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61. 发明授权

US09725317B2 Use of triammonium salt of aurin tricarboxylic acid as risk mitigant for aluminum hydride 有权
公开(公告)号：US09725317B2
公开(公告)日：2017-08-08
申请号：US13720321
申请日：2012-12-19
申请人： Savannah River Nuclear Solutions, LLC
发明人： Jose A. Cortes-Concepcion , Donald L. Anton
IPC分类号： C01B6/34 , C01B6/06
CPC分类号： C01B6/34 , C01B6/06
摘要： A process and a resulting product by process of an aluminum hydride which is modified with by physically combining in a ball milling process an aluminum hydride with a triammonium salt of aurin tricarboxylic acid. The resulting product is an aluminum hydride which is resistant to air, ambient moisture, and liquid water while maintaining useful hydrogen storage and release kinetics.

62. 发明申请

US20170200906A1 GERMANANE ANALOGS AND OPTOELECTRONIC DEVICES USING THE SAME 审中-公开
公开(公告)号：US20170200906A1
公开(公告)日：2017-07-13
申请号：US14244572
申请日：2014-04-03
申请人： OHIO STATE INNOVATION FOUNDATION
发明人： Joshua Goldberger , Shishi Jiang , Elisabeth Bianco
IPC分类号： H01L51/00 , H01L31/0352 , H01L33/04 , C01B6/06 , H01L31/032 , H01L29/24 , C07F7/30 , H01L29/06 , H01L33/26
CPC分类号： H01L51/0077 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01B6/06 , C01G17/00 , C01G19/00 , C07F7/2208 , C07F7/30 , H01L29/0665 , H01L29/24 , H01L31/032 , H01L31/035209 , H01L33/04 , H01L33/26 , H01L51/005 , H01L51/0558 , H01L51/42 , H01L51/50 , Y10S977/758 , Y10S977/788 , Y10S977/896 , Y10S977/933 , Y10S977/95
摘要： The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.

63. 发明授权

US09327974B1 Aluminum hydride production 有权
标题翻译：氢化铝生产
公开(公告)号：US09327974B1
公开(公告)日：2016-05-03
申请号：US13671067
申请日：2012-11-07
申请人： Mark A. Petrie
发明人： Mark A. Petrie
IPC分类号： C01B6/06 , C07B31/00 , C07B41/02 , C07C1/22 , C07C2/74 , C08F4/12 , H01M10/26 , H01M8/02 , H01M8/06
CPC分类号： C01B6/06 , C08F4/12 , H01M4/383 , H01M8/065 , Y02P70/56 , C08F10/00 , C08F4/52 , C08F4/60
摘要： Methods for producing aluminum hydride are provided herein. Exemplary methods may include combining an amount of aluminum with an amount of a metal in such a way that a eutectic mixture is formed and treating the eutectic mixture with hydrogen gas to produce aluminum hydride. Various methods and processes are conducted under anhydrous conditions or within anhydrous systems.
摘要翻译：本文提供了生产氢化铝的方法。示例性的方法可以包括将铝的量与一定量的金属组合，使得形成共晶混合物并用氢气处理共晶混合物以产生氢化铝。各种方法和方法在无水条件下或在无水体系内进行。

64. 发明申请

US20150210543A1 METHOD FOR PREPARATION OF CRYSTALLINE ALANE USING QUARTERNARY AMMONIUM ALUMINUM HYDRIDE 审中-公开
标题翻译：使用季铵金属氢氧化物制备结晶橙的方法
公开(公告)号：US20150210543A1
公开(公告)日：2015-07-30
申请号：US14678303
申请日：2015-04-03
申请人： INTELLIGENT ENERGY INC.
发明人： Allison M. Fisher
IPC分类号： C01B6/06
CPC分类号： C01B6/06
摘要： The invention relates to a method of forming α-alane. The method includes reacting a tetraalkyl ammonium alanate solution in toluene with an alkyl halide or other proton source such as HCl or H2SO4.
摘要翻译：本发明涉及一种形成α-烯烃的方法。该方法包括使甲烷中的四烷基铵铝酸盐溶液与烷基卤化物或其它质子源如HCl或H 2 SO 4反应。

65. 发明申请

US20150175418A1 APPARATUS FOR PREPARING GERMANE GAS AND METHOD FOR PREPARING MONOGERMANE GAS USING SAME 有权
标题翻译：用于制备锗烷气体的装置和使用其制备单体气体的方法
公开(公告)号：US20150175418A1
公开(公告)日：2015-06-25
申请号：US14623966
申请日：2015-02-17
申请人： OCI Materials Co., Ltd.
发明人： Tae Hee Lee , Won Ho Lee , Byung Kwan Kwon
IPC分类号： C01B6/06 , B01J19/24
CPC分类号： C01B6/06 , B01J19/0013 , B01J19/0066 , B01J19/0093 , B01J19/18 , B01J19/248 , B01J2219/00063 , B01J2219/00087 , B01J2219/00094 , B01J2219/00186 , B01J2219/00783 , B01J2219/00813 , B01J2219/00889 , B01J2219/00961 , B01J2219/2401 , C01G17/00
摘要： The present disclosure relates to an apparatus for preparing germane gas and a method for preparing monogermane gas using same. More particularly, the present disclosure relates to an apparatus for preparing germane gas, capable of stably producing a large amount of monogermane gas by mixing starting materials in short time and removing reaction heat at the same time using a reactor having a microstructured channel, and a method for preparing monogermane gas using same. In accordance with the present disclosure, it is easy to control rapid increase of reaction temperature and pressure during mass production of germane gas. Accordingly, monogermane gas can be produced in large scale with high yield.
摘要翻译：本公开涉及一种用于制备锗烷气体的装置以及使用其制备单齿气体的方法。更具体地说，本公开涉及一种用于制备锗烷气体的装置，其能够通过在短时间内混合原料并同时使用具有微结构化通道的反应器同时除去反应热来稳定地产生大量的单齿气体，使用它们制备单齿气体的方法。根据本公开，在大量生产锗烷气体期间容易控制反应温度和压力的快速增加。因此，可以高产率大规模地生产单齿气体。

66. 发明授权

US08900654B2 Methods of polymerizing silanes and cyclosilanes using N-heterocyclic carbenes, metal complexes having N-heterocyclic carbene ligands, and lanthanide compounds 有权
标题翻译：使用N-杂环卡宾聚合硅烷和环硅烷的方法，具有N-杂环卡宾配体的金属络合物和镧系元素化合物
公开(公告)号：US08900654B2
公开(公告)日：2014-12-02
申请号：US13194472
申请日：2011-07-29
申请人： Klaus Kunze , Gregory Nyce , Wenzhuo Guo
发明人： Klaus Kunze , Gregory Nyce , Wenzhuo Guo
IPC分类号： B05D5/12 , H01L51/00 , H01B3/18 , C01B33/04 , C01B6/06
CPC分类号： C01B6/06 , C01B33/04 , H01B3/18 , H01L51/0094 , Y02E10/549 , Y02P70/521
摘要： Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SinH2n and SinH2n+2, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high purity, high solubility and/or high viscosity. The polysilanes, polygermanes and/or polysilagermanes are useful as a precursor to silicon- and/or germanium-containing conductor, semiconductor and dielectric films.
摘要翻译：包括通式SinH2n和SinH2n + 2的硅烷（和任选的环硅烷）化合物的受控聚合和/或低聚的组合物和方法，以及卤代硅烷和芳基硅烷，以产生具有低的可溶性聚硅烷，多晶硅和/或聚硅烷碳和金属污染物的水平，高分子量，低挥发性，高纯度，高溶解度和/或高粘度。聚硅烷，多晶硅和/或聚硅烷可用作含硅和/或锗的导体，半导体和介电膜的前体。

67. 发明申请

US20140246630A1 CONTINUOUS PROCESS AND CONTINUOUS REACTING APPARATUS FOR SYNTHESIZING SEMICONDUCTOR GASES 审中-公开
标题翻译：用于合成半导体气体的连续工艺和连续反应装置
公开(公告)号：US20140246630A1
公开(公告)日：2014-09-04
申请号：US14349089
申请日：2012-10-31
申请人： Duck Joo YANG
发明人： Duck Joo Yang
IPC分类号： C01B6/06 , C09D5/24
CPC分类号： C01B6/065 , C01B6/06 , C09D5/24 , Y02E60/36
摘要： The present invention relates to a continuous process and a continuous reacting apparatus for synthesizing a semiconductor gas including germane (GeH4) or arsine (AsH3) gas.
摘要翻译：本发明涉及用于合成包含锗烷（GeH4）或胂（AsH3）气体的半导体气体的连续方法和连续反应装置。

68. 发明授权

US08518360B2 Silicon-germanium hydrides and methods for making and using same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US08518360B2
公开(公告)日：2013-08-27
申请号：US13542987
申请日：2012-07-06
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/00 , C30B25/02
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

69. 发明申请

US20130129607A1 SYNTHESIS OF STANNANE AND DEUTEROSTANNANE 有权
标题翻译： STANNANE和DEUTEROSTANNANE的合成
公开(公告)号：US20130129607A1
公开(公告)日：2013-05-23
申请号：US13814665
申请日：2011-08-10
申请人： Cole J. Ritter, III
发明人： Cole J. Ritter, III
IPC分类号： C01B6/06
CPC分类号： C01B6/06 , C01B4/00 , Y02E60/364
摘要： The present invention relates to a process for the preparation of stannane and deuterostannane by reacting a stannic halide with lithium aluminum hydride or aluminum deuteride respectively in a polydentate solvent.
摘要翻译：本发明涉及一种通过在多齿溶剂中使卤化锡与氢化铝锂或氘代铝反应制备锡烷和氘代锡烷的方法。

70. 发明申请

US20120020864A1 Hydride Compounds with Silicon and Germanium Core Atoms and method of Synthesizing Same 失效
标题翻译：具有硅和锗核原子的氢化物化合物及其合成方法
公开(公告)号：US20120020864A1
公开(公告)日：2012-01-26
申请号：US13180961
申请日：2011-07-12
申请人： John Kouvetakis , Cole J. Ritter, III , John Tolle
发明人： John Kouvetakis , Cole J. Ritter, III , John Tolle
IPC分类号： C01B33/04
CPC分类号： C01B33/04 , C01B6/06 , Y10S148/058
摘要： A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
摘要翻译：提供了一种用于合成式（H3Ge）4-xSiHx的硅 - 锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配位体的化合物组合，形成硅 - 锗氢化物。具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。三氟甲磺酸硅烷可以是H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。三氟甲磺酸硅烷可以包括H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括将H3GeSiH 2（OSO 2 CF 3）与KGeH 3组合，形成了。

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