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71. 发明公开

US20240350573A1 ENU PHARMACEUTICAL COMPOSITION FOR TREATING OR PREVENTING NEUROPATHIC PAIN 审中-公开
公开(公告)号：US20240350573A1
公开(公告)日：2024-10-24
申请号：US18407894
申请日：2024-01-09
申请人： You Suk YOUN , Young Jin CHOI , Sang Ho LEE
发明人： You Suk YOUN , Young Jin CHOI , Sang Ho LEE
IPC分类号： A61K36/48 , A61K36/73 , A61K36/8969 , A61K36/899 , A61P25/04 , A61P29/00
CPC分类号： A61K36/48 , A61K36/73 , A61K36/8969 , A61K36/899 , A61P25/04 , A61P29/00 , A61K2236/331
摘要： The pharmaceutical composition for treating or preventing neuropathic pain includes Polygonati rhizoma, Sorbus commixta Hedl., Geranium nepalense, and Glycine Semen Preparata.

72. 发明申请

US20230023078A1 HERBAL COMPOSITION IN POWDER, PILL OR LIQUID FORM FOR SPEEDING UP FRACTURE HEALING AND BONE REGENERATION AND HERBAL FORMULATION IN POWDER, PILL OR LIQUID FORM CONTAINING THE SAME 有权
公开(公告)号：US20230023078A1
公开(公告)日：2023-01-26
申请号：US17692579
申请日：2022-03-11
申请人： Young Jin CHOI
发明人： Young Jin CHOI
IPC分类号： A61K36/8984 , A61K36/232 , A61K36/35 , A61K35/32 , A61K36/234 , A61K36/481 , A61K36/21 , A61K36/282 , A61K36/704 , A61K36/28 , A61P19/08
摘要： The present invention relates to an herbal composition in powder, pill or liquid form for speeding up fracture healing and bone regeneration, which may promote fracture healing and bone regeneration by containing medicinal herbs capable of improving fracture healing and bone regeneration and medicinal herbs capable of enhancing digestion and absorption, and an herbal formulation in powder, pill or liquid form containing the same. The herbal composition in powder, pill or liquid form for speeding up fracture healing and bone regeneration according to the present invention contains 20 parts by weight of Angelica gigas, 16 parts by weight of Dendrobium moniliforme, 12 parts by weight of Dipsaci radix, 10 parts by weight of antler, 8 parts by weight of Cnidium officinale, 8 parts by weight of Astragalus membranaceus, 4 parts by weight of Achyranthes japonica, and 4 parts by weight of Massa medicata fermentata.

73. 发明授权

US10279243B2 Skateboard with hand brake 有权
公开(公告)号：US10279243B2
公开(公告)日：2019-05-07
申请号：US15831982
申请日：2017-12-05
申请人： Young Jin Choi
发明人： Young Jin Choi
IPC分类号： A63C17/14 , A63C17/01
摘要： A skateboard with hand brake comprises a skateboard, a handle and a hand brake. A skateboard can be an ordinary skateboard or an electric motor skateboard. The handlebar has an “L” shape. The end of the lower part of the handle is fitted to the hanger of the front truck of the skateboard. A hand brake comprises a brake lever, a brake cable and a brake module. A brake lever is fitted to the upper part of the handle and a brake cable connects the brake lever to the brake module that is fitted underneath the deck.

74. 发明申请

US20160013362A1 NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：纳米结构半导体发光器件
公开(公告)号：US20160013362A1
公开(公告)日：2016-01-14
申请号：US14752814
申请日：2015-06-26
申请人： Jae Hyeok HEO , Jung Sub KIM , Young Jin CHOI , Jin Sub LEE , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN
发明人： Jae Hyeok HEO , Jung Sub KIM , Young Jin CHOI , Jin Sub LEE , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN
IPC分类号： H01L33/06 , H01L33/32 , H05B33/08 , H01L33/24 , H01L33/00 , H01L27/15 , H01L33/62
CPC分类号： H01L33/06 , H01L27/153 , H01L33/0025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H05B33/0803 , H01L2924/00014
摘要： There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.
摘要翻译：提供了一种纳米结构半导体发光器件，其包括由第一导电型半导体形成的基极层，设置在基底层上并具有多个开口的绝缘层，以及多个发光纳米结构，开口。每个发光纳米结构包括由第一导电型半导体形成的纳米孔，以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。多个发光纳米结构通过相同的生长工艺形成，并分成n组（其中n为2以上的整数），每组具有至少两个发光纳米结构。纳米孔的直径，高度和间距中的至少一个是不同的，使得有源层通过组发射具有不同波长的光。

75. 发明授权

US08823113B2 Gate electrode and gate contact plug layouts for integrated circuit field effect transistors 有权
标题翻译：用于集成电路场效应晶体管的栅电极和栅极接触插头布局
公开(公告)号：US08823113B2
公开(公告)日：2014-09-02
申请号：US12984762
申请日：2011-01-05
申请人： Kyo-Suk Chae , Satoru Yamada , Sang-Yeon Han , Young-Jin Choi , Wook-Je Kim
发明人： Kyo-Suk Chae , Satoru Yamada , Sang-Yeon Han , Young-Jin Choi , Wook-Je Kim
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L23/535 , H01L27/0207 , H01L29/0649 , H01L29/0847 , H01L29/42376 , H01L29/4238 , H01L29/4933 , H01L29/7833
摘要： A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four quadrants of the active region that are outside the common source region. Four drain regions are provided, a respective one of which is in a respective one of the four quadrants and spaced apart from the common source region. Finally, four gate electrodes are provided, a respective one of which is in a respective one of the four quadrants between the common source region and a respective one of the four drain regions. A respective gate electrode includes a vertex and first and second extending portions, the first extending portions extending from the vertex along the first direction and the second extending portions extending from the vertex along the second direction.
摘要翻译：四晶体管布局可以包括限定有源区域的隔离区域，有源区域沿第一和第二不同方向延伸。四个晶体管的共同源极区域从有源区域的中心沿着第一和第二方向延伸，以限定位于公共源极区域外的有源区域的四个象限。设置四个漏极区，其中的一个位于四个象限中的相应一个中并与公共源极区间隔开。最后，提供四个栅电极，其中的一个位于公共源极区域和四个漏极区域中的相应一个之间的四个象限中的相应一个中。相应的栅电极包括顶点和第一和第二延伸部分，第一延伸部分从顶点沿着第一方向延伸，第二延伸部分从顶点沿着第二方向延伸。

76. 发明授权

US08704228B2 Anti-fuse device and semiconductor device and system including the same 有权
标题翻译：防熔丝器件和半导体器件及系统包括相同
公开(公告)号：US08704228B2
公开(公告)日：2014-04-22
申请号：US13328097
申请日：2011-12-16
申请人： Woo-song Ahn , Satoru Yamada , Young-jin Choi
发明人： Woo-song Ahn , Satoru Yamada , Young-jin Choi
IPC分类号： H01L29/04
CPC分类号： H01L23/5252 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： An anti-fuse device includes a gate electrode on a semiconductor substrate, a gate insulating layer between the semiconductor substrate and the gate electrode, junction regions in the semiconductor substrate adjacent the gate electrode, and at least one anti-breakdown material layer between the junction regions, the gate insulating layer being between the gate electrode and the anti-breakdown material layer.
摘要翻译：反熔丝器件包括半导体衬底上的栅电极，半导体衬底和栅电极之间的栅极绝缘层，与栅电极相邻的半导体衬底中的接合区域，以及至少一个在该连接点之间的抗击穿材料层区域，栅极绝缘层位于栅电极和抗分解材料层之间。

77. 发明申请

US20130242180A1 APPARATUS FOR AUTOMATIC OBSERVATION OF CLIMATIC CONDITIONS OF THE SKY 有权
标题翻译：用于自动观察天空气候条件的装置
公开(公告)号：US20130242180A1
公开(公告)日：2013-09-19
申请号：US13885090
申请日：2011-12-09
申请人： Jung Jang Kwon , Bok Soo Jang , Chul Gyu Lee , Young Jin Choi , Geun Hee Lee
发明人： Jung Jang Kwon , Bok Soo Jang , Chul Gyu Lee , Young Jin Choi , Geun Hee Lee
IPC分类号： G01W1/00
CPC分类号： G01W1/00 , H04N5/225
摘要： An automatic observation apparatus of sky climate conditions is provided in which an opening and closing device is designed such that a lid moves upward and downward by an elevator so as to open and close the upper portion of an observer and thus, although it snows in winter, the lid moves upward and downward while maintaining a state in which snow is accumulated on the lid, the snow does not collapse due to movement of the lid and does not fall onto a transparent cover of the observer, and thereby obstruction of a visual field of a camera by snow is prevented.
摘要翻译：提供了一种天空气候条件的自动观察装置，其中开闭装置被设计成使得盖子通过电梯上下移动，以便打开和关闭观察者的上部，因此尽管冬季下雪在保持雪积存在盖子上的状态的同时，盖子上下移动，由于盖子的移动，积雪不会塌陷，并且不会落在观察者的透明盖上，从而阻碍视场的相机被雪阻止。

78. 发明申请

US20130184112A1 PLANETARY GEAR SYSTEM USING TOW INPUT CHARACTERISTIC AND GEAR MODULE THEREOF AND METHOD FOR CONTROLLING THE SAME 审中-公开
标题翻译：使用拖曳输入特性和齿轮模块的行星齿轮系统及其控制方法
公开(公告)号：US20130184112A1
公开(公告)日：2013-07-18
申请号：US13822759
申请日：2011-09-09
申请人： Young Jin Choi , Ho Yul Lee
发明人： Young Jin Choi , Ho Yul Lee
IPC分类号： F16H37/08 , F16H37/06
CPC分类号： F16H37/0826 , B62M6/55 , F16H1/16 , F16H37/065 , F16H37/0806 , Y10T74/19014
摘要： Disclosed are a planetary gear system using tow input characteristics, a gear module thereof, and a method for controlling the same, which exhibit an effect of the gear shift using two motor characteristics, and also a gear module thereof, and a method for controlling the same. A gear system including a first gear unit; a second gear unit that rotates to mesh with the first gear unit; a third gear unit that rotates to mesh with at least one of the first gear unit and the second gear unit; and a driving source that generates a driving force. Two gear units of the first to third gear units serve as input parts to which driving forces from the driving source are transmitted, respectively, and the rest one gear unit serves as an output part from which a resultant force obtained by combining the driving forces is output.
摘要翻译：本发明公开了一种使用丝束输入特性的行星齿轮系统，其齿轮模块及其控制方法，其显示出使用两个电动机特性的变速器的效果，以及其齿轮模块，以及用于控制相同。一种齿轮系统，包括第一齿轮单元; 第二齿轮单元，其旋转以与所述第一齿轮单元啮合; 第三齿轮单元，其旋转以与所述第一齿轮单元和所述第二齿轮单元中的至少一个啮合; 以及产生驱动力的驱动源。第一至第三齿轮单元的两个减速器分别用作来自驱动源的驱动力的输入部分，其余的一个齿轮单元用作输出部分，通过组合驱动力而获得的合力是输出。

79. 发明授权

US08430961B2 Source gas flow path control in PECVD system to control a by-product film deposition on inside chamber 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US08430961B2
公开(公告)日：2013-04-30
申请号：US12205363
申请日：2008-09-05
申请人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

80. 发明申请

US20130087783A1 METHODS FOR DEPOSITING A SILICON CONTAINING LAYER WITH ARGON GAS DILUTION 有权
标题翻译：用含有气体稀释剂的含硅层的方法
公开(公告)号：US20130087783A1
公开(公告)日：2013-04-11
申请号：US13630901
申请日：2012-09-28
申请人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
发明人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
IPC分类号： H01L21/316 , H01L21/31 , H01L29/786
CPC分类号： H01L21/31 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02664 , H01L21/02675 , H01L29/66757 , H01L29/786 , H01L29/7869 , H01L2021/775
摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要翻译：本公开的实施例通常提供在TFT器件中形成含硅层的方法。硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

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