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61. 发明申请

US20110299097A1 FILM THICKNESS MEASUREMENT DEVICE AND MEASUREMENT METHOD 有权
标题翻译：薄膜厚度测量装置和测量方法
公开(公告)号：US20110299097A1
公开(公告)日：2011-12-08
申请号：US13201976
申请日：2010-01-20
申请人： Kenichi Ohtsuka , Tetsuhisa Nakano , Motoyuki Watanabe
发明人： Kenichi Ohtsuka , Tetsuhisa Nakano , Motoyuki Watanabe
IPC分类号： G01B11/28
CPC分类号： G01B11/0633 , G01B11/0683
摘要： A film thickness measurement apparatus 1A includes a measurement light source 28 that supplies measurement light containing a measurement light component with a first wavelength λ1 and a measurement light component with a second wavelength λ2 to a measuring object 15, a spectroscopic optical system 30 that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object 15 into an interfering light component with the first wavelength λ1 and an interfering light component with the second wavelength λ2, photodetectors 31 and 32 that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section 40. The film thickness analysis section 40 obtains a temporal change in film thickness of the measuring object 15 based on a phase difference between a first phase in a temporal change in detected intensity of the first interfering light component and a second phase in a temporal change in detected intensity of the second interfering light component. Accordingly, a film thickness measurement apparatus and a film thickness measurement method by which a temporal change in film thickness of a film-shaped measuring object can be accurately measured are realized.
摘要翻译：膜厚测量装置1A包括测量光源28，该测量光源28将包含第一波长λ1的测量光分量和具有第二波长λ2的测量光分量的测量光提供给测量对象15;分光光学系统30，其分解干涉来自上表面的反射光和来自测量对象15的下表面的反射光成为具有第一波长λ1的干涉光分量和具有第二波长λ2的干涉光分量，光电探测器31和32检测强度每个时间点的第一和第二干涉光分量以及膜厚度分析部分40.薄膜厚度分析部分40基于时间变化中的第一相位之间的相位差来获得测量对象15的膜厚度的时间变化在第一干涉光分量的检测强度在第二干涉光分量的检测强度的时间变化中相位相位。因此，可以实现膜厚测量装置和薄膜厚度测量方法，通过该方法能够精确地测量薄膜状测量对象的膜厚度的时间变化。

62. 发明授权

US07928469B2 MOSFET and method for manufacturing MOSFET 有权
标题翻译： MOSFET和MOSFET制造方法
公开(公告)号：US07928469B2
公开(公告)日：2011-04-19
申请号：US12090451
申请日：2006-10-06
申请人： Keiko Fujihira , Naruhisa Miura , Kenichi Ohtsuka , Masayuki Imaizumi
发明人： Keiko Fujihira , Naruhisa Miura , Kenichi Ohtsuka , Masayuki Imaizumi
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068
摘要： The present invention provides a MOSFET and so forth that offer high breakdown voltage and low on-state loss (high channel mobility and low gate threshold voltage) and that can easily achieve normally OFF. A drift layer 2 of a MOSFET made of silicon carbide according to the present invention has a first region 2a and a second region 2b. The first region 2a is a region from the surface to a first given depth. The second region 2b is formed in a region deeper than the first given depth. The impurity concentration of the first region 2a is lower than the impurity concentration of the second region 2b.
摘要翻译：本发明提供了提供高击穿电压和低导通状态损耗（高沟道迁移率和低栅极阈值电压）并且可以容易地实现正常关断的MOSFET等。根据本发明的由碳化硅制成的MOSFET的漂移层2具有第一区域2a和第二区域2b。第一区域2a是从表面到第一给定深度的区域。第二区域2b形成在比第一给定深度更深的区域中。第一区域2a的杂质浓度低于第二区域2b的杂质浓度。

63. 发明授权

US07796661B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07796661B2
公开(公告)日：2010-09-14
申请号：US12354984
申请日：2009-01-16
申请人： Kenichi Ohtsuka
发明人： Kenichi Ohtsuka
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/16 , H01S5/162 , H01S5/2004 , H01S5/22 , H01S5/3211
摘要： A semiconductor laser comprises: a semiconductor substrate and a lower cladding layer, an active layer, and an upper cladding layer on the semiconductor substrate. The layers form a resonator having opposed end surfaces. A ridge includes part of the upper cladding layer. The upper cladding layer in the ridge, proximate the resonator end surfaces, is thicker than the upper cladding layer in the ridge at a central part of the resonator.
摘要翻译：半导体激光器包括半导体衬底上的半导体衬底和下覆盖层，有源层和上覆层。这些层形成具有相对的端面的谐振器。脊包括上包层的一部分。靠近谐振器端面的脊中的上包层比谐振器中心部分的脊中的上包层厚。

64. 发明申请

US20090190622A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20090190622A1
公开(公告)日：2009-07-30
申请号：US12354984
申请日：2009-01-16
申请人： Kenichi Ohtsuka
发明人： Kenichi Ohtsuka
IPC分类号： H01S5/22
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/16 , H01S5/162 , H01S5/2004 , H01S5/22 , H01S5/3211
摘要： A semiconductor laser comprises: a semiconductor substrate and a lower cladding layer, an active layer, and an upper cladding layer on the semiconductor substrate. The layers form a resonator having opposed end surfaces. A ridge includes part of the upper cladding layer. The upper cladding layer in the ridge, proximate the resonator end surfaces, is thicker than the upper cladding layer in the ridge at a central part of the resonator.
摘要翻译：半导体激光器包括半导体衬底上的半导体衬底和下覆盖层，有源层和上覆层。这些层形成具有相对的端面的谐振器。脊包括上包层的一部分。靠近谐振器端面的脊中的上包层比谐振器中心部分的脊中的上包层厚。

65. 发明申请

US20090020766A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20090020766A1
公开(公告)日：2009-01-22
申请号：US12162998
申请日：2007-03-19
申请人： Kenichi Ohtsuka , Naruhisa Miura , Masayuki Imaizumi , Tatsuo Oomori
发明人： Kenichi Ohtsuka , Naruhisa Miura , Masayuki Imaizumi , Tatsuo Oomori
IPC分类号： H01L29/24
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/45 , H01L29/4925 , H01L29/4941 , H01L29/66068 , H01L29/7828
摘要： A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an SiC power device or the like in which a first metal layer containing at least one selected from the group consisting of Pt, Ti, Mo, W and Ta is formed on a source electrode formed on the semiconductor region, such as a source region or the like. A second metal layer containing at least one selected from the group consisting of Mo, W and Cu is formed on the first metal layer. A third metal layer containing at least one selected from the group consisting of Pt, Mo and W is formed on the second metal layer.
摘要翻译：功率半导体器件在其高温操作期间不容易引起用于互连的金属材料与连接到半导体区域的电极等之间的反应，并且在其高温操作期间不易于变形。功率半导体器件可以是在形成在半导体区域上的源电极上形成含有选自Pt，Ti，Mo，W和Ta中的至少一种的第一金属层的SiC功率器件等，例如源区域等。在第一金属层上形成含有选自Mo，W和Cu中的至少一种的第二金属层。在第二金属层上形成含有选自Pt，Mo和W中的至少一种的第三金属层。

66. 发明授权

US5020072A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5020072A
公开(公告)日：1991-05-28
申请号：US401745
申请日：1989-09-01
申请人： Yuji Abe , Hiroshi Sugimoto , Kenichi Ohtsuka , Toshiyuki Oishi , Teruhito Matsui
发明人： Yuji Abe , Hiroshi Sugimoto , Kenichi Ohtsuka , Toshiyuki Oishi , Teruhito Matsui
IPC分类号： H01S5/00 , H01S5/12
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/124 , H01S5/1243
摘要： A semiconductor laser device includes an active layer, a first semiconductor layer having a larger energy band gap than the active layer, a diffraction grating layer having a larger energy band gap than the active layer and a smaller energy band gap than the first semiconductor layer, and a second semiconductor layer having the same composition as the first semiconductor layer, successively grown on the active layer, parallel stripe grooves of predetermined period reaching the first semiconductor layer produced at the entire surface of the grown layers, a cladding layer having the same composition as the first semiconductor layer which is re-grown thereon, and a diffraction grating constituted by the remainder of the diffraction grating layer. The coupling coefficient of the light is determined by the film thickness of a layer produced between the active layer and the diffraction grating layer, and the amplitude of the diffraction grating is determined by the layer thickness of the diffraction grating layer. Therefore, the coupling coefficient can be set at a design value at high precision and at high reproducibility.
摘要翻译：半导体激光器件包括有源层，具有比有源层大的能带隙的第一半导体层，具有比有源层更大的能带隙的衍射光栅层和比第一半导体层更小的能带隙，以及具有与第一半导体层相同的组成的第二半导体层，在有源层上依次生长，在生长层的整个表面上到达第一半导体层的预定周期的平行条纹沟槽，具有相同组成的包覆层作为在其上重新生长的第一半导体层，以及由衍射光栅层的其余部分构成的衍射光栅。光的耦合系数由有源层和衍射光栅层之间产生的层的膜厚决定，衍射光栅的振幅由衍射光栅层的层厚决定。因此，可以以高精度和高重现性将耦合系数设定在设计值。

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