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    • 68. 发明申请
    • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE OR PHOTOMASK
    • 制造半导体器件或光电子器件的方法
    • US20090206282A1
    • 2009-08-20
    • US12364077
    • 2009-02-02
    • Kozo OginoTakashi Maruyama
    • Kozo OginoTakashi Maruyama
    • A61N5/00
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/30
    • A method for manufacturing a semiconductor device or a photomask by exposing a pattern while scanning a plurality of deflection regions determined depending on a deflection width of an exposure device on an exposure target with electron beams, enables a computer to execute a step of extracting a first pattern that exists near the boundary of the deflection region and in a first deflection region, a step of searching a second pattern that is adjacent to the first pattern and in a second deflection region different from the first deflection region, and a step of performing data processing of exposure data in accordance with a width of the first pattern so as to minimize the change in distance between the extracted first pattern and the searched second pattern due to positional deviation of the deflection region.
    • 一种通过在扫描由电子束在曝光对象上的曝光装置的偏转宽度确定的多个偏转区域的同时曝光图案的方法,使计算机能够执行提取第一 存在于偏转区域的边界附近和第一偏转区域中的图案,搜索与第一图案相邻的第二图案和与第一偏转区域不同的第二偏转区域的步骤,以及执行数据的步骤 根据第一图案的宽度处理曝光数据,以便由于偏转区域的位置偏差而最小化提取的第一图案与搜索到的第二图案之间的距离变化。