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71. 发明申请

US20100084746A1 PROCESS FOR PRODUCING LAMINATED SUBSTRATE AND LAMINATED SUBSTRATE 有权
标题翻译：生产层压基板和层压基板的方法
公开(公告)号：US20100084746A1
公开(公告)日：2010-04-08
申请号：US12550340
申请日：2009-08-28
申请人： Shoji AKIYAMA , Atsuo ITO , Yoshihiro KUBOTA , Koichi TANAKA , Makoto KAWAI , Yuuji TOBISAKA
发明人： Shoji AKIYAMA , Atsuo ITO , Yoshihiro KUBOTA , Koichi TANAKA , Makoto KAWAI , Yuuji TOBISAKA
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/31051 , H01L21/76251 , H01L31/1892 , Y02E10/50
摘要： A method of manufacturing a laminated substrate is provided. The method includes: forming an oxide film on at least a surface of a first substrate having a hardness of equal to or more than 150 GPa in Young's modulus, and then smoothing the oxide film; implanting hydrogen ions or rare gas ions, or mixed gas ions thereof from a surface of a second substrate to form an ion-implanted layer inside the substrate, laminating the first substrate and the second substrate through at least the oxide film, and then detaching the second substrate in the ion-implanted layer to form a laminated substrate, heat-treating the laminated substrate and diffusing outwardly the oxide film.
摘要翻译：提供一种制造叠层基板的方法。该方法包括：在杨氏模量下，在硬度为150GPa以上的第一基板的至少表面形成氧化膜，然后平滑氧化膜; 从第二基板的表面注入氢离子或稀有气体离子或其混合气体离子以在基板内部形成离子注入层，至少通过氧化物膜层压第一基板和第二基板，然后将在离子注入层中形成第二衬底以形成层压衬底，对层压衬底进行热处理并向外扩散氧化膜。

72. 发明申请

US20100025804A1 SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译： SOI衬底和制造SOI衬底的方法
公开(公告)号：US20100025804A1
公开(公告)日：2010-02-04
申请号：US12158047
申请日：2006-11-01
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： H01L21/762 , H01L27/12
CPC分类号： H01L21/76254
摘要： On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.
摘要翻译：在单晶Si衬底的表面（接合面侧）侧，在表面附近以规定的深度（L）形成均匀的离子注入层。单晶Si衬底的表面和作为结合面的透明绝缘衬底的表面彼此紧密接触，并且通过在350℃或更低的温度下在该状态下加热衬底来进行接合。在该接合工艺之后，通过从外部施加冲击来破坏离子注入层中的Si-Si键，并且在等于规定深度（L）的位置上的晶体表面机械剥离单晶硅薄膜单晶Si衬底表面附近。

73. 发明授权

US07615456B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07615456B2
公开(公告)日：2009-11-10
申请号：US12076923
申请日：2008-03-25
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/76256 , H01L27/12
摘要： A method for manufacturing an SOI substrate superior in film thickness uniformity and resistivity uniformity in a substrate surface of a silicon layer having a film thickness reduced by an etch-back method is provided. After B ions is implanted into a front surface of a single-crystal Si substrate 10 to form a high-concentration boron added p layer 11 having a depth L in the outermost front surface, the single-crystal Si substrate 10 is appressed against a quartz substrate 20 to be bonded at a room temperature. Chemical etching is performed with respect to the single-crystal Si substrate 10 from a back surface thereof to set its thickness to L or below. A heat treatment is carried out with respect to an SOI substrate in a hydrogen containing atmosphere to outwardly diffuse B from the high-concentration boron added p layer 11, thereby acquiring a boron added p layer 12 having a desired resistance value. During this heat treatment, B in an Si crystal is diffused to the outside of the crystal in a state where it is coupled with hydrogen in the atmosphere, and a B concentration in the high-concentration boron added p layer 11 is reduced. In regard to a heat treatment temperature at this time, in view of a softening point of the insulative substrate, an upper limit of the heat treatment temperature is set to 1250° C., and 700° C. is selected as a lower limit of the temperature at which B can be diffused.
摘要翻译：提供一种制造SOI衬底的方法，该SOI衬底具有通过蚀刻方法减小的膜厚度的硅层的衬底表面中的膜厚均匀性和电阻率均匀性优异的SOI衬底。在将B离子注入到单晶Si衬底10的前表面中以形成在最外表面具有深度L的高浓度硼添加p层11之后，将单晶Si衬底10贴在石英基板20在室温下结合。从其背面对单晶硅基板10进行化学蚀刻，将其厚度设定为L以下。对含氢气氛中的SOI衬底进行热处理，从高浓度硼添加p层11向外扩散B，从而获得具有所需电阻值的添加硼的p层12。在该热处理中，Si结晶中的B在与大气中的氢相结合的状态下扩散到晶体外部，并且在高浓度硼添加p层11中的B浓度降低。就此时的热处理温度而言，考虑到绝缘基板的软化点，将热处理温度的上限设定为1250℃，选择700℃为下限值 B可以扩散的温度。

74. 发明申请

US20090111242A1 Method for producing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20090111242A1
公开(公告)日：2009-04-30
申请号：US12230984
申请日：2008-09-09
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： An object of the present invention is to provide a method by which bonding at a low temperature is possible and an amount of metal contaminants in an SOI film is decreased. An embodiment of the present invention is realized in the following manner. A single crystal silicon substrate 10 surface-activated by a plasma-treatment and a quartz substrate 20 are bonded together at a low temperature, to which an external impact is given to mechanically delaminate silicon film from a single crystal silicon bulk thereby obtaining a semiconductor substrate (SOI substrate) having a silicon film (SOI film) 12. Next, the SOI substrate is subjected to a heat-treatment at a temperature of 600° C. to 1250° C. so that metal impurities accidentally mixed into an interface of the SOI film and the quartz substrate and into the SOI film in such a step as a plasma-treatment are gettered to a surface region of the silicon film 12. Then, in the end, a surface layer (gettering layer) of the silicon film 12 of the SOI substrate after the heat-treatment is removed to finally prepare an SOI film 13 and a semiconductor substrate (SOI substrate) is obtained.
摘要翻译：本发明的目的是提供一种可以在低温下进行接合并降低SOI膜中的金属污染物的量的方法。以下述方式实现本发明的实施例。通过等离子体处理表面激活的单晶硅衬底10和石英衬底20在低温下被接合在一起，对其进行外部冲击以将硅膜从单晶硅体层剥离，从而获得半导体衬底（SOI衬底）12。接下来，将SOI衬底在600℃至1250℃的温度下进行热处理，使得金属杂质意外地混入到 SOI膜和石英衬底以及诸如等离子体处理的步骤中的SOI膜被吸收到硅膜12的表面区域。然后，最后，将硅膜12的表面层（吸气层）的SOI基板，最终制作SOI膜13，得到半导体基板（SOI基板）。

75. 发明申请

US20090061591A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090061591A1
公开(公告)日：2009-03-05
申请号：US12162134
申请日：2007-02-08
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A hydrogen ion-implanted layer is formed on the surface side of a first substrate which is a single-crystal silicon substrate. At least one of the surface of a second substrate, which is a transparent insulating substrate, and the surface of the first substrate is subjected to surface activation treatment, and the two substrates are bonded together. The bonded substrate composed of the single-crystal Si substrate and the transparent insulating substrate thus obtained is mounted on a susceptor and is placed under an infrared lamp. Light having a wave number range including an Si—H bond absorption band is irradiated at the bonded substrate for a predetermined length of time to break the Si—H bonds localized within a “microbubble layer” in the hydrogen ion-implanted layer, thereby separating a silicon thin film layer.
摘要翻译：在作为单晶硅衬底的第一衬底的表面侧上形成氢离子注入层。作为透明绝缘基板的第二基板的表面和第一基板的表面中的至少一个进行表面活化处理，并且将两个基板接合在一起。将由单晶Si衬底和由此获得的透明绝缘衬底构成的键合衬底安装在基座上并放置在红外灯下。在键合衬底上照射具有Si-H键吸收带的波数范围的光，以预定的时间长度，以破坏位于氢离子注入层中的“微泡层”内的Si-H键，从而分离硅薄膜层。

76. 发明申请

US20080251192A1 Method for manufacturing pyrolytic boron nitride composite substrate 有权
标题翻译：制造热解氮化硼复合基板的方法
公开(公告)号：US20080251192A1
公开(公告)日：2008-10-16
申请号：US12078276
申请日：2008-03-28
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , C23C14/48
摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理硅基板10，用于表面清洁或表面活化。经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从待转移的硅衬底的体积13。将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

77. 发明授权

US6090732A Zinc-doped tricalcium phosphate ceramic material 有权
标题翻译：掺锌磷酸三钙陶瓷材料
公开(公告)号：US6090732A
公开(公告)日：2000-07-18
申请号：US199333
申请日：1998-11-25
申请人： Atsuo Ito , Noboru Ichinose , Kenji Ojima , Pierre Layrolle , Haruo Kawamura
发明人： Atsuo Ito , Noboru Ichinose , Kenji Ojima , Pierre Layrolle , Haruo Kawamura
IPC分类号： A61K9/00 , A61F2/00 , A61F2/30 , A61L27/00 , A61L27/12 , C01B25/32 , C04B35/447 , C01B25/222 , A61F2/28
CPC分类号： A61L27/12 , A61F2002/30968 , A61F2310/00293
摘要： A tricalcium-phosphate-based prosthetic material is disclosed, which is a sintered ceramic body mainly consisting of tricalcium phosphate containing a limited amount of zinc, which is a known element having an osteogenesis-promoting effect, in the form of a solid solution. By virtue of the limited content of zinc and the form of solid solution in which zinc is contained, the inventive material exhibits an osteogenesis-promoting effect without toxicity. The ceramic body is prepared, preferably, by a process in which a tricalcium phosphate powder containing 0.015-8.00% by weight of zinc is diluted by the addition of hydroxyapatite and/or tricalcium phosphate free from zinc in such a proportion as to give a (Ca+Zn)/P molar ratio of 1.55 to 1.65 and the powder blend is shaped and subjected to sintering.
摘要翻译：公开了一种基于磷酸三钙的假体材料，其是以固体形式形式主要由含有有限量的锌的磷酸三钙组成的烧结陶瓷体，其是具有成骨促进作用的已知元素。由于锌的含量有限，含锌的固溶体形式，本发明的材料表现出无毒性的成骨促进作用。优选通过以下方法制备陶瓷体，其中通过加入不含锌的羟基磷灰石和/或磷酸三钙来稀释含有0.015-8.00重量％的锌的磷酸三钙粉末，其比例为（ Ca + Zn）/ P摩尔比为1.55〜1.65，将粉末混合物成形并进行烧结。

78. 发明授权

US3942017A Apparatus for irradiation with electron beam 失效
标题翻译：电子束照射装置
公开(公告)号：US3942017A
公开(公告)日：1976-03-02
申请号：US504557
申请日：1974-09-09
申请人： Kenichiro Uehara , Atsuo Ito , Koichi Nishimune , Kazutoshi Fujita
发明人： Kenichiro Uehara , Atsuo Ito , Koichi Nishimune , Kazutoshi Fujita
IPC分类号： G21K1/08 , G21K5/04 , H01J37/147 , A61K27/02
CPC分类号： G21K1/08 , G21K5/04 , H01J37/147
摘要： An irradiation apparatus with high energy electrons is disclosed in which a wire shaped or linear object to be irradiated is moved back and forth many times under an electron window so as to irradiate it with an electron beam. According to one feature of the invention, an electron beam, which leaks through gaps between the objects to be irradiated or which penetrates the objects to be irradiated, is reversed by a magnetic field approximately perpendicular to the scanning face of the electron beam by means of a magnet which is disposed under the objects to be irradiated, and the reversed electron beam is thereby again applied to the objects to be irradiated. A high utilization rate of the electron beam is accomplished, and the objects can be thereby uniformly irradiated with the electron beam.
摘要翻译：公开了一种具有高能电子的照射装置，其中待照射的线状或线状物体在电子窗口下来回移动多次，以便以电子束照射。根据本发明的一个特点，通过被照射物体或穿透被照射物体之间的间隙泄漏的电子束通过大致垂直于电子束的扫描面的磁场而被反转，借助于设置在被照射物体下方的磁体，并且由此再次将被反射的电子束施加到被照射物体上。实现电子束的高利用率，能够使电子束均匀地照射物体。

79. 发明授权

US08703580B2 Silicon on insulator (SOI) wafer and process for producing same 有权
标题翻译：绝缘体上硅（SOI）晶片及其制造方法
公开(公告)号：US08703580B2
公开(公告)日：2014-04-22
申请号：US12163764
申请日：2008-06-27
申请人： Atsuo Ito , Yoshihiro Kubota , Kiyoshi Mitani
发明人： Atsuo Ito , Yoshihiro Kubota , Kiyoshi Mitani
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78603
摘要： In a manufacturing method for manufacturing a silicon on insulator (SOI) wafer, an ion injection layer is formed within the wafer, by injecting a hydrogen ion or a rare gas ion from a surface of the single crystal silicon wafer, the ion injection surface of the single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone, the ion injection surface of the single crystal silicon wafer is bonded to the surface of the transparent insulation substrate, by bringing them into close contact with each other at room temperature, with the processed surface(s) as bonding surface(s), and an SOI layer is formed on the transparent insulation substrate, by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer.
摘要翻译：在制造绝缘体上硅（SOI）晶片的制造方法中，通过从单晶硅晶片的表面注入氢离子或稀有气体离子，在晶片内形成离子注入层，离子注入层使用等离子体和/或臭氧处理单晶硅晶片和/或透明绝缘基板的表面，通过使单晶硅晶片的离子注入表面接近透明绝缘基板的表面，在室温下彼此接触，将处理后的表面作为接合表面，并且通过对单晶硅晶片进行机械剥离而对透明绝缘基板形成冲击，形成SOI层层。

80. 发明授权

US08628858B2 Silicone rubber composition for optical sheet, and optical sheet 失效
标题翻译：光学片用硅橡胶组合物和光学片
公开(公告)号：US08628858B2
公开(公告)日：2014-01-14
申请号：US13338396
申请日：2011-12-28
申请人： Minoru Igarashi , Tsutomu Nakamura , Atsuo Ito , Tomoyoshi Furihata , Hyung-Bae Kim
发明人： Minoru Igarashi , Tsutomu Nakamura , Atsuo Ito , Tomoyoshi Furihata , Hyung-Bae Kim
IPC分类号： B32B9/04
CPC分类号： C08K3/36 , C08K5/5419 , C08K9/06 , Y02E10/52 , Y10T428/31663 , C08L83/04
摘要： Disclosed is a millable type silicone rubber composition including as an essential components: (A) 100 parts by weight of an organopolysiloxane represented by the following average compositional formula (I) and having a polymerization degree of at least 100; R1aSiO(4-a)/2 (I) wherein R1 are, identical or different, unsubstituted or substituted monovalent hydrocarbon groups, and a is a positive number of 1.95 to 2.05; (B) 70 to 150 parts by weight of fumed silica having a specific surface area of more than 200 m2/g; (C) 0.1 to 30 parts by weight of an organohydrogenpolysiloxane having at least two hydrogen atoms bonded to silicon atoms in one molecule; and (D) 0.1 to 10 parts by weight of a hydrosilylation reaction catalyst.
摘要翻译：公开了一种可粉碎型硅橡胶组合物，其包含作为必要成分的（A）100重量份由以下平均组成式（I）表示的聚合度为至少100的有机聚硅氧烷; R1aSiO（4-a）/ 2（I）其中R1是相同或不同的未取代或取代的一价烃基，a是1.95〜2.05的正数; （B）70〜150重量份比表面积大于200m 2 / g的热解法二氧化硅; （C）0.1〜30重量份在1分子中具有与硅原子键合的氢原子中的至少2个氢原子的有机氢聚硅氧烷; 和（D）0.1〜10重量份的氢化硅烷化反应催化剂。

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