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61. 发明申请

US20080223286A1 Method for producing a semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US20080223286A1
公开(公告)日：2008-09-18
申请号：US12073178
申请日：2008-02-29
申请人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B23/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.
摘要翻译：本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐在x轴方向。因此，在m平面上存在支撑工具与晶种接触的三个接触点。支撑工具具有在垂直方向上延伸的两个支撑构件。一个支撑构件具有相对于水平面α倾斜30°的端部。在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

62. 发明申请

US20080217579A1 Light-emitting apparatus, phosphor and method of producing it 有权
标题翻译：发光装置，荧光体及其制造方法
公开(公告)号：US20080217579A1
公开(公告)日：2008-09-11
申请号：US12073794
申请日：2008-03-10
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： C09K11/62
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译：由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。荧光体由体积为2×800nm±3以下的细颗粒晶体形式的III-V族半导体形成。从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

63. 发明授权

US07419545B2 Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method 失效
标题翻译：通过这种方法制备碳化硅（SiC）单晶和碳化硅（SiC）单晶的方法
公开(公告)号：US07419545B2
公开(公告)日：2008-09-02
申请号：US10599035
申请日：2005-12-26
申请人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
发明人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
IPC分类号： C30B15/20
CPC分类号： C30B29/36 , C30B9/00 , C30B9/10 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. The alkali metal preferably is lithium (Li). With this method, silicon carbide single crystal can be produced even under low-temperature conditions of 1500° C. or lower, for example. The photograph of FIG. 3B is an example of a silicon carbide single crystal obtained by the method of the present invention.
摘要翻译：本发明提供可以以低成本制造大型碳化硅（SiC）单晶的制造方法。通过使硅（Si）和碳（C）在碱金属助熔剂中溶解和反应来生产或生长碳化硅单晶。碱金属优选为锂（Li）。通过该方法，即使在例如1500℃以下的低温条件下也可以制造碳化硅单晶。图的照片图3B是通过本发明的方法获得的碳化硅单晶的实例。

64. 发明授权

US07381268B2 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
公开(公告)号：US07381268B2
公开(公告)日：2008-06-03
申请号：US10587223
申请日：2005-04-27
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
IPC分类号： C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

65. 发明申请

US20070296061A1 Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 审中-公开
标题翻译： III族氮化物晶体基板及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20070296061A1
公开(公告)日：2007-12-27
申请号：US11578242
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota , Seiji Nakahata
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota , Seiji Nakahata
IPC分类号： H01L29/20 , C03B17/00
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

66. 发明授权

US07255742B2 Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device 有权
标题翻译：制造III族氮化物晶体的方法，制造半导体衬底的方法，III族氮化物晶体，半导体衬底和电子器件
公开(公告)号：US07255742B2
公开(公告)日：2007-08-14
申请号：US10884252
申请日：2004-07-02
申请人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B29/38
CPC分类号： C30B29/403 , C30B19/04 , C30B19/06 , C30B29/406
摘要： The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured efficiently, and are useful and usable as a substrate for semiconductor manufacturing processes. A semiconductor layer that is made of a semiconductor and includes crystal-nucleus generation regions at its surface is formed. The semiconductor is expressed by a composition formula of AluGavIn1-u-vN (where 0≦u≦1, 0≦v≦1, and u+v≦1). Group III nitride crystals then are grown on the semiconductor layer by bringing the crystal-nucleus generation regions of the semiconductor layer into contact with a melt in an atmosphere including nitrogen. The melt contains nitrogen, at least one Group III element selected from the group consisting of gallium, aluminum, and indium, and at least one of alkali metal and alkaline-earth metal.
摘要翻译：本发明提供一种制造高品质的III族氮化物晶体的方法，其有效制造，并且可用作半导体制造工艺的基板。形成由半导体构成的半导体层，其表面具有晶核生成区域。半导体由以下组成式表示：在1-uv N中（其中0 <= u <= 1,0，...， <= v <= 1，u + v <= 1）。然后通过在包括氮气的气氛中使半导体层的晶核生成区域与熔体接触，在半导体层上生长III族氮化物晶体。熔体含有氮，至少一种选自镓，铝和铟的III族元素，以及碱金属和碱土金属中的至少一种。

67. 发明申请

US20060223138A1 Method and apparatus for counting megakaryocytes 有权
标题翻译：计数巨核细胞的方法和装置
公开(公告)号：US20060223138A1
公开(公告)日：2006-10-05
申请号：US11392651
申请日：2006-03-30
申请人： Yusuke Mori , Toshihiro Mizukami , Tomohiro Tsuji , Yoshiro Ikeuchi
发明人： Yusuke Mori , Toshihiro Mizukami , Tomohiro Tsuji , Yoshiro Ikeuchi
IPC分类号： G01N33/48 , G01N1/30
CPC分类号： G01N15/147 , G01N33/5002 , G01N33/5094 , G01N33/80 , G01N2015/0073
摘要： A method for counting megakaryocytes in a specimen is described. In the method, first, erythrocytes in the specimen are lysed and nucleic acid in the megakaryocytes is stained with a fluorescent dye, and thereby, a measurement sample is prepared. Next, the cells in the measurement sample are irradiated with excited light so that the forward scattered light, the side scattered light and the fluorescence, which are emitted from the cells, are detected. Megakaryocytes are identified on the basis of the detected forward scattered light, the fluorescence and the side scattered light. Then, the identified megakaryocytes are counted.
摘要翻译：描述了一种用于计数样本中的巨核细胞的方法。在该方法中，首先将样品中的红细胞裂解，并用荧光染料染色巨核细胞中的核酸，由此制备测定样品。接下来，用激发光照射测量样品中的单元，从而检测从单元发射的前向散射光，侧向散射光和荧光。在检测到的前向散射光，荧光和侧向散射光的基础上鉴定巨核细胞。然后，计算鉴定的巨核细胞。

68. 发明申请

US20060102066A1 Method for preparing borate-based crystal and laser oscillation apparatus 有权
标题翻译：制备硼酸盐基晶体和激光振荡装置的方法
公开(公告)号：US20060102066A1
公开(公告)日：2006-05-18
申请号：US10545314
申请日：2004-02-13
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Muneyuki Nishioka , Satoru Fukumoto , Tomoyo Matsui , Takashi Saji
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Muneyuki Nishioka , Satoru Fukumoto , Tomoyo Matsui , Takashi Saji
IPC分类号： H01L21/322
CPC分类号： C30B35/007 , C01B35/12 , C30B11/02 , C30B29/22
摘要： A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.
摘要翻译：具有优异的均匀性和可靠性的硼酸盐基结晶，其可用作光波长转换装置等，并且可以在短时间内以低成本容易地制备，通过将水溶性原料溶解在水以制备水溶液，在水溶液中蒸发水，然后烧结或蒸发水而不烧结，从而形成晶体生长材料，并熔化所得材料以生长晶体。此外，通过使用该晶体作为光学波长转换装置，可以实现高可靠性的激光振荡装置。

69. 发明申请

US20050243548A1 Backlight unit including curved fluorescent lamp, and liquid crystal display apparatus including the backlight unit 有权
标题翻译：包括弯曲荧光灯的背光单元和包括背光单元的液晶显示装置
公开(公告)号：US20050243548A1
公开(公告)日：2005-11-03
申请号：US11112045
申请日：2005-04-22
申请人： Hirofumi Yamashita , Toshihiro Terada , Takashi Maniwa , Yusuke Mori
发明人： Hirofumi Yamashita , Toshihiro Terada , Takashi Maniwa , Yusuke Mori
IPC分类号： F21K2/00 , G02F1/1335 , G02F1/13357
CPC分类号： G02F1/133604 , G02F2001/133612
摘要： A backlight unit that includes: an outer container; a curved fluorescent lamp that is contained in the outer container and includes two electrodes and a glass bulb that has (i) a folded portion and (ii) two straight portions that extend in parallel with each other from the folded portion, and the two electrodes being respectively attached to two ends of the glass bulb; and an inverter operable to supply power for lighting to the curved fluorescent lamp. The inverter is disposed outside the outer container, and the curved fluorescent lamp is arranged so that the electrodes are at low positions and the folded portion is at a high position in the outer container when the backlight unit is erected vertically in use.
摘要翻译：一种背光单元，包括：外容器; 包含在外容器中并包括两个电极的弯曲荧光灯和具有（i）折叠部分和（ii）从折叠部分彼此平行延伸的两个直线部分的玻璃灯泡，并且两个电极分别连接在玻璃灯泡的两端; 以及可操作以向所述弯曲荧光灯供应用于照明的电力的逆变器。逆变器设置在外部容器的外侧，并且在背光单元在使用中垂直竖立时，弯曲的荧光灯被布置成电极处于低位置并且折叠部分处于外部容器中的高位置。

70. 发明申请

US20050225837A1 Wavelength conversion method, wavelength conversion device, and laser beam machine 有权
标题翻译：波长转换方法，波长转换装置和激光束机
公开(公告)号：US20050225837A1
公开(公告)日：2005-10-13
申请号：US10511170
申请日：2001-12-12
申请人： Tetsuo Kojima , Susumu Konno , Shuichi Fujikawa , Koji Yasui , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura
发明人： Tetsuo Kojima , Susumu Konno , Shuichi Fujikawa , Koji Yasui , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura
IPC分类号： G02F1/35 , G02F2/02
CPC分类号： G02F1/3501 , G02F2001/3505
摘要： In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.
摘要翻译：在波长转换方法中，与输出波长转换光的非线性光学晶体的表面接触的环境是氮含量低于空气的气体。波长转换装置包括用于控制与非线性光学晶体的表面接触的环境的装置，从该波长转换光输出波长转换的光，使得氮气中的环境比空气低。激光加工装置包括波长转换装置。

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