
申请人： Takeshi Endo , Eiichi Okuno
发明人： Takeshi Endo , Eiichi Okuno
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/7802 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0692 , H01L29/0847 , H01L29/0878 , H01L29/1608 , H01L29/45 , H01L29/6606 , H01L29/66068 , H01L29/7395 , H01L29/7397 , H01L29/7813 , H01L29/7828 , H01L29/8083 , H01L29/861 , H01L29/872
摘要： A silicon carbide semiconductor device is disclosed. The silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type and located on a first surface of the substrate; and a vertical type semiconductor element. The vertical type semiconductor element includes: an impurity layer having a second conductivity type, and located in a surface portion of the drift layer; and a first conductivity type region located in the drift layer, spaced away from the impurity layer, located closer to the substrate than the impurity layer, and having an impurity concentration higher than the drift layer.
摘要翻译：公开了一种碳化硅半导体器件。碳化硅半导体器件包括衬底; 具有第一导电类型且位于所述基板的第一表面上的漂移层; 和垂直型半导体元件。垂直型半导体元件包括：具有第二导电类型的杂质层，并且位于漂移层的表面部分中; 以及位于漂移层中的离开杂质层的第一导电类型区域，位于比杂质层更靠近衬底的位置，并且具有高于漂移层的杂质浓度。

79. 发明申请

US20100110865A1 Optical Information Recording and Reproducing Apparatus, and Cartridge 有权
标题翻译：光学信息记录和再现设备和墨盒
公开(公告)号：US20100110865A1
公开(公告)日：2010-05-06
申请号：US12606705
申请日：2009-10-27
申请人： Takeshi Endo , Hiroshi Hatano , Tetsuya Noda , Kazutaka Noguchi , Hiroyuki Matsuda , Shigeru Yamasaki
发明人： Takeshi Endo , Hiroshi Hatano , Tetsuya Noda , Kazutaka Noguchi , Hiroyuki Matsuda , Shigeru Yamasaki
IPC分类号： G11B7/135 , G11B23/03
CPC分类号： G11B7/083 , G11B7/0065 , G11B7/082 , G11B7/1362
摘要： An optical information recording and reproducing apparatus relating to the invention employs a two-beam interference method. In the optical information recording and reproducing apparatus, a moving device moves an information recording medium between a recording and reproducing position and a retracting position, and a mirror moves together with the information recording medium. When the information recording medium moves to the recording and reproducing position, the mirror moves to a position which is displaced from the at least one of the reference beam and the information beam. When the information recording medium moves to the retracting position, the mirror moves to a position where the mirror can reflect the at least one of the reference beam and the information beam toward a detector for detecting a deviation of the at least one of the reference beam and the information beam.
摘要翻译：本发明的光信息记录再现装置采用双光束干涉法。在光学信息记录和再现装置中，移动装置在记录和再现位置与缩回位置之间移动信息记录介质，并且反射镜与信息记录介质一起移动。当信息记录介质移动到记录和再现位置时，反射镜移动到从参考光束和信息光束中的至少一个偏移的位置。当信息记录介质移动到缩回位置时，反射镜移动到反射镜可以将参考光束和信息光束中的至少一个反射到检测器的位置，用于检测参考光束中的至少一个的偏差和信息光束。

80. 发明申请

US20090267082A1 Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20090267082A1
公开(公告)日：2009-10-29
申请号：US12385594
申请日：2009-04-14
申请人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi , Hirokazu Fujiwara
发明人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi , Hirokazu Fujiwara
IPC分类号： H01L29/872 , H01L29/24 , H01L21/329
CPC分类号： H01L29/861 , H01L21/0495 , H01L29/0657 , H01L29/1608 , H01L29/6606 , H01L29/7395 , H01L29/872
摘要： A semiconductor device includes: a semiconductor element having a first surface and a second surface; a first electrode disposed on the first surface of the element; a second electrode disposed on the second surface of the element; and an insulation film covers a part of the first electrode, the first surface of the element and a part of a sidewall of the element. The above semiconductor device has small dimensions and a high breakdown voltage.
摘要翻译：半导体器件包括：具有第一表面和第二表面的半导体元件; 设置在所述元件的第一表面上的第一电极; 设置在所述元件的第二表面上的第二电极; 并且绝缘膜覆盖第一电极的一部分，元件的第一表面和元件的侧壁的一部分。上述半导体器件具有小的尺寸和高的击穿电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式