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61. 发明申请

US20070031985A1 Semiconductor laser device and method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20070031985A1
公开(公告)日：2007-02-08
申请号：US11581006
申请日：2006-10-16
申请人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
发明人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
IPC分类号： H01L21/20
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01S5/2206 , H01S5/2222 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/32308 , H01S2304/04
摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.
摘要翻译：一种掩埋半导体激光器件的制造方法，包括以下步骤：形成包括覆盖在n型半导体衬底上的底部包层，有源层和顶部覆层的台面结构; 并且通过在台面结构的每个侧表面上和从每个侧表面延伸的裙部上生长p型电流阻挡层和n型电流阻挡层来形成电流限制结构，p型电流阻挡层通过使用含有III族元素气体和V族元素气体的原料气体，其摩尔比在60和350（含）之间。在该方法中，可以以优异的再现性制造包括具有规定的漏电流路径宽度的电流限制结构的半导体激光装置。

62. 发明授权

US06940884B2 Semiconductor laser device and fabricating method thereof 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06940884B2
公开(公告)日：2005-09-06
申请号：US10417268
申请日：2003-04-17
申请人： Yoshinori Ohitsu , Keisuke Miyazaki , Yoshihisa Fujii
发明人： Yoshinori Ohitsu , Keisuke Miyazaki , Yoshihisa Fujii
IPC分类号： H01L21/205 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/343 , H01S5/00
CPC分类号： H01S5/16 , H01S5/2222 , H01S5/2231
摘要： Provided is a semiconductor laser device in which at least an n-type first cladding layer, an active layer and a p-type second cladding layer are formed on or above an n-type semiconductor substrate. An n-type current block layer having a stripe-shaped groove-like removed portion is formed on the second cladding layer and at least a p-type third cladding layer is formed on the current block layer including the stripe-shaped removed portion. The second cladding layer has a p-type C impurity concentration of 3×1017 cm−3 to 2×1018 cm−3.
摘要翻译：提供一种半导体激光器件，其中在n型半导体衬底上或其上形成至少n型第一覆盖层，有源层和p型第二覆盖层。在第二包层上形成具有条形槽状去除部分的n型电流阻挡层，并且在包括条形去除部分的当前阻挡层上至少形成p型第三包覆层。第二包覆层具有3×10 17 cm -3至2×10 18 cm -3的p型C杂质浓度， SUP>。

63. 发明申请

US20050163178A1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US20050163178A1
公开(公告)日：2005-07-28
申请号：US10918358
申请日：2004-08-16
申请人： Kazuhisa Takagi
发明人： Kazuhisa Takagi
IPC分类号： H01S5/323 , H01S5/00 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/2206 , H01S5/2214 , H01S5/2222 , H01S5/2231 , H01S5/227 , H01S5/305 , H01S5/321 , H01S5/3211 , H01S5/3213 , H01S5/34313 , H01S5/34353 , H01S5/34366 , H01S5/34373
摘要： A semiconductor laser device according to the present invention comprises an optical waveguide laminated structure having: a first first-cladding layer made up of a p-InP layer; a double heterojunction layer of p-AlGaInAs; a second first-cladding layer made up of a p-InP layer; a first light confining layer of p-InGaAsP; an active layer of InGaAsP having a quantum well structure; a second light confining layer of n-InGaAsP; and a second-cladding layer made up of an n-InP layer, and heterojunctions of the second kind are formed at the interfaces between the first first-cladding layer and the double heterojunction layer and between the double heterojunction layer and the second first-cladding layer.
摘要翻译：根据本发明的半导体激光器件包括：光波导层叠结构，具有：由p-InP层构成的第一第一包层; p-AlGaInAs的双异质结层; 由p-InP层构成的第二第一包层; p-InGaAsP的第一光限制层; 具有量子阱结构的InGaAsP的有源层; n-InGaAsP的第二光限制层; 以及由n-InP层构成的第二包覆层，并且在第一第一包层和双异质结层之间的界面处以及在双异质结层和第二第一包层之间的界面处形成第二类型的异质结层。

64. 发明授权

US06914922B2 Nitride based semiconductor light emitting device and nitride based semiconductor laser device 失效
标题翻译：基于氮化物的半导体发光器件和氮化物基半导体激光器件
公开(公告)号：US06914922B2
公开(公告)日：2005-07-05
申请号：US09898043
申请日：2001-07-05
申请人： Nobuhiko Hayashi , Takenori Goto , Takashi Kano , Yasuhiko Nomura
发明人： Nobuhiko Hayashi , Takenori Goto , Takashi Kano , Yasuhiko Nomura
IPC分类号： H01L33/14 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/323 , H01S5/00 , H01L29/06 , H01L33/00
CPC分类号： H01S5/32341 , H01L33/14 , H01L33/32 , H01S5/2004 , H01S5/2218 , H01S5/2222 , H01S2301/18
摘要： A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 μm.
摘要翻译：半导体激光器件通过堆叠缓冲层，未掺杂的GaN层，n-GaN接触层，n-InGaN防裂层，n-AlGaN包层，发光层，p-AlGaN包层，和p-GaN接触层。形成包含p-GaN接触层和p-AlGaN包覆层的脊部，并且脊部中的p-AlGaN包层的厚度小于0.3μm。

65. 发明授权

US06826217B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06826217B2
公开(公告)日：2004-11-30
申请号：US10216319
申请日：2002-08-12
申请人： Takashi Kimura
发明人： Takashi Kimura
IPC分类号： H01S500
CPC分类号： H01S5/2231 , H01S5/221 , H01S5/2218 , H01S5/2222 , H01S2301/18
摘要： A semiconductor laser device including a lower cladding layer stacked on a compound semiconductor substrate, an active layer stacked on the lower cladding layer, an upper first cladding layer stacked on the active layer, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, current blocking layers provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. The distance between the upper surface of the active layer and the upper surface of the upper second cladding layer is shorter than the distance between the lower surface of the lower cladding layer and the lower surface of the active layer.
摘要翻译：一种半导体激光器件，包括堆叠在化合物半导体衬底上的下包层，层叠在下包层上的有源层，堆叠在有源层上的上第一包覆层，设置在上第一上的脊形上第二覆层包层，设置在上第二包层的两侧的电流阻挡层，以及设置在上第二包覆层上的接触层。有源层的上表面与上第二包覆层的上表面之间的距离比下包层的下表面和活性层的下表面之间的距离短。

66. 发明授权

US06813298B2 Current blocking structure to improve semiconductor laser performance 失效
标题翻译：电流阻挡结构提高半导体激光器性能
公开(公告)号：US06813298B2
公开(公告)日：2004-11-02
申请号：US10288707
申请日：2002-11-06
申请人： Yuen Chuen Chan , Teik Kooi Ong , Yee Loy Lam
发明人： Yuen Chuen Chan , Teik Kooi Ong , Yee Loy Lam
IPC分类号： H01S319
CPC分类号： H01S5/227 , H01S5/06226 , H01S5/2222 , H01S5/2226 , H01S5/2277
摘要： The layer structure of a DC-PBH laser diode consists of an n-InP substrate (51), an n-InP buffer layer (52), an undoped-InGaAsP active layer (53), a p-Inp cladding layer (54), a p-InP current blocking layer (55), an n-InP current blocking layer (56), a p-InP cladding layer (57), and a p-InGaAsP contact layer (58). An additional layer of Fe-doped InP layer (55a) creates an acceptor level (Fe3+/Fe2+) near mid-band gap. The iron impurities are deep level traps, and will make the capacitance C2 less dependent of the impurity concentration of layer (56) which is normally doped with a concentration larger than 1×1018 cm−3 to lower the leakage current from p-InP blocking layer (57) to p-InP blocking layer (55) that does not contribute to light emission. The capacitance C2 and hence the overall capacitance Cp-n-p-n will be reduced with this Fe doped InP layer (55a) and consequently the displacement current through the current blocking structure during high speed operation will be lowered. In addition, as this Fe-doped InP layer is also a thermally stable semi-insulating material, a high resistivity layer is thus formed between the n-InP blocking layer (56) and P-InP blocking layer (55). Thus, this Fe doped InP layer (55a) will also effectively reduce the leakage current flowing through the p-n-p-n current blocking channel as mentioned above.
摘要翻译： DC-PBH激光二极管的层结构由n-InP衬底（51），n-InP缓冲层（52），未掺杂的InGaAsP有源层（53），p-Inp覆层（54），p-InP电流阻挡层（55），n-InP电流阻挡层（56），p-InP包覆层（57）和p-InGaAsP接触层（58）。附加的Fe掺杂的InP层（55a）在中间带隙附近产生受主能级（Fe 3+ / Fe 2+）。铁杂质是深层陷阱，并且将使得电容C2较小地依赖于通常掺杂浓度大于1×10 18 cm -3的层（56）的杂质浓度以降低来自p的漏电流 -InP阻挡层（57）到不对发光有贡献的p-InP阻挡层（55）。由于Fe掺杂InP层（55a），电容C2和整体电容Cp-n-p-n将被降低，因此在高速运行期间通过电流阻挡结构的位移电流将降低。此外，由于该Fe掺杂InP层也是热稳定的半绝缘材料，因此在n-InP阻挡层（56）和P-InP阻挡层（55）之间形成高电阻率层。因此，如上所述，该Fe掺杂InP层（55a）还将有效地减少流过p-n-p-n电流阻塞通道的漏电流。

67. 发明授权

US06795471B2 Group III nitride compound semiconductor laser and manufacturing method thereof 失效
标题翻译： III族氮化物半导体激光器及其制造方法
公开(公告)号：US06795471B2
公开(公告)日：2004-09-21
申请号：US10117095
申请日：2002-04-08
申请人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
发明人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0224 , H01S5/221 , H01S5/2216 , H01S5/222 , H01S5/2222 , H01S2301/18 , H01S2304/00
摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.
摘要翻译：驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

68. 发明授权

US06590919B1 Nitride group compound semiconductor laser device and method for producing the same 失效
标题翻译：氮化物系化合物半导体激光装置及其制造方法
公开(公告)号：US06590919B1
公开(公告)日：2003-07-08
申请号：US09265916
申请日：1999-03-10
申请人： Yoshihiro Ueta
发明人： Yoshihiro Ueta
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/2206 , H01S5/2222 , H01S5/2226
摘要： A nitride group compound semiconductor laser device of the present invention includes: a pair of cladding layers; an active layer interposed between the cladding layers; and a current constriction layer having a stripe-shaped opening which is to be a current passage, provided above the active layer, wherein the current constriction layer is formed of a high resistant layer obtained by crystallizing an amorphous or polycrystalline nitride group compound semiconductor by heating.
摘要翻译：本发明的氮化物系化合物半导体激光装置包括：一对包层; 介于包层之间的有源层; 以及电流收缩层，其具有设置在有源层上方的作为电流通路的条形开口，其中电流收缩层由通过加热使非晶或多晶氮化物化合物半导体结晶而获得的高电阻层形成。

69. 发明授权

US06549553B1 Vertical-cavity surface-emitting semiconductor laser 有权
公开(公告)号：US06549553B1
公开(公告)日：2003-04-15
申请号：US09261465
申请日：1999-02-24
申请人： Hiroyuki Uenohara , Kouta Tateno , Toshiaki Kagawa , Osamu Tadanaga , Chikara Amano , Takashi Kurokawa
发明人： Hiroyuki Uenohara , Kouta Tateno , Toshiaki Kagawa , Osamu Tadanaga , Chikara Amano , Takashi Kurokawa
IPC分类号： H01S500
CPC分类号： H01S5/18308 , H01S5/18347 , H01S5/209 , H01S5/222 , H01S5/2222 , H01S5/2224 , H01S2301/166
摘要： A vertical-cavity surface-emitting semiconductor laser has a substrate, a lower DBR structure portion having a plurality of layers provided on the substrate, a semiconductor buried structure portion provided over the lower DBR structure portion having at least one layer with buried therein an active layer, and an upper DBR structure portion having a plurality of layers provided over the semiconductor buried structure portion comprising the active layer. The active layer, at least one layer arranged over the active layer and at least one layer arranged beneath the active layer constitute an optical resonator region and each of the layers constituting the optical resonator region has an effective refractive index higher than respective effective refractive indices of other layers in the upper and lower DBR structure portions and a refractive index of the at least one layer constituting the semiconductor buried structure portion.

70. 发明授权

US06498076B1 Method for manufacturing a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US06498076B1
公开(公告)日：2002-12-24
申请号：US09593382
申请日：2000-06-15
申请人： Tomoaki Koui
发明人： Tomoaki Koui
IPC分类号： H01L2120
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01S5/2222 , H01S5/227 , H01S5/2272
摘要： In a method for manufacturing a semiconductor laser having a p-InP current blocking layer and an n-InP current blocking layer formed on both sides of an active layer, the length of surface migration is controlled to be not less than 1500 nm when forming the n-InP current blocking layer. This makes it possible to effectively prevent abnormal growth of the n-InP current blocking layer from taking place.
摘要翻译：在制造具有形成在有源层两侧的p-InP电流阻挡层和n-InP电流阻挡层的半导体激光器的方法中，当形成有源层时，表面迁移的长度被控制在不小于1500nm n-InP电流阻挡层。这使得可以有效地防止n-InP电流阻挡层的异常生长发生。

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