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71. 发明授权

US08498003B2 Job log control method, computer readable medium for the same, image processing device, and image processing system 有权
标题翻译：作业日志控制方法，相同的计算机可读介质，图像处理装置和图像处理系统
公开(公告)号：US08498003B2
公开(公告)日：2013-07-30
申请号：US11485372
申请日：2006-07-13
申请人： Kazuko Kirihara , Masafumi Ono , Toshiaki Arai
发明人： Kazuko Kirihara , Masafumi Ono , Toshiaki Arai
IPC分类号： G06F3/12
CPC分类号： H04N1/00244 , G06F3/1207 , G06F3/1273 , G06F3/1288 , H04N1/32101 , H04N2201/0039 , H04N2201/0094 , H04N2201/3202 , H04N2201/3226 , H04N2201/3274 , H04N2201/3278
摘要： According to an aspect of the invention, there is provided a storage medium readable by a computer, the storage medium storing a program of instructions executable by the computer to perform a function for controlling a job log, comprising: generating a job log after execution of a job; creating a log image from an image handled in the job; and performing transfer of the job log and the log image to an external device with predetermined timing.
摘要翻译：根据本发明的一个方面，提供了一种可由计算机读取的存储介质，所述存储介质存储由所述计算机执行的指令程序，以执行用于控制作业日志的功能，所述存储介质包括：在执行一份工作; 从作业中处理的图像创建日志图像; 并且以预定的定时执行将作业日志和日志图像传送到外部设备。

72. 发明授权

US08497504B2 Thin film transistor and display unit 有权
标题翻译：薄膜晶体管和显示单元
公开(公告)号：US08497504B2
公开(公告)日：2013-07-30
申请号：US13287689
申请日：2011-11-02
申请人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
发明人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
IPC分类号： H01L29/10
CPC分类号： H01L27/3262 , H01L27/1225 , H01L29/41733 , H01L29/458 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2251/5315
摘要： A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.
摘要翻译：能够使能够容易地供给氧化物半导体层的氧和良好的晶体管特性的薄膜晶体管能够恢复，并且包括该薄膜晶体管的显示单元。薄膜晶体管在基板上顺序地包括栅电极，栅极绝缘膜，包括沟道区的氧化物半导体层，以及覆盖沟道区A的沟道保护层。源极和漏电极形成在氧化物位于沟道保护层两侧的半导体层，源电极和漏电极中的至少一个具有露出氧化物半导体层的孔。

73. 发明申请

US20130089940A1 METHOD OF MANUFACTURING DISPLAY UNIT 有权
标题翻译：制造显示单元的方法
公开(公告)号：US20130089940A1
公开(公告)日：2013-04-11
申请号：US13613337
申请日：2012-09-13
申请人： Toshiaki Arai , Takashige Fujimori
发明人： Toshiaki Arai , Takashige Fujimori
IPC分类号： H01L33/08
CPC分类号： H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints.
摘要翻译：制造显示单元的方法包括：在衬底上形成具有氧化物半导体层的薄膜晶体管; 以及在所述薄膜晶体管的上方形成包括多个显示元件的显示区域。使用靶和衬底彼此相对的溅射法形成氧化物半导体层。目标由氧化物半导体制成，并且包括以平面形式接合的多个分割部分。由多个分割部分形成并且彼此并排的两个接合部之间的间隔间隔等于或小于在显示区域中基本正交的方向上出现的亮度分布的宽度到关节。

74. 发明授权

US08309956B2 Thin film transistor, display unit, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，显示单元和制造薄膜晶体管的方法
公开(公告)号：US08309956B2
公开(公告)日：2012-11-13
申请号：US12629283
申请日：2009-12-02
申请人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga
发明人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga
IPC分类号： H01L29/10 , H01L29/12 , H01L29/08 , H01L35/24 , H01L51/00 , H01L31/102
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3262
摘要： A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material.
摘要翻译：薄膜晶体管包括：栅电极; 形成在栅电极上的栅极绝缘膜; 形成与栅极绝缘膜上的栅电极对应的沟道区域的氧化物半导体薄膜层; 至少形成在与栅极绝缘膜和氧化物半导体薄膜层上的沟道区域对应的区域中的沟道保护层，其包括下层侧的第一沟道保护层和第二沟道保护层上层侧以及源极/漏极，其形成在沟道保护层上并与氧化物半导体薄膜层电连接。第一沟道保护层由氧化物绝缘材料制成，第一沟道保护层和第二沟道保护层中的一个或两个由低透氧材料制成。

75. 发明申请

US20120256182A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT 审中-公开
标题翻译：制造薄膜晶体管，薄膜晶体管和显示单元的方法
公开(公告)号：US20120256182A1
公开(公告)日：2012-10-11
申请号：US13529550
申请日：2012-06-21
申请人： Toshiaki Arai , Yoshio Inagaki
发明人： Toshiaki Arai , Yoshio Inagaki
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/78678
摘要： A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment.
摘要翻译：一种薄膜晶体管，其具有通过用光束照射非晶硅膜通过光热转换层和绝缘膜形成的晶体硅膜，以提供非晶硅膜的热处理。

76. 发明申请

US20120249503A1 DISPLAY AND ELECTRONIC DEVICE 审中-公开
标题翻译：显示和电子设备
公开(公告)号：US20120249503A1
公开(公告)日：2012-10-04
申请号：US13413057
申请日：2012-03-06
申请人： Shinichi Teraguchi , Keisuke Omoto , Hirohisa Koriyama , Yoko Fukunaga , Toshiaki Arai , Kazuyuki Endou
发明人： Shinichi Teraguchi , Keisuke Omoto , Hirohisa Koriyama , Yoko Fukunaga , Toshiaki Arai , Kazuyuki Endou
IPC分类号： G09G3/04 , G09G3/30 , G09G3/36 , G09G5/00
CPC分类号： H01L27/322 , G02F1/133514 , G02F2001/136218 , G09G3/3233 , G09G3/3648 , G09G2300/0426 , G09G2300/043 , G09G2320/0233 , G09G2320/0242 , G09G2330/06 , H01L27/3244
摘要： A display capable of reducing an electric effect of a color filter on a pixel circuit, and thereby suppressing degradation in display quality is provided. The display includes a pixel drive substrate having a color filter, a display function layer provided on the pixel drive substrate, a first electrode and a second electrode to supply a drive voltage to the display function layer, and a third electrode disposed to face the color filter.
摘要翻译：提供了能够降低像素电路上的滤色器的电效应，从而抑制显示质量下降的显示器。显示器包括具有滤色器的像素驱动基板，设置在像素驱动基板上的显示功能层，向显示功能层提供驱动电压的第一电极和第二电极以及面向颜色的第三电极过滤。

77. 发明申请

US20120205657A1 METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD 失效
标题翻译：用于制造通过该方法获得的半导体器件和半导体器件的方法，用于制造薄膜晶体管衬底和薄膜晶体管衬底的方法，以及用于制造由该方法获得的显示器件和显示器件的方法
公开(公告)号：US20120205657A1
公开(公告)日：2012-08-16
申请号：US13454141
申请日：2012-04-24
申请人： Naoki Hayashi , Toshiaki Arai
发明人： Naoki Hayashi , Toshiaki Arai
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , H01L27/1285 , H01L27/3244 , H01L29/4908
摘要： A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.
摘要翻译：具有形成在基板上的基板和层叠结构的半导体装置，所述层叠结构包括由金属氧化物构成的绝缘膜和半导体薄膜，所述绝缘膜和所述半导体薄膜都被结晶化。

78. 发明授权

US08233173B2 Computer readable medium for image processing, image processing method, image processing device, and image processing system 有权
标题翻译：用于图像处理的计算机可读介质，图像处理方法，图像处理装置和图像处理系统
公开(公告)号：US08233173B2
公开(公告)日：2012-07-31
申请号：US11485385
申请日：2006-07-13
申请人： Toshiaki Arai , Masafumi Ono , Kazuko Kirihara
发明人： Toshiaki Arai , Masafumi Ono , Kazuko Kirihara
IPC分类号： G06F3/12
CPC分类号： G06K15/00 , H04N2201/3202
摘要： There is provided a computer readable medium storing a program causing a computer to execute a function for an image processing. The function comprises: executing a job; creating a log image from an image handled in the job; setting a creation guarantee level of the log image; and controlling the execution of the job to be completed after the log image is created, if the creation guarantee level is set to a high level.
摘要翻译：提供了一种计算机可读介质，其存储使计算机执行用于图像处理的功能的程序。该功能包括：执行作业; 从作业中处理的图像创建日志图像; 设置日志图像的创建保证级别; 并且在创建日志图像之后控制要完成的作业的执行，如果创建保证级别被设置为高级别。

79. 发明授权

US08222647B2 Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method 失效
标题翻译：通过该方法获得的制造半导体装置和半导体装置的方法，制造薄膜晶体管基板和薄膜晶体管基板的方法，以及通过该方法获得的制造显示装置和显示装置的方法
公开(公告)号：US08222647B2
公开(公告)日：2012-07-17
申请号：US13094381
申请日：2011-04-26
申请人： Naoki Hayashi , Toshiaki Arai
发明人： Naoki Hayashi , Toshiaki Arai
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , H01L27/1285 , H01L27/3244 , H01L29/4908
摘要： A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.
摘要翻译：具有形成在基板上的基板和层叠结构的半导体装置，所述层叠结构包括由金属氧化物构成的绝缘膜和半导体薄膜，所述绝缘膜和所述半导体薄膜都被结晶化。

80. 发明申请

US20120030504A1 HIGH RELIABILITY COMPUTER SYSTEM AND ITS CONFIGURATION METHOD 审中-公开
标题翻译：高可靠性计算机系统及其配置方法
公开(公告)号：US20120030504A1
公开(公告)日：2012-02-02
申请号：US13201579
申请日：2009-11-05
申请人： Hiroyasu Nishiyama , Tomoya Ohta , Daisuke Yokota , Ken Nomura , Toshiaki Arai
发明人： Hiroyasu Nishiyama , Tomoya Ohta , Daisuke Yokota , Ken Nomura , Toshiaki Arai
IPC分类号： G06F11/20
CPC分类号： G06F11/2097 , G06F11/2038 , G06F11/2046
摘要： [Object]To increase the speed of copy processing from an online computer 101 to a standby computer 102. [Solution]When copying copy target information from the online computer 101 to the standby computer 102, a status copy processing unit 110: recognizes, as a synchronous point, a point in time when execution of a first application (AP #1), from among applications 108, is completed; extracts only information stored in a use area 401 of an OS 106 and a use area 403 of a second application (AP #2) from a storage area 400 of a memory at this synchronous point; and transfers the extracted information, as the copy target information necessary to continue the processing, from the online computer 101 to the standby computer 102. [Selected Drawing] FIG. 1
摘要翻译： [对象]提高从在线计算机101到备用计算机102的复制处理速度。[解决方案]当将来自在线计算机101的复制目标信息复制到备用计算机102时，状态复制处理单元110识别为从应用108中完成第一应用（AP＃1）的执行的时间点的同步点; 从该同步点的存储器的存储区域400中仅提取存储在OS 106的使用区域401中的信息和第二应用（AP＃2）的使用区域403; 并将提取的信息作为继续处理所需的复制目标信息从在线计算机101传送到备用计算机102。 1

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