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61. 发明授权

US5958155A Process for producing thin film 失效
标题翻译：薄膜生产工艺
公开(公告)号：US5958155A
公开(公告)日：1999-09-28
申请号：US683195
申请日：1996-07-18
申请人： Ken Kawamata , Nobuaki Mitamura
发明人： Ken Kawamata , Nobuaki Mitamura
IPC分类号： C23C14/06 , C23C14/34 , C23C14/35 , C23C14/40 , C30B25/06 , G02B1/10 , G02B1/113 , C22C23/00
CPC分类号： C23C14/3421 , C23C14/06 , C23C14/35 , C23C14/352
摘要： A substrate (2) is rotatably installed in a vacuum chamber (1) at an upper part thereof MgF.sub.2 granules (3) as a film source material are placed in a quartz boat (4) and mounted on a magnetron cathode (5). The magnetron cathode (5) is connected through a matching box (6) to a 13.56 MHz radio frequency power source (7). Cooling water (8) for holding the temperature of the magnetron cathode (5) constant flows against a lower face of the magnetron cathode (5). A side wall of the vacuum chamber (1) is provided with gas introduction ports (9), (10) for introducing gas in the vacuum chamber (1). A shutter (11) is placed between the magnetron cathode (5) and the substrate (2). This structure provides a process enabling forming a thin film at a high speed by sputtering, especially a high speed sputtering process enabling forming a thin fluoride film free of light absorption.
摘要翻译：将基板（2）可旋转地安装在其上部的真空室（1）中，将作为膜源材料的MgF 2颗粒（3）放置在石英舟（4）中并安装在磁控阴极（5）上。磁控管阴极（5）通过匹配盒（6）连接到13.56MHz射频电源（7）。用于保持磁控阴极（5）的温度的冷却水（8）恒定地流过磁控阴极（5）的下表面。真空室（1）的侧壁设置有用于在真空室（1）中引入气体的气体导入口（9），（10）。在磁控管阴极（5）和基板（2）之间放置有快门（11）。该结构提供了能够通过溅射高速形成薄膜的方法，特别是能够形成不含光吸收的氟化物薄膜的高速溅射工艺。

62. 发明授权

US5887015A Heater mechanism for crystal pulling apparatus 失效
标题翻译：拉晶机加热机构
公开(公告)号：US5887015A
公开(公告)日：1999-03-23
申请号：US763883
申请日：1996-12-11
申请人： Nobuaki Mitamura , Toshiharu Uesugi , Atsushi Iwasaki , Shinobu Takeyasu
发明人： Nobuaki Mitamura , Toshiharu Uesugi , Atsushi Iwasaki , Shinobu Takeyasu
IPC分类号： C30B15/14 , C03B5/027
CPC分类号： C30B15/14
摘要： A heater mechanism for a crystal pulling apparatus is disclosed. Electrodes made of copper or the like and disposed under a heater are connected to the heater via graphite members. A cover member is attached to each graphite member, so that the downwardly extending portion of the cover member surrounds the outer surface of the graphite member. Accordingly, a leak or splash of a melt is prevented from contacting the electrodes. The length of each graphite member is equal to or greater than the distance between the bottom surface of the heater and the top surface of a melt spill tray which distance is measured when the heater mechanism is raised The cover member is vertically slidable along the outer surface of each graphite member. Thus, even when a material melt leaks out from a crucible, the electrodes of the heater mechanism can be protected from a fusion damage or the like which would be otherwise caused by the leak of the melt.
摘要翻译：公开了一种用于晶体拉制装置的加热器机构。设置在加热器下方的由铜等制成的电极通过石墨部件连接到加热器。盖构件附接到每个石墨构件，使得盖构件的向下延伸的部分围绕石墨构件的外表面。因此，防止熔体的泄漏或飞溅与电极接触。每个石墨构件的长度等于或大于加热器的底表面和熔体溢出托盘的上表面之间的距离，该加热器机构升高时测量的距离。盖构件沿着外表面可垂直滑动的每个石墨构件。因此，即使当材料熔体从坩埚中泄漏出来时，也可以保护加热器机构的电极免受由熔体泄漏引起的熔融损伤等的影响。

63. 发明授权

US5672014A Rolling bearings 失效
标题翻译：滚动轴承
公开(公告)号：US5672014A
公开(公告)日：1997-09-30
申请号：US536773
申请日：1995-09-29
申请人： Shigeru Okita , Nobuaki Mitamura , Susumu Tanaka , Kenji Yamamura , Manabu Ohori
发明人： Shigeru Okita , Nobuaki Mitamura , Susumu Tanaka , Kenji Yamamura , Manabu Ohori
IPC分类号： C22C38/00 , C22C38/18 , C23C8/32 , F16C33/30 , F16C33/32 , F16C33/62 , F16C33/64 , F16C33/44
CPC分类号： C23C8/32 , F16C33/62 , F16C33/64 , F16C33/303 , F16C33/32 , Y10S384/912 , Y10S384/913 , Y10T428/31678
摘要： A rolling bearing has components of an inner race, an outer race and rolling elements, one of the components being formed of an alloy steel containing 0.1-1.0 wt % of C, 0.1-1.5 wt % of Si, 0.1-1.5 wt % of Mn and 0.1-3.0 wt % of Cr, the alloy steel being carbonitrided and then ground to form a surface layer having a carbon and a nitrogen concentration of 0.6-1.5 wt % and 0.05-0.9 wt %, respectively. The surface layer has an appropriate amount of retained austenite .gamma..sub.R and is sufficiently hard to insure long life even under lubrication in the presence of foreign matter. By optimizing the choice of constituent materials, processing methods and heat treatments for each of the rolling elements and the inner and outer races, rolling bearings that have high performance can be produced at low cost.
摘要翻译：滚动轴承具有内圈，外圈和滚动元件的部件，其中一个部件由含有0.1-1.0重量％的C，0.1-1.5重量％的Si，0.1-1.5重量％的Si， Mn和0.1-3.0重量％的Cr，合金钢被碳氮共混，然后研磨以形成碳和氮浓度分别为0.6-1.5重量％和0.05-0.9重量％的表面层。表面层具有合适量的残留奥氏体γR，并且即使在异物存在下的润滑下也足够坚固以确保长寿命。通过优化各滚动元件和内外圈的构成材料，加工方法和热处理的选择，可以低成本地制造具有高性能的滚动轴承。

64. 发明授权

US5626974A Rolling bearing for use under high temperature conditions 失效
标题翻译：滚动轴承在高温条件下使用
公开(公告)号：US5626974A
公开(公告)日：1997-05-06
申请号：US519643
申请日：1995-08-25
申请人： Nobuaki Mitamura
发明人： Nobuaki Mitamura
IPC分类号： C21D1/18 , C21D9/40 , C23C8/22 , C23C8/32 , F16C33/30 , F16C33/62
CPC分类号： F16C33/30 , C21D9/40 , C23C8/22 , C23C8/32 , F16C33/62 , C21D1/18 , Y10S148/906 , Y10S384/912 , Y10T428/31678
摘要： In a rolling bearing including an inner race, an outer race and a plurality of rolling elements in which at least one member of the inner race, the outer race and the rolling elements is made of a high carbon steel material and has a Rockwell hardness of H.sub.R C 60 or more, the high carbon steel material including, in a surface thereof, solid solution of carbon C and solid solution of nitrogen N which are adjusted to satisfy relationships of 0.8 wt %.ltoreq.C.ltoreq.1.2 wt % and 0.1 wt %.ltoreq.N.ltoreq.0.5 wt % with the balance Fe, and in which the retained austenite existing in the high carbon steel material is adjusted to substantially 0 wt %, the rolling beating exhibits superior dimensional stability and high endurance even when it is used under high-temperature conditions, and exhibits high productivity with low cost.
摘要翻译：在包括内圈，外圈和多个滚动元件的滚动轴承中，内圈，外圈和滚动元件的至少一个构件由高碳钢材料制成，并且具有洛氏硬度 HRC 60以上，高碳钢材料在其表面包括碳C和氮气固体N的固溶体，其被调节以满足0.8重量％C = 1.2重量％和0.1重量％的关系重量％

65. 发明授权

US5427457A Rolling bearing 失效
标题翻译：滚动轴承
公开(公告)号：US5427457A
公开(公告)日：1995-06-27
申请号：US134588
申请日：1993-10-12
申请人： Kyozaburo Furumura , Yasuo Murakami , Nobuaki Mitamura , Shinichi Shirota , Shigeru Okita , Kazuo Sekino
发明人： Kyozaburo Furumura , Yasuo Murakami , Nobuaki Mitamura , Shinichi Shirota , Shigeru Okita , Kazuo Sekino
IPC分类号： C21D1/78 , C21D6/00 , C21D9/36 , C21D9/40 , C23C8/32 , C23C8/80 , F16C33/30 , F16C33/32 , F16C33/34 , F16C33/62 , F16C19/00
CPC分类号： F16C33/32 , C21D9/36 , C21D9/40 , C23C8/32 , C23C8/80 , F16C33/30 , F16C33/34 , F16C33/62 , C21D1/78 , C21D2211/001 , C21D6/002 , Y10S384/912 , Y10S384/913
摘要： An object of this invention is to provide a rolling bearing in which, as for the rolling elements, it is unnecessary to employ a high level heat treatment such as carburizing or carbonitriding which requires a long period of time to achieve, and which is sufficiently long in service life even when used with a lubricant containing foreign matters. In a rolling bearing, the amount of residual austenite (.gamma..sub.R vol %) in the surface layer of at least one of the inner and outer races is in a range of 25 to 40 vol %, and the surface hardness (Hv) thereof meets the following condition:-4.7.times.(.gamma..sub.R vol %)+900.ltoreq.Hv.ltoreq.-4.7.times.(.gamma..sub.R vol %)+1000and the hardness of the rolling elements combined with the inner and outer races is higher by H.sub.R C 1 to 2 than that of the one of the inner and outer races.
摘要翻译：本发明的目的是提供一种滚动轴承，其中对于滚动元件，不需要采用需要较长时间来实现并且足够长的高渗透度或碳氮共渗的高水平热处理使用寿命即使与含有外来物质的润滑剂一起使用。在滚动轴承中，至少一个内圈和外圈的表层中的残余奥氏体量（γR vol％）在25〜40vol％的范围内，其表面硬度（Hv）满足以下条件：-4.7倍（γR vol％）+ 900

66. 发明授权

US5085733A Rolling steel bearing 失效
标题翻译：滚动轴承
公开(公告)号：US5085733A
公开(公告)日：1992-02-04
申请号：US572480
申请日：1990-08-23
申请人： Nobuaki Mitamura
发明人： Nobuaki Mitamura
IPC分类号： C22C38/18
CPC分类号： C22C38/18 , F16C33/32 , F16C33/62 , Y10S148/906
摘要： A rolling contact parts steel has C: 0.2-0.6 wt%; Si: 0.3-2.0 wt%; Cr: 0.5-2.5 wt%; Mn: 1.7 wt% or less; O: 12 ppm or less; and the balance of Fe and an inevitable impurity. The steel produces a fine carbide without the need for a separate heat treatment. The dimensioal stability at high temperature of the steel is superior. A rolling bearing has at least one of the races and the rolling element thereof made of the steel, the steel being carburized or carbonitrided, then quenched and then, finally, tempered. The one of the races and the rolling element will not soften at a high temperature.
摘要翻译：滚动接触部件钢具有C：0.2-0.6重量％ Si：0.3〜2.0重量％ Cr：0.5〜2.5重量％ Mn：1.7重量％以下; O：12ppm以下; 而Fe的余量和不可避免的杂质。该钢生产精细的碳化物，而不需要单独的热处理。钢的高温尺寸稳定性优异。滚动轴承具有由钢制成的种类和滚动体中的至少一种，钢被渗碳或碳氮共混，然后淬火，然后最终回火。其中一个种族和滚动体不会在高温下软化。

67. 发明申请

US20130125810A1 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL 有权
标题翻译：用于制造半导体单晶的装置和方法
公开(公告)号：US20130125810A1
公开(公告)日：2013-05-23
申请号：US13813551
申请日：2011-07-06
申请人： Shou Takashima , Yuuichi Miyahara , Atsushi Iwasaki , Nobuaki Mitamura , Susumu Sonokawa
发明人： Shou Takashima , Yuuichi Miyahara , Atsushi Iwasaki , Nobuaki Mitamura , Susumu Sonokawa
IPC分类号： C30B15/14 , C30B15/30
CPC分类号： C30B15/14 , C30B15/30 , C30B29/06 , Y10T117/1068
摘要： The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.
摘要翻译：本发明是一种半导体单晶制造装置，其包括在生长炉主体内的坩埚和设置在坩埚周围的加热器，其中，绝热筒设置在生长炉主体内的加热器周围，绝热气缸包括将绝热筒分成其内表面的上部和下部的台阶部分，下部的内径大于上部的内径，隔热板设置在加热器，并且在生长炉主体内的隔热筒的下部的内侧，绝热板的直径大于绝热筒的上部的内径，并且小于内部下部直径。

68. 发明申请

US20100031869A1 System for Manufacturing Silicon Single Crystal and Method for Manufacturing Silicon Single Crystal Using this System 审中-公开
标题翻译：使用该系统制造硅单晶的系统和制造硅单晶的方法
公开(公告)号：US20100031869A1
公开(公告)日：2010-02-11
申请号：US12308122
申请日：2007-05-28
申请人： Makoto Iida , Nobuaki Mitamura , Takahiro Yanagimachi
发明人： Makoto Iida , Nobuaki Mitamura , Takahiro Yanagimachi
IPC分类号： C30B15/20
CPC分类号： C30B15/203 , C30B29/06 , C30B35/00
摘要： The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in the subsequent batch. As a result, there can be provided the system for manufacturing a silicon single crystal that can more assuredly obtain a silicon single crystal having a desired crystal quality and improve productivity or a yield and a method for manufacturing a silicon single crystal using this system.
摘要翻译：本发明提供了一种制造硅单晶的系统，其设计了将F / G的值控制在规定范围内的制造条件，以使由使用 CZ方法属于目标标准，至少包括：1，从上一批硅晶单晶的晶体质量结果出发，初步设计后续批次中硅单晶的制造条件; 装置2根据后续批次中的牵引装置的构成部件从F和/或G的变化量计算校正量; 意味着3根据后续批次中的制造过程从F和/或G的变化量计算校正量; 以及通过装置1将装置2和/或装置3的校正量加到制造条件的装置4，以计算后续批次中的制造条件。结果，可以提供一种制造硅单晶的系统，其可以更可靠地获得具有期望的晶体质量的硅单晶并且提高生产率或产率，以及使用该系统制造单晶硅的方法。

69. 发明申请

US20090038713A1 ROLLING APPARATUS 有权
标题翻译：滚动装置
公开(公告)号：US20090038713A1
公开(公告)日：2009-02-12
申请号：US12293189
申请日：2007-05-16
申请人： Koji Ueda , Toru Ueda , Naoya Seno , Nobuaki Mitamura
发明人： Koji Ueda , Toru Ueda , Naoya Seno , Nobuaki Mitamura
IPC分类号： C23C8/26 , C23C8/32
CPC分类号： C22C38/02 , C21D1/06 , C21D1/10 , C21D9/40 , C21D2211/001 , C21D2211/008 , C22C38/04 , C22C38/18 , C23C8/26 , C23C8/32 , F16C19/06 , F16C19/364 , F16C29/0647 , F16C33/32 , F16C33/34 , F16C33/62 , F16C33/64 , Y02P10/253 , Y10S148/906
摘要： A rolling apparatus including an external member having a raceway surface on an inner peripheral surface thereof, an internal member having a raceway surface on an outer peripheral surface thereof, and a plurality of rolling elements which are rotatably provided between the raceway surface of the external member and the raceway surface of the internal member. A surface of at least one of the internal member, the external member, and the rolling elements is subjected to carbonitriding or nitriding; an area percentage of a nitride containing Si and Mn is 1% or more and 20% or less; surface hardness is HV750 or more. When depth from the raceway surface or depth from a rolling surface of the rolling element is defined as Z and diameter of the rolling element is defined as d, hardness at Z=0.045 d is HV650 to 850, and hardness at Z=0.18 d is HV400 to 800.
摘要翻译：一种滚动装置，包括在其内周面上具有滚道面的外部构件，在其外周面上具有滚道面的内部构件，以及多个滚动体，其可旋转地设置在外部构件的滚道面之间和内部构件的轨道面。内部构件，外部构件和滚动体中的至少一个的表面经受碳氮共渗或氮化; 含有Si和Mn的氮化物的面积百分比为1％以上20％以下; 表面硬度为HV750以上。当从滚道表面的深度或滚动体的滚动面的深度定义为Z，滚动体的直径为d时，Z = 0.045d的硬度为HV650〜850，Z = 0.18d的硬度为 HV400至800。

70. 发明授权

US07326395B2 Method for producing a single crystal and silicon single crystal wafer 有权
标题翻译：单晶和硅单晶晶片的制造方法
公开(公告)号：US07326395B2
公开(公告)日：2008-02-05
申请号：US10568186
申请日：2004-08-13
申请人： Izumi Fusegawa , Nobuaki Mitamura , Takahiro Yanagimachi
发明人： Izumi Fusegawa , Nobuaki Mitamura , Takahiro Yanagimachi
IPC分类号： C01B33/26
CPC分类号： C30B15/20 , C30B29/06 , Y10T117/1068
摘要： The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw material melt 2 with a gas flow-guide cylinder 4, wherein when a single crystal within N region outside OSF region generated in a ring shape in the radial direction of the single crystal is pulled, the single crystal within N region is pulled in a condition that flow amount of the inert gas between the single crystal and the gas flow-guide cylinder is 0.6 D(L/min) or more and pressure in the chamber is 0.6 D(hPa) or less, in which D (mm) is a diameter of the single crystal to be pulled. It is preferable that there is used the gas flow-guide cylinder that Fe concentration is 0.05 ppm or less, at least, in a surface thereof. Thereby, there is provided a method for producing a single crystal, wherein in the case that a single crystal is produced by an apparatus having a gas flow-guide cylinder in accordance with CZ method, the single crystal has low defect density and Fe concentration can be suppressed to be 1×1010 atoms/cm3 or less even in a peripheral part thereof.
摘要翻译：本发明是一种根据切克劳斯基法制造单晶的方法，该方法是使惰性气体在单晶拉制装置11的室1中向下流动，并围绕从原料熔体2拉出的单晶3与气体流动引导圆筒4，其中当拉伸在单晶体的径向方向上以环形产生的OSF区域外的N区域内的单晶时，N区域内的单晶在惰性流动量的条件下被拉单晶和气体导流筒之间的气体为0.6D（L / min）以上，室内的压力为0.6D（hPa）以下，其中D（mm）为单晶直径被拉。至少在其表面中优选使用气体导向气缸Fe浓度为0.05ppm以下。因此，提供了一种单晶的制造方法，其中，在通过具有根据CZ法的气体导向筒的装置制造单晶的情况下，单晶的缺陷密度低，Fe浓度可以即使在其周边部分被抑制为1×10 10原子/ cm 3以下。

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