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61. 发明申请

US20060151291A1 Conveyor for sheet-shaped thin plate and method of conveying same 有权
公开(公告)号：US20060151291A1
公开(公告)日：2006-07-13
申请号：US11219758
申请日：2005-09-07
申请人： Hideyuki Kai , Manabu Kobayashi , Masahiro Ogawa , Ryoichi Kimura , Sachio Kishino , Kenji Tsukamoto
发明人： Hideyuki Kai , Manabu Kobayashi , Masahiro Ogawa , Ryoichi Kimura , Sachio Kishino , Kenji Tsukamoto
IPC分类号： B65G47/24
CPC分类号： B23K26/26 , B23K26/0846 , B23K37/047 , B23K2101/185
摘要： A conveyor for guiding and conveying a plurality of sheet-shaped thin plates in rows arranged side by side to a welding position at which ends of the adjacent thin plates are butted and welded to each other, includes a plurality of conveying paths, which are adjacent to each other, having different conveying surfaces which are placed on a same horizontal plane, and a guide unit disposed between the adjacent two conveying paths for guiding the thin plates on one of the conveying paths with respect to another one thereof toward the welding position. Each of the conveying paths is composed of a plurality conveying rollers, and the guide unit includes guide rollers each having a guide surface for guiding the thin plate on the one of the conveying paths in a state that the thin plate on the one conveying path is partially depressed with respect to the another one of the conveying path.

62. 发明申请

US20050285263A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050285263A1
公开(公告)日：2005-12-29
申请号：US11153412
申请日：2005-06-16
申请人： Masahiro Ogawa
发明人： Masahiro Ogawa
IPC分类号： H01L23/34 , H01L25/065
CPC分类号： H01L25/0657 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/06562 , H01L2225/06575 , H01L2225/06586 , H01L2924/09701 , H01L2924/15311 , H01L2924/19103 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor device includes a substrate (1) where a plurality of wiring patterns are formed, a first semiconductor chip (3) mounted on one surface of the substrate (1), a spacer (4) which is mounted on the substrate (1) and adjacent to the first semiconductor chip (3), and a second semiconductor chip (6) mounted on one surface of the first semiconductor chip (3) and one surface of the spacer (4). The first semiconductor chip (3) composed of two or more elements and the spacer (4), on which pads (21) used for thermal dissipation and semiconductor elements (22) are mounted, are simultaneously formed in the diffusion process of a semiconductor wafer.
摘要翻译：半导体器件包括其中形成多个布线图案的基板（1），安装在基板（1）的一个表面上的第一半导体芯片（3），安装在基板（1）上的间隔物（4）并且与第一半导体芯片（3）相邻，以及安装在第一半导体芯片（3）的一个表面和间隔物（4）的一个表面上的第二半导体芯片（6）。在半导体晶片的扩散过程中同时形成由两个或更多个元件组成的第一半导体芯片（3）和用于散热的衬垫（21）和半导体元件（22）的衬垫（4）。

63. 发明授权

US06723165B2 Method for fabricating Group III nitride semiconductor substrate 失效
标题翻译：制备III族氮化物半导体衬底的方法
公开(公告)号：US06723165B2
公开(公告)日：2004-04-20
申请号：US10118924
申请日：2002-04-10
申请人： Masahiro Ogawa , Masahiro Ishida , Satoshi Tamura , Shinichi Takigawa
发明人： Masahiro Ogawa , Masahiro Ishida , Satoshi Tamura , Shinichi Takigawa
IPC分类号： C30B2502
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02664 , H01S5/0217 , H01S5/32341 , H01S2301/173 , H01S2304/04
摘要： A method for fabricating a Group III nitride semiconductor substrate according to the present invention includes the steps of: (a) preparing a substrate; (b) forming, on the substrate, a first semiconductor layer composed of a Group III nitride semiconductor; (c) forming, on the first semiconductor layer, a heat diffusion suppressing layer lower in thermal conductivity than the first semiconductor layer; (d) forming, on the heat diffusion suppressing layer, a second semiconductor layer composed of a Group III nitride semiconductor; and (e) irradiating the first semiconductor layer through the substrate with a light beam transmitted by the substrate and absorbed by the first semiconductor layer to decompose the first semiconductor layer.
摘要翻译：根据本发明的制造III族氮化物半导体衬底的方法包括以下步骤：（a）制备衬底; （b）在所述基板上形成由III族氮化物半导体构成的第一半导体层; （c）在第一半导体层上形成热导率比第一半导体层低的热扩散抑制层; （d）在所述热扩散抑制层上形成由III族氮化物半导体构成的第二半导体层; 和（e）用基板透射的光束照射第一半导体层，并被第一半导体层吸收以分解第一半导体层。

64. 发明授权

US06649494B2 Manufacturing method of compound semiconductor wafer 失效
公开(公告)号：US06649494B2
公开(公告)日：2003-11-18
申请号：US10054844
申请日：2002-01-25
申请人： Satoshi Tamura , Masahiro Ogawa , Masahiro Ishida , Masaaki Yuri
发明人： Satoshi Tamura , Masahiro Ogawa , Masahiro Ishida , Masaaki Yuri
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , C30B29/60 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0079 , Y10S117/915
摘要： A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the substrate at an exposed portion. Then, the substrate and the compound semiconductor film are separated from each other by irradiation of laser light, polishing of the substrate, etching, cutting, etc. Consequently, the resulting compound semiconductor film is used as a free-standing wafer.

65. 发明授权

US6056819A Method for pulling a single crystal 失效
标题翻译：拉单晶的方法
公开(公告)号：US6056819A
公开(公告)日：2000-05-02
申请号：US52129
申请日：1998-03-31
申请人： Masahiro Ogawa , Toshiyuki Yamamoto , Yoshiyuki Kashiwara , Tokuji Maeda
发明人： Masahiro Ogawa , Toshiyuki Yamamoto , Yoshiyuki Kashiwara , Tokuji Maeda
IPC分类号： C30B15/00 , C30B15/20 , C30B15/26 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/20 , Y10T117/1004 , Y10T117/1008
摘要： In the pulling of a single crystal, hitherto, it is difficult to reduce the OSF density while the deformation rate is held down within the tolerance, so that it is difficult to improve the quality and productivity. In the present invention, a deviation from a true circle in each part of a single crystal S.sub.n-1 which was pulled in the preceding batch is found and the pulling speed pattern f.sub.pn-1 (L.sub.1) in the preceding batch is updated (f.sub.pn (L.sub.1)) before a single crystal S.sub.n is pulled, in order to pull the single crystal as fast as possible so that the OSF density is small while the deviation is within the tolerance.
摘要翻译：在单晶的拉拔中，迄今为止难以降低OSF密度，同时在公差范围内将变形率降低，难以提高质量和生产率。在本发明中，发现与先前批次中拉出的单晶Sn-1的每个部分中的真圆的偏差，并且更新了上一批中的牵引速度模式fpn-1（L1）（fpn（ L1）），以便尽可能快地拉动单晶，使得OSF密度小，而偏差在容差范围内。

66. 发明授权

US5430119A Stretched molded article of ultra-high-molecular weight polypropylene and process for the preparation of the same 失效
标题翻译：拉伸模塑制品的超高分子量聚丙烯及其制备方法
公开(公告)号：US5430119A
公开(公告)日：1995-07-04
申请号：US332490
申请日：1994-10-31
申请人： Masahiro Kouya , Kazuo Yagi , Akio Fukui , Masahiro Ogawa
发明人： Masahiro Kouya , Kazuo Yagi , Akio Fukui , Masahiro Ogawa
IPC分类号： C08L23/12 , D01F6/06 , C08F10/06 , C08F110/06
CPC分类号： C08L23/12 , C08L91/06 , D01F6/06
摘要： A stretched molded article of ultra-high-molecular-weight polypropylene having an intrinsic viscosity [.eta.] of at least 4 dl/g, which has a degree of orientation of not less than 0.930 when obtained as a degree of orientation by an X-ray diffraction half-width, two or more of peak positions (melting points) within the temperature region of not lower than 180.degree. C. when measured by a differential scanning calorimeter, and an amount of output energy of not less than 1 kgfm/g after 10-time repetition under a load of 50% of the breaking strength.
摘要翻译：超高分子量聚丙烯的拉伸成型品，其特性粘度η为4dl / g以上，当以X射线取向为取向度时，其取向度不小于0.930，通过差示扫描量热计测定的180℃以上的温度范围内的2个以上的峰值位置（熔点），输出能量不小于1kgfm / g 经过10次重复的负荷下，50％的断裂强度。

67. 发明授权

US5091078A Oil filtration circuit for a belt-type transmission 失效
标题翻译：用于带式传输的油过滤电路
公开(公告)号：US5091078A
公开(公告)日：1992-02-25
申请号：US588602
申请日：1990-09-26
申请人： Masahiro Ogawa
发明人： Masahiro Ogawa
IPC分类号： F01M9/10 , F01M1/16 , F01M11/02 , F16H57/028 , F16H57/03 , F16H57/04 , F16N7/40
CPC分类号： F16H57/0421 , F01M1/16 , F16H57/0434 , F16H57/0489 , F16N7/40 , Y10T74/19991 , Y10T74/2186
摘要： A transmission includes a case having first and second case portions, an oil pump supported on the first case portion and a valve body supported on the second case portion. The valve body regulates the pressure of the oil discharged by the oil pump. The oil pump is provided with a pump manifold, and the manifold includes a filter which filters oil stored in an oil pan beneath the transmission. An oil intake passage is provided in the pump manifold, a starting end of the oil intake passage communicating with the oil pan, and a terminating end of the oil intake passage communicating with the oil pump through the filter. The pump manifold also includes an oil feed passage for feeding oil from the oil pump to the valve body, and an oil return passage for returning clean surplus oil from the valve body into the oil intake passage downstream of the filter.

68. 发明授权

US4770525A Liquid crystal projector 失效
标题翻译：液晶投影仪
公开(公告)号：US4770525A
公开(公告)日：1988-09-13
申请号：US25019
申请日：1987-03-12
申请人： Osamu Umeda , Masahiro Ogawa , Tatsuo Shimazaki
发明人： Osamu Umeda , Masahiro Ogawa , Tatsuo Shimazaki
IPC分类号： G02F1/1335 , G03B21/00
CPC分类号： G02F1/133526 , G03B21/006
摘要： In a liquid crystal projector wherein a light source is arranged behind a transmission liquid crystal display panel having a rectangular display portion, an image displayed on the liquid crystal display panel is enlarged by a projection lens, and an enlarged image is projected on the screen located in front of the liquid crystal display panel, a linear Fresnel lens is arranged between the light source and the liquid crystal display panel to narrow illumination light beam from the light source along only the widthwise direction of the rectangular display portion. When the illumination light beam from the light source is narrowed along only the widthwise direction of panel, the amount of unused light beam emitted outside the long sides of the display portion can be reduced, and the light beam from the light source can be effectively utilized for image projection.

69. 发明授权

US4762202A Elastic energy storing device 失效
标题翻译：弹性储能装置
公开(公告)号：US4762202A
公开(公告)日：1988-08-09
申请号：US72736
申请日：1987-07-13
申请人： Masahiro Ogawa , Akio Fukui
发明人： Masahiro Ogawa , Akio Fukui
IPC分类号： F03G1/02 , F03G1/06 , F03G1/00
CPC分类号： F03G1/06 , F03G1/02
摘要： An energy storing device comprises a first drum, a second drum and at least one intermediate drum, an elastic cord wound from the first drum to the second drum via the intermediate drum, and means for mechanically connecting the drums so that the peripheral displacement of the second drum is greater than that of the intermediate drum and that of the intermediate drum is greater than that of the first drum. By providing the at least one intermediate drum, energy output from the device can be obtained even if the initial strain of the elastic cord is zero, and high energy output efficiency can be obtained in comparison with conventional one drum and two drum devices.
摘要翻译：储能装置包括第一滚筒，第二滚筒和至少一个中间滚筒，经由中间滚筒从第一滚筒缠绕到第二滚筒的弹性绳，以及用于机械连接滚筒的装置，第二鼓比中间鼓的鼓大，并且中间鼓的鼓大于第一鼓的鼓。通过设置至少一个中间鼓，即使弹性绳的初始应变为零，也可以获得从装置输出的能量，并且与传统的一个鼓和两个鼓装置相比，可获得高的能量输出效率。

70. 发明授权

US4411964A Composite coating steel sheets having good corrosion resistance paintability and corrosion resistance after paint coating 失效
标题翻译：复合涂层钢板具有良好的耐腐蚀性，涂漆性和耐油漆性能
公开(公告)号：US4411964A
公开(公告)日：1983-10-25
申请号：US331663
申请日：1981-12-17
申请人： Tomihiro Hara , Masahiro Ogawa , Masakazu Tsukada , Masaaki Yamashita
发明人： Tomihiro Hara , Masahiro Ogawa , Masakazu Tsukada , Masaaki Yamashita
IPC分类号： C23C22/00 , C09D5/08 , C23C22/24 , C23C22/83 , C23C28/00 , C23F17/00 , C25D5/26 , C25D3/04 , C25D11/38
CPC分类号： C09D5/08 , C23C22/83 , C23C2222/20 , Y10S428/928 , Y10T428/12549 , Y10T428/12569 , Y10T428/1259 , Y10T428/12611 , Y10T428/12847
摘要： A composite coating steel sheet is disclosed which has good corrosion resistance, paintability and corrosion resistance after paint coating. The steel sheet comprises a plated base steel sheet, such as a galvanized, zinc alloy plated or aluminum plated steel sheet, and a chromate film formed on the plated base steel sheet. A composite silicate resin film is formed on the chromate film. The composite silicate film is composed of a reaction product of a colloidal silica, an organic resin and a silane compound.
摘要翻译：公开了一种复合涂层钢板，其在涂漆后具有良好的耐腐蚀性，可涂饰性和耐腐蚀性。钢板包括镀锌基钢板，例如镀锌，镀锌合金或镀铝钢板，以及形成在镀覆钢板上的铬酸盐膜。在铬酸盐膜上形成复合硅酸盐树脂膜。复合硅酸盐膜由胶体二氧化硅，有机树脂和硅烷化合物的反应产物组成。

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