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61. 发明授权

US08882935B2 Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition 有权
标题翻译：通过金属有机化学气相沉积制造非极性氮化铟镓薄膜，异质结构和器件
公开(公告)号：US08882935B2
公开(公告)日：2014-11-11
申请号：US13909775
申请日：2013-06-04
申请人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L33/16 , H01L21/02 , H01S5/343 , B82Y20/00 , H01L33/00 , C30B29/40 , C30B25/02 , H01L33/06 , H01S5/32 , H01S5/02
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译：制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

62. 发明授权

US08502246B2 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition 有权
公开(公告)号：US08502246B2
公开(公告)日：2013-08-06
申请号：US12370479
申请日：2009-02-12
申请人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L33/18 , H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

63. 发明授权

US08455885B2 Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition 有权
标题翻译：高品质N面氮化镓，氮化铟和氮化铝及其合金的金属有机化学气相沉积异质外延生长方法
公开(公告)号：US08455885B2
公开(公告)日：2013-06-04
申请号：US13444011
申请日：2012-04-11
申请人： Stacia Keller , Umesh K. Mishra , Nicholas A. Fichtenbaum
发明人： Stacia Keller , Umesh K. Mishra , Nicholas A. Fichtenbaum
IPC分类号： H01L33/00
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/02573 , H01L21/0262
摘要： Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
摘要翻译：公开了通过MOCVD生长的N面GaN薄膜的平滑，高质量薄膜异质外延生长的方法。使用错误取向的衬底并且可能使衬底氮化使得能够生长平滑的N面GaN和其他III族氮化物膜，如本文所公开的。本发明还避免了使得N面GaN材料不适合于器件应用的典型的大（母体尺寸）六角形特征。本发明允许平滑，高质量的膜的生长，这使得N面装置的发展成为可能。

64. 发明申请

US20120180868A1 III-NITRIDE FLIP-CHIP SOLAR CELLS 审中-公开
标题翻译： III-NITRIDE FLIP-CHIP太阳能电池
公开(公告)号：US20120180868A1
公开(公告)日：2012-07-19
申请号：US13279131
申请日：2011-10-21
申请人： Robert M. Farrell , Carl J. Neufeld , Nikholas G. Toledo , Steven P. DenBaars , Umesh K. Mishra , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell , Carl J. Neufeld , Nikholas G. Toledo , Steven P. DenBaars , Umesh K. Mishra , James S. Speck , Shuji Nakamura
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/02366 , H01L31/056 , H01L31/0735 , H01L31/075 , H01L31/076 , H01L31/1848 , H01L31/1852 , Y02E10/52 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A III-nitride photovoltaic device structure and method for fabricating the III-nitride photovoltaic device that increases the light collection efficiency of the III-nitride photovoltaic device. The III-nitride photovoltaic device includes one or more III-nitride device layers, and the III-nitride photovoltaic device functions by collecting light that is incident on the back-side of the III-nitride device layers. The III-nitride device layers are grown on a substrate, wherein the III-nitride device layers are exposed when the substrate is removed and the exposed III-nitride device layers are then intentionally roughened to enhance their light collection efficiency. The collection of the incident light via the back-side of the device simplifies the fabrication of the multiple junctions in the device. The III-nitride photovoltaic device may include grid-like contacts, transparent or semi-transparent contacts, or reflective contacts.
摘要翻译：用于制造III族氮化物光伏器件的III族氮化物光伏器件结构和方法，其增加了III族氮化物光伏器件的光收集效率。 III族氮化物光伏器件包括一个或多个III族氮化物器件层，并且III族氮化物光伏器件通过收集入射在III族氮化物器件层的背面上的光而起作用。 III族氮化物器件层在衬底上生长，其中当除去衬底时，III族氮化物器件层被暴露，然后有意地暴露暴露的III族氮化物器件层以增强它们的光收集效率。通过设备背面的入射光的收集简化了器件中多个结的制造。 III族氮化物光伏器件可以包括格栅状触点，透明或半透明触点或反射触点。

65. 发明授权

US07982208B2 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices 有权
标题翻译：非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件
公开(公告)号：US07982208B2
公开(公告)日：2011-07-19
申请号：US11472033
申请日：2006-06-21
申请人： Michael D. Craven , Stacia Keller , Steven P. Denbaars , Tal Margalith , James Stephen Speck , Shuji Nakamura , Umesh K. Mishra
发明人： Michael D. Craven , Stacia Keller , Steven P. Denbaars , Tal Margalith , James Stephen Speck , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L31/00
CPC分类号： C30B29/403 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/406 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.
摘要翻译：一种形成非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的方法。使用MOCVD在非平面（1120）蓝宝石衬底上生长非极性（11 20）a面GaN层。这些非极性（11 20）a面GaN层包括用于产生非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的模板。

66. 发明申请

US20090246944A1 METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AlN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION 有权
标题翻译：高品质N面GaN，InN，AlN及其合金的金属有机化学气相沉积的异相生长方法
公开(公告)号：US20090246944A1
公开(公告)日：2009-10-01
申请号：US12466705
申请日：2009-05-15
申请人： Stacia Keller , Umesh K. Mishra , Nicholas K. Fichtenbaum
发明人： Stacia Keller , Umesh K. Mishra , Nicholas K. Fichtenbaum
IPC分类号： H01L21/205
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/02573 , H01L21/0262
摘要： Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
摘要翻译：公开了通过MOCVD生长的N面GaN薄膜的平滑，高质量薄膜异质外延生长的方法。使用错误取向的衬底并且可能使衬底氮化使得能够生长平滑的N面GaN和其他III族氮化物膜，如本文所公开的。本发明还避免了使得N面GaN材料不适合于器件应用的典型的大（母体尺寸）六角形特征。本发明允许平滑，高质量的膜的生长，这使得N面装置的发展成为可能。

67. 发明申请

US20090218599A1 POLARIZATION-INDUCED BARRIERS FOR N-FACE NITRIDE-BASED ELECTRONICS 失效
标题翻译：用于基于N面的氮化物电极的极化诱导障碍
公开(公告)号：US20090218599A1
公开(公告)日：2009-09-03
申请号：US12127661
申请日：2008-05-27
申请人： Umesh K. Mishra , Tomas A. Palacios Gutierrez , Man Hoi Wong
发明人： Umesh K. Mishra , Tomas A. Palacios Gutierrez , Man Hoi Wong
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A method for fabricating a potential barrier for a nitrogen-face (N-face) nitride-based electronic device, comprising using a thickness and polarization induced electric field of a III-nitride interlayer, positioned between a first III-nitride layer and a second III-nitride layer, to shift, e.g., raise or lower, the first III-nitride layer's energy band with respect to the second III-nitride layer's energy band by a pre-determined amount. The first III-nitride layer and second III-nitride layer each have a higher or lower polarization coefficient than the III-nitride interlayer's polarization coefficient.
摘要翻译：一种用于制造氮 - 面（N面）氮化物基电子器件的势垒的方法，包括使用位于第一III族氮化物层和第二层氮化物层之间的III族氮化物中间层的厚度和极化感应电场 III族氮化物层相对于第二III族氮化物层的能带移动（例如）升高或降低第一III族氮化物层的能带预定量。第一III族氮化物层和第二III族氮化物层各自具有比III族氮化物夹层的极化系数更高或更低的偏振系数。

68. 发明授权

US07525130B2 Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same 有权
标题翻译：极化掺杂场效应晶体管（POLFETS）及其制作方法
公开(公告)号：US07525130B2
公开(公告)日：2009-04-28
申请号：US11241804
申请日：2005-09-29
申请人： Umesh K. Mishra , Huili Xing , Debdeep Jena , Siddharth Rajan
发明人： Umesh K. Mishra , Huili Xing , Debdeep Jena , Siddharth Rajan
IPC分类号： H01L31/00
CPC分类号： H01L29/812 , H01L29/1029 , H01L29/2003 , H01L29/7783 , H01L29/7787
摘要： Novel GaN/AlGaN metal-semiconductor field-effect transistor (MESFET) structures grown without any impurity doping in the channel. A high-mobility polarization-induced bulk channel charge is created by grading the channel region linearly from GaN to Al0.3Ga0.7N over a distance, e.g., 1000 Å. A polarization-doped field effect transistor (PolFET) was fabricated and tested under DC and RF conditions. A current density of 850 mA/mm and transconductance of 93 mS/mm was observed under DC conditions. Small-signal characterization of 0.7 μm gate length devices had a cutoff frequency, fτ=19 GHz, and a maximum oscillation of fmax=46 GHz. The PolFETs perform better than comparable MESFETs with impurity-doped channels, and are suitable for high microwave power applications. An important advantage of these devices over AlGaN/GaN HEMTs is that the transconductance vs. gate voltage profile can be tailored by compositional grading for better large-signal linearity.
摘要翻译：新型GaN / AlGaN金属半导体场效应晶体管（MESFET）结构在通道中没有任何杂质掺杂生长。通过在一定距离（例如）1000处将通道区域从GaN线性地分级至Al 0.3 Ga 0.7 N来产生高迁移率极化诱导的体沟道电荷。在DC和RF条件下制造和测试偏振掺杂场效应晶体管（PolFET）。在直流条件下观察到电流密度为850mA / mm，跨导为93mS / mm。 0.7mm门极长度器件的小信号表征具有截止频率ftau = 19GHz，fmax = 46GHz的最大振荡。 PolFET比具有杂质掺杂通道的可比MESFET性能更好，适用于高微波功率应用。这些器件对AlGaN / GaN HEMT的一个重要优点是跨导与栅极电压分布可以通过组合分级来定制，以获得更好的大信号线性度。

69. 发明申请

US20080308813A1 HIGH BREAKDOWN ENHANCEMENT MODE GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH INTEGRATED SLANT FIELD PLATE 审中-公开
标题翻译：具有集成的SLANT现场板的高突变增强型基于氮化镓的高电子移动晶体管
公开(公告)号：US20080308813A1
公开(公告)日：2008-12-18
申请号：US11841476
申请日：2007-08-20
申请人： Chang Soo Suh , Yuvaraj Dora , Umesh K. Mishra
发明人： Chang Soo Suh , Yuvaraj Dora , Umesh K. Mishra
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66462
摘要： High breakdown enhancement mode gallium nitride (GaN) based high electron mobility transistors (HEMTs) with integrated slant field plates. These HEMTs have an epilayer structure comprised of AlGaN/GaN buffer. Before the formation of the gate electrode, a passivation layer is deposited, and then the opening for the gate is patterned. The passivation layer below the gate is etched using an etch condition that creates a slanted sidewalls. Then, the charge below the channel is removed either by Fluorine-based plasma treatment and/or by a recess etch. The gate metal is deposited with an angled rotation to form a gate structure with an inherent field plate with rounded edges.
摘要翻译：具有集成倾斜场板的高击穿增强型氮化镓（GaN）基高电子迁移率晶体管（HEMT）。这些HEMT具有由AlGaN / GaN缓冲层构成的外延层结构。在形成栅电极之前，沉积钝化层，然后对栅极的开口进行图案化。使用产生倾斜侧壁的蚀刻条件蚀刻栅极下方的钝化层。然后，通过氟基等离子体处理和/或通过凹陷蚀刻除去通道下面的电荷。栅极金属以成角度的旋转沉积以形成具有带有圆形边缘的固有场板的栅极结构。

70. 发明申请

US20080296618A1 P-GaN/AlGaN/AlN/GaN ENHANCEMENT-MODE FIELD EFFECT TRANSISTOR 有权
标题翻译： P-GaN / AlGaN / AlN / GaN增强型场效应晶体管
公开(公告)号：US20080296618A1
公开(公告)日：2008-12-04
申请号：US12131704
申请日：2008-06-02
申请人： Chang Soo Suh , Umesh K. Mishra
发明人： Chang Soo Suh , Umesh K. Mishra
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/432 , H01L29/66462
摘要： An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron population under the gate. The HEMT may also comprise an Aluminum Nitride (AlN) layer between an AlGaN layer and buffer layer of the HEMT to reduce an on resistance of a channel.
摘要翻译：一种增强型高电子迁移率晶体管（HEMT），其包括在HEMT的栅极和沟道之间的p型氮化物层，用于减少栅极下的电子群。 HEMT还可以在AlGaN层和HEMT的缓冲层之间包含氮化铝（AlN）层，以降低通道的导通电阻。

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