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1. 发明授权

US07811892B2 Multi-step annealing process 有权
标题翻译：多步退火工艺
公开(公告)号：US07811892B2
公开(公告)日：2010-10-12
申请号：US11308508
申请日：2006-03-31
申请人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/477
CPC分类号： H01L21/02337 , H01L21/02318 , H01L21/02329 , H01L21/0234 , H01L21/324 , H01L21/823462 , H01L29/66537 , H01L29/78
摘要： A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process includes inert gas and oxygen. The first gas has a first partial pressure ratio of inert gas to oxygen. The dielectric layer is performed with the second annealing process. A second gas used in the second annealing includes inert gas and oxygen. The second gas has a second partial pressure ratio of inert gas to oxygen, and the second partial pressure ratio is smaller than the first partial pressure ratio. At least one annealing temperature of the two annealing processes is equal to or greater than 950° C. The invention improves uniformity of nitrogen dopants distributed in dielectric layer.
摘要翻译：描述制造介电层的方法。提供衬底，并且在衬底上形成电介质层。介电层通过氮化处理进行。介电层通过第一退火工艺进行。在第一退火工艺中使用的第一种气体包括惰性气体和氧气。第一气体具有惰性气体与氧的第一分压比。介电层通过第二退火工艺进行。在第二退火中使用的第二气体包括惰性气体和氧气。第二气体具有惰性气体与氧气的第二分压比，第二分压比小于第一分压比。两个退火工艺的至少一个退火温度等于或大于950℃。本发明改善了分布在介电层中的氮掺杂剂的均匀性。

2. 发明授权

US07709316B2 Method of fabricating gate structure 有权
标题翻译：栅极结构的制作方法
公开(公告)号：US07709316B2
公开(公告)日：2010-05-04
申请号：US12192128
申请日：2008-08-15
申请人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/8249
CPC分类号： H01L21/28202 , H01L21/28088 , H01L21/76822 , H01L29/4966 , H01L29/517 , H01L29/518
摘要： A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.
摘要翻译：提供一种制造栅极结构的方法。首先，在基板上形成牺牲氧化物层。进行氮化处理工艺以重新分配牺牲层和衬底中的氮原子。接下来，除去牺牲氧化物层。进行再氧化处理以在衬底的表面上产生界面层。在基板上依次形成高K（介电常数）栅介质层，阻挡层和金属层。限定金属层，势垒层，高K栅极介电层和界面层以形成层叠栅极结构。

3. 发明申请

US20070102774A1 GATE STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：门结构及其制作方法
公开(公告)号：US20070102774A1
公开(公告)日：2007-05-10
申请号：US11164025
申请日：2005-11-08
申请人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L29/78 , H01L21/4763
CPC分类号： H01L21/28202 , H01L21/28088 , H01L21/76822 , H01L29/4966 , H01L29/517 , H01L29/518
摘要： A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate and produce a concentration profile such that the concentration of nitrogen progressively increases and then decreases toward the substrate with the maximum concentration of nitrogen in the sacrificial oxide layer. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.
摘要翻译：提供一种制造栅极结构的方法。首先，在基板上形成牺牲氧化物层。进行氮化处理工艺以重新分配牺牲层和衬底中的氮原子，并产生浓度分布，使得氮的浓度逐渐增加，然后在牺牲氧化物层中具有氮的最大浓度朝向衬底减小。接下来，除去牺牲氧化物层。进行再氧化处理以在衬底的表面上产生界面层。在基板上依次形成高K（介电常数）栅介质层，阻挡层和金属层。限定金属层，势垒层，高K栅极介电层和界面层以形成层叠栅极结构。

4. 发明申请

US20080318405A1 METHOD OF FABRICATING GATE STRUCTURE 有权
标题翻译：制造门式结构的方法
公开(公告)号：US20080318405A1
公开(公告)日：2008-12-25
申请号：US12192128
申请日：2008-08-15
申请人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/3205
CPC分类号： H01L21/28202 , H01L21/28088 , H01L21/76822 , H01L29/4966 , H01L29/517 , H01L29/518
摘要： A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.
摘要翻译：提供一种制造栅极结构的方法。首先，在基板上形成牺牲氧化物层。进行氮化处理工艺以重新分配牺牲层和衬底中的氮原子。接下来，除去牺牲氧化物层。进行再氧化处理以在衬底的表面上产生界面层。在基板上依次形成高K（介电常数）栅介质层，阻挡层和金属层。限定金属层，势垒层，高K栅极介电层和界面层以形成层叠栅极结构。

5. 发明申请

US20070082503A1 METHOD OF FABRICATING A DIELECTRIC LAYER 审中-公开
标题翻译：制作电介质层的方法
公开(公告)号：US20070082503A1
公开(公告)日：2007-04-12
申请号：US11163218
申请日：2005-10-11
申请人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/3144
摘要： A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process includes inert gas and oxygen. The first gas has a first partial pressure ratio of inert gas to oxygen. The dielectric layer is performed with the second annealing process. A second gas used in the second annealing includes inert gas and oxygen. The second gas has a second partial pressure ratio of inert gas to oxygen, and the second partial pressure ratio is smaller than the first partial pressure ratio. At least one annealing temperature of the two annealing processes is equal to or greater than 950° C. The invention improves uniformity of nitrogen dopants distributed in dielectric layer.
摘要翻译：描述制造介电层的方法。提供衬底，并且在衬底上形成电介质层。介电层通过氮化处理进行。介电层通过第一退火工艺进行。在第一退火工艺中使用的第一种气体包括惰性气体和氧气。第一气体具有惰性气体与氧的第一分压比。介电层通过第二退火工艺进行。在第二退火中使用的第二气体包括惰性气体和氧气。第二气体具有惰性气体与氧气的第二分压比，第二分压比小于第一分压比。两个退火工艺的至少一个退火温度等于或大于950℃。本发明改善了分布在介电层中的氮掺杂剂的均匀性。

6. 发明授权

US07435640B2 Method of fabricating gate structure 有权
标题翻译：栅极结构的制作方法
公开(公告)号：US07435640B2
公开(公告)日：2008-10-14
申请号：US11164025
申请日：2005-11-08
申请人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/8238
CPC分类号： H01L21/28202 , H01L21/28088 , H01L21/76822 , H01L29/4966 , H01L29/517 , H01L29/518
摘要： A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate and produce a concentration profile such that the concentration of nitrogen progressively increases and then decreases toward the substrate with the maximum concentration of nitrogen in the sacrificial oxide layer. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.
摘要翻译：提供一种制造栅极结构的方法。首先，在基板上形成牺牲氧化物层。进行氮化处理工艺以重新分配牺牲层和衬底中的氮原子，并产生浓度分布，使得氮的浓度逐渐增加，然后在牺牲氧化物层中具有氮的最大浓度朝向衬底减小。接下来，除去牺牲氧化物层。进行再氧化处理以在衬底的表面上产生界面层。在基板上依次形成高K（介电常数）栅介质层，阻挡层和金属层。限定金属层，势垒层，高K栅极介电层和界面层以形成层叠栅极结构。

7. 发明申请

US20080157231A1 GATE STRUCTURE 审中-公开
标题翻译：门结构
公开(公告)号：US20080157231A1
公开(公告)日：2008-07-03
申请号：US12046433
申请日：2008-03-11
申请人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L29/94
CPC分类号： H01L21/28202 , H01L21/28088 , H01L21/76822 , H01L29/4966 , H01L29/517 , H01L29/518
摘要： A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate and produce a concentration profile such that the concentration of nitrogen progressively increases and then decreases toward the substrate with the maximum concentration of nitrogen in the sacrificial oxide layer. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.
摘要翻译：提供一种制造栅极结构的方法。首先，在基板上形成牺牲氧化物层。进行氮化处理工艺以重新分配牺牲层和衬底中的氮原子，并产生浓度分布，使得氮的浓度逐渐增加，然后在牺牲氧化物层中具有氮的最大浓度朝向衬底减小。接下来，除去牺牲氧化物层。进行再氧化处理以在衬底的表面上产生界面层。在基板上依次形成高K（介电常数）栅介质层，阻挡层和金属层。限定金属层，势垒层，高K栅极介电层和界面层以形成层叠栅极结构。

8. 发明申请

US20070082506A1 MULTI-STEP ANNEALING PROCESS 有权
标题翻译：多步骤退火工艺
公开(公告)号：US20070082506A1
公开(公告)日：2007-04-12
申请号：US11308508
申请日：2006-03-31
申请人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02337 , H01L21/02318 , H01L21/02329 , H01L21/0234 , H01L21/324 , H01L21/823462 , H01L29/66537 , H01L29/78
摘要： A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process includes inert gas and oxygen. The first gas has a first partial pressure ratio of inert gas to oxygen. The dielectric layer is performed with the second annealing process. A second gas used in the second annealing includes inert gas and oxygen. The second gas has a second partial pressure ratio of inert gas to oxygen, and the second partial pressure ratio is smaller than the first partial pressure ratio. At least one annealing temperature of the two annealing processes is equal to or greater than 950° C. The invention improves uniformity of nitrogen dopants distributed in dielectric layer.
摘要翻译：描述制造介电层的方法。提供衬底，并且在衬底上形成电介质层。介电层通过氮化处理进行。介电层通过第一退火工艺进行。在第一退火工艺中使用的第一种气体包括惰性气体和氧气。第一气体具有惰性气体与氧的第一分压比。介电层通过第二退火工艺进行。在第二退火中使用的第二气体包括惰性气体和氧气。第二气体具有惰性气体与氧气的第二分压比，第二分压比小于第一分压比。两个退火工艺的至少一个退火温度等于或大于950℃。本发明改善了分布在介电层中的氮掺杂剂的均匀性。

9. 发明授权

US07265065B2 Method for fabricating dielectric layer doped with nitrogen 有权
标题翻译：用氮化物制造电介质层的方法
公开(公告)号：US07265065B2
公开(公告)日：2007-09-04
申请号：US10908157
申请日：2005-04-29
申请人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Kuo-Tai Huang
IPC分类号： H01L21/318
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： A method for fabricating a dielectric layer doped with nitrogen is provided according to the present invention. According to the method, a dielectric layer is formed on a semiconductor substrate. Two steps of nitridation processes are then performed on the dielectric layer. Following that, one step or two steps of annealing processes are performed on the dielectric layer. Dielectric layer formed by the method has uniform nitrogen dopant, and thus has fine electric properties.
摘要翻译：根据本发明提供了一种用于制造掺杂有氮的电介质层的方法。根据该方法，在半导体衬底上形成介电层。然后在介电层上进行两步氮化处理。之后，在电介质层上进行一步或两步的退火处理。通过该方法形成的介电层具有均匀的氮掺杂剂，因此具有良好的电性能。

10. 发明申请

US20060246739A1 Method for Fabricating Dielectric Layer Doped with Nitrogen 有权
标题翻译：用氮气掺杂介质层的方法
公开(公告)号：US20060246739A1
公开(公告)日：2006-11-02
申请号：US10908157
申请日：2005-04-29
申请人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Kuo-Tai Huang
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： A method for fabricating a dielectric layer doped with nitrogen is provided according to the present invention. According to the method, a dielectric layer is formed on a semiconductor substrate. Two steps of nitridation processes are then performed on the dielectric layer. Following that, one step or two steps of annealing processes are performed on the dielectric layer. Dielectric layer formed by the method has uniform nitrogen dopant, and thus has fine electric properties.
摘要翻译：根据本发明提供了一种用于制造掺杂有氮的电介质层的方法。根据该方法，在半导体衬底上形成介电层。然后在介电层上进行两步氮化处理。之后，在电介质层上进行一步或两步的退火处理。通过该方法形成的介电层具有均匀的氮掺杂剂，因此具有良好的电性能。

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