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71. 发明授权

US07329317B2 Method for producing silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US07329317B2
公开(公告)日：2008-02-12
申请号：US10533147
申请日：2003-10-31
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/00 , C30B21/06 , C30B23/00 , C30B30/04 , C30B27/02
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region α2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. A silicon wafer is also produced wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region β1, and both the heat treatment condition and the oxygen concentration of the silicon crystal are controlled so that no OSF nuclei grow to OSFs.
摘要翻译：本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制，使得硅晶体中的硼浓度不低于1×10 18原子/ cm 3，并且生长条件V / G落在外延缺陷区域α2N中，其下限线LN 1是表示生长速率V逐渐下降的线随着硼浓度的增加。还生产硅晶片，其中硅晶体中的硼浓度和生长条件V / G被控制为至少包括外延缺陷区β1，并且热处理条件和控制硅晶体的氧浓度使得OSF核不生长到OSF。

72. 发明申请

US20070046419A1 Temperature sensor control apparatus 有权
标题翻译：温度传感器控制装置
公开(公告)号：US20070046419A1
公开(公告)日：2007-03-01
申请号：US11509566
申请日：2006-08-25
申请人： Hiroshi Inagaki , Yuji Oi
发明人： Hiroshi Inagaki , Yuji Oi
IPC分类号： H01C7/00 , H05B3/02
CPC分类号： G01K7/24 , G01K2205/04
摘要： A temperature sensor control apparatus includes a reference potential section, a driving potential section set to a driving electric potential, a temperature sensor configured to vary a resistance in accordance with a temperature, and disposed between the reference potential section and the driving potential section, a conduction path, two reference resistance elements each connected in series with the temperature sensor, a potential controlled point disposed in the conduction path between the reference resistance elements, a potential setting section configured to set an electric potential of the potential controlled point to the driving electric potential; and a resistance switching control section configured to control the potential setting section to switch the electric potential of the potential controlled point, and to switch each of the reference resistance elements to one of an energized state and a deenergized state.
摘要翻译：温度传感器控制装置包括参考电位部分，设置为驱动电位的驱动电位部分，配置为根据温度改变电阻并设置在参考电位部分和驱动电位部分之间的温度传感器，导通路径，与温度传感器串联连接的两个参考电阻元件，设置在参考电阻元件之间的导通路径中的电位受控点，被配置为将电势受控点的电势设定为驱动电潜在; 以及电阻切换控制部，被配置为控制所述电位设定部切换所述电位受控点的电位，并将所述基准电阻元件切换为通电状态和断电状态。

73. 发明授权

US06977010B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US06977010B2
公开(公告)日：2005-12-20
申请号：US10337456
申请日：2003-01-07
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , C30B15/14 , C30B15/30 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B35/00
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

74. 发明申请

US20050268840A1 Apparatus for pulling single crystal by CZ method 有权
公开(公告)号：US20050268840A1
公开(公告)日：2005-12-08
申请号：US11146541
申请日：2005-06-07
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , C30B15/14 , C30B15/30 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

75. 发明授权

US06635161B2 NOx sensor control circuit unit and NOx sensor system using the same 有权
标题翻译： NOx传感器控制电路单元和使用其的NOx传感器系统
公开(公告)号：US06635161B2
公开(公告)日：2003-10-21
申请号：US09252814
申请日：1999-02-19
申请人： Hiroshi Inagaki
发明人： Hiroshi Inagaki
IPC分类号： G01N27407
CPC分类号： G01N27/419 , G01N27/4065
摘要： A control circuit unit which enables an existing NOx sensor to serve not only as an NOx sensor but also as an oxygen concentration sensor by attachment to an existing NOx sensor. A control circuit unit 31 is connected to an NOx sensor 1. A first pump element control circuit 56 controls a voltage applied to a first pump element 3 so as to control the partial pressure of oxygen in a first processing chamber 9 such that an output voltage of an oxygen concentration detection element becomes substantially constant. A first pump current is detected using a current detection resistor 101 and is then output via an A/D converter circuit 65. A second pump element control circuit 57 applies a constant voltage to a second pump element 5 in a direction so as to pump out oxygen from a second processing chamber 10. A second pump current is detected using a current detection resistor 107 and is then output via an A/D converter circuit 65. A detection signal indicative of the first pump current is used for determining the oxygen concentration of a measurement gas. The detection signal indicative of the first pump current and a detection signal indicative of the second pump current are used for determining the NOx concentration of the measurement gas.
摘要翻译：一种控制电路单元，其使得现有的NOx传感器不仅可以用作NOx传感器，而且还可以通过附接到现有的NOx传感器作为氧浓度传感器。控制电路单元31连接到NOx传感器1.第一泵元件控制电路56控制施加到第一泵元件3的电压，以便控制第一处理室9中的氧分压使得输出电压的氧浓度检测元件变得基本恒定。使用电流检测电阻器101检测第一泵电流，然后经由A / D转换器电路65输出。第二泵元件控制电路57向第二泵元件5施加恒定电压，以使其泵出来自第二处理室10的氧。使用电流检测电阻器107检测第二泵电流，然后经由A / D转换器电路65输出。指示第一泵电流的检测信号用于确定氧浓度测量气体。指示第一泵电流的检测信号和表示第二泵电流的检测信号用于确定测量气体的NOx浓度。

76. 发明授权

US06539930B2 Ignition apparatus for internal combustion engine 失效
公开(公告)号：US06539930B2
公开(公告)日：2003-04-01
申请号：US10022696
申请日：2001-12-20
申请人： Hiroshi Inagaki
发明人： Hiroshi Inagaki
IPC分类号： F02P100
CPC分类号： F02P9/007 , F02P3/051
摘要： In an ignition apparatus for internal combustion engine, since a current caused to flow by an induced voltage generated at both ends of a secondary winding L2 when starting conduction to a primary winding L1 is checked from the conduction by diode for prevention of a reverse current 31, a spark discharge is not generated between the electrodes 13a-13b of the spark plug 13 when starting the conduction to a primary winding L1. After ending the spark discharge, the ionized current is generated between the electrodes of the spark plug by impressing the induced voltage (the ionized current generating voltage) created at both ends of the air-fuel mixture by a residual energy of the ignition coil 15.

77. 发明授权

US06533921B2 Apparatus for detecting concentration of nitrogen oxide 失效
标题翻译：用于检测氮氧化物浓度的装置
公开(公告)号：US06533921B2
公开(公告)日：2003-03-18
申请号：US09737771
申请日：2000-12-18
申请人： Shigeru Miyata , Noriaki Kondo , Hiroshi Inagaki
发明人： Shigeru Miyata , Noriaki Kondo , Hiroshi Inagaki
IPC分类号： G01N27407
CPC分类号： G01N27/417 , G01N27/4074 , G01N27/419
摘要： Apparatus for detecting the NOx concentration includes a first measurement chamber 20 communicating with the gas under measurement via a diffusion rate defining layer 4d and a second measurement chamber 26 communicating with the first measurement chamber 20 via diffusion limiting layers 6d, 22d. A first pump current IP1 is controlled so that an output of a Vs cell 6 will be equal to the reference voltage VCO for controlling the oxygen concentration in the first measurement chamber 20 to a pre-set low value. A constant voltage is applied across the second pump cell 8 for decomposing the NOx component in the second measurement chamber 26 for pumping out oxygen for detecting the NOx concentration from a second pump current IP2. The sensor temperature is detected from the internal resistance of the Vs cell for controlling the current supplied to the heaters 12, 14. If the temperature of the gas under measurement is changed rapidly, the sensor temperature is changed. The detected second pump current IP2 is corrected depending on an offset of the detected sensor temperature from the target temperature assuring detection of the NOx concentration to high accuracy.
摘要翻译：用于检测NOx浓度的装置包括通过扩散速率限定层4d与测量的气体连通的第一测量室20和经由扩散限制层6d，22d与第一测量室20连通的第二测量室26。控制第一泵电流IP1，使得Vs单元6的输出将等于用于将第一测量室20中的氧浓度控制为预定的低值的参考电压VCO。在第二泵电池8上施加恒定电压，以分解第二测量室26中的NOx组分，以从第二泵电流IP2泵出用于检测NOx浓度的氧气。从Vs单元的内部电阻检测传感器温度，用于控制供给到加热器12,14的电流。如果测量气体的温度快速变化，则传感器温度变化。检测到的第二泵电流IP2根据检测到的传感器温度与目标温度的偏移量进行校正，确保将NOx浓度检测到高精度。

78. 发明授权

US06222368B1 Ion current detection apparatus 失效
标题翻译：离子电流检测仪
公开(公告)号：US06222368B1
公开(公告)日：2001-04-24
申请号：US09238574
申请日：1999-01-28
申请人： Hiroshi Inagaki , Noriaki Kondo , Shigeru Miyata
发明人： Hiroshi Inagaki , Noriaki Kondo , Shigeru Miyata
IPC分类号： F02P1700
CPC分类号： F02P17/12 , F02P2017/125
摘要： An ion current detection apparatus which can detect ion current with a high degree of accuracy regardless of the presence of voltage damped oscillation and which does not cause contamination of a spark plug. A spark discharge current Isp generated upon spark discharge of a spark plug 10 flows through a charge diode 28, a capacitor 24, and a diode 22, which form a closed loop together with the spark plug 10 and a secondary winding L2 of an ignition coil 12 that constitutes an ignition apparatus. As a result, a Zener diode 26 connected in parallel to these components generates a Zener voltage Vz and thereby charges the capacitor 24. When a preset wait time has elapsed after the ignition timing for starting spark discharge, the discharge switch 30 short-circuits the opposite ends of the charge diode 28 to discharge the capacitor 24, so that a high voltage having a polarity opposite that in the case of spark discharge is applied to the spark plug. An ion current Iio flowing at this time is detected by use of a resistor 22 connected in parallel to the diode 22.
摘要翻译：一种离子电流检测装置，无论电压阻尼振荡的存在如何，都可以高精度地检测离子电流，并且不会引起火花塞的污染。在火花塞10的火花放电时产生的火花放电电流Isp流过与火花塞10和点火线圈的次级绕组L2形成闭环的充电二极管28，电容器24和二极管22 12构成点火装置。结果，与这些部件并联连接的齐纳二极管26产生齐纳电压Vz，从而对电容器24充电。当在启动火花放电的点火正时之后经过预设的等待时间时，放电开关30使充电二极管28的相对端，以对电容器24进行放电，使得与火花放电的极性相反的高电压被施加到火花塞。此时流过的离子电流Iio通过使用与二极管22并联连接的电阻器22来检测。

79. 发明授权

US5938836A Apparatus and method for manufacturing semiconductor single crystals 失效
标题翻译：用于制造半导体单晶的装置和方法
公开(公告)号：US5938836A
公开(公告)日：1999-08-17
申请号：US956434
申请日：1997-10-23
申请人： Junsuke Tomioka , Hiroshi Inagaki , Katsura Yamamoto
发明人： Junsuke Tomioka , Hiroshi Inagaki , Katsura Yamamoto
IPC分类号： C30B30/04 , C30B15/30 , H01L21/208 , C30B15/22
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1004
摘要： This invention provides an apparatus and a method for manufacturing semiconductor single crystals, which enable a steady process of pulling up high-quality single silicon crystals to be easily performed during the growing of silicon single crystals by the CZ method aided by applying a Cusp magnetic field. Three facing homopolar magnets (hereinafter referred to as magnet) 1, 2, and 3 arc disposed outside the single-crystal pulling up chamber. The magnet 3 is located at the same height as the free surface of the melt 6 stored in a quartz crucible as the free surface of the melt 6 stored in a quartz crucible 5. Furthermore, the strength of the magnets 3 is set to be weaker than that of the magnets 1 and 2. The flux lines of the magnets 3 substantially pass through the quartz crucible 5 in the horizontal direction. However, the flux lines of the magnet 3 do not reach the silicon single crystal 7 being pulled up. The flux lines perpendicular to the free surface of the melt 6 and the strength of the magnetic field near the growth boundary of the crystal are reduces. Thus, the amount of oxygen coming from the quartz crucible 5 and convection near the free surface of the melt 6, starting from the quartz crucible 5 toward the silicon single crystal, can be minimized.
摘要翻译：本发明提供一种用于制造半导体单晶的装置和方法，其能够通过CZ方法辅助通过应用Cusp磁场在C单独晶体生长期间提升高质量单晶硅的稳定过程。三面体上的单极磁体（以下称为磁体）1,2和3设置在单晶提拉室的外侧。磁体3位于与石英坩埚5中储存的熔体6的熔融物6的自由表面相同的高度，作为储存在石英坩埚5中的熔体6的自由表面。此外，磁体3的强度设定得较弱磁体3的磁通线在水平方向基本上通过石英坩埚5。然而，磁体3的磁通线未到达上拉的单晶硅7。垂直于熔体6的自由表面的磁通线和晶体生长边界附近的磁场的强度降低。因此，可以使来自石英坩埚5的氧的量和从石英坩埚5向硅单晶开始的熔融物6的自由表面附近的对流最小化。

80. 发明授权

US5885347A Apparatus and method for lifting single crystals 失效
标题翻译：单晶提升装置及方法
公开(公告)号：US5885347A
公开(公告)日：1999-03-23
申请号：US15132
申请日：1998-01-29
申请人： Junsuke Tomioka , Hiroshi Inagaki , Ayumi Suda , Toshimichi Kubota
发明人： Junsuke Tomioka , Hiroshi Inagaki , Ayumi Suda , Toshimichi Kubota
IPC分类号： C30B15/30 , B01D53/02
CPC分类号： C30B15/30 , Y10T117/1008 , Y10T117/1072
摘要： The object of this invention is to provide a method and a device for manufacturing semiconductor single crystals by the CZ method in response to the increase in the weight of semiconductor single crystal produced. The necked portion formed beneath the reduced portion can be held and the single crystal under lifting can be re-melted.
摘要翻译：本发明的目的是提供一种通过CZ方法制造半导体单晶的方法和装置，以响应所制造的半导体单晶的重量的增加。形成在缩小部分下方的颈部可以被保持，提升的单晶可以再熔化。

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