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61. 发明授权

US08404570B2 Graded core/shell semiconductor nanorods and nanorod barcodes 有权
标题翻译：分级核/壳半导体纳米棒和纳米棒条形码
公开(公告)号：US08404570B2
公开(公告)日：2013-03-26
申请号：US12938870
申请日：2010-11-03
申请人： A. Paul Alivisatos , Erik C. Scher , Liberato Manna
发明人： A. Paul Alivisatos , Erik C. Scher , Liberato Manna
IPC分类号： H01L29/72
CPC分类号： B82Y30/00 , B82Y15/00 , C01B19/007 , C01G11/00 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2004/16 , C01P2004/84 , C09K11/565 , C09K11/883 , G01N33/588 , Y10S977/748 , Y10S977/81 , Y10S977/813 , Y10S977/815 , Y10S977/824 , Y10T428/12528 , Y10T428/12535 , Y10T428/12542 , Y10T428/12549 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.
摘要翻译：公开了分级的核/壳半导体纳米棒和分离的纳米棒，其包括II-VI族，III-V族和IV族半导体及其制备方法。还公开了使用核/壳纳米棒的纳米棒条形码，其中核是半导体或金属材料，并且具有或不具有壳。还公开了使用纳米棒条形码标记分析物的方法。

62. 发明申请

US20130062565A1 PREPARATION OF NANOPARTICLES WITH NARROW LUMINESCENCE 有权
标题翻译：具有纳米光致发光的纳米颗粒的制备
公开(公告)号：US20130062565A1
公开(公告)日：2013-03-14
申请号：US13608055
申请日：2012-09-10
申请人： Michael Alan SCHREUDER , Peter Neil TAYLOR
发明人： Michael Alan SCHREUDER , Peter Neil TAYLOR
IPC分类号： C09K11/06 , C09K11/65 , B82Y30/00 , B82Y40/00
CPC分类号： C09K11/06 , Y10S977/813 , Y10S977/815
摘要： A population of light-emissive nitride nanoparticles has a photoluminescence quantum yield of at least 10% and an emission spectrum having a full width at half maximum intensity (FWHM) of less than 100 nm. One suitable method of producing light-emissive nitride nanoparticles comprises a first stage of heating a reaction mixture consisting essentially of nanoparticle precursors in a solvent, the nanoparticle precursors including at least one metal-containing precursor and at least one first nitrogen-containing precursor, and maintaining the reaction mixture at a temperature to seed nanoparticle growth. It further comprises a second stage of adding at least one second nitrogen-containing precursor to the reaction mixture thereby to promote nanoparticle growth.
摘要翻译：发光氮化物纳米颗粒群的光致发光量子产率至少为10％，发射光谱具有半峰强度（FWHM）的全宽小于100nm。制备发光氮化物纳米颗粒的一种合适的方法包括：在溶剂中加热基本上由纳米颗粒前体组成的反应混合物的第一阶段，所述纳米颗粒前体包括至少一种含金属前体和至少一种第一含氮前体，以及将反应混合物保持在使纳米颗粒生长的温度。其还包括向反应混合物中加入至少一个第二含氮前体的第二阶段，从而促进纳米颗粒的生长。

63. 发明授权

US08329516B2 Methods of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08329516B2
公开(公告)日：2012-12-11
申请号：US13404051
申请日：2012-02-24
申请人： Moon-Sook Lee
发明人： Moon-Sook Lee
IPC分类号： H01L21/44 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L27/11521 , H01L27/11524 , H01L29/0673 , H01L29/66825 , H01L29/7881 , Y10S977/813 , Y10S977/842 , Y10S977/843 , Y10S977/89 , Y10S977/891
摘要： A plurality of nanowires is grown on a first substrate in a first direction perpendicular to the first substrate. An insulation layer covering the nanowires is formed on the first substrate to define a nanowire block including the nanowires and the insulation layer. The nanowire block is moved so that each of the nanowires is arranged in a second direction parallel to the first substrate. The insulation layer is partially removed to partially expose the nanowires. A gate line covering the exposed nanowires is formed. Impurities are implanted into portions of the nanowires adjacent to the gate line.
摘要翻译：多个纳米线在与第一基板垂直的第一方向上在第一基板上生长。覆盖纳米线的绝缘层形成在第一基板上，以限定包括纳米线和绝缘层的纳米线块。移动纳米线块，使得每个纳米线沿平行于第一基底的第二方向排列。绝缘层被部分去除以部分地暴露纳米线。形成覆盖暴露的纳米线的栅极线。将杂质注入到与栅极线相邻的纳米线的部分中。

64. 发明申请

US20120161101A1 WATER STABLE III-V SEMICONDUCTOR NANOCRYSTAL COMPLEXES AND METHODS OF MAKING SAME 审中-公开
标题翻译：水稳定III-V半导体纳米复合物及其制备方法
公开(公告)号：US20120161101A1
公开(公告)日：2012-06-28
申请号：US13168393
申请日：2011-06-24
申请人： Daniel LANDRY , Wei LUI , Adam PENG
发明人： Daniel LANDRY , Wei LUI , Adam PENG
IPC分类号： H01L33/04 , H01L33/30 , B82Y99/00 , B82Y40/00
CPC分类号： C23C18/1204 , B82Y20/00 , B82Y30/00 , C09K11/025 , C09K11/565 , C09K11/661 , C09K11/70 , C09K11/7492 , C09K11/75 , C09K11/88 , C09K11/883 , C09K11/892 , C23C18/1295 , C30B7/00 , C30B29/605 , Y10S977/813 , Y10S977/815 , Y10S977/816 , Y10S977/817 , Y10S977/819 , Y10S977/82 , Y10S977/821 , Y10T428/2991
摘要： A water-stable semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The water-stable semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material and a water-stabilizing layer. A method of making a water-stable semiconductor nanocrystal complex is also provided.
摘要翻译：稳定的，具有高发光量子产率的水稳定性半导体纳米晶体复合物。水稳定性半导体纳米晶体复合体具有III-V族半导体纳米晶体材料的半导体纳米晶核和水稳定层。还提供了制备水稳定性半导体纳米晶体复合物的方法。

65. 发明授权

US08101234B2 Highly luminescent color-selective nanocrystalline materials 有权
公开(公告)号：US08101234B2
公开(公告)日：2012-01-24
申请号：US12725438
申请日：2010-03-16
申请人： Moungi Bawendi , Klavs F. Jensen , Bashir O. Dabbousi , Javier Rodriguez-Viejo , Frederic Victor Mikulec
发明人： Moungi Bawendi , Klavs F. Jensen , Bashir O. Dabbousi , Javier Rodriguez-Viejo , Frederic Victor Mikulec
IPC分类号： B05D7/00
CPC分类号： C09K11/883 , B82Y20/00 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/52 , C01P2004/64 , C01P2004/80 , C01P2004/86 , C01P2006/60 , C07F9/224 , C07F9/5304 , C09K11/02 , C09K11/565 , C09K11/885 , C09K11/892 , C30B7/00 , C30B7/14 , C30B29/46 , C30B29/48 , C30B29/60 , C30B29/605 , Y10S977/773 , Y10S977/774 , Y10S977/777 , Y10S977/813 , Y10S977/824 , Y10S977/832 , Y10T428/12035 , Y10T428/12049 , Y10T428/12181 , Y10T428/12986 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.

66. 发明授权

US08003070B2 Methods for forming particles from single source precursors 有权
标题翻译：从单源前体形成颗粒的方法
公开(公告)号：US08003070B2
公开(公告)日：2011-08-23
申请号：US12047956
申请日：2008-03-13
申请人： Robert V. Fox , Rene G. Rodriguez , Joshua Pak
发明人： Robert V. Fox , Rene G. Rodriguez , Joshua Pak
IPC分类号： C01B17/00 , C01B19/00
CPC分类号： H01L31/0322 , H01L21/02485 , H01L21/02505 , H01L21/02568 , H01L21/02601 , H01L21/0262 , Y02E10/541 , Y10S977/813 , Y10S977/824
摘要： Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.
摘要翻译：单源前体经受二氧化碳以形成材料颗粒。二氧化碳可以处于超临界状态。单源前体还可以经受超临界二氧化碳以外的超临界流体以形成材料颗粒。该方法可用于形成纳米颗粒。在一些实施方案中，所述方法用于形成黄铜矿材料。可以制造诸如半导体器件的器件，其包括这样的粒子。形成半导体器件的方法包括使单源前体经二氧化碳形成半导体材料颗粒，并且在颗粒和电极之间建立电接触。

67. 发明申请

US20110201984A1 Medical Device Applications of Nanostructured Surfaces 有权
标题翻译：纳米结构表面的医疗器械应用
公开(公告)号：US20110201984A1
公开(公告)日：2011-08-18
申请号：US13096919
申请日：2011-04-28
申请人： Robert S. Dubrow , Lawrence A. Bock , R. Hugh Daniels , Veeral D. Hardev , Chunming Niu , Vijendra Sahi
发明人： Robert S. Dubrow , Lawrence A. Bock , R. Hugh Daniels , Veeral D. Hardev , Chunming Niu , Vijendra Sahi
IPC分类号： A61L15/58
CPC分类号： A61L31/10 , A61F13/02 , A61L27/34 , A61L2400/12 , A61L2420/04 , A61N1/05 , B82Y30/00 , Y10S977/762 , Y10S977/764 , Y10S977/773 , Y10S977/811 , Y10S977/813 , Y10S977/90 , Y10S977/904 , Y10S977/906 , Y10T428/12111 , Y10T428/249924 , Y10T428/29
摘要： This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.
摘要翻译：本发明提供了新颖的纳米纤维增强表面积基材和包括用于各种医疗装置的这种基底的结构，以及用于这种基底和医疗装置的方法和用途。在一个具体实施例中，公开了用于增强医疗装置植入物表面上的细胞功能的方法，其通常包括提供包括在其上的多个纳米纤维（例如，纳米线）的医疗装置植入物，并将医疗装置植入物暴露于诸如成骨细胞。

68. 发明授权

US07897494B2 Formation of single crystal semiconductor nanowires 有权
标题翻译：形成单晶半导体纳米线
公开(公告)号：US07897494B2
公开(公告)日：2011-03-01
申请号：US12490189
申请日：2009-06-23
申请人： Philippe M. Vereecken
发明人： Philippe M. Vereecken
IPC分类号： H01L21/20
CPC分类号： C30B29/60 , B82Y10/00 , B82Y30/00 , C30B1/023 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/0676 , Y10S977/762 , Y10S977/813
摘要： A method is provided for growing mono-crystalline nanostructures onto a substrate. The method comprises at least the steps of first providing a pattern onto a main surface of the substrate wherein said pattern has openings extending to the surface of the substrate, providing a metal into the openings of the pattern on the exposed main surface, at least partly filling the opening with amorphous material, and then annealing the substrate at temperatures between 300° C. and 1000° C. thereby transforming the amorphous material into a mono-crystalline material by metal mediated crystallization to form the mono-crystalline nanostructure.
摘要翻译：提供了一种将单晶纳米结构生长到基底上的方法。该方法至少包括以下步骤：首先在衬底的主表面上提供图案，其中所述图案具有延伸到衬底表面的开口，在暴露的主表面上的图案的开口中提供金属，至少部分地用无定形材料填充开口，然后在300℃和1000℃之间的温度下退火衬底，从而通过金属介导的结晶将无定形材料转化为单晶材料，以形成单晶纳米结构。

69. 发明授权

US07807265B2 Partially passivated quantum dots, process for making, and sensors therefrom 有权
标题翻译：部分钝化的量子点，制造过程和传感器
公开(公告)号：US07807265B2
公开(公告)日：2010-10-05
申请号：US11748200
申请日：2007-05-14
申请人： Swadeshmukul Santra , Subir Kumar Sabui , Paul H. Holloway , Heesun Yang
发明人： Swadeshmukul Santra , Subir Kumar Sabui , Paul H. Holloway , Heesun Yang
IPC分类号： B32B5/16
CPC分类号： G01N33/588 , B82Y15/00 , G01N21/648 , G01N21/6489 , G01N21/7703 , G01N2021/7786 , Y10S977/773 , Y10S977/813 , Y10S977/824 , Y10S977/834 , Y10T428/2991 , Y10T428/2998
摘要： A partially passivating core shell particle includes a luminescent nanocrystal core, and a partially passivating semiconducting core shell on a surface of the nanocrystal. The shell allows selected analytes to alter a luminescent response of the core shell particle. A quantum dot-based sensing system includes at least one partially passivating core shell particle, a light source for irradiating the partially passivating core shell particle, and a light detector for receiving emissions from the particle, wherein emissions from the core shell particle change in response to the presence of at least one analyte.
摘要翻译：部分钝化的核壳粒子包括发光纳米晶核和在纳米晶体的表面上的部分钝化的半导体核壳。壳体允许选择的分析物改变核壳颗粒的发光响应。基于量子点的感测系统包括至少一个部分钝化的核壳粒子，用于照射部分钝化的核壳粒子的光源和用于接收来自粒子的发射的光检测器，其中核壳粒子的发射响应变化至少存在一种分析物。

70. 发明授权

US07648689B2 Process for the production of InP fine particles and InP fine particle dispersion obtained by the process 失效
标题翻译：通过该方法制备的InP微粒和InP微粒分散体的制备方法
公开(公告)号：US07648689B2
公开(公告)日：2010-01-19
申请号：US11666227
申请日：2006-03-10
申请人： Shuzo Tokumitsu
发明人： Shuzo Tokumitsu
IPC分类号： B22F1/00 , B22F9/00 , C21B15/04 , C22B3/00 , H01L21/00 , H01L21/28 , C09K3/00 , C01B25/00 , C01B33/26 , C01G31/00 , C01G28/00 , C30B23/00
CPC分类号： C09K11/70 , C01B25/087 , Y10S977/813 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/823 , Y10S977/824 , Y10S977/896
摘要： The invention is to provide a process for industrially advantageously producing InP fine particles having a nano-meter size efficiently in a short period of time and an InP fine particle dispersion, and there are provided a process for the production of InP fine particles by reacting an In raw material containing two or more In compounds with a P raw material containing at least one P compound in a solvent wherein the process uses, as said two or more In compounds, at least one first In compound having a group that reacts with a functional group of P compound having a P atom adjacent to an In atom to be eliminated with the functional group in the formation of an In-P bond and at least one second In compound having a lower electron density of In atom in the compound than said first In compound and Lewis base solvent as said solvent, and InP fine particles obtained by the process.
摘要翻译：本发明提供了一种工业上有利地在短时间内有效地生产具有纳米尺寸的InP微粒和InP微粒分散体的方法，并且提供了一种通过使在含有两种或更多种In的化合物的原料中含有至少一种P化合物的P化合物在该方法中使用的溶剂中，作为所述两种或更多种In化合物，具有至少一种具有与官能团反应的基团的第一In化合物具有与形成In-P键时被官能团除去的In原子相邻的P原子的P化合物组以及化合物中比所述第一化合物具有较低电子密度的In原子的至少一种In化合物在化合物和路易斯碱溶剂中作为所述溶剂，并通过该方法获得的InP微粒。

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