专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080145961A1 Semiconductor Light Emitting Device and Manufacturing Method Thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080145961A1
公开(公告)日：2008-06-19
申请号：US12031068
申请日：2008-02-14
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

2. 发明授权

US07595206B2 Manufacturing method for semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US07595206B2
公开(公告)日：2009-09-29
申请号：US12031068
申请日：2008-02-14
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

3. 发明申请

US20050281303A1 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050281303A1
公开(公告)日：2005-12-22
申请号：US11154814
申请日：2005-06-17
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L33/26 , H01L33/40 , H01L33/62 , H01S5/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

4. 发明授权

US07411220B2 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07411220B2
公开(公告)日：2008-08-12
申请号：US11154814
申请日：2005-06-17
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L29/26
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

5. 发明授权

US07763898B2 Light emitting device having high optical output efficiency 有权
标题翻译：具有高光输出效率的发光器件
公开(公告)号：US07763898B2
公开(公告)日：2010-07-27
申请号：US11589297
申请日：2006-10-30
申请人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
发明人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
IPC分类号： H01L27/15 , H01L29/18 , H01L31/12 , H01L33/00
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.
摘要翻译：发光器件包括第一导电类型的下半导体层; 形成在所述下半导体层上的光发射层; 与所述第一导电类型相反的第二导电类型的上半导体层，所述上半导体层形成在所述光发射层上; 电连接到所述下半导体层的下侧电极; 电连接到所述上半导体层的上侧电极，其中所述上侧电极形成在所述上半导体层上，并且所述上半导体层具有限定由所述上侧电极围绕的多个部分的网格图案，并且其中至少一个凹痕设置在所述部分中的至少一个中，所述凹陷具有到达所述下半导体层的至少上表面的底部，并且具有开口，所述开口具有与所述上侧电极间隔开的上边缘。

6. 发明申请

US20070131941A1 Light emitting device having high optical output efficiency 有权
标题翻译：具有高光输出效率的发光器件
公开(公告)号：US20070131941A1
公开(公告)日：2007-06-14
申请号：US11589297
申请日：2006-10-30
申请人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
发明人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.
摘要翻译：发光器件包括第一导电类型的下半导体层; 形成在所述下半导体层上的光发射层; 与所述第一导电类型相反的第二导电类型的上半导体层，所述上半导体层形成在所述光发射层上; 电连接到所述下半导体层的下侧电极; 电连接到所述上半导体层的上侧电极，其中所述上侧电极形成在所述上半导体层上，并且所述上半导体层具有限定由所述上侧电极围绕的多个部分的网格图案，并且其中至少一个凹痕设置在所述部分中的至少一个中，所述凹陷具有到达所述下半导体层的至少上表面的底部，并且具有开口，所述开口具有与所述上侧电极间隔开的上边缘。

7. 发明授权

US10394311B2 Apparatus and method for information processing 有权
公开(公告)号：US10394311B2
公开(公告)日：2019-08-27
申请号：US15481853
申请日：2017-04-07
申请人： Satoshi Tanaka
发明人： Satoshi Tanaka
IPC分类号： G06F1/324 , G06F1/3293 , G03G15/00 , G06F1/12 , G06F1/3206 , G06F1/3287 , G06F3/12 , G06F9/4401 , G06F9/46 , G06F1/3234 , G06F1/3203
摘要： An information processing apparatus includes a first processor and a second processor. The first processor is operable to perform first processing and second processing in one of a plurality of operating states. The operating states includes a normal state and a power-saving state. The power-saving state is a state in which the first processor consumes less power than the normal state. The second processor is operable to perform the second processing while consuming less power than the first processor does. The second processor detects the first processing that the second processor is not able to perform. The second processor also causes the first processor to transition from the sleep state to the power-saving state to perform the first processing when the first processor is in a sleep state in which a power supply is stopped.

8. 发明授权

US09714408B2 Cell culture method 有权
公开(公告)号：US09714408B2
公开(公告)日：2017-07-25
申请号：US12450480
申请日：2008-04-24
申请人： Satoshi Tanaka , Yoichi Ishizaki , Ryo Suenaga , Yoriko Tokita , Masahito Kogure
发明人： Satoshi Tanaka , Yoichi Ishizaki , Ryo Suenaga , Yoriko Tokita , Masahito Kogure
IPC分类号： C12N5/02 , C12M1/34 , C12M1/00 , C12M1/06 , C12M1/26
CPC分类号： C12M41/32 , C12M23/14 , C12M23/26 , C12M27/02 , C12M29/26 , C12M33/18 , C12M41/26 , C12M41/44
摘要： In a cell culture in a sealed cell culture container, gradual deterioration of culture environment is prevented. A cell culture method in which cell culture is conducted by adding a fresh culture medium to a culture container in which cells and a culture medium are enclosed, which includes the steps ofadjusting the pH of said culture medium to be added to be higher than the pH which is optimum for culture of the cells, and/or adjusting the partial pressure of dissolved carbon dioxide of the culture medium to be added to be lower than the pressure which is optimum for culture of the cells, and/or adjusting the partial pressure of dissolved oxygen of the culture medium to be added to be higher than the pressure which is optimum for culture of the cells; and mixing the adjusted culture medium and the culture medium in said culture-container to adjust at least any of the pH, the partial pressure of dissolved carbon dioxide and the partial pressure of dissolved oxygen to be optimum for culture of said cells, thereby to culture the cells in the culture container.

9. 发明授权

US09603114B2 Communication apparatus 有权
公开(公告)号：US09603114B2
公开(公告)日：2017-03-21
申请号：US14037599
申请日：2013-09-26
申请人： Satoshi Tanaka
发明人： Satoshi Tanaka
IPC分类号： H04W4/00 , H04B5/00 , H04B7/00 , H04W60/00 , H04W48/18 , H04W8/00 , H04W84/12 , H04W88/06 , H04W12/04
CPC分类号： H04W48/18 , H04W4/80 , H04W8/005 , H04W12/04 , H04W48/08 , H04W60/00 , H04W84/12 , H04W88/06
摘要： A first communication apparatus may receive first identification information for identifying a first wireless network and second identification information for identifying a second wireless network via a first type of interface from a second communication apparatus, in a case where the second communication apparatus currently belongs to both the first wireless network and the second wireless network. The first communication apparatus may select, from among the first and second wireless networks, by using the first and the second identification information, at least one wireless network to which the first communication apparatus currently belongs, and execute a wireless communication for target data with the second communication apparatus via a second type of interface by using a target wireless network included in the selected at least one wireless network.

10. 发明授权

US09388376B2 Method for counting subject matters to be counted in container 有权
标题翻译：计算容器中计数的事项的方法
公开(公告)号：US09388376B2
公开(公告)日：2016-07-12
申请号：US14023575
申请日：2013-09-11
申请人： Ryo Suenaga , Yoichi Ishizaki , Satoshi Tanaka , Takahiko Totani , Kyohei Ota
发明人： Ryo Suenaga , Yoichi Ishizaki , Satoshi Tanaka , Takahiko Totani , Kyohei Ota
IPC分类号： C12M1/34 , C12M1/26 , C12M1/00 , C12M1/06
CPC分类号： C12M41/40 , C12M23/14 , C12M23/34 , C12M27/02 , C12M33/18 , C12M41/36
摘要： A method for counting counted targets disposed in a liquid enclosed in a container, includes adjusting a thickness of at least a part of the container; setting at least a part of the adjusted part as a measurement target region; and counting a number of counted targets in the measurement target region.
摘要翻译：一种用于计数设置在容纳在容器中的液体中的计数目标的方法，包括调节容器的至少一部分的厚度; 将所述经调整部分的至少一部分设定为测量对象区域; 并计数测量目标区域中的多个计数目标。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式