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61. 发明授权

US08158532B2 Topography reduction and control by selective accelerator removal 有权
标题翻译：通过选择性促进剂去除的地形减少和控制
公开(公告)号：US08158532B2
公开(公告)日：2012-04-17
申请号：US11602128
申请日：2006-11-20
申请人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
发明人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
IPC分类号： H01L21/302
CPC分类号： C25D17/14 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/34 , C25D7/123 , C25D17/001 , C25D17/06 , C25F3/16 , C25F3/30 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.
摘要翻译：电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。在介电层中选择性地施加电镀加速器和填充宽特征腔。

62. 发明申请

US20120000786A1 CONTROL OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING 有权
标题翻译：电解液中电解液动力学的有效控制
公开(公告)号：US20120000786A1
公开(公告)日：2012-01-05
申请号：US13172642
申请日：2011-06-29
申请人： Steven T. Mayer , David W. Porter
发明人： Steven T. Mayer , David W. Porter
IPC分类号： C25D5/08 , C25D17/00
CPC分类号： C25D17/002 , C25D5/04 , C25D5/08 , C25D17/001 , C25D17/008 , C25D17/02 , C25D21/10
摘要： Described are apparatus and methods for electroplating one or more metals onto a substrate. Embodiments include electroplating apparatus configured for, and methods including, efficient mass transfer during plating so that highly uniform plating layers are obtained. In specific embodiments, the mass transfer is achieved using a combination of impinging flow and shear flow at the wafer surface.
摘要翻译：描述了将一种或多种金属电镀到基底上的装置和方法。实施例包括电镀设备，以及包括在电镀过程中有效传质的方法，从而获得高度均匀的镀层。在具体实施例中，使用在晶片表面处冲击流动和剪切流动的组合来实现传质。

63. 外观设计

USD648289S1 Electroplating flow shaping plate having offset spiral hole pattern 有权
标题翻译：具有偏移螺旋孔图案的电镀流动成型板
公开(公告)号：USD648289S1
公开(公告)日：2011-11-08
申请号：US29377521
申请日：2010-10-21
申请人： Steven T. Mayer , David Porter , Robert Rash
设计人： Steven T. Mayer , David Porter , Robert Rash

64. 发明授权

US08053861B2 Diffusion barrier layers 有权
标题翻译：扩散阻挡层
公开(公告)号：US08053861B2
公开(公告)日：2011-11-08
申请号：US12359997
申请日：2009-01-26
申请人： Thomas W. Mountsier , Roey Shaviv , Steven T. Mayer , Ronald A. Powell
发明人： Thomas W. Mountsier , Roey Shaviv , Steven T. Mayer , Ronald A. Powell
IPC分类号： H01L21/70
CPC分类号： C23C14/0623 , C23C14/06 , C23C14/3414 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76898 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Provided are methods and apparatuses for depositing barrier layers for blocking diffusion of conductive materials from conductive lines into dielectric materials in integrated circuits. The barrier layer may contain copper. In some embodiments, the layers have conductivity sufficient for direct electroplating of conductive materials without needing intermediate seed layers. Such barrier layers may be used with circuits lines that are less than 65 nm wide and, in certain embodiments, less than 40 nm wide. The barrier layer may be passivated to form easily removable layers including sulfides, selenides, and/or tellurides of the materials in the layer.
摘要翻译：提供了用于沉积阻挡层的方法和装置，用于阻挡导电材料从集成电路中的导电线扩散到电介质材料中。阻挡层可以含有铜。在一些实施例中，这些层具有足够的导电性，用于直接电镀导电材料，而不需要中间种子层。这样的阻挡层可以与小于65nm宽的电路线并且在某些实施例中小于40nm宽使用。阻挡层可以被钝化以形成容易去除的层，包括层中的材料的硫化物，硒化物和/或碲化物。

65. 发明申请

US20100320609A1 WETTING PRETREATMENT FOR ENHANCED DAMASCENE METAL FILLING 有权
标题翻译：增强预处理增强金属填充
公开(公告)号：US20100320609A1
公开(公告)日：2010-12-23
申请号：US12684787
申请日：2010-01-08
申请人： Steven T. Mayer , David W. Porter , Mark J. Willey
发明人： Steven T. Mayer , David W. Porter , Mark J. Willey
IPC分类号： H01L21/3205 , H01L21/302 , H01L23/52
CPC分类号： H01L21/2885 , C25D3/38 , C25D5/003 , C25D5/02 , C25D5/34 , C25D7/123 , C25D17/001 , C25D21/04 , H01L21/76861 , H01L21/76898
摘要： Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.
摘要翻译：公开了预润湿装置的设计和方法。这些设备的设计和方法用于在将晶片上的金属镀覆在晶片表面之前预先浸湿晶片。公开的预润湿流体的组合物防止晶片上种子层的腐蚀，并且还改善晶片上特征的填充率。

66. 发明申请

US20100055924A1 APPARATUS AND METHOD FOR EDGE BEVEL REMOVAL OF COPPER FROM SILICON WAFERS 有权
标题翻译：用于边缘去除硅膜的铜的装置和方法
公开(公告)号：US20100055924A1
公开(公告)日：2010-03-04
申请号：US12199412
申请日：2008-08-27
申请人： Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
发明人： Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
IPC分类号： H01L21/306
CPC分类号： H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
摘要翻译：描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。

67. 发明申请

US20090283499A1 Fabrication of semiconductor interconnect structure 有权
公开(公告)号：US20090283499A1
公开(公告)日：2009-11-19
申请号：US11888312
申请日：2007-07-30
申请人： Steven T. Mayer , Daniel A. Koos , Eric Webb
发明人： Steven T. Mayer , Daniel A. Koos , Eric Webb
IPC分类号： C23F1/00
CPC分类号： C23F1/02 , C23C18/1608 , C23C18/1834 , C23F1/18 , C23F1/34 , H01L21/288 , H01L21/32134 , H01L21/76849 , H01L21/76856 , H01L21/76858 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

68. 发明申请

US20090277867A1 Topography reduction and control by selective accelerator removal 有权
标题翻译：通过选择性促进剂去除的地形减少和控制
公开(公告)号：US20090277867A1
公开(公告)日：2009-11-12
申请号：US11602128
申请日：2006-11-20
申请人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
发明人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
IPC分类号： B44C1/22 , B05D5/12
CPC分类号： C25D17/14 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/34 , C25D7/123 , C25D17/001 , C25D17/06 , C25F3/16 , C25F3/30 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.
摘要翻译：电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。在介电层中选择性地施加电镀加速器和填充宽特征腔。

69. 发明授权

US07338908B1 Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltage 有权
标题翻译：具有减小的电容，漏电流和改善的击穿电压的半导体互连结构的制造方法
公开(公告)号：US07338908B1
公开(公告)日：2008-03-04
申请号：US10690084
申请日：2003-10-20
申请人： Daniel A. Koos , Steven T. Mayer , Heung L. Park , Timothy Patrick Cleary , Thomas Mountsier
发明人： Daniel A. Koos , Steven T. Mayer , Heung L. Park , Timothy Patrick Cleary , Thomas Mountsier
IPC分类号： H01L21/302
CPC分类号： H01L21/32134 , H01L21/02068 , H01L21/321 , H01L21/76849 , H01L21/76856 , H01L21/76883
摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.
摘要翻译：描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。氧化和蚀刻可能发生在相同的溶液中。在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。合适的直接金属蚀刻剂包括任何数量的酸性溶液。该方法允许减少点蚀的受控氧化和/或蚀刻。在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。

70. 发明授权

US07070686B2 Dynamically variable field shaping element 有权
公开(公告)号：US07070686B2
公开(公告)日：2006-07-04
申请号：US10274755
申请日：2002-10-21
申请人： Robert J. Contolini , Andrew J. McCutcheon , Steven T. Mayer
发明人： Robert J. Contolini , Andrew J. McCutcheon , Steven T. Mayer
IPC分类号： C25D5/00 , C25D17/00
CPC分类号： C25D5/006 , C25D7/123 , C25D17/001 , C25D17/008 , C25D17/06
摘要： In an electrochemical reactor used for electrochemical treatment of a substrate, for example, for electroplating or electropolishing the substrate, one or more of the surface area of a field-shaping shield, the shield's distance between the anode and cathode, and the shield's angular orientation is varied during electrochemical treatment to screen the applied field and to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film of conductive metal on the wafer.

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