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61. 发明申请

US20090003062A1 Non-volatile semiconductor device 失效
标题翻译：非易失性半导体器件
公开(公告)号：US20090003062A1
公开(公告)日：2009-01-01
申请号：US12068409
申请日：2008-02-06
申请人： Jae-chul Park , Jae-woong Hyun , Young-soo Park , Sun-il Kim
发明人： Jae-chul Park , Jae-woong Hyun , Young-soo Park , Sun-il Kim
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A nonvolatile semiconductor device according to example embodiments may include a plurality of memory cells on a semiconductor substrate and at least one selection transistor on the semiconductor substrate, wherein the at least one selection transistor may be disposed at a different level from the plurality of memory cells. The at least one selection transistor may be connected to a data line and/or a power source line via a first contact and/or a third contact, respectively. The at least one selection transistor may be connected to the plurality of memory cells via a second contact and/or a fourth contact. The active layer of the at least one selection transistor may contain an oxide. Accordingly, the nonvolatile semiconductor device according to example embodiments may include a selection transistor having a reduced size.
摘要翻译：根据示例性实施例的非易失性半导体器件可以包括半导体衬底上的多个存储单元和半导体衬底上的至少一个选择晶体管，其中所述至少一个选择晶体管可以设置在与所述多个存储单元不同的电平。所述至少一个选择晶体管可以分别经由第一触点和/或第三触点连接到数据线和/或电源线。所述至少一个选择晶体管可以经由第二触点和/或第四触点连接到所述多个存储单元。所述至少一个选择晶体管的有源层可以含有氧化物。因此，根据示例性实施例的非易失性半导体器件可以包括具有减小的尺寸的选择晶体管。

62. 发明申请

US20080315193A1 Oxide-based thin film transistor, method of fabricating the same, zinc oxide etchant, and a method of forming the same 审中-公开
标题翻译：基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
公开(公告)号：US20080315193A1
公开(公告)日：2008-12-25
申请号：US12149409
申请日：2008-05-01
申请人： Chang-jung Kim , Young-soo Park , Eun-ha Lee , Jae-chul Park
发明人： Chang-jung Kim , Young-soo Park , Eun-ha Lee , Jae-chul Park
IPC分类号： H01L29/22 , H01L21/34 , C09K13/06 , C09K13/08
CPC分类号： C09K13/06 , H01L21/467 , H01L29/7869
摘要： Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
摘要翻译：提供一种锌（Zn）氧化物基薄膜晶体管，其可以包括栅极，栅极上的栅极绝缘层，包含氧化锌的沟道，并且可以在栅极绝缘层的一部分上，以及源极和漏极接触渠道的各边。锌（Zn）氧化物基薄膜晶体管还可以包括在源极和漏极之间的沟道中的凹陷，并且可以使用氧化锌基蚀刻剂来形成凹陷。

63. 发明申请

US20080164479A1 Semiconductor device including poly-si and method of manufacturing the same 有权
标题翻译：包括多晶硅的半导体器件及其制造方法
公开(公告)号：US20080164479A1
公开(公告)日：2008-07-10
申请号：US12000242
申请日：2007-12-11
申请人： Wenxu Xianyu , Jung-hyun Lee , Hyung-Jin Bae , Young-soo Park
发明人： Wenxu Xianyu , Jung-hyun Lee , Hyung-Jin Bae , Young-soo Park
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/28537 , H01L27/1021 , H01L29/861
摘要： A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.
摘要翻译：提供了包括多晶硅（poly-Si）的半导体器件及其制造方法。该半导体器件包括形成在TaN xS材料层上的TaN 材料层和多晶硅层。包括多晶硅的半导体器件可以通过形成TaN xS材料层并通过沉积形成在TaN材料层上的硅和退火形成多晶硅层来制造硅。

64. 发明申请

US20080026547A1 Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device 有权
标题翻译：形成多晶硅图案的方法，具有多晶硅图案的二极管，具有多晶硅图案的多层交叉点电阻式存储器件以及制造二极管和存储器件的方法
公开(公告)号：US20080026547A1
公开(公告)日：2008-01-31
申请号：US11713738
申请日：2007-03-05
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A method of forming a poly-silicon pattern may include forming an amorphous silicon pattern on a lower layer; forming a capping layer on the substrate covering the amorphous silicon pattern; poly-crystallizing the amorphous silicon pattern using an excimer laser annealing process; and removing the capping layer.
摘要翻译：形成多晶硅图案的方法可以包括在下层上形成非晶硅图案; 在覆盖所述非晶硅图案的所述基板上形成覆盖层; 使用准分子激光退火工艺多晶结晶非晶硅图案; 并去除覆盖层。

65. 发明授权

US07176488B2 Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof 有权
标题翻译：具有柔性基板上的保护盖的薄膜晶体管，使用其的电子器件及其制造方法
公开(公告)号：US07176488B2
公开(公告)日：2007-02-13
申请号：US10748271
申请日：2003-12-31
申请人： Do-young Kim , Wan-jun Park , Young-soo Park , June-key Lee , Yo-sep Min , Jang-yeon Kwon , Sun-ae Seo , Young-min Choi , Soo-doo Chae
发明人： Do-young Kim , Wan-jun Park , Young-soo Park , June-key Lee , Yo-sep Min , Jang-yeon Kwon , Sun-ae Seo , Young-min Choi , Soo-doo Chae
IPC分类号： H01L29/04 , H01L31/20
CPC分类号： H01L29/78603 , G02F1/133305 , G02F1/136227 , G02F2201/50 , H01L23/3192 , H01L24/24 , H01L24/82 , H01L27/1214 , H01L27/3248 , H01L27/3258 , H01L29/66757 , H01L51/5253 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2251/5338 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01058 , H01L2924/01078 , H01L2924/01082 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/00
摘要： In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.
摘要翻译：在柔性基板上实现的薄膜半导体器件，使用该薄膜半导体器件的电子器件及其制造方法中，薄膜半导体器件和电子器件包括柔性基板，形成在柔性基板上的半导体芯片以及密封半导体芯片的保护盖。通过使用保护盖，可以提高薄膜半导体器件对由于基板弯曲引起的应力的耐久性。

66. 发明申请

US20070031741A1 EUVL reflection device, method of fabricating the same, and mask, projection optics system and EUVL apparatus using the EUVL reflection device 审中-公开
标题翻译： EUVL反射装置及其制造方法，掩模，投影光学系统和使用EUVL反射装置的EUVL装置
公开(公告)号：US20070031741A1
公开(公告)日：2007-02-08
申请号：US11498020
申请日：2006-08-03
申请人： Hoon Kim , Suk-pil Kim , I-hun Song , Young-soo Park , Seung-hyuk Chang
发明人： Hoon Kim , Suk-pil Kim , I-hun Song , Young-soo Park , Seung-hyuk Chang
IPC分类号： G02B5/20 , F21V9/06 , F21V9/04 , G21K5/00 , G03F1/00 , G02B5/08
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F7/70316 , G03F7/70958 , G21K1/062
摘要： A reflection device that may include a substrate and a multi-reflection layer formed on the substrate. The multi-reflection layer may be formed of a material capable of reflecting EUV rays. The multi-reflection layer may be formed by stacking a plurality of layer groups, each including a first material layer, a surface-treated layer obtained by surface-treating the first material layer, and a second material layer formed on the surface-treated layer. A method of fabricating the reflection device that may include preparing a substrate and forming a multi-reflection layer on the substrate from a material capable of reflecting EUV rays. The forming of the multi-reflection layer may be performed by repeatedly forming a layer group. The forming of the layer group may include forming a first material layer, surface-treating the first material layer, and forming a second material layer on the surface-treated first material layer.
摘要翻译：可以包括形成在基板上的基板和多反射层的反射装置。多反射层可以由能够反射EUV射线的材料形成。多反射层可以通过层叠多个层组而形成，每个层组包括第一材料层，通过表面处理第一材料层获得的表面处理层和形成在表面处理层上的第二材料层。一种制造反射装置的方法，其可以包括准备基板并且在能够反射EUV射线的材料的基板上形成多反射层。多反射层的形成可以通过重复形成层组来进行。层组的形成可以包括形成第一材料层，对第一材料层进行表面处理，以及在表面处理的第一材料层上形成第二材料层。

67. 发明申请

US20060196522A1 Dye cup 有权
标题翻译：染色杯
公开(公告)号：US20060196522A1
公开(公告)日：2006-09-07
申请号：US10552346
申请日：2004-04-12
申请人： Young-soo Park
发明人： Young-soo Park
IPC分类号： A45D24/10
CPC分类号： A45D19/00 , A45D2019/0066 , B44D3/128
摘要： A cup part with a top open for containing a dye therein is included, and comb teeth are provided side by side at an upper end surface of the cup part or an inner surface of the cup part. By utilizing the comb teeth, operations of scraping an unnecessary dye off a brush or the like and settling the shape of the brush portion or the like can be facilitated, and hair, dust and the like attaching to the brush or the like can be removed without contaminating hands.
摘要翻译：包括具有顶部开口以容纳染料的杯部分，并且梳齿在杯部的上端表面或杯部的内表面并排设置。通过利用梳齿，可以方便地将不必要的染料从刷子等上刮下来并使毛刷部分的形状等沉降的操作，并且可以除去附着到刷子等上的毛发，灰尘等没有污染的手。

68. 发明申请

US20060008957A1 Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same 失效
标题翻译：制造多晶硅薄膜的方法和使用其制造晶体管的方法
公开(公告)号：US20060008957A1
公开(公告)日：2006-01-12
申请号：US11003326
申请日：2004-12-06
申请人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
发明人： Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
IPC分类号： H01L21/205
CPC分类号： H01L21/02532 , H01L21/02164 , H01L21/02274 , H01L21/02354 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2026 , H01L21/31608 , H01L29/4908 , H01L29/66757 , H01L29/78675
摘要： A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 Å or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.
摘要翻译：提供一种制造多晶硅薄膜的方法和使用其制造多晶硅TFT的方法。使用ICP-CVD在低温下形成多晶硅薄膜。在ICP-CVD之后，在通过预定步骤增加能量的同时执行ELA。使用ICP-CVD在约150℃的温度下沉积多晶硅有源层和SiO 2/2栅极绝缘层。多晶硅的大晶粒尺寸约为3000或更大。 SiO 2 2的界面陷阱密度可以高达10-11 / cm 2。具有良好电特性的晶体管可以在低温下制造，因此可以形成在耐热塑料基板上。

69. 发明授权

US09337381B2 Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure 有权
标题翻译：半导体缓冲结构，包括半导体缓冲结构的半导体器件，以及使用半导体缓冲结构制造半导体器件的方法
公开(公告)号：US09337381B2
公开(公告)日：2016-05-10
申请号：US14484456
申请日：2014-09-12
申请人： Jun-youn Kim , Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Young-soo Park , Su-hee Chae
发明人： Jun-youn Kim , Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Young-soo Park , Su-hee Chae
IPC分类号： H01L21/00 , H01L33/00 , H01L33/12 , H01L21/02 , H01L33/32
CPC分类号： H01L33/0025 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/32
摘要： A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.
摘要翻译：半导体缓冲结构包括硅衬底，形成在硅衬底上的成核层和形成在成核层上的缓冲层。缓冲层包括由具有均匀组成比的氮化物半导体材料形成的第一层，由与第一层上的成核层相同的材料形成的第二层和由相同组成比的相同材料形成的第三层作为第二层的第一层。

70. 发明授权

US09257599B2 Semiconductor light emitting device including hole injection layer 有权
标题翻译：半导体发光器件包括空穴注入层
公开(公告)号：US09257599B2
公开(公告)日：2016-02-09
申请号：US14288824
申请日：2014-05-28
申请人： Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Young-soo Park , Young-jo Tak
发明人： Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Young-soo Park , Young-jo Tak
IPC分类号： H01L21/00 , H01L29/06 , H01L33/00 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/12
CPC分类号： H01L33/06 , H01L33/007 , H01L33/12 , H01L33/14 , H01L33/32
摘要： According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.
摘要翻译：根据示例性实施例，半导体发光器件包括第一半导体层，第一半导体层上的凹坑放大层，凹坑放大层上的有源层，空穴注入层和空穴注入层上的第二半导体层。第一半导体层掺杂有第一导电类型。凹坑扩大层的上表面和活性层的侧表面限定了在位错上具有倾斜表面的凹坑。凹坑是反锥形空间。空穴注入层位于有源层的顶表面和凹坑的倾斜表面上。第二半导体层掺杂与第一导电类型不同的第二导电类型。

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