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71. 发明申请

US20080318405A1 METHOD OF FABRICATING GATE STRUCTURE 有权
标题翻译：制造门式结构的方法
公开(公告)号：US20080318405A1
公开(公告)日：2008-12-25
申请号：US12192128
申请日：2008-08-15
申请人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/3205
CPC分类号： H01L21/28202 , H01L21/28088 , H01L21/76822 , H01L29/4966 , H01L29/517 , H01L29/518
摘要： A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.
摘要翻译：提供一种制造栅极结构的方法。首先，在基板上形成牺牲氧化物层。进行氮化处理工艺以重新分配牺牲层和衬底中的氮原子。接下来，除去牺牲氧化物层。进行再氧化处理以在衬底的表面上产生界面层。在基板上依次形成高K（介电常数）栅介质层，阻挡层和金属层。限定金属层，势垒层，高K栅极介电层和界面层以形成层叠栅极结构。

72. 发明申请

US20080106914A1 Point light source having light guide portion and backlight module using same 有权
标题翻译：具有导光部的点光源和使用其的背光模块
公开(公告)号：US20080106914A1
公开(公告)日：2008-05-08
申请号：US11983018
申请日：2007-11-05
申请人： Ying Wei , Chih-Hung Chang
发明人： Ying Wei , Chih-Hung Chang
IPC分类号： F21V8/00
CPC分类号： G02B6/0028
摘要： An exemplary point light source (20) includes a light emitting body (230), and a light guide portion (210) adjacent the light emitting body. The light emitting body includes an illuminating portion configured for providing light beams, and a shell packaging the illuminating portion. The light guide portion is configured for guiding the light beams to propagate in desired directions. A size of a cross-section of the light guide portion far away from the light emitting body is less than a size of a cross-section of the light guide portion adjacent to the light emitting body. A backlight module (200) using the point light source is also provided.
摘要翻译：示例性点光源（20）包括发光体（230）和与发光体相邻的导光部（210）。发光体包括被配置为提供光束的照明部分和包装照明部分的外壳。导光部分被配置为引导光束沿期望的方向传播。远离发光体的导光部的截面尺寸小于与发光体相邻的导光部的截面尺寸。还提供了使用点光源的背光模块（200）。

73. 发明授权

US07214631B2 Method of forming gate dielectric layer 有权
标题翻译：形成栅极电介质层的方法
公开(公告)号：US07214631B2
公开(公告)日：2007-05-08
申请号：US10906008
申请日：2005-01-31
申请人： Yu-Ren Wang , Ying-Wei Yen , Liyuan Cheng , Kuo-Tai Huang
发明人： Yu-Ren Wang , Ying-Wei Yen , Liyuan Cheng , Kuo-Tai Huang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： A method for forming a gate dielectric layer is described. A silicon oxide layer is formed on a semiconductor substrate. Then, a first and a second nitrogen doping processes are performed in sequence to the silicon oxide layer using plasma comprising inert gas and gaseous nitrogen to form a gate dielectric layer. The first nitrogen doping process is performed at a lower power, a lower pressure and a higher inert gas to nitrogen gas ratio than those at the second nitrogen doping process. The combination of the deeper nitrogen distribution of the first nitrogen doping process and the shallower nitrogen distribution of the second nitrogen doping process produces a flatter total nitrogen distribution profile so that leakage current from electron tunneling through the gate dielectric layer can be reduced.
摘要翻译：描述了形成栅介质层的方法。在半导体衬底上形成氧化硅层。然后，使用包含惰性气体和气态氮的等离子体，依次对氧化硅层进行第一和第二氮掺杂工艺以形成栅极电介质层。第一氮掺杂过程在低功率，低压和高惰性气体与氮气比之下进行，与第二氮掺杂过程相比。第一氮掺杂过程的较深氮分布和第二氮掺杂过程的较浅氮分布的组合产生更平坦的总氮分布分布，从而可以减少来自电介质穿过栅介质层的漏电流。

74. 发明申请

US20070082503A1 METHOD OF FABRICATING A DIELECTRIC LAYER 审中-公开
标题翻译：制作电介质层的方法
公开(公告)号：US20070082503A1
公开(公告)日：2007-04-12
申请号：US11163218
申请日：2005-10-11
申请人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/3144
摘要： A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process includes inert gas and oxygen. The first gas has a first partial pressure ratio of inert gas to oxygen. The dielectric layer is performed with the second annealing process. A second gas used in the second annealing includes inert gas and oxygen. The second gas has a second partial pressure ratio of inert gas to oxygen, and the second partial pressure ratio is smaller than the first partial pressure ratio. At least one annealing temperature of the two annealing processes is equal to or greater than 950° C. The invention improves uniformity of nitrogen dopants distributed in dielectric layer.
摘要翻译：描述制造介电层的方法。提供衬底，并且在衬底上形成电介质层。介电层通过氮化处理进行。介电层通过第一退火工艺进行。在第一退火工艺中使用的第一种气体包括惰性气体和氧气。第一气体具有惰性气体与氧的第一分压比。介电层通过第二退火工艺进行。在第二退火中使用的第二气体包括惰性气体和氧气。第二气体具有惰性气体与氧气的第二分压比，第二分压比小于第一分压比。两个退火工艺的至少一个退火温度等于或大于950℃。本发明改善了分布在介电层中的氮掺杂剂的均匀性。

75. 发明授权

US07119924B2 Detection and segmentation of sweeps in color graphics images 有权
公开(公告)号：US07119924B2
公开(公告)日：2006-10-10
申请号：US09966030
申请日：2001-09-28
申请人： Salil Prabhakar , Raja Bala , Hui Cheng , John C. Handley , Ying-wei Lin
发明人： Salil Prabhakar , Raja Bala , Hui Cheng , John C. Handley , Ying-wei Lin
IPC分类号： G06F15/00
CPC分类号： G06T7/90 , G06T7/11 , G06T2207/30176
摘要： A process for color graphics image processing, related to detection and segmentation of sweeps, is provided. An input graphics image is transformed into a three-dimensional histogram in an appropriate color space 104 (e.g., CIELUV). Two-dimensional histograms are estimated from the three-dimensional histogram 106. The two-dimensional histograms are processed to detect and segment sweeps 108. Sweep segment information from the processing of the two-dimensional histograms is combined 110. The combined sweep segment information is used to process the input graphics image to identify and segment sweeps 112. Post-processing may be optionally and selectively used to reject false alarms (i.e., areas falsely identified as sweeps) 114.

76. 发明申请

US20060189065A1 Method of manufacturing metal-oxide-semiconductor transistor 有权
标题翻译：制造金属氧化物半导体晶体管的方法
公开(公告)号：US20060189065A1
公开(公告)日：2006-08-24
申请号：US11378004
申请日：2006-03-17
申请人： Yun-Ren Wang , Ying-Wei Yen , Tony Liu
发明人： Yun-Ren Wang , Ying-Wei Yen , Tony Liu
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L29/6659 , H01L29/6656 , H01L29/7833
摘要： A method of manufacturing a metal-oxide-semiconductor transistor is provided. A substrate having a gate structure thereon is provided. A source/drain extension region is formed in the substrate on each side of the gate structure. Thereafter, a carbon-containing material layer is formed over the substrate and then the carbon-containing material layer is etched back to form spacers on the sidewalls of the gate structure. Finally, a source/drain region is formed in the substrate on each side of the spacer-coated gate structure.
摘要翻译：提供一种制造金属氧化物半导体晶体管的方法。提供其上具有栅极结构的衬底。在栅极结构的每一侧的衬底中形成源极/漏极延伸区域。此后，在衬底上形成含碳材料层，然后将含碳材料层回蚀刻以在栅极结构的侧壁上形成间隔物。最后，在间隔物涂覆的栅极结构的每一侧上的衬底中形成源/漏区。

77. 发明授权

US07058350B2 Copier or scanner platen cover with fluorescent coating 失效
公开(公告)号：US07058350B2
公开(公告)日：2006-06-06
申请号：US09683536
申请日：2002-01-16
申请人： Bing R. Hsieh , Ying-wei Lin , Leon C. Williams
发明人： Bing R. Hsieh , Ying-wei Lin , Leon C. Williams
IPC分类号： G03G15/00
CPC分类号： H04N1/00551 , H04N1/00519
摘要： A platen cover for an imaging device such as a copier or scanner includes a substrate and at least of portion of the surface of the substrate is coated with a fluorescent coating. Preferably, the substrate has a dark or black color. The dark color of the substrate substantially reduces or eliminates show through of an image on the backside of an original document when the platen cover is not exposed to a light source for imaging. At the same time, when holes or uneven borders are present in the original document, the fluorescent coating fluoresces upon exposure to the light source at these regions of the original document, making these portions appear white in the replicated image and thereby substantially reducing or eliminating the unsightly appearance of these portions as black portions in the replicated image.

78. 发明申请

US20060062913A1 PROCESS FOR DEPOSITING BTBAS-BASED SILICON NITRIDE FILMS 审中-公开
标题翻译：用于沉积基于BTBAS的氮化硅膜的方法
公开(公告)号：US20060062913A1
公开(公告)日：2006-03-23
申请号：US10711414
申请日：2004-09-17
申请人： Yun-Ren Wang , Ying-Wei Yen , Hao-Hsiang Chang , Tsai-Fu Hsiao
发明人： Yun-Ren Wang , Ying-Wei Yen , Hao-Hsiang Chang , Tsai-Fu Hsiao
IPC分类号： C23C16/00
CPC分类号： C23C16/345 , C23C16/4412
摘要： A chemical vapor deposition (CVD) system comprises a tubular furnace, at least one BTBAS supply piping line connected to a base portion of the tubular furnace, an exhaust piping line connected to an upper portion of the tubular furnace, a bypass line connecting the BTBAS supply piping line with the exhaust piping line, and a vacuum pump connected to the exhaust piping line, wherein the bypass line is initially interrupted. A batch of wafers is placed into a tube of the tubular furnace. Nitrogen-containing gas and carrier gas are flowed into the tube. BTBAS is flowed into the tube through the BTBAS supply piping line. A silicon nitride deposition process is then carried out in the tube to deposit a BTBAS-based silicon nitride film on the wafers. Upon completion of the silicon nitride deposition process, the BTBAS supply piping line is blocked and the initially interrupted bypass line is opened.
摘要翻译：化学气相沉积（CVD）系统包括管式炉，连接到管状炉的基部的至少一个BTBAS供应管线，连接到管式炉的上部的排气管线，连接BTBAS的旁通管与排气管线一起供给管线，以及连接到排气管线的真空泵，其中旁路管线最初被中断。将一批晶片放入管式炉的管中。含氮气体和载气流入管中。 BTBAS通过BTBAS电源管线流入管。然后在管中进行氮化硅沉积工艺，以在晶片上沉积基于BTBAS的氮化硅膜。完成氮化硅沉积工艺后，BTBAS供电管线被堵塞，最初中断的旁路管路被打开。

79. 发明授权

US06947597B2 Soft picture/graphics classification system and method 失效
标题翻译：软图片/图形分类系统和方法
公开(公告)号：US06947597B2
公开(公告)日：2005-09-20
申请号：US09965880
申请日：2001-09-28
申请人： Ying-wei Lin , Stuart A. Schweid , Jeng-nan Shiau , Raja Bala , Zhigang Fan
发明人： Ying-wei Lin , Stuart A. Schweid , Jeng-nan Shiau , Raja Bala , Zhigang Fan
IPC分类号： G06K9/20 , G06T5/00 , H04N1/40 , G06K9/62
CPC分类号： H04N1/40062 , G06K9/00456
摘要： A method and system for image processing, in conjunction with classification of images between natural pictures and synthetic graphics, using SGLD texture (e.g., variance, bias, skewness, and fitness), color discreteness (e.g., R_L, R_U, and R_V normalized histograms), or edge features (e.g., pixels per detected edge, horizontal edges, and vertical edges) is provided. In another embodiment, a picture/graphics classifier using combinations of SGLD texture, color discreteness, and edge features is provided. In still another embodiment, a “soft” image classifier using combinations of two (2) or more SGLD texture, color discreteness, and edge features is provided. The “soft” classifier uses image features to classify areas of an input image in picture, graphics, or fuzzy classes.
摘要翻译：一种用于图像处理的方法和系统，结合使用SGLD纹理（例如，方差，偏差，偏度和适应度）的自然图像和合成图像之间的图像分类，颜色离散性（例如，R_L，R_U和R_V归一化直方图）或边缘特征（例如，每个检测到的边缘的像素，水平边缘和垂直边缘）。在另一个实施例中，提供了使用SGLD纹理，颜色离散性和边缘特征的组合的图片/图形分类器。在另一个实施例中，提供了使用两（2）或更多SGLD纹理，颜色离散性和边缘特征的组合的“软”图像分类器。 “软”分类器使用图像特征来对图像，图形或模糊类中的输入图像的区域进行分类。

80. 发明授权

US06839152B2 Adaptive filtering method and apparatus for descreening scanned halftoned image representations 失效
标题翻译：用于对已扫描的半色调图像表示进行去网的自适应滤波方法和装置
公开(公告)号：US06839152B2
公开(公告)日：2005-01-04
申请号：US09731131
申请日：2000-12-06
申请人： Zhigang Fan , Ying-Wei Lin , Hong Li
发明人： Zhigang Fan , Ying-Wei Lin , Hong Li
IPC分类号： G06T5/00 , G06T5/20 , H04N1/40 , H04N1/405 , G06K15/00
CPC分类号： H04N1/40075
摘要： An adaptive filtering method and apparatus for descreening a scanned halftoned image representation is disclosed. The apparatus includes an image input subsystem; a processing subsystem for processing halftoned image data provided by the image input subsystem; and software/firmware means operative on the processing subsystem for a) low-pass filtering a halftoned input pixel value provided by the image input subsystem to produce a low-pass filtered pixel value; b) notch-filtering the halftoned input pixel value to produce a notch-filtered pixel value; c) determining a local contrast value for the halftoned input pixel value; and d) producing a descreened output pixel value based on the low-pass filtered pixel value, the notch-filtered pixel value, or a combination of the low-pass filtered pixel value and the notch-filtered pixel value depending on the local contrast value.

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