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61. 发明授权

US10141185B2 Oxide semiconductor, coating liquid, method of forming oxide semiconductor film, semiconductor element, display element, image display device and image display system 有权
公开(公告)号：US10141185B2
公开(公告)日：2018-11-27
申请号：US15401157
申请日：2017-01-09
申请人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
发明人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
IPC分类号： G09G5/00 , H01L21/02 , H01L29/24 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/861 , H01L27/32
摘要： An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO)(ZO)mi(BO)(ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.

62. 发明授权

US09418842B2 Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor 有权
标题翻译：用于形成金属氧化物薄膜的涂布液，金属氧化物薄膜，场效应晶体管和制造场效晶体管的方法
公开(公告)号：US09418842B2
公开(公告)日：2016-08-16
申请号：US14361150
申请日：2012-11-28
申请人： Yuki Nakamura , Naoyuki Ueda , Yukiko Abe , Yuji Sone , Shinji Matsumoto , Mikiko Takada , Ryoichi Saotome
发明人： Yuki Nakamura , Naoyuki Ueda , Yukiko Abe , Yuji Sone , Shinji Matsumoto , Mikiko Takada , Ryoichi Saotome
IPC分类号： H01L21/02 , H01L29/786 , H01L29/221 , H01L29/66
CPC分类号： H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02628 , H01L29/221 , H01L29/66969 , H01L29/7869
摘要： A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.
摘要翻译：用于形成金属氧化物薄膜的涂布液包括：无机铟化合物; 无机钙化合物或无机锶化合物，或其二者; 和有机溶剂。

63. 发明申请

US20150158300A1 NOZZLE PLATE, METHOD OF MANUFACTURING NOZZLE PLATE, INKJET HEAD, AND INKJET PRINTING APPARATUS 有权
标题翻译：喷嘴板，制造喷嘴板，喷头和喷墨打印设备的方法
公开(公告)号：US20150158300A1
公开(公告)日：2015-06-11
申请号：US14412827
申请日：2013-07-19
申请人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Mikiko Takada , Ryoichi Saotome
发明人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Mikiko Takada , Ryoichi Saotome
IPC分类号： B41J2/16 , B23P15/16
CPC分类号： B41J2/162 , B23P15/16 , B41J2/1433 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1634 , B41J2/1642 , B41J2/1646 , B41J2202/11 , Y10T29/49401
摘要： A nozzle plate having a nozzle hole that penetrates through the nozzle plate in a thickness direction is disclosed. The nozzle plate includes a discharge outlet that is formed at the nozzle hole, and provided curvatures of four corner portions of an opening shape of the discharge outlet are denoted as R1, R2, R3, and R4, the opening shape of the discharge outlet is configured to approximate the equation R1=R2≧R3=R4≈0.
摘要翻译：公开了一种喷嘴板，其具有沿厚度方向穿过喷嘴板的喷嘴孔。喷嘴板包括形成在喷嘴孔处的排出口，排出口的开口形状的四个角部的曲率表示为R1，R2，R3，R4，排出口的开口形状为被配置为近似等式R1 =R2≥R3=R4≈0。

64. 发明授权

US08956969B2 Hole formation method, multilayer wiring, semiconductor device, display element, image display device, and system containing via hole formed by the hole formation method 有权
标题翻译：孔形成方法，多层布线，半导体装置，显示元件，图像显示装置以及包含通孔形成方法形成的通孔的系统
公开(公告)号：US08956969B2
公开(公告)日：2015-02-17
申请号：US13372874
申请日：2012-02-14
申请人： Yuji Sone , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Kazuhiro Murata , Kazuyuki Masuda
发明人： Yuji Sone , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Kazuhiro Murata , Kazuyuki Masuda
IPC分类号： H01L21/4763 , H01L21/768 , H05K3/46
CPC分类号： H01L21/76802 , H05K3/4644 , H05K2203/308
摘要： A hole formation method including applying a pillar-forming liquid to a base material, to thereby form a pillar; applying an insulating film-forming material to the base material on which the pillar has been formed, to thereby form an insulating film; removing the pillar to form an opening in the insulating film; and heat treating the insulating film in which the opening has been formed.
摘要翻译：一种孔形成方法，包括将柱状液体施加到基材上，从而形成支柱; 在形成有柱的基材上涂覆绝缘膜形成材料，从而形成绝缘膜; 移除所述柱以在所述绝缘膜中形成开口; 对形成有开口部的绝缘膜进行热处理。

65. 发明申请

US20150001531A1 FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 有权
标题翻译：场效应晶体管，显示元件，图像显示装置和系统
公开(公告)号：US20150001531A1
公开(公告)日：2015-01-01
申请号：US14312950
申请日：2014-06-24
申请人： Naoyuki Ueda , Yuki Nakamura , Shinji Matsumoto , Yuji Sone , Mikiko Takada , Ryoichi Saotome , Sadanori Arae , Yukiko Abe
发明人： Naoyuki Ueda , Yuki Nakamura , Shinji Matsumoto , Yuji Sone , Mikiko Takada , Ryoichi Saotome , Sadanori Arae , Yukiko Abe
IPC分类号： H01L29/786 , H01L29/24 , H01L27/12 , H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1229 , H01L29/04 , H01L29/24
摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.
摘要翻译：场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，其设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个被替代地掺杂有至少一种掺杂剂选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中所述掺杂剂的化合价大于构成所述n型氧化物半导体的金属离子的化合价，不包括掺杂剂。

66. 发明授权

US08746203B2 Lubrication apparatus for four-stroke engine 有权
标题翻译：四冲程发动机润滑装置
公开(公告)号：US08746203B2
公开(公告)日：2014-06-10
申请号：US13665995
申请日：2012-11-01
申请人： Yuki Nakamura
发明人： Yuki Nakamura
IPC分类号： F01M1/04
CPC分类号： F01M1/04
摘要： A lubrication apparatus for a four-stroke engine includes a piston, a cylinder, a crank chamber and a valve operating chamber. The lubrication apparatus configured to lubricate driving parts while circulating oil mist through an oil circulation pathway, using pressure fluctuation in the crank chamber, the pressure fluctuation being caused by reciprocating motion of the piston. The lubrication apparatus further includes a direct passageway configured to allow communication between the valve operating chamber and the crank chamber when a negative pressure is created in the crank chamber. The direct passageway includes a flexible tube part that is formed out of the cylinder.
摘要翻译：用于四冲程发动机的润滑装置包括活塞，气缸，曲柄室和气门操作室。所述润滑装置构成为，通过利用曲柄室内的压力波动使油雾循环通过油循环路径而润滑驱动部，所述压力波动是由活塞的往复运动引起的。润滑装置还包括直接通道，其构造成当在曲柄室中产生负压时允许阀操作室和曲柄室之间的连通。直接通道包括形成在气缸外的柔性管部分。

67. 发明申请

US20140054879A1 CURTAIN AIRBAG DEVICE 有权
标题翻译：窗帘安全气囊设备
公开(公告)号：US20140054879A1
公开(公告)日：2014-02-27
申请号：US14114313
申请日：2012-04-05
申请人： Hiroyuki Taguchi , Atsushi Nakashima , Yuki Nakamura
发明人： Hiroyuki Taguchi , Atsushi Nakashima , Yuki Nakamura
IPC分类号： B60R21/231 , B60R21/232 , B60R21/213
CPC分类号： B60R21/23138 , B60R21/213 , B60R21/232 , B60R21/237
摘要： A curtain airbag device that can be applied to a small-width pillar. The curtain airbag device is accommodated in a region extending from at least an A-pillar to an upper portion of a window frame, and includes an airbag that is deployed in a curtain form near a side window of a vehicle interior in order to protect an occupant; and a gas generator that supplies inflation gas to the airbag. The accommodated airbag is formed in a rod shape by being folded in a roll form. When the airbag is accommodated, the airbag is partially compressed toward the center of the airbag at a narrow portion where an installation area of the A-pillar is narrow, in order to partially decrease a diameter of the airbag.
摘要翻译：可应用于小宽度支柱的帘式气囊装置。帘式安全气囊装置容纳在从至少A柱延伸到窗框的上部的区域中，并且包括在车辆内部的侧窗附近以窗帘形式展开的气囊，以保护乘客以及向气囊供给充气气体的气体发生器。容纳的气囊通过折叠成卷状而形成为杆状。当安全气囊被容纳时，气囊在A柱的安装区域窄的狭窄部分处朝向气囊的中心部分地被压缩，以便部分地减小气囊的直径。

68. 发明申请

US20130240881A1 COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD EFFECT TRANSISTOR, AND METHOD FOR PRODUCING THE FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：用于形成金属氧化物薄膜，金属氧化物薄膜，场效应晶体管和用于产生场效应晶体管的方法的涂覆液体
公开(公告)号：US20130240881A1
公开(公告)日：2013-09-19
申请号：US13989975
申请日：2011-11-22
申请人： Yuki Nakamura , Naoyuki Ueda , Yukiko Abe , Yuji Sone
发明人： Yuki Nakamura , Naoyuki Ueda , Yukiko Abe , Yuji Sone
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/66969
摘要： A coating liquid for forming a metal oxide thin film, the coating liquid including: an inorganic indium compound; at least one of an inorganic magnesium compound and an inorganic zinc compound; and a glycol ether.
摘要翻译：一种用于形成金属氧化物薄膜的涂布液，所述涂布液包括：无机铟化合物; 无机镁化合物和无机锌化合物中的至少一种; 和乙二醇醚。

69. 外观设计

USD682782S1 Engine for a brushcutter 有权
标题翻译：发动机为刷子
公开(公告)号：USD682782S1
公开(公告)日：2013-05-21
申请号：US29416086
申请日：2012-03-19
申请人： Yuji Yamamoto , Yuki Nakamura , Yasuyuki Sakakibara
设计人： Yuji Yamamoto , Yuki Nakamura , Yasuyuki Sakakibara

70. 发明授权

US08304827B2 Semiconductor device having on a substrate a diode formed by making use of a DMOS structure 有权
标题翻译：在衬底上具有通过利用DMOS结构形成的二极管的半导体器件
公开(公告)号：US08304827B2
公开(公告)日：2012-11-06
申请号：US12644734
申请日：2009-12-22
申请人： Yuki Nakamura , Koji Shirai , Hirofumi Nagano , Jun Morioka , Tsubasa Yamada , Kazuaki Yamaura , Yasunori Iwatsu
发明人： Yuki Nakamura , Koji Shirai , Hirofumi Nagano , Jun Morioka , Tsubasa Yamada , Kazuaki Yamaura , Yasunori Iwatsu
IPC分类号： H01L29/66
CPC分类号： H01L27/0635 , H01L27/0629
摘要： A semiconductor device includes a diode formed by making use of a DMOS transistor structure. In addition to such a DMOS transistor structure, the semiconductor device includes a second buried layer of the first conductivity type being provided on a first buried layer of a second conductivity type that is in a floating state. Moreover, the second buried layer of the first conductivity type and a second diffusion region of the first conductive type are connected by a first diffusion region of the first conductivity type. A first electrode is set as anode, and a second electrode and a third electrode are short-circuited and set as cathode.
摘要翻译：半导体器件包括通过利用DMOS晶体管结构形成的二极管。除了这种DMOS晶体管结构之外，半导体器件包括第一导电类型的第二掩埋层，其设置在处于浮置状态的第二导电类型的第一掩埋层上。此外，第一导电类型的第二掩埋层和第一导电类型的第二扩散区域通过第一导电类型的第一扩散区域连接。第一电极被设置为阳极，第二电极和第三电极被短路并设置为阴极。

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