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71. 发明授权

US06573127B2 Thin-film transistor and method of making same 有权
公开(公告)号：US06573127B2
公开(公告)日：2003-06-03
申请号：US09983629
申请日：2001-10-25
申请人： Hyun-Sik Seo
发明人： Hyun-Sik Seo
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/42384 , H01L29/4908 , Y10S438/937
摘要： A thin-film transistor includes a substrate and a gate including a double-layered structure-having first metal layer formed of a material exhibiting tensile stress and second metal layer formed of a metal exhibiting compressive stress, the first metal layer being wider than the second metal layer by about 1 to 4 &mgr;m. A method of making such a thin film transistor includes the steps of: depositing a first metal layer comprising a material exhibiting tensile stress on a substrate, depositing a second metal layer exhibiting compressive stress on the first metal layer; patterning the second metal layer and the first metal layer such that the first metal layer is wider than the second metal layer.

72. 发明授权

US5742365A Liquid crystal display device and method for manufacturing the same in which a light shielding layer is over the gate electrode or a gate electrode is in a trench 失效
标题翻译：液晶显示装置及其制造方法，其中遮光层在栅电极或栅电极之上处于沟槽中
公开(公告)号：US5742365A
公开(公告)日：1998-04-21
申请号：US783060
申请日：1997-01-14
申请人： Hyun Sik Seo
发明人： Hyun Sik Seo
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/786 , G02F1/136 , H01L29/04 , H01L27/108
CPC分类号： H01L27/1214 , G02F1/1368 , H01L29/4908 , H01L29/66765 , H01L29/78633 , G02F1/133512 , G02F1/136209 , G02F1/136286 , H01L27/1262
摘要： A liquid crystal display device includes a substrate, a gate electrode on the substrate, a light shielding layer over the gate electrode and the substrate, an insulating layer over the light shielding layer and the substrate, a semiconductor layer having a channel region on the insulating layer over the gate electrode, source and drain electrodes over first and second portions of the semiconductor layer, respectively, and an ohmic contact layer between the semiconductor layer and each of the source and drain electrodes.
摘要翻译：一种液晶显示装置，包括基板，基板上的栅电极，栅电极和基板上的遮光层，遮光层和基板上的绝缘层，在绝缘体上具有沟道区的半导体层分别在半导体层的第一和第二部分上方的栅电极，源电极和漏极上的层，以及半导体层与源电极和漏电极中的每一个之间的欧姆接触层。

73. 发明授权

US08699117B2 Electrophoresis type display device and method of fabricating and driving the same 有权
标题翻译：电泳型显示装置及其制造和驱动方法
公开(公告)号：US08699117B2
公开(公告)日：2014-04-15
申请号：US12656818
申请日：2010-02-17
申请人： Hyun-Sik Seo , Chang-Dong Kim , Seung-Han Paek , Dae-Hyun Nam
发明人： Hyun-Sik Seo , Chang-Dong Kim , Seung-Han Paek , Dae-Hyun Nam
IPC分类号： G02B26/00 , G02B26/08 , G02F1/29
CPC分类号： G02F1/167 , G02F1/134363 , G02F2001/1676 , G02F2201/124
摘要： Provided is a electrophoresis type display device includes a pixel electrode and a common electrode on a substrate and inducing an in-plane electric field; an electric charge layer on the pixel electrode and common electrode and having a plurality of first particles and a plurality of second particles, the first and second particles charged with opposite polarities; and a backlight unit supplying light toward the substrate.
摘要翻译：提供一种电泳型显示装置，其在基板上包括像素电极和公共电极，并且产生面内电场; 所述像素电极和公共电极上的电荷层具有多个第一粒子和多个第二粒子，所述第一粒子和第二粒子具有相反的极性; 以及向基板供给光的背光单元。

74. 发明授权

US08558225B2 Oxide thin film transistor having source and drain electrodes being formed between a primary and a secondary active layers 有权
标题翻译：具有源极和漏极的氧化物薄膜晶体管形成在初级和次级有源层之间
公开(公告)号：US08558225B2
公开(公告)日：2013-10-15
申请号：US13243584
申请日：2011-09-23
申请人： Jong-Uk Bae , Hyun-Sik Seo , Yong-Yub Kim
发明人： Jong-Uk Bae , Hyun-Sik Seo , Yong-Yub Kim
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , G02F1/1368 , G02F2001/136295 , H01L27/1225 , H01L27/3262 , H01L29/7869
摘要： A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.
摘要翻译：液晶显示（LCD）装置的制造方法包括：在基板上形成栅电极; 在所述基板上形成栅极绝缘层; 在所述栅极绝缘层上形成具有锥形部分的主要有源层至所述主要有源层的沟道区域侧，以及在所述主要有源层上形成源极和漏极; 以及在所述源电极和漏电极上形成由非晶形氧化锌基半导体制成的二次有源层，并与所述主有源层的所述锥形部分接触，其中所述主有源层在湿蚀刻期间以低选择性被蚀刻源电极和漏电极具有锥形部分。

75. 发明授权

US08497147B2 Array substrate and method of fabricating the same 有权
标题翻译：阵列基板及其制造方法
公开(公告)号：US08497147B2
公开(公告)日：2013-07-30
申请号：US13115733
申请日：2011-05-25
申请人： Chang-Il Ryoo , Hyun-Sik Seo , Jong-Uk Bae
发明人： Chang-Il Ryoo , Hyun-Sik Seo , Jong-Uk Bae
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L27/1248 , H01L27/127 , H01L29/66969 , H01L29/7869
摘要： A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer and an etch prevention layer on the gate insulating layer using a single mask, forming source and drain electrodes on the etch prevention layer, and forming a passivation layer including a contact hole on the source and drain electrodes and on the gate insulating layer, and forming a pixel electrode on the passivation layer and through the contact hole.
摘要翻译：讨论了制造阵列基板的方法和包括阵列基板的显示装置。根据实施例，该方法包括在衬底上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成氧化物半导体层和防蚀层，使用单个掩模，形成源极和漏极在所述蚀刻防止层上形成电极，以及在所述源极和漏极以及所述栅极绝缘层上形成包括接触孔的钝化层，以及在所述钝化层上并通过所述接触孔形成像素电极。

76. 发明授权

US08071974B2 Organic thin film transistor including organic insulating layer and substrate including the same 有权
标题翻译：包括有机绝缘层的有机薄膜晶体管和包括其的衬底
公开(公告)号：US08071974B2
公开(公告)日：2011-12-06
申请号：US11153292
申请日：2005-06-15
申请人： Hyun-Sik Seo , Nack-Bong Choi
发明人： Hyun-Sik Seo , Nack-Bong Choi
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/052 , H01L51/0545
摘要： An organic thin film transistor includes a gate electrode having a first thickness on a substrate; an organic insulating layer on the gate electrode and the substrate, a portion of the organic insulating layer on the substrate having a second thickness, and a portion of the organic insulating layer on the gate electrode having a third thickness of about 2000 Å to 5000 Å; a semiconductor layer on the organic insulating layer; and source and drain electrodes on the organic insulating layer and contacting both side portions of the semiconductor layer.
摘要翻译：有机薄膜晶体管包括在基板上具有第一厚度的栅电极; 在栅电极和衬底上的有机绝缘层，衬底上的有机绝缘层的具有第二厚度的部分，以及栅电极上的有机绝缘层的一部分具有约2000到5000的第三厚度 ; 有机绝缘层上的半导体层; 以及有机绝缘层上的源电极和漏电极，并接触半导体层的两侧部分。

77. 发明申请

US20110291096A1 ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：阵列基板及其制造方法
公开(公告)号：US20110291096A1
公开(公告)日：2011-12-01
申请号：US13115733
申请日：2011-05-25
申请人： Chang-Il RYOO , Hyun-Sik Seo , Jong-Uk Bae
发明人： Chang-Il RYOO , Hyun-Sik Seo , Jong-Uk Bae
IPC分类号： H01L33/02
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L27/1248 , H01L27/127 , H01L29/66969 , H01L29/7869
摘要： A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer and an etch prevention layer on the gate insulating layer using a single mask, forming source and drain electrodes on the etch prevention layer, and forming a passivation layer including a contact hole on the source and drain electrodes and on the gate insulating layer, and forming a pixel electrode on the passivation layer and through the contact hole.
摘要翻译：讨论了制造阵列基板的方法和包括阵列基板的显示装置。根据实施例，该方法包括在衬底上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成氧化物半导体层和防蚀层，使用单个掩模，形成源极和漏极在所述蚀刻防止层上形成电极，以及在所述源极和漏极以及所述栅极绝缘层上形成包括接触孔的钝化层，以及在所述钝化层上并通过所述接触孔形成像素电极。

78. 发明授权

US08058116B2 Method of fabricating an amorphous zinc-oxide based thin film transistor (TFT) including source/drain electrodes formed between two oxide semiconductor layers 有权
标题翻译：制造在两个氧化物半导体层之间形成的源极/漏极的无定形氧化锌基薄膜晶体管（TFT）的制造方法
公开(公告)号：US08058116B2
公开(公告)日：2011-11-15
申请号：US12618073
申请日：2009-11-13
申请人： Jong-Uk Bae , Hyun-Sik Seo , Yong-Yub Kim
发明人： Jong-Uk Bae , Hyun-Sik Seo , Yong-Yub Kim
IPC分类号： H01L21/20 , H01L29/786
CPC分类号： H01L29/78696 , G02F1/1368 , G02F2001/136295 , H01L27/1225 , H01L27/3262 , H01L29/7869
摘要： A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.
摘要翻译：液晶显示（LCD）装置的制造方法包括：在基板上形成栅电极; 在所述基板上形成栅极绝缘层; 在所述栅极绝缘层上形成具有锥形部分的主要有源层至所述主要有源层的沟道区域侧，以及在所述主要有源层上形成源极和漏极; 以及在所述源电极和漏电极上形成由非晶形氧化锌基半导体制成的二次有源层，并与所述主有源层的所述锥形部分接触，其中所述主有源层在湿蚀刻期间以低选择性被蚀刻源电极和漏电极具有锥形部分。

79. 发明申请

US20110223715A1 THIN FILM TRANSISTOR INCLUDING ORGANIC SEMICONDUCTOR LAYER AND SUBSTRATE INCLUDING THE SAME 有权
标题翻译：包括有机半导体层的薄膜晶体管和包括它的基板
公开(公告)号：US20110223715A1
公开(公告)日：2011-09-15
申请号：US13115477
申请日：2011-05-25
申请人： Hyun-Sik SEO , Nack-Bong CHOI
发明人： Hyun-Sik SEO , Nack-Bong CHOI
IPC分类号： H01L51/40
CPC分类号： H01L51/105 , H01L51/0011 , H01L51/0036 , H01L51/0052 , H01L51/0059 , H01L51/0516 , H01L51/0545
摘要： Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers.
摘要翻译：提供了一种薄膜晶体管，其包括在基板上的栅电极; 栅电极上的栅极绝缘层; 源电极和漏电极分别包括在栅极绝缘层上的第一源极和漏极层，并彼此间隔开，其中至少一个第一源极和漏极层包括掺杂有至少一个III族元素的铟锡氧化物 ; 以及栅极绝缘层上的有机半导体层，并与第一源极和漏极层接触。

80. 发明授权

US07816196B2 Laser mask and crystallization method using the same 有权
标题翻译：激光掩模和结晶法使用相同
公开(公告)号：US07816196B2
公开(公告)日：2010-10-19
申请号：US12495377
申请日：2009-06-30
申请人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
发明人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
IPC分类号： H01L21/84
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.
摘要翻译：激光结晶方法的一个实施例包括提供沉积非晶硅薄膜的衬底，将激光掩模定位在衬底上，激光掩模包括含有透射区域和阻挡区域的掩模图案，照射第一激光束通过激光掩模的图案在基板的表面上，首先使硅薄膜的预定区域结晶，使激光掩模或其上载置基板的载台沿X轴方向移动，以使用第二结晶激光掩模，在X轴方向上重复地向基板的端部进行结晶，使激光掩模或载物台沿Y轴方向移动，并且在Y轴方向上反复进行结晶以完成结晶。

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