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71. 发明授权

US07763898B2 Light emitting device having high optical output efficiency 有权
标题翻译：具有高光输出效率的发光器件
公开(公告)号：US07763898B2
公开(公告)日：2010-07-27
申请号：US11589297
申请日：2006-10-30
申请人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
发明人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
IPC分类号： H01L27/15 , H01L29/18 , H01L31/12 , H01L33/00
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.
摘要翻译：发光器件包括第一导电类型的下半导体层; 形成在所述下半导体层上的光发射层; 与所述第一导电类型相反的第二导电类型的上半导体层，所述上半导体层形成在所述光发射层上; 电连接到所述下半导体层的下侧电极; 电连接到所述上半导体层的上侧电极，其中所述上侧电极形成在所述上半导体层上，并且所述上半导体层具有限定由所述上侧电极围绕的多个部分的网格图案，并且其中至少一个凹痕设置在所述部分中的至少一个中，所述凹陷具有到达所述下半导体层的至少上表面的底部，并且具有开口，所述开口具有与所述上侧电极间隔开的上边缘。

72. 发明申请

US20090245099A1 REPEATER AND COMMUNICATION METHOD 有权
标题翻译：重复和通信方法
公开(公告)号：US20090245099A1
公开(公告)日：2009-10-01
申请号：US12404014
申请日：2009-03-13
申请人： MASAHIKO TSUCHIYA
发明人： MASAHIKO TSUCHIYA
IPC分类号： G06F11/00
CPC分类号： H04L45/28 , H04L45/02 , H04L45/026
摘要： A repeater for sending and receiving a routing message for changing routing information determines whether a routing message received from a first adjacent repeater which is disposed adjacent to the repeater is to be sent or not. If it is judged that the routing message is not to be sent, then the repeater generates a pseudo-routing message and sends the generated pseudo-routing message, instead of the routing message received from the first adjacent repeater, to a second adjacent repeater which is disposed adjacent to the repeater.
摘要翻译：用于发送和接收用于改变路由信息的路由消息的中继器确定是否要发送与邻接中继器设置的从第一相邻中继器接收的路由消息。如果判断为不发送路由消息，则中继器产生伪路由消息，并将所生成的伪路由消息（而不是从第一相邻中继器接收的路由消息）发送到第二相邻中继器设置在中继器附近。

73. 发明申请

US20070131941A1 Light emitting device having high optical output efficiency 有权
标题翻译：具有高光输出效率的发光器件
公开(公告)号：US20070131941A1
公开(公告)日：2007-06-14
申请号：US11589297
申请日：2006-10-30
申请人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
发明人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.
摘要翻译：发光器件包括第一导电类型的下半导体层; 形成在所述下半导体层上的光发射层; 与所述第一导电类型相反的第二导电类型的上半导体层，所述上半导体层形成在所述光发射层上; 电连接到所述下半导体层的下侧电极; 电连接到所述上半导体层的上侧电极，其中所述上侧电极形成在所述上半导体层上，并且所述上半导体层具有限定由所述上侧电极围绕的多个部分的网格图案，并且其中至少一个凹痕设置在所述部分中的至少一个中，所述凹陷具有到达所述下半导体层的至少上表面的底部，并且具有开口，所述开口具有与所述上侧电极间隔开的上边缘。

74. 发明授权

US07193247B2 Gallium nitride compound semiconductor device 有权
标题翻译：氮化镓化合物半导体器件
公开(公告)号：US07193247B2
公开(公告)日：2007-03-20
申请号：US11276653
申请日：2006-03-09
申请人： Masahiko Tsuchiya , Naochika Horio , Kenichi Morikawa
发明人： Masahiko Tsuchiya , Naochika Horio , Kenichi Morikawa
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/007 , H01L33/0095 , H01L2224/14
摘要： A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.
摘要翻译： GaN化合物半导体器件能够具有自由工艺设计并具有最佳的器件特性。该装置可以包括包括n型GaN化合物半导体层和p型GaN化合物半导体层的III族氮化物化合物半导体层叠结构。可以在n型GaN化合物半导体层上形成n电极，并且可以在p型GaN化合物半导体层上形成p电极。 n电极优选包括与n型GaN化合物半导体层接触的1〜10nm的Al层，以及形成在Al层上的任何Rh，Ir，Pt和Pd的金属层。 p电极可以由与p型GaN接触的Pd，Pt，Rh，Pt / Rh，Pt / Ag，Rh / Ag，Pd / Rh或Pd / Ag的200nm或更少的层制成化合物半导体层。两个电极都可以与相应的n型/ p型GaN半导体进行欧姆接触，而不需要主动退火。

75. 发明授权

US07141825B2 Semiconductor light emitting device capable of suppressing silver migration of reflection film made of silver 有权
标题翻译：能够抑制由银制成的反射膜的银迁移的半导体发光元件
公开(公告)号：US07141825B2
公开(公告)日：2006-11-28
申请号：US10968761
申请日：2004-10-19
申请人： Naochika Horio , Masahiko Tsuchiya , Hitoshi Tamura
发明人： Naochika Horio , Masahiko Tsuchiya , Hitoshi Tamura
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , H01L33/46 , H01L2224/02166 , H01L2224/0603 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed to expose the first layer in a first area which is a partial surface of the first layer. A p-side electrode is disposed on a surface of the second layer and electrically connected to the second layer. An insulating film covers the p-side electrode. An n-side electrode electrically connected to the first layer is disposed in the first area. A reflection film disposed on the insulating film extends to the n-side electrode and electrically connected to the n-side electrode. The reflection film is made of silver containing alloy or silver.
摘要翻译：发光层压结构包括由n型氮化物半导体制成的第一层和由p型氮化物半导体制成的第二层，并且设置在第一层上，其中在第一层和第二层之间限定发光区域。去除第二层以在作为第一层的部分表面的第一区域中露出第一层。 p侧电极设置在第二层的表面上并电连接到第二层。绝缘膜覆盖p侧电极。电连接到第一层的n侧电极设置在第一区域中。设置在绝缘膜上的反射膜延伸到n侧电极并与n侧电极电连接。反射膜由含银合金或银制成。

76. 发明授权

US07049160B2 Gallium nitride compound semiconductor device and method of manufacturing the same 有权
标题翻译：氮化镓化合物半导体器件及其制造方法
公开(公告)号：US07049160B2
公开(公告)日：2006-05-23
申请号：US10940690
申请日：2004-09-15
申请人： Masahiko Tsuchiya , Naochika Horio , Kenichi Morikawa
发明人： Masahiko Tsuchiya , Naochika Horio , Kenichi Morikawa
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/007 , H01L33/0095 , H01L2224/14
摘要： A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.
摘要翻译： GaN化合物半导体器件能够具有自由工艺设计并具有最佳的器件特性。该装置可以包括包括n型GaN化合物半导体层和p型GaN化合物半导体层的III族氮化物化合物半导体层叠结构。可以在n型GaN化合物半导体层上形成n电极，并且可以在p型GaN化合物半导体层上形成p电极。 n电极优选包括与n型GaN化合物半导体层接触的1〜10nm的Al层，以及形成在Al层上的任何Rh，Ir，Pt和Pd的金属层。 p电极可以由与p型GaN接触的Pd，Pt，Rh，Pt / Rh，Pt / Ag，Rh / Ag，Pd / Rh或Pd / Ag的200nm或更少的层制成化合物半导体层。两个电极都可以与相应的n型/ p型GaN半导体进行欧姆接触，而不需要主动退火。

77. 发明申请

US20060044253A1 Power supply circuit, driving device, electro-optic device, electronic apparatus, and method of supplying driving-voltages 失效
公开(公告)号：US20060044253A1
公开(公告)日：2006-03-02
申请号：US11211372
申请日：2005-08-25
申请人： Masahiko Tsuchiya
发明人： Masahiko Tsuchiya
IPC分类号： G09G3/36
CPC分类号： G09G3/3625 , G09G3/2014 , G09G3/3696 , G09G2310/0208
摘要： A power supply circuit which generates driving voltages for an electro-optic device having a plurality of common electrodes and a plurality of segment electrodes with the use of multi-line driving in which four lines of common electrodes are simultaneously selected. The driving voltages are first through seventh driving voltages in which an i-th (2≦i≦5, and i is an integer) driving voltage is higher than an (i+1)th driving voltage. The power supply circuit includes: a common electrode driving-voltage generator circuit which generates the first and seventh driving voltages used for selection of the common electrodes at a positive side and a negative side on the basis of the fourth driving voltage; and a segment electrode driving-voltage generator circuit which generates the fourth driving voltage, the second and third driving voltages used for the segment electrodes at the positive side on the basis of the fourth driving voltage, and the fifth and the sixth driving voltages used for the segment electrodes at the negative side on the basis of the fourth driving voltage. The segment electrode driving-voltage generator circuit changes and outputs output potentials of only the third and fifth driving voltages from among the second through sixth driving voltages, while a voltage difference between the third and fourth driving voltages is kept equal to a voltage difference between the fourth and the fifth driving voltages.

78. 发明授权

US06888397B2 Temperature sensor circuit, semiconductor integrated circuit, and method of adjusting the temperature sensor circuit 有权
标题翻译：温度传感器电路，半导体集成电路及温度传感器电路调整方法
公开(公告)号：US06888397B2
公开(公告)日：2005-05-03
申请号：US10636310
申请日：2003-08-06
申请人： Masahiko Tsuchiya
发明人： Masahiko Tsuchiya
IPC分类号： H01L21/66 , G01K7/01 , H01L21/822 , H01L27/04 , H03M1/12 , H01L35/00
CPC分类号： G01K7/01 , G01K2219/00
摘要： A temperature sensor circuit which includes: an adjustment circuit which generates a first divided voltage obtained by dividing a reference voltage; a current generation circuit which has a transistor element and generates a current corresponding to a gate voltage of the transistor element, the first divided voltage being supplied to a gate terminal of the transistor element; a voltage generation circuit which includes a diode element to which the current is supplied, an analog voltage being generated between both ends of the diode element; and an analog/digital (A/D) conversion circuit which compares a second divided voltage obtained by dividing the reference voltage with the analog voltage and converts the analog voltage into a digital value.
摘要翻译：一种温度传感器电路，包括：调整电路，其生成通过划分参考电压而获得的第一分压; 电流产生电路，其具有晶体管元件并产生与晶体管元件的栅极电压相对应的电流，第一分压被提供给晶体管元件的栅极端子; 电压产生电路，其包括供给所述电流的二极管元件，在所述二极管元件的两端之间产生模拟电压; 以及模拟/数字（A / D）转换电路，其将通过将参考电压除以所获得的第二分压与模拟电压进行比较，并将模拟电压转换为数字值。

79. 发明授权

US06875068B2 Cover structure for a shaft coupling of a personal watercraft 失效
标题翻译：个人船舶联轴器的盖结构
公开(公告)号：US06875068B2
公开(公告)日：2005-04-05
申请号：US10660105
申请日：2003-09-11
申请人： Tomohiro Fuse , Hisashi Matsuo , Masahiko Tsuchiya
发明人： Tomohiro Fuse , Hisashi Matsuo , Masahiko Tsuchiya
IPC分类号： B63H11/08 , B63B35/73 , B63H23/32 , F16D3/84 , B63H23/34
CPC分类号： B63H23/32 , B63H2023/342 , F16D3/841
摘要： In a personal watercraft with an engine 17 disposed at a central portion of a craft body and a water jet propeller 18 disposed at a stern of the watercraft, a propeller shaft 33 of the water jet propeller is connected to an end 31 of a crankshaft of the engine by a shaft coupling 32. The shaft coupling as well as the ends of the crankshaft and propeller shaft are covered from the top and from both sides with a cover apparatus 22, including a first cover section 35 for removable attachment to the engine or the hull, and a second cover section section 36 for removable attachment to the first cover section. When the cover is removed, it only of the second cover section section, and even if the space for working is small, not much time is required for removal and re-attachment thereof.
摘要翻译：在具有设置在船体的中心部分处的发动机17和设置在船舶尾部的喷水推进器18的个人船舶中，喷水推进器的传动轴33连接到曲轴的曲轴的端部31 该联轴器以及曲轴和传动轴的端部由顶盖和两侧用盖装置22覆盖，该盖装置包括用于可拆卸地附接到发动机的第一盖部分35，船体，以及用于可拆卸地附接到第一盖部分的第二盖部分36。当盖子被移除时，仅仅是第二盖部分部分，即使工作空间小，也不需要太多时间去除和重新附接。

80. 发明授权

US06699084B2 Drive shaft bearing structure for boat 失效
标题翻译：驱动轴轴承结构船
公开(公告)号：US06699084B2
公开(公告)日：2004-03-02
申请号：US10219660
申请日：2002-08-16
申请人： Tomohiro Fuse , Masahiko Tsuchiya
发明人： Tomohiro Fuse , Masahiko Tsuchiya
IPC分类号： B63H2334
CPC分类号： F16C19/54 , B63H11/08 , B63H23/321 , B63H23/36 , B63H2011/081 , B63H2023/327 , F16C33/6607 , F16C33/6622 , F16C33/76 , F16C35/061 , F16C2326/30
摘要： A bearing member for rotatably supporting a drive shaft for driving an impeller on a boat body configured to prevent wearing of an outside circumferential surface of a drive shaft and/or an inside circumferential surface of an inner lace. An inner lace makes contact with an outside circumferential surface of the drive shaft, and an outer lace is disposed on the outside of the inner lace with a rotary body dsiposed therebetween. A connecting member for rotating both the drive shaft and the inner lace is provided between the outside circumferential surface of the drive shaft and the inner lace. The connecting member is a ring-shaped elastic body pressed against the outside circumferential surface of the drive shaft and a side surface of the inner lace. Two bearing members are provided at an interval therebetween, and the connecting member is disposed between the bearing members.
摘要翻译：一种用于可旋转地支撑用于驱动船体上的叶轮的驱动轴的轴承构件，其构造成防止驱动轴的外周面和/或内花边的内周面的磨损。内部花边与驱动轴的外周表面接触，并且外花边设置在内花边的外侧，旋转体在其间分开。在驱动轴的外周表面和内花边之间设置用于使驱动轴和内花边旋转的连接构件。连接构件是压靠在驱动轴的外周面和内花边的侧面的环状弹性体。两个轴承部件间隔设置，连接部件配置在轴承部件之间。

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