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61. 发明授权

US06191817B1 Charge transfer device and method of driving the charge transfer device 失效
标题翻译：电荷转移装置和驱动电荷转移装置的方法
公开(公告)号：US06191817B1
公开(公告)日：2001-02-20
申请号：US08831415
申请日：1997-04-01
申请人： Hideo Kanbe
发明人： Hideo Kanbe
IPC分类号： H04N314
CPC分类号： H01L27/14831
摘要： A charge transfer device and a method of driving the charge transfer device are arranged to enable electric charge to be correctly transferred in a short time after starting. An initialization voltage is applied at the time of starting and a portion having a higher impurity concentration is formed below a channel.
摘要翻译：电荷转移装置和驱动电荷转移装置的方法被布置成使得能够在启动后的短时间内正确地传送电荷。在起动时施加初始化电压，在通道下方形成杂质浓度较高的部分。

62. 发明授权

US6140213A Semiconductor wafer and method of manufacturing same 失效
标题翻译：半导体晶片及其制造方法
公开(公告)号：US6140213A
公开(公告)日：2000-10-31
申请号：US84006
申请日：1998-05-26
申请人： Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
发明人： Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
IPC分类号： H01L21/20 , H01L21/265 , H01L21/322 , H01L27/148 , H01L29/167 , H01L29/36 , H01L21/205
CPC分类号： H01L21/26506 , H01L21/3221 , H01L21/3225 , H01L29/167 , H01L29/36 , Y10S257/913
摘要： In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.
摘要翻译：在根据本发明的半导体晶片中，在半导体衬底的表面上形成外延层，存在与构成半导体衬底的第一元件不同但同源的第二元素，以在半导体衬底上具有峰值浓度衬底侧而不是表面，并且该峰浓度为1×1016原子/ cm3以上。

63. 发明授权

US5581099A CCD solid state image device which has a semiconductor substrate with a P-type region with an N-type region formed therein by injection of arsenic 失效
标题翻译： CCD固态图像器件，其具有通过注入砷形成在其中形成有N型区域的P型区域的半导体衬底
公开(公告)号：US5581099A
公开(公告)日：1996-12-03
申请号：US464094
申请日：1995-06-05
申请人： Takahisa Kusaka , Hideo Kanbe , Akio Izumi , Hideshi Abe , Masanori Ohashi , Atsushi Asai
发明人： Takahisa Kusaka , Hideo Kanbe , Akio Izumi , Hideshi Abe , Masanori Ohashi , Atsushi Asai
IPC分类号： H01L27/148 , H01L31/0288 , H01L31/103 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/367 , H04N5/369 , H04N5/372 , H01L29/768
CPC分类号： H01L31/103 , H01L27/14831 , H01L31/0288 , Y02E10/50 , Y10S438/909
摘要： In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN Junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.
摘要翻译：在CCD固体摄像装置中，其中感光部分由在第一P型阱区域和形成在N型硅衬底上的N型杂质扩散区域之间的PN结形成的光电二极管构成，N 型杂质扩散区通过离子注入单一砷（As）形成。根据该CCD固体摄像装置，可以减少图像感测画面上的亮度缺陷，这是图像感测画面遇到的缺陷之一。此外，构成PN结的n型杂质扩散区域的尺寸可以减小，并且可以使CCD固态图像感测装置本身尺寸更小。此外，还提供了一种制造CCD固态图像感测装置的方法。

64. 发明授权

US08446508B2 Solid state imaging device with optimized locations of internal electrical components 失效
标题翻译：具有内部电气元件优化位置的固态成像装置
公开(公告)号：US08446508B2
公开(公告)日：2013-05-21
申请号：US11472430
申请日：2006-06-22
申请人： Hideo Kanbe
发明人： Hideo Kanbe
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H01L27/14621 , H01L27/14627 , H01L27/14687 , H01L27/14812 , H01L27/14843
摘要： A solid state imaging device improving and stabilizing imaging characteristic by optimizing a location of a positive hole accumulation layer to an electrode at the periphery of a light receiving portion, and having light receiving portions formed on a substrate and electrodes formed on the substrate at the periphery of the light receiving portion, each electrode including at least a first electrode to which a positive voltage is applied and a second electrode to which only 0 volt or a negative polarity voltage is applied, each light receiving portion having a signal charge accumulation region formed on the substrate and a positive hole accumulation region formed in a surface layer portion of the signal charge accumulation region, each positive hole accumulation region arranged at a distance from the first electrode and arranged so as to overlap the second electrode, and method of producing the same and a camera.
摘要翻译：一种固态成像装置，其通过将空穴积聚层的位置优化到光接收部分的周围的电极，并且具有形成在基板上的光接收部分和在周边的基板上形成的电极来优化和稳定成像特性每个电极包括至少施加正电压的第一电极和仅施加0伏特或负极性电压的第二电极，每个光接收部分具有形成在第一电极上的信号电荷累积区域所述基板和形成在所述信号电荷累积区域的表层部的正空穴积存区域，与所述第一电极配置成与所述第一电极重叠配置的每个空穴积存区域，以及与所述第二电极重叠的方法和相机。

65. 发明授权

US08289425B2 Solid-state image pickup device with an improved output amplifier circuitry 失效
标题翻译：具有改进的输出放大器电路的固态图像拾取器件
公开(公告)号：US08289425B2
公开(公告)日：2012-10-16
申请号：US12585287
申请日：2009-09-10
申请人： Hideo Kanbe
发明人： Hideo Kanbe
IPC分类号： H04N5/335 , H04N3/14
CPC分类号： H04N5/37213 , H01L27/14843 , H01L27/14887 , H04N5/361 , H04N5/3722
摘要： A solid-state image pickup device includes a plurality of light sensing sections; a plurality of vertical transfer registers configured to transfer signal charge of the plurality of light sensing sections in the vertical direction; a horizontal transfer register configured to transfer the signal charge in the horizontal direction; a floating gate amplifier that is placed at an output side of the horizontal transfer register; a floating diffusion amplifier that is placed in a horizontal transfer register which is provided at a stage subsequent to the floating gate amplifier; and an overflow drain mechanism that is placed in the horizontal transfer register between the floating gate amplifier and the floating diffusion amplifier.
摘要翻译：固态图像拾取装置包括多个光感测部分; 多个垂直传送寄存器，被配置为在垂直方向上传送多个光检测部分的信号电荷; 水平传送寄存器，被配置为在水平方向上传送信号电荷; 放置在水平传送寄存器的输出侧的浮动栅放大器; 放置在水平传输寄存器中的浮动扩散放大器，其设置在浮置栅极放大器之后的阶段; 以及放置在浮动栅极放大器和浮动扩散放大器之间的水平传输寄存器中的溢出漏极机构。

66. 发明授权

US08154056B2 Solid-state imaging device, method of manufacturing solid-state imaging device and method of driving solid-state imaging device 有权
标题翻译：固态成像装置，制造固态成像装置的方法和驱动固态成像装置的方法
公开(公告)号：US08154056B2
公开(公告)日：2012-04-10
申请号：US11119138
申请日：2005-04-30
申请人： Hideo Kanbe
发明人： Hideo Kanbe
IPC分类号： H01L27/148
CPC分类号： H01L27/14812 , H01L27/14683
摘要： A solid-state imaging device capable of securing sufficient sensitivity and obtaining favorable characteristics is provided.The solid-state imaging device includes a charge-transfer portion 2 provided on one side of each column of light-receiving sensor portions 1, each forming a pixel, arranged in the form of a matrix and a transfer electrode of the charge-transfer portion 2 including a first transfer electrode formed of first electrode layers 3A and 3C and a second transfer electrode formed by electrically connecting first electrode layers 3B and 3D and a second electrode layer 4; the first electrode layers 3B and 3D in the second transfer electrode are independently formed in each of the charge-transfer portion 2; and the first transfer electrodes 3A and 3C and the second electrode layer 4 are laminated in a portion between pixels adjacent to each other in the direction of the charge-transfer portions 2.
摘要翻译：提供了能够确保足够的灵敏度并获得有利特性的固态成像装置。固态成像装置包括：电荷转移部分2，其设置在各列的光接收传感器部分1的一侧，每个形成像素，以矩阵的形式和电荷转移部分的转移电极 2包括由第一电极层3A和3C形成的第一转移电极和通过电连接第一电极层3B和3D以及第二电极层4而形成的第二转移电极; 第二转印电极中的第一电极层3B和3D独立地形成在每个电荷转移部分2中; 并且第一转移电极3A和3C以及第二电极层4在电荷转移部分2的方向上彼此相邻的像素之间的部分层叠。

67. 发明授权

US07952125B2 Solid-state imaging device, production method and drive method thereof, and camera 有权
标题翻译：固态成像装置，其制作方法及其驱动方法及相机
公开(公告)号：US07952125B2
公开(公告)日：2011-05-31
申请号：US12498472
申请日：2009-07-07
申请人： Hideo Kanbe
发明人： Hideo Kanbe
IPC分类号： H01L27/146
CPC分类号： H01L27/14812 , H01L27/14843
摘要： A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction.
摘要翻译：一种固态成像装置，其能够减少光接收部的圆周部分处的入射光的蚀刻（阻挡），并实现更大的视角和高速驱动。采用通过一个多晶硅层形成第一转移电极和第二转移电极的单层转移电极配置。在水平方向上连接的第一传输电极上形成两个沿水平方向延伸的分路布线，例如通过低电阻分流布线向传输通道上的第一传输电极和第二传输电极提供四相转移脉冲在水平方向。

68. 发明授权

US07843027B2 Solid-state imaging device, camera and method of producing the solid-state imaging device 有权
标题翻译：固态成像装置，照相机和固态成像装置的制造方法
公开(公告)号：US07843027B2
公开(公告)日：2010-11-30
申请号：US12248633
申请日：2008-10-09
申请人： Hideo Kanbe
发明人： Hideo Kanbe
IPC分类号： H01L31/058
CPC分类号： H01L27/14632 , H01L21/26506 , H01L21/3221 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14698
摘要： A solid-state imaging device in which a first conductive type epitaxial layer is formed on its first surface with an interconnection layer and light is received at a second surface of said epitaxial layer, the solid-state imaging device including: (a) a second conductive type region formed in said epitaxial layer with a first impurity concentration and storing a charge generated by a photoelectrical conversion, and (b) a first conductive type impurity layer formed closer to said second surface side of said epitaxial layer than said second conductive type region and having a second impurity concentration higher than the first impurity concentration; wherein the second impurity concentration has a concentration gradient increasing toward the second surface side.
摘要翻译：一种固态成像器件，其中第一导电型外延层在其第一表面上形成有互连层，并且光被接收在所述外延层的第二表面处，所述固态成像器件包括：（a）第二导电型外延层，在所述外延层中形成具有第一杂质浓度并存储通过光电转换产生的电荷的导电类型区域，以及（b）形成为比所述第二导电类型区域更靠近所述外延层的所述第二表面侧形成的第一导电类型杂质层并且具有高于第一杂质浓度的第二杂质浓度; 其中所述第二杂质浓度具有朝向所述第二表面侧增加的浓度梯度。

69. 发明申请

US20100194959A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, METHOD FOR DRIVING THE SAME, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，其制造方法，驱动它们的方法和电子装置
公开(公告)号：US20100194959A1
公开(公告)日：2010-08-05
申请号：US12695316
申请日：2010-01-28
申请人： Hideo Kanbe
发明人： Hideo Kanbe
IPC分类号： H04N5/335 , H04N5/225 , H01L31/18 , H01L31/14
CPC分类号： H01L27/14812 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14683 , H01L27/14843 , H04N5/353 , H04N5/361 , H04N5/3728
摘要： A solid-state imaging device including: a substrate; a substrate voltage supply that applies a first potential to the substrate during a light receiving period and applies a second potential to the substrate during a no-light receiving period; and a plurality of pixels including a light receiving portion that generates signal charges in response to received light, a storage capacitor that stores and holds the signal charges, a dark current suppressing portion, an electronic shutter adjusting layer that adjusts potential distribution in a substrate so that the signal charges are swept to the rear surface side of the substrate, a readout gate portion that reads out the signal charges stored in the storage capacitor, and a vertical transfer register that transfers the signal charges read out by the readout gate portion in a vertical direction.
摘要翻译：一种固态成像装置，包括：基板; 基板电压源，其在光接收期间对基板施加第一电位，并且在无光接收期间向基板施加第二电位; 以及多个像素，包括响应于接收到的光产生信号电荷的光接收部分，存储和保持信号电荷的存储电容器，暗电流抑制部分，调整衬底中的电位分布的电子快门调节层，信号电荷被扫描到衬底的背面侧，读出存储在存储电容器中的信号电荷的读出栅极部分，以及在读出栅极部分中读出的信号电荷的垂直传送寄存器垂直方向

70. 发明授权

US07705374B2 Solid-state image pickup device and driving method of solid-state image pickup device 失效
标题翻译：固态图像拾取装置和固态图像拾取装置的驱动方法
公开(公告)号：US07705374B2
公开(公告)日：2010-04-27
申请号：US10854422
申请日：2004-05-26
申请人： Hideo Kanbe
发明人： Hideo Kanbe
IPC分类号： H01L21/00
CPC分类号： H01L27/14601
摘要： A solid-state image pickup device including: a pixel region on a semiconductor substrate, the pixel region including: a sensor region for photoelectrically converting incident light; a vertical CCD formed on one side of the sensor region with a readout region interposed between the sensor region and the vertical CCD; and a channel stop region formed on a side opposite from the sensor region with the vertical CCD interposed between the sensor region and the channel stop region; and a vertical transfer electrode on the vertical CCD with an insulating film interposed between the vertical transfer electrode and the vertical CCD. The vertical transfer electrode is formed above the vertical CCD such that width of the vertical transfer electrode and width of a channel region of the vertical CCD are substantially equal to each other.
摘要翻译：一种固态摄像装置，包括：半导体衬底上的像素区域，所述像素区域包括：用于光电转换入射光的传感器区域; 在传感器区域的一侧形成有放置在传感器区域和垂直CCD之间的读出区域的垂直CCD; 以及形成在与传感器区域相反的一侧的通道停止区域，其中垂直CCD插入在传感器区域和通道停止区域之间; 垂直CCD上垂直传输电极，其中介于垂直转印电极和垂直CCD之间的绝缘膜。垂直转印电极形成在垂直CCD上方，使得垂直转印电极的宽度和垂直CCD的沟道区域的宽度基本相等。

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