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61. 发明授权

US6084405A Transducer utilizing giant magnetoresistance effect and having a ferromagnetic layer pinned in a direction perpendicular to a direction of a signal magnetic field 失效
标题翻译：传感器利用巨磁电阻效应并且具有在垂直于信号磁场方向的方向上固定的铁磁层
公开(公告)号：US6084405A
公开(公告)日：2000-07-04
申请号：US978640
申请日：1997-11-26
申请人： Tetsuhiro Suzuki
发明人： Tetsuhiro Suzuki
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , G01R33/02
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01L43/08 , G11B2005/3996
摘要： A magnetoresistive transducer showing a giant magnetoresistance effect has a multi-layer structure including first and second ferromagnetic layers separated by a non-magnetic layer. The second ferromagnetic layer has a magnetization pinned in a direction perpendicular to a direction of a signal magnetic field. An anti-ferromagnetic layer adjacent to the second ferromagnetic layer pins magnetization of the second ferromagnetic layer in a direction perpendicular to a direction of a signal magnetic field so that magnetizations of the first and second ferromagnetic layers have components perpendicular to the signal magnetic field and those components are anti-parallel to each other.
摘要翻译：显示出巨磁阻效应的磁阻传感器具有多层结构，其包括由非磁性层分离的第一和第二铁磁层。第二铁磁层具有在与信号磁场的方向垂直的方向上固定的磁化。与第二铁磁层相邻的反铁磁层在垂直于信号磁场的方向上引导第二铁磁层的磁化，使得第一和第二铁磁层的磁化具有垂直于信号磁场的分量，以及那些组件彼此反平行。

62. 发明申请

US20080164502A1 Magnetic Memory and Manufacturing Method For the Same 有权
标题翻译：磁记忆和制造方法相同
公开(公告)号：US20080164502A1
公开(公告)日：2008-07-10
申请号：US11667834
申请日：2005-11-16
申请人： Yoshiyuki Fukumoto , Tetsuhiro Suzuki , Katsumi Suemitsu
发明人： Yoshiyuki Fukumoto , Tetsuhiro Suzuki , Katsumi Suemitsu
IPC分类号： H01L27/00
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.
摘要翻译：本发明提供一种减小磁存储器中的无磁化层的开关场变化的新技术。根据本发明的磁存储器包括具有在第一方向上具有形状磁各向异性的铁磁层和磁应变常数为正的铁磁层的无磁化层; 以及构造成在与第一方向相同的方向上对所述无磁化层施加拉伸应力的应力诱导结构。

63. 发明申请

US20070019466A1 MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20070019466A1
公开(公告)日：2007-01-25
申请号：US11380962
申请日：2006-05-01
申请人： Tetsuhiro Suzuki , Sadahiko Miura
发明人： Tetsuhiro Suzuki , Sadahiko Miura
IPC分类号： G11C11/14
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L43/08
摘要： A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.
摘要翻译：提供一种磁性随机存取存储器，包括基板，磁阻元件，其包括具有可逆自发磁化的铁磁层，该铁磁层根据自发磁化的方向而在电阻上变化，并且形成在基板上方，并且延伸在第一方向上用于产生电流以产生要施加到磁阻元件的磁场。所述布线形成为穿过比所述磁阻元件更靠近所述基板的第一位置，并且当从垂直于所述基板的主表面的方向观察时不与所述磁阻元件重叠，并且所述第二位置在所述磁阻元件

64. 发明申请

US20060038213A1 Magnetic memory adopting synthetic antiferromagnet as free magnetic layer 有权
标题翻译：磁记忆采用合成反铁磁体作为自由磁性层
公开(公告)号：US20060038213A1
公开(公告)日：2006-02-23
申请号：US11208370
申请日：2005-08-19
申请人： Kaoru Mori , Tetsuhiro Suzuki , Yoshiyuki Fukumoto , Sadahiko Miura
发明人： Kaoru Mori , Tetsuhiro Suzuki , Yoshiyuki Fukumoto , Sadahiko Miura
IPC分类号： H01L29/94
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.
摘要翻译：磁存储器包括：包括自由磁性层的磁阻元件; 第一互连件，其在第一方向上倾斜于所述自由磁性层的容易轴线延伸; 沿与第一方向大致正交的第二方向延伸的第二互连; 以及写入电路，通过在所述第一互连上形成第一写入电流将数据写入所述自由磁性层，然后在所述第二互连上开启第二写入电流，所述第一写入电流导通。自由磁性层包括：第一至第N铁磁层和N等于或大于4的第一至第（N-1）个非磁性层，第i个非磁性层设置在i 和第（i + 1）个铁磁层，其中i为等于或小于N-1的任意自然数。自由磁性层被设计成使得第j和第（j + 1）个铁磁层之间的反铁磁耦合比第一和第二铁磁层之间的反铁磁耦合更强，j是从2到N的整数中的任何一个 -2。

65. 发明授权

US07582923B2 Magnetic memory and manufacturing method for the same 有权
标题翻译：磁记忆及其制造方法相同
公开(公告)号：US07582923B2
公开(公告)日：2009-09-01
申请号：US11667834
申请日：2005-11-16
申请人： Yoshiyuki Fukumoto , Tetsuhiro Suzuki , Katsumi Suemitsu
发明人： Yoshiyuki Fukumoto , Tetsuhiro Suzuki , Katsumi Suemitsu
IPC分类号： H01L27/115
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.
摘要翻译：本发明提供一种减小磁存储器中的无磁化层的开关场变化的新技术。根据本发明的磁存储器包括具有在第一方向上具有形状磁各向异性的铁磁层和磁应变常数为正的铁磁层的无磁化层; 以及构造成在与第一方向相同的方向上对所述无磁化层施加拉伸应力的应力诱导结构。

66. 发明申请

US20090135644A1 Magnetoresistive Element and Magnetic Random Access Memory 有权
标题翻译：磁阻元件和磁性随机存取存储器
公开(公告)号：US20090135644A1
公开(公告)日：2009-05-28
申请号：US12224396
申请日：2007-02-23
申请人： Ryusuke Nebashi , Tetsuhiro Suzuki
发明人： Ryusuke Nebashi , Tetsuhiro Suzuki
IPC分类号： G11C11/02 , H01L29/82 , G11C11/14 , G11C11/416
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： A magnetoresistive element includes a free layer a pinned layer; a nonmagnetic layer interposed between the free layer and the pinned layer; and two magnetic layers arranged adjacent to the free layer on an opposite side to the pinned layer. The free layer includes: a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer interposed between the first magnetic layer and the second magnetic layer. Magnetization of the first magnetic layer and magnetization of the second magnetic layer are antiferromagnetically coupled. One of the two magnetic layers is in contact with one end of the free layer in a long-axis direction, and the other of the two magnetic layers is in contact with the other end of the free layer in the long-axis direction.
摘要翻译：磁阻元件包括自由层钉扎层; 介于自由层和钉扎层之间的非磁性层; 以及在与被钉扎层相对的一侧上与自由层相邻布置的两个磁性层。自由层包括：第一磁性层，第二磁性层和介于第一磁性层和第二磁性层之间的第一非磁性层。第一磁性层的磁化和第二磁性层的磁化被反铁磁耦合。两个磁性层中的一个与长轴方向的自由层的一端接触，两个磁性层中的另一个与长轴方向的自由层的另一端接触。

67. 发明授权

US07254054B2 Magnetic random access memory and method for manufacturing the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US07254054B2
公开(公告)日：2007-08-07
申请号：US11380962
申请日：2006-05-01
申请人： Tetsuhiro Suzuki , Sadahiko Miura
发明人： Tetsuhiro Suzuki , Sadahiko Miura
IPC分类号： G11C11/00
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L43/08
摘要： A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.
摘要翻译：提供一种磁性随机存取存储器，包括基板，磁阻元件，其包括具有可逆自发磁化的铁磁层，该铁磁层根据自发磁化的方向而在电阻上变化，并且形成在基板上方，并且延伸在第一方向上用于产生电流以产生要施加到磁阻元件的磁场。所述布线形成为穿过比所述磁阻元件更靠近所述基板的第一位置，并且当从垂直于所述基板的主表面的方向观察时不与所述磁阻元件重叠，并且所述第二位置在所述磁阻元件

68. 发明授权

US6154348A Magnetoresistive head and method of initialization having a non-planar anti-ferromagnetic layer 失效
标题翻译：磁阻头和具有非平面反铁磁层的初始化方法
公开(公告)号：US6154348A
公开(公告)日：2000-11-28
申请号：US99529
申请日：1998-06-18
申请人： Tetsuhiro Suzuki
发明人： Tetsuhiro Suzuki
IPC分类号： G11B5/00 , G11B5/39 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/0008 , G11B2005/3996
摘要： A magnetoresistive head includes a first ferromagnetic layer and a non-magnetic material layer adjacent to a center portion of the first ferromagnetic layer. A second ferromagnetic layer is provided adjacent to the non-magnetic metal layer. An anti-ferromagnetic layer covers the second ferromagnetic layer and the first ferromagnetic layer. The anti-ferromagnetic layer is non-planar at an area adjacent to the non-magnetic metal layer and the second ferromagnetic layer. A pair of electrodes is provided adjacent to the two edges of the anti-ferromagnetic layer.
摘要翻译：磁阻头包括与第一铁磁层的中心部分相邻的第一铁磁层和非磁性材料层。在非磁性金属层附近提供第二铁磁层。反铁磁层覆盖第二铁磁层和第一铁磁层。反铁磁层在与非磁性金属层和第二铁磁层相邻的区域是非平面的。邻近反铁磁层的两个边缘设置一对电极。

69. 发明授权

US09082497B2 Magnetic memory using spin orbit interaction 有权
标题翻译：磁记忆使用自旋轨道相互作用
公开(公告)号：US09082497B2
公开(公告)日：2015-07-14
申请号：US14006008
申请日：2011-10-14
申请人： Tetsuhiro Suzuki
发明人： Tetsuhiro Suzuki
IPC分类号： G11C11/16 , H01L27/22 , H01L43/08 , H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/10
摘要： A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base layer. The magnetization reference layer is arranged on the barrier layer and has a fixed magnetization. When the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without through the magnetization reference layer.
摘要翻译：磁存储器包括：基层; 无磁化层; 阻挡层; 和磁化参考层。基层覆盖的磁化自由层具有可逆磁化强度，并大致均匀地磁化。无磁化层被覆盖的阻挡层由与基底层材料不同的材料构成。磁化参考层布置在阻挡层上并具有固定的磁化强度。当磁化自由层的磁化反转时，使第一写入电流在平面方向上从磁化自由层的一端流到另一端而不通过磁化参考层。

70. 发明授权

US07916520B2 Memory cell and magnetic random access memory 有权
标题翻译：存储单元和磁性随机存取存储器
公开(公告)号：US07916520B2
公开(公告)日：2011-03-29
申请号：US11574121
申请日：2005-08-19
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Tetsuhiro Suzuki
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Tetsuhiro Suzuki
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/15 , H01L43/08 , Y10S977/935
摘要： A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are placed corresponding to respective positions where a plurality of first wirings extended in a first direction intersects with a plurality of second wirings extended in a second direction which is substantially perpendicular to the first direction. The plurality of the laminated ferrimagnetic structure substances corresponds to the plurality of the magneto-resistive elements, respectively, is placed to have a distance of a predetermined range from the respective plurality of the magneto-resistive elements, and has a laminated ferrimagnetic structure. The magneto-resistive element includes a free layer having a laminated ferrimagnetic structure, a fixed layer, and a nonmagnetic layer interposed between the free layer and the fixed layer.
摘要翻译：使用包括多个磁阻元件和多个叠层铁磁结构物质的存储单元。多个磁阻元件对应于在第一方向上延伸的多个第一布线与基本上垂直于第一方向的第二方向延伸的多个第二布线相对应的相应位置放置。多个叠层铁氧体结构物质分别对应于多个磁阻元件，放置成距离相应的多个磁阻元件具有预定范围的距离，并具有叠层铁磁结构。磁阻元件包括层叠的铁磁结构，固定层和插入在自由层和固定层之间的非磁性层的自由层。

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