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61. 发明授权

US4675206A Process for the production of a surface-coated article 失效
标题翻译：用于生产表面涂层制品的方法
公开(公告)号：US4675206A
公开(公告)日：1987-06-23
申请号：US849523
申请日：1986-04-08
申请人： Akihiko Ikegaya , Masaaki Tobioka
发明人： Akihiko Ikegaya , Masaaki Tobioka
IPC分类号： C23C16/30 , C23C16/517 , B05D3/06
CPC分类号： C23C16/517 , C23C16/30
摘要： A surface-coated article or part, for example, hard material-coated steels or cemented carbides for cutting tools, wear resisting tools, sliding parts or decoration articles, having good properties comparable to those obtained by the PVD method, can be produced by a plasma CVD method characterized by using jointly a high frequency source and a direct current source as a plasma exciting source, holding a substrate or base metal at a negative potential by the direct current source and adjusting a high frequency power density applied to a plasma-forming space to 0.01 to 1 W/cm.sup.3, an absolute value of a direct current voltage to at most 1500 V and a gaseous atmosphere pressure to 0.05 to 5 Torr.
摘要翻译：表面涂层制品或部件，例如硬质材料涂覆的钢或用于切削工具的耐磨工具，滑动部件或装饰制品的硬质材料涂层钢或硬质合金，具有与通过PVD方法获得的性能相当的良好性能，可以通过等离子体CVD方法的特征在于共同使用高频源和直流电源作为等离子体激发源，通过直流源将衬底或母体金属保持在负电位，并调整施加到等离子体形成的高频功率密度空间为0.01〜1W / cm 3，直流电压的绝对值为1500V以下，气氛气压为0.05〜5Torr。

62. 发明授权

US4439463A Plasma assisted deposition system 失效
标题翻译：等离子体辅助沉积系统
公开(公告)号：US4439463A
公开(公告)日：1984-03-27
申请号：US349892
申请日：1982-02-18
申请人： Stephen C. Miller
发明人： Stephen C. Miller
IPC分类号： C23C14/00 , C23C14/32 , C23C16/517 , H01J37/305 , H01J37/32 , C23C11/00
CPC分类号： C23C14/0021 , C23C14/32 , C23C16/517 , H01J37/3053 , H01J37/32
摘要： Process for use in the deposition of a semiconductor film involves: producing a stream of reactive gaseous species within a first chamber, the reactive species containing a substance to be included within the film; passing the reactive species to a work environment distinct from the first chamber; and incorporating the substance from the reactive species into a film deposited within the work environment.
摘要翻译：用于沉积半导体膜的方法包括：在第一室内产生反应性气体物流，所述反应性物质含有要包含在膜内的物质; 将反应物质传递到与第一室不同的工作环境; 并将来自反应性物质的物质并入沉积在工作环境中的膜中。

63. 发明授权

US4282267A Methods and apparatus for generating plasmas 失效
标题翻译：用于产生等离子体的方法和装置
公开(公告)号：US4282267A
公开(公告)日：1981-08-04
申请号：US127296
申请日：1980-03-05
申请人： Birol Kuyel
发明人： Birol Kuyel
IPC分类号： H01L21/302 , B01J19/12 , C23C14/00 , C23C14/22 , C23C14/24 , C23C16/517 , C23F1/08 , H01L21/3065 , H05B6/80 , H05H1/46 , C23C11/08
CPC分类号： C23C16/517 , B01J19/126 , H05H1/46 , B01J2219/0894
摘要： An RF-excited radial-flow, cylindrical plasma reactor (10) includes a toroidal waveguide (17) of rectangular cross-section connected to a microwave source (21). One of the reactive species (37) is flowed through the waveguide and pre-ionized, thus, permitting independent control over the activation of both reactive species.
摘要翻译： RF激发的径向流动圆柱等离子体反应器（10）包括连接到微波源（21）的矩形横截面的环形波导（17）。反应性物质（37）之一流过波导并预先离子化，从而允许独立控制两种反应性物质的活化。

64. 发明授权

US3594238A Method for treating aluminum surfaces to prevent discoloration 失效
标题翻译：用于处理铝表面以防止破坏的方法
公开(公告)号：US3594238A
公开(公告)日：1971-07-20
申请号：US3594238D
申请日：1968-08-15
申请人： UNITED STATES STEEL CORP
发明人： HOECKELMAN RALPH E
IPC分类号： C23C14/58 , C23C16/517 , C23F7/06
CPC分类号： C23C14/5826 , C23C14/58 , C23C14/5846 , C23C16/517
摘要： A METHOD AND APPARATUS FOR TREATING AN ALUMINUM SURFACE TO PREVENT DISCLORATION OF THE SURFACE WHEN EXPOSED TO BOILING WATER. PARTICULARLY APPLICABLE TO A STEEL SUBSTRATE WHICH HAS A CORROSION-RESISTANT ALUMINUM COATING. THE ALUMINUM SURFACE IS EXPOSED TO AN ATMOSPHER OF VAPORS OF A VOLATILE SILICON COMPOUND AND OXYGEN IN A GASEOUS PLASMA. A THIN PROTECTIVE FILM OF MIXED OXIDES OF SILICON AND ALUMINUM FORMS ON THE SURFACE.

65. 发明申请

US20210384040A1 METHODS FOR DEPOSITING DIELECTRIC MATERIAL 有权
公开(公告)号：US20210384040A1
公开(公告)日：2021-12-09
申请号：US17408943
申请日：2021-08-23
申请人： Applied Materials, Inc.
发明人： Bhargav S. CITLA , Jethro TANNOS , Jingyi LI , Douglas A. BUCHBERGER, JR. , Zhong Qiang HUA , Srinivas D. NEMANI , Ellie Y. YIEH
IPC分类号： H01L21/311 , H01L21/762 , H01J37/32 , H01L21/3065 , H01L21/67 , C23C16/515 , H01L21/02 , C23C16/509 , C23C16/517 , C23C16/505
摘要： Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

66. 发明申请

US20210172060A1 PROCESS AND DEVICE FOR DIAMOND SYNTHESIS BY CVD 有权
公开(公告)号：US20210172060A1
公开(公告)日：2021-06-10
申请号：US17257766
申请日：2019-06-18
申请人： DIAROTECH
发明人： Horacio TELLEZ OLIVA
IPC分类号： C23C16/27 , C23C16/503 , C23C16/509 , C23C16/517 , H01J37/32
摘要： The invention relates to the improvement of synthesis by chemical vapour deposition, particularly diamond synthesis. It is proposed to reduce the time required for the deposition of diamond layers by compressing the plasma near the deposition substrate in order to increase the chances of collision between active species.

67. 发明授权

US10752994B2 Apparatus and method for depositing a coating on a substrate at atmospheric pressure 有权
公开(公告)号：US10752994B2
公开(公告)日：2020-08-25
申请号：US16198002
申请日：2018-11-21
申请人： The Board of Trustees of the University of Illinois
发明人： David N. Ruzic , Yuilun Wu , Ivan Shchelkanov , Jungmi Hong , Zihao Ouyang , Tae Seung Cho
IPC分类号： C23C2/00 , C23C16/517 , C23C14/00 , C23C14/22 , C23C14/32 , H05H1/30 , H05H1/46 , H05H1/48
摘要： An apparatus for depositing a coating on a substrate at atmospheric pressure comprises (a) a plasma torch comprising a microwave source coupled to an antenna disposed within a chamber having an open end, the chamber comprising a gas inlet for flow of a gas over the antenna to generate a plasma jet; (b) a substrate positioned outside the open end of the chamber a predetermined distance away from a tip of the antenna; and (c) a target material to be coated on the substrate disposed at the tip of the antenna.

68. 发明申请

US20190093229A1 APPARATUS AND METHOD FOR DEPOSITING A COATING ON A SUBSTRATE AT ATMOSPHERIC PRESSURE 审中-公开
公开(公告)号：US20190093229A1
公开(公告)日：2019-03-28
申请号：US16198002
申请日：2018-11-21
申请人： The Board of Trustees of the University of Illinois
发明人： David N. Ruzic , Yuilun Wu , Ivan Shchelkanov , Jungmi Hong , Zihao Ouyang , Tae Seung Cho
IPC分类号： C23C16/517 , H05H1/30 , H05H1/46 , H05H1/48 , C23C14/32 , C23C14/00 , C23C14/22
CPC分类号： C23C16/517 , C23C14/0021 , C23C14/228 , C23C14/32 , H05H1/30 , H05H1/46 , H05H1/48 , H05H2001/463
摘要： An apparatus for depositing a coating on a substrate at atmospheric pressure comprises (a) a plasma torch comprising a microwave source coupled to an antenna disposed within a chamber having an open end, the chamber comprising a gas inlet for flow of a gas over the antenna to generate a plasma jet; (b) a substrate positioned outside the open end of the chamber a predetermined distance away from a tip of the antenna; and (c) a target material to be coated on the substrate disposed at the tip of the antenna.

69. 发明申请

US20180127274A1 Treating Particles 审中-公开
公开(公告)号：US20180127274A1
公开(公告)日：2018-05-10
申请号：US15856924
申请日：2017-12-28
申请人： PERPETUUS RESEARCH & DEVELOPMENT LIMITED
发明人： John Buckland , Dylan Walters
IPC分类号： H05H1/46 , B01J19/08 , B01J19/12 , B08B6/00 , C08K9/00 , C09C1/46 , C23C16/26 , H01J37/32 , H01J37/02 , C23C16/517 , C23C16/513 , C23C16/511 , C23C16/509 , C23C16/44
CPC分类号： C01B32/168 , B01J19/087 , B01J19/126 , B01J2219/0809 , B01J2219/0818 , B01J2219/0824 , B01J2219/0879 , B01J2219/0894 , B01J2219/1206 , B08B6/00 , C01B32/19 , C01B32/194 , C01P2004/03 , C08K9/00 , C09C1/46 , C23C16/26 , C23C16/4417 , C23C16/509 , C23C16/511 , C23C16/513 , C23C16/517 , H01J37/023 , H01J37/32018 , H01J37/32192 , H01J37/32568 , H05H1/46 , H05H2001/4697 , H05H2001/485
摘要： A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalising, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.

70. 发明授权

US09809881B2 Method and apparatus for multizone plasma generation 有权
公开(公告)号：US09809881B2
公开(公告)日：2017-11-07
申请号：US13192870
申请日：2011-07-28
申请人： Matthew Scott Rogers , Zhong Qiang Hua , Christopher S. Olsen
发明人： Matthew Scott Rogers , Zhong Qiang Hua , Christopher S. Olsen
IPC分类号： C23C16/455 , C23C16/46 , C23C16/505 , C23C16/513 , C23C16/458 , C23C16/48 , C23C16/517 , H01J37/32
CPC分类号： C23C16/513 , C23C16/45565 , C23C16/4584 , C23C16/481 , C23C16/505 , C23C16/517 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion production using one plasma source, and a second plasma source may be used to provide additional radicals. In one embodiment, a low pressure plasma is generated in a processing region having the substrate positioned therein, and a high pressure plasma is generated in separate region. Radicals from the high pressure plasma are injected into the processing region having the low pressure plasma, thus, altering the natural distribution of radicals to ions at a given operating pressure. The resulting process and apparatus enables tailoring of the ion to radical ratio to allow better control of forming films on high aspect ratio features, and thus improve corner rounding, conformality of sidewall to bottom trench growth, and selective growth.

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