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    • 65. 发明申请
    • OPTICAL ELEMENT FOR VERTICAL EXTERNAL-CAVITY SURFACE-EMITTING LASER
    • 用于垂直外部表面发射激光的光学元件
    • US20130223466A1
    • 2013-08-29
    • US13882998
    • 2011-11-01
    • Stephan GronenbornHolger Moench
    • Stephan GronenbornHolger Moench
    • H01S5/183
    • H01S5/18361G02B19/0057H01S3/08059H01S5/026H01S5/0267H01S5/14H01S5/18388H01S5/4062H01S5/423
    • The present invention relates to an optical element for VEC-SELs or VECSEL arrays. The optical element is formed of a substrate (200) which is transparent at least in a wavelength region of optical radiation. A first interface of the- substrate (200) comprises one or several curved regions forming part of an optical lens or of an array of optical lenses (220) integrated in the substrate (200). The substrate (200) further comprises one or several optical mirrors (210) formed on a second interface of the substrate (200) opposing the first interface or embedded in the substrate (200). The optical mirrors (210) are arranged and designed to back reflect a fraction of optical radiation incident on the first or second interface. The optical mirrors (210) are flat mirrors or curved mirrors having a radius of curvature different from the radius of curvature of the curved region (220). The optical element allows the fabrication of a VECSEL or VECSEL array having a high brightness without the requirement of additional adjustments during fabrication. The VECSEL are arranged at a distance (L) to the optical mirrors (210) and this equals the length of the external cavity. The ROC of the optical lens may be chosen to ROC=L/2 and for the optical mirror ROC>L. The cavity length may be adjusted by a monolithic spacer (120)
    • 本发明涉及一种用于VEC-SEL或VECSEL阵列的光学元件。 光学元件由至少在光辐射的波长区域中透明的基板(200)形成。 衬底(200)的第一界面包括形成光学透镜的一部分或整合在衬底(200)中的光学透镜阵列的一个或多个弯曲区域。 衬底(200)还包括形成在与第一界面相对或嵌入在衬底(200)中的衬底(200)的第二界面上的一个或多个光学镜(210)。 光学镜(210)被布置和设计成反射入射在第一或第二界面上的一部分光学辐射。 光学镜(210)是具有不同于弯曲区域(220)的曲率半径的曲率半径的平面镜或曲面镜。 光学元件允许制造具有高亮度的VECSEL或VECSEL阵列,而不需要在制造期间进行额外的调整。 VECSEL布置在与光学镜(210)的距离(L)处,并且这等于外腔的长度。 光学透镜的ROC可以选择为ROC = L / 2,对于光学镜ROC> L。 空腔长度可以通过整体式隔离件(120)
    • 68. 发明授权
    • Semiconductor laser, semiconductor laser device, and fabrication method of semiconductor laser
    • 半导体激光器,半导体激光器件和半导体激光器的制造方法
    • US08311073B2
    • 2012-11-13
    • US12879541
    • 2010-09-10
    • Kazutaka TakedaTakashi KondoHideaki Ozawa
    • Kazutaka TakedaTakashi KondoHideaki Ozawa
    • H01S3/08
    • H01S5/18388H01L2224/48091H01S5/0071H01S5/02284H01S5/026H01S5/18308H01S5/18313H01S5/18361H01S5/2215H01S5/3215H01L2924/00014
    • A semiconductor laser that includes: a substrate; a first semiconductor multilayer reflector of a first conductive type formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductive type formed on the active region; and an intermediate semiconductor layer of a first conductive type or a second conductive type formed under the first semiconductor multilayer reflector or above the second semiconductor multilayer reflector. An oxidized region formed by oxidizing a part of the intermediate semiconductor layer and an un-oxidized region contacting with the oxidized region are formed in the intermediate semiconductor layer, the un-oxidized region is electrically connected to the first or second semiconductor multilayer reflector, and a beam generated in the active region is reflected at a boundary between the oxidized region and the un-oxidized region to a direction parallel to a principal surface of the substrate, and is emitted from a side surface of the intermediate semiconductor layer.
    • 一种半导体激光器,包括:基板; 形成在所述基板上的第一导电类型的第一半导体多层反射器; 形成在所述第一半导体多层反射器上的有源区; 形成在有源区上的第二导电类型的第二半导体多层反射器; 以及形成在所述第一半导体多层反射器之下或所述第二半导体多层反射器之下的第一导电类型或第二导电类型的中间半导体层。 在中间半导体层中形成通过氧化中间半导体层的一部分而形成的氧化区域和与氧化区域接触的未氧化区域,未氧化区域与第一或第二半导体多层反射体电连接, 在有源区域中产生的光束在氧化区域和未氧化区域之间的边界处反射到与基板的主表面平行的方向,并且从中间半导体层的侧表面发射。