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61. 发明申请

US20080248280A1 Process for Preparing a Dispersion Liquid of Zeolite Fine Particles 有权
标题翻译：沸石微粒分散液的制备方法
公开(公告)号：US20080248280A1
公开(公告)日：2008-10-09
申请号：US12060291
申请日：2008-04-01
申请人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
发明人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
IPC分类号： B32B3/26 , C09K17/40 , H01L21/3105 , B05D3/02
CPC分类号： H01L21/31695 , C01B39/04 , C23C18/1212 , C23C18/122 , C23C18/127 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , Y10T428/249953
摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.
摘要翻译：本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。通过该方法获得的沸石细颗粒的分散液。

62. 发明申请

US20080193882A1 PATTERN FORMATION METHOD 有权
标题翻译：模式形成方法
公开(公告)号：US20080193882A1
公开(公告)日：2008-08-14
申请号：US11958661
申请日：2007-12-18
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/2041
摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
摘要翻译：在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

63. 发明申请

US20080118737A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 审中-公开
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US20080118737A1
公开(公告)日：2008-05-22
申请号：US11999076
申请日：2007-12-04
申请人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B5/18 , B05D5/00 , C08J9/22
CPC分类号： H01L23/5222 , C08K3/34 , C08L83/02 , C09D183/04 , H01L23/53228 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , Y10T428/249953 , Y10T428/31663 , H01L2924/00
摘要： The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4-n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.
摘要翻译：本发明提供一种成膜用组合物，其可以形成介电性，粘合性，膜一致性和机械强度优异的多孔膜，容易变薄; 多孔膜及其形成方法，以及内部含有多孔膜的高性能和高可靠性的半导体器件。更具体地，用于形成多孔膜的组合物包括含有无定形聚合物的溶液，其通过水解和缩合由通式（R 1）2表示的至少一种硅烷化合物而获得，（OR 2）4-n N，以及通过使用氢氧化季铵形成的沸石溶胶。形成多孔膜的方法包括用于涂覆用于形成多孔膜的组合物的涂布步骤; 随后的干燥步骤; 和多孔性形成步骤。

64. 发明授权

US07341775B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07341775B2
公开(公告)日：2008-03-11
申请号：US10706861
申请日：2003-11-12
申请人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/48
CPC分类号： H01L21/02126 , C08K5/19 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953 , Y10T428/31649 , Y10T428/31663
摘要： Provided are a composition for forming film which can form a porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; a porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a surfactant and a solution comprising polymer obtainable by hydrolyzing and condensing, in the presence of the surfactant, one or more of alkoxysilane represented by Formula (1) and one or more of alkoxysilane represented by Formula (2): (R1)mSi(OR2)4-m (1) R3Si(R4)n(OR5)3-n (2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.
摘要翻译：提供一种可形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜的成膜用组合物。多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。更具体地，提供了一种用于形成多孔膜的组合物，其包含表面活性剂和包含可通过在表面活性剂存在下水解和缩合获得的聚合物的溶液，所述聚合物可由一种或多种由式（1）表示的烷氧基硅烷和一种或多种烷氧基硅烷由式（2）表示：<？in-line-formula description =“In-line Formulas”end =“lead”？>（R＆lt; 1＆gt;）＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line -formulae description =“In-line Formulas”end =“lead”？> R <3> Si（R 4） 3-n（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>还提供了形成多孔的方法薄膜，其包括在基材上涂布所述组合物以形成薄膜的步骤和将薄膜转变成多孔薄膜的步骤。

65. 发明授权

US07338743B2 Resist material and pattern formation method 有权
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US07338743B2
公开(公告)日：2008-03-04
申请号：US11197296
申请日：2005-08-05
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/76 , G03C1/492 , G03C1/494 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.
摘要翻译：抗蚀剂材料包括第一聚合物，其中碱溶性基团的一部分被酸酸化的酸不稳定基团保护; 其中基本上所有的碱溶性基团都被被酸化的酸不稳定基团保护的第二聚合物; 和酸发生剂。

66. 发明授权

US07273820B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07273820B2
公开(公告)日：2007-09-25
申请号：US10399755
申请日：2001-10-09
申请人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
IPC分类号： H01L21/469
CPC分类号： H01L21/76819 , H01L21/31051
摘要： After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.
摘要翻译：在通过向形成有阶梯层的基板的表面供给流动性的材料形成流体膜之后，通过具有平面的按压面的按压部件将流体膜压在基板上，使得流体膜的表面为平面化在该状态下加热流体膜，由此固化，形成具有平坦表面的固化膜。

67. 发明申请

US20070178319A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 审中-公开
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US20070178319A1
公开(公告)日：2007-08-02
申请号：US11625754
申请日：2007-01-22
申请人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B9/04 , H01L21/31
CPC分类号： C09D183/14 , C09D4/00 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/31663 , C08G77/04
摘要： The present invention is a composition for forming a porous film obtainable by hydrolysis and condensation, in an acidic or alkaline condition, of a mixture of 100 parts by weight of one or more compounds selected of the group consisting of hydrolysable silicon compounds represented by Formulas (1) and (2) as described herein and partially hydrolyzed and condensed products of the hydrolysable silicon compounds represented by Formulas (1) and (2), and 0.1 to 20 parts by weight of one or more cross-linking agents selected from the group consisting of structure-controlled cyclic or multi-branched oligomers represented by Formulas (3) to (8) as described herein.
摘要翻译：本发明是一种用于形成多孔膜的组合物，其通过在酸性或碱性条件下水解和缩合100重量份的一种或多种选自由式（II）表示的可水解硅化合物的化合物的混合物 1）和（2）和由式（1）和（2）表示的可水解硅化合物的部分水解和缩合产物和0.1至20重量份选自以下的交联剂：由本文所述的由式（3）至（8）表示的结构受控的环状或多支链低聚物组成。

68. 发明授权

US07244657B2 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 失效
公开(公告)号：US07244657B2
公开(公告)日：2007-07-17
申请号：US10703854
申请日：2003-11-07
申请人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/76 , C23C16/00
CPC分类号： H01L21/02126 , C01B39/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

69. 发明申请

US20070108593A1 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 失效
标题翻译：沸石溶胶及其制备方法，用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US20070108593A1
公开(公告)日：2007-05-17
申请号：US11652297
申请日：2007-01-11
申请人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： C23C16/00 , C07C5/25 , H01L23/12
CPC分类号： H01L21/02126 , C01B39/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.
摘要翻译：本发明提供一种沸石溶胶，其可以通过通常的半导体工艺中使用的方法来形成多孔膜，该多孔膜可以被薄化到预期的厚度，其具有优异的介电性能，粘附性，膜稠度和机械强度，并且可以容易变薄; 用于成膜的组合物; 多孔膜及其形成方法; 以及内部含有该多孔膜的高性能，高可靠性的半导体装置。更具体地说，通过水解和分解由以下通式表示的硅烷化合物制备沸石溶胶：Si（OR 1）4（其中R 1， SUP>表示具有1至4个碳的直链或支链烷基，当存在多于一个R 1时，R 1可以是独立的，并且在结构导向剂和碱性催化剂的存在下在用于形成多孔膜的常规涂布溶液中相同或不同）然后在75℃以下的温度下加热硅烷化合物。使用含有该沸石溶胶的多孔膜形成用组合物。

70. 发明申请

US20070082292A1 Water-soluble material, chemically amplified resist and pattern formation method using the same 审中-公开
标题翻译：水溶性材料，化学放大抗蚀剂和使用其的图案形成方法
公开(公告)号：US20070082292A1
公开(公告)日：2007-04-12
申请号：US11602377
申请日：2006-11-21
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0392 , G03F7/095
摘要： A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.
摘要翻译：用于在化学放大抗蚀剂膜上形成水溶性膜的水溶性材料包括水溶性聚合物，酸产生剂和构成用于掺入酸产生剂的包合物的化合物。此外，在图案形成方法中，在基板上形成化学放大抗蚀剂膜，以及由水溶性材料构成的水溶性膜，所述水溶性物质包含水溶性聚合物，酸产生剂和构成包合物的化合物，在抗蚀剂膜上形成并入酸产生剂。此后，通过选择性地照射通过水溶性膜曝光光的抗蚀剂膜来进行图案曝光，使得到的抗蚀剂膜显影并除去水溶性膜。因此，形成由抗蚀剂膜制成的抗蚀剂图案。

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