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61. 发明申请

US20040105194A1 Spin valve transistor with stabilization and method for producing the same 审中-公开
标题翻译：具有稳定性的旋转阀晶体管及其制造方法
公开(公告)号：US20040105194A1
公开(公告)日：2004-06-03
申请号：US10307062
申请日：2002-11-29
发明人： Robert E. Fontana JR. , Jeffrey S. Lille
IPC分类号： G11B005/39 , H01L029/82
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B2005/0008 , G11B2005/3996 , H01F10/3268 , H01F41/302 , H01F41/325 , H01L29/66984
摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, a first insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a second insulating layer adjacent the bias layer, and a ferromagnetic layer over the second insulating layer, wherein the first insulating layer and the second insulating layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the first insulating layer and the second insulating layer. The bias layer is magnetic and is at least three times the thickness of the base region.
摘要翻译：自旋阀晶体管（SVT）的方法和结构包括磁场传感器，与磁场传感器相邻的第一绝缘层，邻近绝缘层的偏置层，与偏置层相邻的第二绝缘层，以及铁磁层所述第二绝缘层，其中所述第一绝缘层和所述第二绝缘层包括反铁磁材料。磁场传感器包括基极区域，邻近基极区域的集电极区域，邻近基极区域的发射极区域和位于基极区域和发射极区域之间的势垒区域。偏置层位于第一绝缘层和第二绝缘层之间。偏置层是磁性的，并且是基极区域的厚度的至少三倍。

62. 发明授权

US06717779B2 Magnetoresistive head and manufacturing method therefor 失效
标题翻译：磁阻头及其制造方法
公开(公告)号：US06717779B2
公开(公告)日：2004-04-06
申请号：US09964050
申请日：2001-09-26
申请人： Atsuhiko Nagai
发明人： Atsuhiko Nagai
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F41/325
摘要： A magnetoresistive head includes a first magnetic shield, an antiferromagnetic layer provided on the first magnetic shield, a pinned ferromagnetic layer provided on the antiferromagnetic layer, a nonmagnetic intermediate layer provided on the pinned ferromagnetic layer, and a free ferromagnetic layer provided on the nonmagnetic intermediate layer. The magnetoresistive head further includes a pair of hard magnetic film bias layers provided on the opposite sides of the free ferromagnetic layer, a pair of terminal layers provided on the hard magnetic film bias layers, a metal oxide film formed on the free ferromagnetic layer at an exposed portion between the pair of terminal layers, and a second magnetic shield provided on the pair of terminal layers and the metal oxide film.
摘要翻译：磁阻头包括第一磁屏蔽，设置在第一磁屏蔽上的反铁磁层，设置在反铁磁层上的钉扎铁磁层，设置在钉扎铁磁层上的非磁性中间层，以及设置在非磁性中间层上的自由铁磁层层。磁阻头还包括设置在自由铁磁层的相对侧上的一对硬磁膜偏置层，设置在硬磁性膜偏置层上的一对端子层，在自由铁磁层上形成的金属氧化物膜，一对端子层之间的露出部分，以及设置在一对端子层和金属氧化物膜上的第二磁屏蔽。

63. 发明申请

US20040037015A1 Electromagnetic transducer laminate, electromagnetic transducer, thin film magnetic head, magnetic head assembly, magnetic reproducing apparatus, and method of manufacturing electromagnetic transducer 失效
标题翻译：电磁换能器层叠体，电磁换能器，薄膜磁头，磁头组件，磁再生装置及制造电磁换能器的方法
公开(公告)号：US20040037015A1
公开(公告)日：2004-02-26
申请号：US10624685
申请日：2003-07-23
申请人： TDK Corporation
发明人： Takashi Asatani , Fujimi Kimura
IPC分类号： G11B005/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01F41/325
摘要： Provided is a magnetic reproducing apparatus capable of controlling a magnetic domain of a free layer, and obtaining a sufficient reproduction output even if the size of an MR device is reduced. The MR device is formed so as to have a laminate structure in which a semi-hard magnetic layer and a first ferromagnetic layer (free layer) are exchange-coupled to each other through a non-magnetic exchange coupling layer. Unlike an abutted junction structure using a hard magnetic layer, the distribution of a magnetic bias applied from the semi-hard magnetic layer to the first ferromagnetic layer becomes uniform, thereby the first ferromagnetic layer is brought into a single magnetic domain state. Moreover, the semi-hard magnetic layer has a moderate coercive force lying halfway between soft magnetism and hard magnetism, so the magnetization direction of the first ferromagnetic layer is not fixed. Therefore, the magnetization direction of the first ferromagnetic layer can be easily rotated, thereby a magnetoresistive ratio can be secured, so even if the size of the MR device is reduced, a sufficient reproduction output can be obtained.
摘要翻译：提供了一种能够控制自由层的磁畴并且即使MR器件的尺寸减小也能获得足够的再现输出的磁再现装置。 MR器件形成为具有半硬磁性层和第一铁磁性层（自由层）通过非磁性交换耦合层彼此交换耦合的叠层结构。与使用硬磁性层的邻接结结构不同，从半硬磁性层施加到第一铁磁层的磁偏压的分布变得均匀，从而使第一铁磁层成为单一磁畴状态。此外，半硬磁性层在软磁性和硬磁性之间具有中等矫顽力，因此第一铁磁层的磁化方向不固定。因此，第一铁磁层的磁化方向可以容易地旋转，从而可以确保磁阻比，因此即使MR器件的尺寸减小，也可以获得足够的再现输出。

64. 发明申请

US20040022108A1 Spin valve element and thin film magnetic head 有权
公开(公告)号：US20040022108A1
公开(公告)日：2004-02-05
申请号：US10631576
申请日：2003-07-31
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11C007/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044 , Y10T428/1121 , Y10T428/115
摘要： A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film. It is thus possible to increase the sensitivity to an external magnetic field, and suppress the occurrence of a shunt loss to increase the rate of change in magnetoresistance.

65. 发明授权

US06643107B1 Spin valve thin film magnetic element and method of manufacturing the same 失效
标题翻译：旋转阀薄膜磁性元件及其制造方法
公开(公告)号：US06643107B1
公开(公告)日：2003-11-04
申请号：US09679724
申请日：2000-10-04
申请人： Naoya Hasegawa , Kiyoshi Sato , Kenji Honda
发明人： Naoya Hasegawa , Kiyoshi Sato , Kenji Honda
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3143 , G11B5/3903 , H01F10/3272 , H01F41/325
摘要： The invention provides a spin valve thin film element in which output characteristics and the stability of reproduced waveforms are improved, asymmetry is decreased, and the occurrence of side reading is prevented. The spin valve thin film element includes a lamination having an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic intermediate layer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, and a backed layer composed of a nonmagnetic conductive material, which are laminated on a substrate. Hard bias layers are formed on both sides of the lamination, and orient the magnetization direction of the free magnetic layer in the direction crossing the magnetization direction of the second pinned magnetic layer. Electrode layers are formed on the hard bias layers to supply a sensing current J to the lamination. The electrode layers are formed to extend to the surface of the lamination toward the central portion from both sides of the lamination.
摘要翻译：本发明提供了一种自旋阀薄膜元件，其中输出特性和再现波形的稳定性得到改善，不对称性降低，并且防止了侧读出现。自旋阀薄膜元件包括具有反铁磁层，第一钉扎磁性层，非磁性中间层，第二钉扎磁性层，非磁性导电层，自由磁性层和由非磁性导电性构成的背衬层的层压体材料，其被层压在基底上。在层叠体的两面形成有硬偏移层，并且在与第二被钉扎磁性层的磁化方向交叉的方向上使自由磁性层的磁化方向取向。电极层形成在硬偏压层上，以向层压提供感测电流J。电极层被形成为从层压体的两侧朝向中心部分延伸到层压体的表面。

66. 发明授权

US06586121B2 Spin-valve thin-film magnetic element 有权
公开(公告)号：US06586121B2
公开(公告)日：2003-07-01
申请号：US09862738
申请日：2001-05-22
申请人： Yosuke Ide , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F41/325 , Y10S428/90 , Y10T428/1129 , Y10T428/1186 , Y10T428/12438 , Y10T428/12465 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/12806 , Y10T428/12875 , Y10T428/12931
摘要： A spin-valve thin-film magnetic element includes a substrate; an antiferromagnetic layer; a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer; a nonmagnetic conductive layer in contact with the pinned magnetic layer; a free magnetic layer in contact with the nonmagnetic conductive layer, the magnetization direction of the free magnetic layer being aligned in a direction perpendicular to the magnetization direction of the pinned magnetic layer; and a back layer composed of a nonmagnetic conductive material formed in contact with the free magnetic layer at the opposite side of the nonmagnetic conductive layer. The back layer is composed of at least one metal selected from the group consisting of Ru, Pt, Ir, Rh, Pd, Os, and Cr.

67. 发明申请

US20030096057A1 Spin filter bottom spin valve head with continuous spacer exchange bias 失效
公开(公告)号：US20030096057A1
公开(公告)日：2003-05-22
申请号：US10292350
申请日：2002-11-12
申请人： HEADWAY TECHNOLOGIES, INC.
发明人： Cheng T. Horng , Mao-Min Chen , Min Li , Ru-Ying Tong
IPC分类号： B05D005/12
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F10/324 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01F41/325 , Y10T29/49034 , Y10T29/49044
摘要： A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al2O3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data confirming the effectiveness of this structure is provided, together with a method for manufacturing it and, additionally, its longitudinal bias leads.

68. 发明申请

US20030063415A1 Exchange coupling film having improved wettability of seed layer 失效
标题翻译：具有改善种子层润湿性的交换耦合膜
公开(公告)号：US20030063415A1
公开(公告)日：2003-04-03
申请号：US10197654
申请日：2002-07-17
申请人： Alps Electric Co., Ltd.
发明人： Naoya Hasegawa , Masamichi Saito , Kenichi Tanaka
IPC分类号： G11B005/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01F41/303 , H01F41/325
摘要： A seed layer is formed of a Cr film with a thickness of 15 null or more and 50 null or less comprising at least partially an amorphous phase, thereby enabling wettability of the surface the seed layer to be remarkably improved as compared with conventional one, the unidirectional bias magnetic field in the pinned magnetic layer to be increased, and the surface of each layer on the seed layer to have good lubricity.
摘要翻译：种子层由厚度为15以上且50以下且至少部分为非晶相的Cr膜形成，从而与现有技术相比，种子层的表面的润湿性显着提高，单向偏置固定磁性层中的磁场增加，种子层上各层的表面具有良好的润滑性

69. 发明申请

US20020191356A1 Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same 有权
标题翻译：交换耦合膜具有改善的载流可靠性和改善电阻变化率和使用其的磁感应元件
公开(公告)号：US20020191356A1
公开(公告)日：2002-12-19
申请号：US10079292
申请日：2002-02-20
申请人： Alps Electric Co., Ltd.
发明人： Naoya Hasegawa , Masamichi Saito
IPC分类号： G11B005/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3932 , G11B5/40 , H01F10/3218 , H01F10/3295 , H01F41/303 , H01F41/325 , Y10T428/11 , Y10T428/1129
摘要： A seed layer having a chromium content in the range of 35 to 60 atomic percent and a thickness of 10 to 200 null is deposited to have a single phase of the face-centered cubic structure by optimizing the sputtering conditions, etc. The surface of the seed layer maintaining the face-centered cubic structure exhibits improved wettability, and the rate of change in resistance nullR/R can thereby be improved.
摘要翻译：通过优化溅射条件等，沉积铬含量在35至60原子％范围内并且厚度为10至200的种子层以具有面心立方结构的单相。维持面心立方结构的种子层表现出改进的润湿性，从而可以提高电阻变化率DELTAR / R。

70. 发明申请

US20010040778A1 LIMITING MAGNETORESISTIVE ELECTRICAL INTERACTION TO A PREFERRED PORTION OF A MAGNETIC REGION IN MAGNETIC DEVICES 失效
标题翻译：限制磁性电气相互作用到磁性装置中磁性区域的优选部分
公开(公告)号：US20010040778A1
公开(公告)日：2001-11-15
申请号：US09021352
申请日：1998-02-10
发明人： DAVID WILLIAM ABRAHAM , PHILIP EDWARD BATSON , JOHN SLONCZEWSKI , PHILIP LOUIS TROUILLOUD , WILLIAM JOSEPH GALLAGHER , STUART PARKIN
IPC分类号： G11B005/39 , G11C011/15
CPC分类号： H01L27/224 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F41/325 , H01L43/08 , H01L43/12
摘要： Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory (nullMRAMnull) arrays, which employ giant magnetoresistive (nullGMRnull) cells, or magnetic tunnel junction (nullMTJnull) cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.
摘要翻译：公开了磁阻器件，其包括可以施加至少两个磁状态的可变磁区域。在与器件进行磁阻电相互作用时，可以感测可变磁区的磁状态和相邻参考磁场的相对取向，从而提供二进制数据存储能力。本发明将电相互作用仅限于可变磁性区域的优选部分，例如可以可靠地预测两个磁状态基本上均匀且彼此相反的部分。公开了用于限制与可变磁性区域的该优选部分的电相互作用的结构，并且包括较小的相互作用区域，以及设置在可变磁性区域附近的绝缘和导电的相互作用区域的交替区域。本发明的原理可以应用于在位线和字线的交点处采用巨磁阻（“GMR”）单元或磁隧道结（“MTJ”）单元的磁随机存取存储器（“MRAM”）阵列，还包括具有用于访问磁数据存储介质上的数据的访问元件的诸如磁数据存储设备的磁传感器。

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