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61. 发明申请

US20050202976A1 Apparatus for use in nmr system 审中-公开
标题翻译：用于nmr系统的设备
公开(公告)号：US20050202976A1
公开(公告)日：2005-09-15
申请号：US10415551
申请日：2002-09-06
申请人： Neil Killoran
发明人： Neil Killoran
IPC分类号： G01R33/34 , G01R33/3815 , H01L39/00
CPC分类号： G01R33/3815 , G01R33/34023
摘要： Apparatus for use in a nuclear magnetic resonance system comprises a cryostat including a coolant vessel (3) containing coolant such as liquid helium (4) and a refrigerator (8) for cooling coolant in the coolant vessel, the cryostat surrounding a sample space (10). A superconducting coil (2) is located in the coolant vessel (3) for generating a Bo magnetic field in the sample space (10). Rf magnectic field generating and receiving apparatus (14)is located adjacent the sample space. A closed coolant loop (16) contains coolant such as helium which is cooled by the refrigerator (8), and a pump (20) for circulating the coolant around the loop. The coolant loop (16) is thermally coupled with the rf apparatus (14) so as to cool the rf apparatus.
摘要翻译：用于核磁共振系统的装置包括低温恒温器，其包括含有诸如液氦（4）的冷却剂的冷却剂容器（3）和用于冷却冷却剂容器中的冷却剂的冷藏库（8），围绕样品空间）。超导线圈（2）位于冷却剂容器（3）中，用于在样品空间（10）中产生一个氧（O）磁场。 Rf场强产生和接收装置（14）位于样本空间附近。封闭的冷却剂回路（16）包含由冷藏库（8）冷却的诸如氦气的冷却剂和用于使冷却剂循环循环的泵（20）。冷却剂回路（16）与射频装置（14）热耦合，以便冷却射频装置。

62. 发明申请

US20050184284A1 Method and structure to isolate a qubit from the environment 有权
标题翻译：从环境中隔离量子比特的方法和结构
公开(公告)号：US20050184284A1
公开(公告)日：2005-08-25
申请号：US10782811
申请日：2004-02-23
申请人： Guido Burkard , David DiVincenzo , George Keefe , Roger Koch , James Rozen
发明人： Guido Burkard , David DiVincenzo , George Keefe , Roger Koch , James Rozen
IPC分类号： H01L39/00 , G06F7/48 , G06F15/00 , G06F15/16 , G06N99/00 , H01L29/06 , H01L29/08 , H01L31/0256 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L39/22
CPC分类号： G06N99/002 , B82Y10/00
摘要： A method (and structure) of coupling a qubit includes locating the qubit near a transmission line approximately at a location corresponding to a node at a predetermined frequency.
摘要翻译：耦合量子位的方法（和结构）包括在传输线附近定位量子位，大致在与预定频率的节点对应的位置处。

63. 发明授权

US06925316B2 Method of forming superconducting magnets using stacked LTS/HTS coated conductor 失效
标题翻译：使用堆叠的LTS / HTS涂层导体形成超导磁体的方法
公开(公告)号：US06925316B2
公开(公告)日：2005-08-02
申请号：US10379500
申请日：2003-03-05
申请人： Christopher Mark Rey
发明人： Christopher Mark Rey
IPC分类号： H01B1/08 , H01F6/06 , H01F41/04 , H01B12/00 , H01F6/00 , H01L39/00
CPC分类号： H01B1/08 , H01F6/06 , H01F41/048 , Y10S505/705
摘要： A method of forming magnets using stacked superconducting films-disks of coated conductor is described. The superconducting material may be either from the oxide high temperature superconducting (HTS) class or the metallic/inter-metallic low temperature superconducting (LTS) class. An LTS metallic or inter-metallic compound can include Nb, Va, Ti, Hg, Pb, NbTi, Nb3Sn, Nb3Al, etc. or the more recently discover MgB2. An oxide superconductor refers to the RE-Ba2Cu3Ox compound, wherein RE=Y, Nd, La, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu; the Bi2Sr2CaCu2Ox, the (Bi, Pb)2Sr2CaCu2Ox, Bi2Sr2Ca2Cu3Ox or (Bi, Pb)2Sr2Ca2Cu3Ox compound; the Tl2Ca1.5BaCu2Ox or Tl2Ca2Ba2Cu3Ox compound; or a compound involving substitution such as the Nd1+xBa2−xCu3Ox compounds.
摘要翻译：描述了使用层叠超导膜形成磁体的方法 - 涂覆导体的盘。超导材料可以来自氧化物高温超导（HTS）类或金属/金属间低温超导（LTS）级。 LTS金属或金属间化合物可以包括Nb，Va，Ti，Hg，Pb，NbTi，Nb 3 Sn，Nb 3 Al等，或者更近些发现MgB <2> 。氧化物超导体是指RE-Ba 2 Cu 3 O x O x化合物，其中RE = Y，Nd，La，Sm，Eu， Gd，Dy，Ho，Er，Tm，Yb，Lu; （Bi，Pb）2 N 2 O 2，（Bi，Pb）2 N 2 O 2， 2 Sr 2 Sr 2 Ca 2 O 2 x 2，Bi 2 Sr 2 Ca，或者（Bi，Pb）2 Sr 2 O 2，Ca 2 O 3， 3种以上的3种以上的化合物; T 1 2 C 1 Ca 2 O 2 O 2或Ti 2 O 2 C 1 H 2 > 2 2 3 3 3 或涉及取代的化合物，例如Nd 1 + x 2 O 2-x N 3 O x O x x化合物。

64. 发明授权

US06903447B2 Apparatus, methods and articles of manufacture for packaging an integrated circuit with internal matching 失效
标题翻译：用于封装具有内部匹配的集成电路的装置，方法和制品
公开(公告)号：US06903447B2
公开(公告)日：2005-06-07
申请号：US10427330
申请日：2003-05-01
申请人： Norbert A. Schmitz , Richard J. Giacchino , Wayne M. Struble
发明人： Norbert A. Schmitz , Richard J. Giacchino , Wayne M. Struble
IPC分类号： H01L23/49 , H01L23/495 , H01L23/66 , H01L39/00
CPC分类号： H01L23/49541 , H01L23/3107 , H01L23/49524 , H01L23/49575 , H01L23/49589 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01014 , H01L2924/01029 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： An integrated circuit package houses and connects to a die to form an integrated circuit with internal matching. The package comprises a lead frame comprising at least one transmission line, a die paddle, and at least one input lead and at least one output lead. Bond wires connect select locations along the at least one transmission line to ground through impedance matching circuit components located within the integrated circuit to provide an impedance matching network associated with at least one of the output leads. The package may also substantially encapsulate the lead frame, while exposing the die paddle and the input/output leads.
摘要翻译：集成电路封装容纳并连接到管芯，以形成具有内部匹配的集成电路。该封装包括引线框架，该引线框架包括至少一个传输线，管芯焊盘和至少一个输入引线和至少一个输出引线。接合线通过位于集成电路内的阻抗匹配电路组件将至少一个传输线的选择位置连接到地，以提供与至少一个输出引线相关联的阻抗匹配网络。封装还可以基本上封装引线框架，同时暴露管芯焊盘和输入/输出引线。

65. 发明授权

US06890369B2 Biaxially textured articles formed by powder metallurgy 失效
标题翻译：通过粉末冶金形成的双轴纹理制品
公开(公告)号：US06890369B2
公开(公告)日：2005-05-10
申请号：US10232155
申请日：2002-08-30
申请人： Amit Goyal , Robert K. Williams , Donald M. Kroeger
发明人： Amit Goyal , Robert K. Williams , Donald M. Kroeger
IPC分类号： B22F1/00 , C22C1/04 , H01F1/22 , H01F1/33 , H01F10/28 , H01L39/24 , B22F7/02 , B32B15/04 , H01L39/00
CPC分类号： C22C1/0433 , B22F1/0003 , B22F2998/00 , H01F1/22 , H01F1/33 , H01F10/28 , H01L39/2454 , Y10S428/93 , Y10T428/12007 , Y10T428/12049 , Y10T428/12056 , Y10T428/12576 , Y10T428/12611 , Y10T428/12618 , Y10T428/12944 , Y10T428/26 , Y10T428/31678 , Y10T428/31873
摘要： A biaxially textured alloy article having a magnetism less than pure Ni includes a rolled and annealed compacted and sintered powder-metallurgy preform article, the preform article having been formed from a powder mixture selected from the group of mixtures consisting of at least 60 at % Ni powder and at least one of Cr powder, W powder, V powder, Mo powder, Cu powder, Al powder, Ce powder, YSZ powder, Y powder, Mg powder, and RE powder; the article having a fine and homogeneous grain structure; and having a dominant cube oriented {100} orientation texture; and further having a Curie temperature less than that of pure Ni.
摘要翻译：具有小于纯Ni的磁性的双轴织构的合金制品包括轧制和退火压实和烧结的粉末 - 冶金预制品制品，预制品制品由选自由至少60at％Ni组成的混合物组成的粉末混合物形成粉末，Cr粉末，W粉末，V粉末，Mo粉末，Cu粉末，Al粉末，Ce粉末，YSZ粉末，Y粉末，Mg粉末和RE粉末中的至少一种; 该制品具有细小且均匀的晶粒结构; 并且具有取决于{100} <100>的显性立方体结构; 并且还具有小于纯Ni的居里温度的居里温度。

66. 发明授权

US06849891B1 RRAM memory cell electrodes 有权
标题翻译： RRAM存储单元电极
公开(公告)号：US06849891B1
公开(公告)日：2005-02-01
申请号：US10730584
申请日：2003-12-08
申请人： Sheng Teng Hsu , Wei Pan , Fengyan Zhang , Wei-Wei Zhuang , Tingkai Li
发明人： Sheng Teng Hsu , Wei Pan , Fengyan Zhang , Wei-Wei Zhuang , Tingkai Li
IPC分类号： H01L21/28 , G11C13/00 , G11C16/02 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115 , H01L27/22 , H01L29/68 , H01L39/00 , H01L43/08 , H01L45/00 , H01L29/94
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/77 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1675
摘要： A RRAM memory cell is formed on a silicon substrate having a operative junction therein and a metal plug formed thereon, includes a first oxidation resistive layer; a first refractory metal layer; a CMR layer; a second refractory metal layer; and a second oxidation resistive layer. A method of fabricating a multi-layer electrode RRAM memory cell includes preparing a silicon substrate; forming a junction in the substrate taken from the group of junctions consisting of N+ junctions and P+ junctions; depositing a metal plug on the junction; depositing a first oxidation resistant layer on the metal plug; depositing a first refractory metal layer on the first oxidation resistant layer; depositing a CMR layer on the first refractory metal layer; depositing a second refractory metal layer on the CMR layer; depositing a second oxidation resistant layer on the second refractory metal layer; and completing the RRAM memory cell.
摘要翻译：在其上具有工作结的硅衬底上形成有一个RRAM存储单元和形成在其上的金属插塞，包括第一氧化电阻层; 第一难熔金属层; 一个CMR层; 第二难熔金属层; 和第二氧化电阻层。制造多层电极RRAM存储单元的方法包括制备硅衬底; 从由N +结和P +结组成的接头组中形成在衬底中的结; 在接头上沉积金属塞; 在金属插塞上沉积第一抗氧化层; 在第一耐氧化层上沉积第一难熔金属层; 在第一难熔金属层上沉积CMR层; 在CMR层上沉积第二难熔金属层; 在所述第二难熔金属层上沉积第二抗氧化层; 并完成RRAM存储单元。

67. 发明申请

US20050003964A1 Novel superconducting articles, and methods for forming and using same 有权
标题翻译：新型超导制品及其形成和使用方法
公开(公告)号：US20050003964A1
公开(公告)日：2005-01-06
申请号：US10614400
申请日：2003-07-03
申请人： Allan Knoll , Kenneth Lenseth
发明人： Allan Knoll , Kenneth Lenseth
IPC分类号： H01B1/00 , H01B12/00 , H01F6/00 , H01L20060101 , H01L39/00 , H01L39/14 , H01L39/24
CPC分类号： H01L39/2454 , H01L39/143 , Y10T428/12993 , Y10T428/2978
摘要： A superconducting tape is disclosed, including a substrate having a first surface and a second surface opposite the first surface, the substrate including a plurality of indicia provided on the first surface spaced apart along a length of the substrate; and a superconductor layer overlying the second surface. Also disclosed are components incorporating superconducting tapes, methods for manufacturing same, and methods for using same.
摘要翻译：公开了一种超导带，包括具有第一表面和与第一表面相对的第二表面的基板，该基板包括设置在沿基板长度间隔开的第一表面上的多个标记; 以及覆盖第二表面的超导体层。还公开了包含超导带的部件，其制造方法及其使用方法。

68. 发明授权

US6121630A Superconducting thin film and a method for preparing the same 失效
标题翻译：超导薄膜及其制备方法
公开(公告)号：US6121630A
公开(公告)日：2000-09-19
申请号：US81817
申请日：1998-05-20
申请人： Hideo Itozaki , Saburo Tanaka , Nobuhiko Fujita , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Saburo Tanaka , Nobuhiko Fujita , Shuji Yazu , Tetsuji Jodai
IPC分类号： C01G3/00 , C01B13/14 , C01G1/00 , C04B41/89 , C23C14/08 , C23C16/30 , H01B3/00 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24 , H01L29/06 , H01L39/00
CPC分类号： H01L39/24 , H01L39/2435 , H01L39/247 , Y10S428/93 , Y10S505/701 , Y10S505/704 , Y10S505/73 , Y10S505/731 , Y10S505/732
摘要： A high-temperature superconducting thin film of compound oxide selected from the group consisting of:Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Ho.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Lu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Sm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Nd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Gd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Eu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Er.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Dy,Ba.sub.2 Cu.sub.3 O.sub.7-x,Tm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Yb.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x La.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,(La, Sr).sub.2 CuO.sub.4-x,which is deposited on a substrate of sapphire, with the outer surface of the high-temperature superconducting thin film being covered with a protective crystalline film of SrTiO.sub.3.
摘要翻译：选自由以下组成的组的复合氧化物的高温超导薄膜：Y1Ba2Cu3O7-x，Ho1Ba2Cu3O7-x，Lu1Ba2Cu3O7-x，Sm1Ba2Cu3O7-x，Nd1Ba2Cu3O7-x，Gd1Ba2Cu3O7-x，Eu1Ba2Cu3O7-x，Er1Ba2Cu3O7-x，Dy ，沉积在蓝宝石衬底上的Ba2Cu3O7-x，Tm1Ba2Cu3O7-x，Yb1Ba2Cu3O7-xLa1Ba2Cu3O7-xLa1Ba2Cu3O7-x，（La，Sr）2CuO4-x，高温超导薄膜的外表面覆盖有保护 SrTiO3的结晶膜。

69. 发明授权

US6083884A A-axis high temperature superconducting films with preferential in-plane alignment 失效
标题翻译：具有优先面内对准的A轴高温超导薄膜
公开(公告)号：US6083884A
公开(公告)日：2000-07-04
申请号：US77709
申请日：1993-06-15
申请人： Kwo-Hsiung Young , Jonathan Zan-Hong Sun
发明人： Kwo-Hsiung Young , Jonathan Zan-Hong Sun
IPC分类号： C01G1/00 , C30B23/02 , C30B23/08 , C30B29/22 , H01L39/24 , B32B9/00 , H01L39/00
CPC分类号： H01L39/2458 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S428/93 , Y10S505/701
摘要： An a-axis high temperature superconducting film having preferential in-plane orientation is formed. In the preferred embodiment, an a-axis film has substantial amounts of superconductor oriented with its c-axis in a unified direction. YBCO on neodymium gallate (110) plane has resulted in a high temperature superconductor with over 80% by volume being a-axis with c-axis in-plane alignment in one preferential direction. These films are epitaxial. The preferred method of film growth is for in situ growth by laser ablation. Preferably, the a-axis film is nucleated by laser ablation on onto a substrate which is at a temperature of 50 to 100.degree. C. less than the optimal substrate temperature for c-axis growth. Optionally, once a-axis nucleation has begun, the substrate temperature may be increased to optimize superconductor properties.
摘要翻译：形成具有优先面内取向的a轴高温超导膜。在优选实施例中，a轴膜具有以其c轴在统一方向取向的大量超导体。在无铼酸镉（110）平面上的YBCO已经导致高温超导体，超过80体积％的a轴，c轴在一个优选方向上的面内对准。这些膜是外延的。膜生长的优选方法是通过激光烧蚀进行原位生长。优选地，将a轴膜通过激光烧蚀成核到基板上，该基板在低于c轴生长的最佳基板温度的50至100℃的温度下。任选地，一旦开始a轴成核，可以增加衬底温度以优化超导体性质。

70. 发明授权

US6045932A Formation of nonlinear dielectric films for electrically tunable microwave devices 失效
标题翻译：用于电可调谐微波器件的非线性介电膜的形成
公开(公告)号：US6045932A
公开(公告)日：2000-04-04
申请号：US141502
申请日：1998-08-28
申请人： Quanxi Jia , Alp T. Findikoglu
发明人： Quanxi Jia , Alp T. Findikoglu
IPC分类号： H01P1/201 , H01P3/00 , H01P7/08 , B32B9/00 , H01L39/00
CPC分类号： H01P7/088 , H01P1/2013 , H01P3/003 , Y10S428/93
摘要： A thin film structure including a lanthanum aluminum oxide substrate, a thin layer of homoepitaxial lanthanum aluminum oxide thereon, and a layer of a nonlinear dielectric material thereon the thin layer of homoepitaxial lanthanum aluminum oxide is provided together with microwave and electro-optical devices including such a thin film structure.
摘要翻译：包括氧化铝镧基底，其上的同质外延镧氧化铝薄层以及其上的非同质外延氧化镧薄膜的非线性介电材料层的薄膜结构与微波和电光装置一起提供，包括这种薄膜结构。

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