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61. 发明申请

US20160155653A1 System And Method Of Opening A Load Lock Door Valve At A Desired Pressure After Venting 有权
标题翻译：打开一个负载锁门的系统和方法在通气后所需的压力下
公开(公告)号：US20160155653A1
公开(公告)日：2016-06-02
申请号：US14622271
申请日：2015-02-13
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Bradley M. Pomerleau , Eric D. Wilson
IPC分类号： H01L21/673 , G05D7/06
CPC分类号： G05D7/0635 , H01L21/67201
摘要： A system and method for reducing particulate contamination during the loading and unloading of semiconductor substrates into a load lock chamber of a semiconductor processing tool. One sensor that measures the differential pressure between the inside of the load lock and the outside atmosphere is provided. The method uses an algorithm that predicts when to stop the load lock vent so that a small, positive, repeatable pressure burst is delivered each time the door opens. This algorithm will automatically adjust for changes in the vent rate and response times of system vent components.
摘要翻译：一种用于在半导体衬底装载和卸载半导体加工工具的装载锁定室期间减少颗粒污染的系统和方法。提供了一种测量负载锁的内部和外部气氛之间的压差的传感器。该方法使用一种算法来预测何时停止加载锁定通风口，以便每次门打开时都会传送一个小的，积极的，可重复的压力脉冲串。该算法将自动调整排气速率和系统排气部件响应时间的变化。

62. 发明申请

US20160155641A1 System and Method for Mitigating Oxide Growth in a Gate Dielectric 审中-公开
公开(公告)号：US20160155641A1
公开(公告)日：2016-06-02
申请号：US15003466
申请日：2016-01-21
申请人： Texas Instruments Incorporated
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01L21/28 , H01L29/51
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

63. 发明申请

US20160133494A1 SUBSTRATE TRANSFER CHAMBER 审中-公开
标题翻译：基板传送室
公开(公告)号：US20160133494A1
公开(公告)日：2016-05-12
申请号：US14933635
申请日：2015-11-05
申请人： APPLIED MATERIALS, INC.
发明人： SRISKANTHARAJAH THIRUNAVUKARASU , ENG SHENG PEH , SRINIVAS D. NEMANI , ARVIND SUNDARRAJAN , AVINASH AVULA , ELLIE Y. YIEH
IPC分类号： H01L21/677 , H01L21/673 , B25J11/00
CPC分类号： H01L21/67778 , H01L21/67201 , H01L21/67369 , H01L21/67373 , H01L21/67379 , H01L21/67389
摘要： Embodiments of substrate transfer chambers are provided herein. In some embodiments, a substrate transfer chamber includes a body having an interior volume, wherein a bottom portion of the body includes a first opening; an adapter plate coupled to the bottom portion of the body to couple the substrate transfer chamber to a load lock chamber of a substrate processing system; wherein the adapter plate includes a second opening aligned with the first opening to fluidly couple the interior volume with an inner volume of the load lock chamber; a cassette support disposed in the interior volume to support a substrate cassette; and a lift actuator coupled to the cassette support to lower or raise the substrate cassette into or out of the load lock chamber.
摘要翻译：本文提供了基板传送室的实施例。在一些实施例中，衬底传送室包括具有内部容积的主体，其中主体的底部包括第一开口; 耦合到所述主体的底部的适配器板，以将所述衬底传送室耦合到衬底处理系统的负载锁定室; 其中所述适配器板包括与所述第一开口对准的第二开口，以将所述内部容积与所述负载锁定室的内部容积流体连接; 设置在所述内部容积中以支撑衬底盒的盒支架; 以及联接到所述盒支撑件的升降致动器，以将所述基板盒降低或升高到所述负载锁定室中或从所述负载锁定室中升起。

64. 发明申请

US20160115622A1 VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD 审中-公开
标题翻译：蒸气相生长装置和蒸汽相生长方法
公开(公告)号：US20160115622A1
公开(公告)日：2016-04-28
申请号：US14921159
申请日：2015-10-23
申请人： NuFlare Technology, Inc.
发明人： Hideki ITO , Yuusuke SATO
IPC分类号： C30B25/02 , C30B25/12
CPC分类号： C23C14/566 , C23C16/54 , H01L21/67201 , H01L21/67742
摘要： A vapor phase growth apparatus according to an embodiment includes n (n is an integer equal to or greater than 1) reaction chambers each processing a substrate under a pressure less than atmospheric pressure, a cassette chamber having a cassette holding portion capable of placing a cassette holding the substrate on the cassette holding portion, internal pressure of the cassette chamber being able to be reduced to a pressure less than the atmospheric pressure, a transferring chamber provided between the reaction chamber and the cassette chamber and transferring the substrate under a pressure less than the atmospheric pressure, and a substrate standby portion capable of simultaneously holding n or more substrates processed in the reaction chamber and provided in a region having a heat-resistant temperature of 500° C. or more, internal pressure of the region being able to be reduced to a pressure less than the atmospheric pressure.
摘要翻译：根据实施方案的气相生长装置包括在低于大气压的压力下处理基板的n（n是等于或大于1的整数）的反应室，具有盒保持部分的盒室能够放置盒将所述基板保持在所述盒保持部分上，所述盒室的内部压力能够被减小到小于大气压的压力;传送室，设置在所述反应室和所述盒室之间，并且在小于大气压力和基板备用部分，其能够同时保持在反应室中处理的n个或更多个基板，并且设置在耐热温度为500℃以上的区域中，该区域的内部压力能够降低到小于大气压力的压力。

65. 发明授权

US09324594B2 Workpiece handling modules 有权
标题翻译：工件处理模块
公开(公告)号：US09324594B2
公开(公告)日：2016-04-26
申请号：US13334181
申请日：2011-12-22
申请人： Alexander G. Krupyshev , John Underwood
发明人： Alexander G. Krupyshev , John Underwood
IPC分类号： H01L21/67
CPC分类号： H01L21/677 , H01L21/67126 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： A workpiece handling module including a first housing member and a second housing member pivotally movable relative to the first member forming a housing having an access side and a second side opposite the access side and side walls, a first portion of the side walls is carried by the first member and a second portion of the side walls is carried by the second member, and at least one of the first and second housing members includes at least one sealable opening for allowing ingress and egress of workpieces to and from an interior chamber formed by the first and second housing members in a closed configuration, and the second portion of the side walls adjacent the access side and carried by the second member is greater than the first portion of the side walls adjacent the access side and carried by the first member.
摘要翻译：一种工件处理模块，包括第一壳体构件和第二壳体构件，所述第二壳体构件可相对于第一构件枢转运动，所述第一构件形成具有入口侧的壳体和与入口侧和侧壁相对的第二侧，侧壁的第一部分由所述第一构件和所述侧壁的第二部分由所述第二构件承载，并且所述第一和第二壳体构件中的至少一个包括至少一个可密封的开口，用于允许工件进入和离开由内部腔室形成的内部腔室所述第一和第二壳体构件处于闭合构型，并且邻近所述进入侧并由所述第二构件承载的所述侧壁的第二部分大于邻近所述进入侧并由所述第一构件承载的所述侧壁的第一部分。

66. 发明授权

US09281221B2 Ultra-high vacuum (UHV) wafer processing 有权
标题翻译：超高真空（UHV）晶圆加工
公开(公告)号：US09281221B2
公开(公告)日：2016-03-08
申请号：US13679258
申请日：2012-11-16
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chung-En Kao , Tien-Chen Hu , Mao-Lin Kao , Kuo-Fu Chien , Keith Koai
IPC分类号： H01L21/67
CPC分类号： H01L21/67161 , H01L21/67184 , H01L21/67201
摘要： One or more techniques or systems for ultra-high vacuum (UHV) wafer processing are provided herein. In some embodiments, a vacuum system includes one or more cluster tools connected via one or more bridges. For example, a first cluster tool is connected to a first bridge. Additionally, a second cluster tool is connected to a second bridge. In some embodiments, the first bridge is configured to connect the second cluster tool to the first cluster tool. In some embodiments, the second cluster tool is connected to the first bridge, thus forming a ‘tunnel’. In some embodiments, the second bridge comprises one or more facets configured to enable a connection to an additional process chamber or an additional cluster tool. In this manner, a more efficient UHV environment is provided, thus enhancing a yield associated with wafer processing, for example.
摘要翻译：本文提供了一种或多种用于超高真空（UHV）晶圆处理的技术或系统。在一些实施例中，真空系统包括经由一个或多个桥连接的一个或多个集群工具。例如，第一集群工具连接到第一桥。此外，第二集群工具连接到第二桥。在一些实施例中，第一桥被配置为将第二集群工具连接到第一集群工具。在一些实施例中，第二集群工具连接到第一桥，从而形成“隧道”。在一些实施例中，第二桥梁包括一个或多个构造成能够连接到附加处理室或附加群集工具的小面。以这种方式，提供了更有效的UHV环境，从而提高了例如与晶片处理相关的产量。

67. 发明申请

US20160064233A1 PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING 有权
公开(公告)号：US20160064233A1
公开(公告)日：2016-03-03
申请号：US14936448
申请日：2015-11-09
申请人： Applied Materials, Inc.
发明人： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur
IPC分类号： H01L21/3065
CPC分类号： H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831
摘要： Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

68. 发明申请

US20160049313A1 METHOD OF OUTGASSING A MASK MATERIAL DEPOSITED OVER A WORKPIECE IN A PROCESS TOOL 有权
标题翻译：在工艺工具中通过工件沉积掩模材料的方法
公开(公告)号：US20160049313A1
公开(公告)日：2016-02-18
申请号：US14458220
申请日：2014-08-12
申请人： Applied Materials, Inc.
发明人： PRABHAT KUMAR , Wei-Sheng Lei , Martin S. Wohlert , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/322 , H01L21/67 , B01J3/00
CPC分类号： H01L21/3221 , H01L21/3081 , H01L21/67115 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67393 , H01L21/67739 , H01L21/67748 , H01L21/78
摘要： Embodiments of the invention include methods and apparatuses for outgassing a workpiece prior to a plasma processing operation. An embodiment of the invention may comprise transferring a workpiece having a mask to an outgassing station that has one or more heating elements. The workpiece may then be heated to an outgassing temperature that causes moisture from the mask layer to be outgassed. After outgassing the workpiece, the workpiece may be transferred to a plasma processing chamber. In an additional embodiment, one or more outgassing stations may be located within a process tool that has a factory interface, a load lock coupled to the factory interface, a transfer chamber coupled to the load lock, and a plasma processing chamber coupled to the transfer chamber. According to an embodiment, an outgassing station may be located within any of the components of the process tool.
摘要翻译：本发明的实施例包括在等离子体处理操作之前使工件脱气的方法和装置。本发明的实施例可以包括将具有掩模的工件传送到具有一个或多个加热元件的除气站。然后可以将工件加热到使得来自掩模层的水分脱气的除气温度。在对工件进行放气之后，可以将工件转移到等离子体处理室。在另外的实施例中，一个或多个除气站可以位于处理工具内，该工具具有出厂界面，耦合到出厂界面的负载锁，耦合到负载锁的传送室以及耦合到传送的等离子体处理室房间。根据实施例，除气站可以位于处理工具的任何部件内。

69. 发明申请

US20160013083A1 System and Method for Mitigating Oxide Growth in a Gate Dielectric 审中-公开
公开(公告)号：US20160013083A1
公开(公告)日：2016-01-14
申请号：US14858422
申请日：2015-09-18
申请人： Texas Instruments Incorporated
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01L21/677 , H01L29/66 , H01L29/423 , H01L21/324 , H01L29/51 , H01L29/49 , H01L29/78 , H01L21/28
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

70. 发明申请

US20160013082A1 System and Method for Mitigating Oxide Growth in a Gate Dielectric 审中-公开
公开(公告)号：US20160013082A1
公开(公告)日：2016-01-14
申请号：US14858279
申请日：2015-09-18
申请人： Texas Instruments Incorporated
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01L21/677 , H01L29/51 , H01L21/3105 , H01L21/3205 , H01L21/28 , H01L21/02
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

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