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61. 发明申请

US20060258062A1 PLASMA CVD METHOD 失效
标题翻译：等离子体CVD法
公开(公告)号：US20060258062A1
公开(公告)日：2006-11-16
申请号：US11427377
申请日：2006-06-29
申请人： Shunpei Yamazaki , Masaaki Hiroki , Mitsunori Sakama
发明人： Shunpei Yamazaki , Masaaki Hiroki , Mitsunori Sakama
IPC分类号： H01L21/84 , H01L21/31 , H01L21/00 , H01L21/469
CPC分类号： H01L21/02164 , C23C16/401 , C23C16/402 , C23C16/505 , H01L21/02274 , H01L21/31608 , H01L21/31612 , H01L29/66757 , H01L29/78621
摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is Gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.
摘要翻译：在通过等离子体CVD法形成以TEOS为原料的层间绝缘膜形成氧化硅膜116的过程中，RF输出以50W振荡，RF输出从50W逐渐升高至250W （在形成膜之后的输出值）（放电后（在产生O 2·2 - 等离子体）之后）。当RF输出变为250W时，或当定时偏移时，提供TEOS气体同时开始成膜。结果，由于在开始放电时RF电源以低输出振荡，因此可以防止RF电极之间的电压在很大程度上发生变化。

62. 发明授权

US06919282B2 Method of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06919282B2
公开(公告)日：2005-07-19
申请号：US10337724
申请日：2003-01-08
申请人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
发明人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
IPC分类号： H01L21/318 , G02B27/01 , H01L21/336 , H01L29/76 , H01L29/786 , H01L21/31
CPC分类号： H01L27/1259 , G02B27/017 , G02F1/133345 , G02F1/1362 , G02F2202/103 , G02F2202/105 , H01L27/1214 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/6675 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L2029/7863
摘要： A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.
摘要翻译：使用SiH 4 N，N 2 O和H 2 O等通过等离子体CVD制造氮氧化硅膜，并且将其施加到栅极绝缘膜（图1A中的1004）。氮氧化硅膜的特性主要通过改变N 2 O 2和H 2 O 2的流速来控制。可以通过增加H 2 2的流量来增加膜中的氢浓度和氮浓度。此外，可以降低膜中的氢浓度和氮浓度，以通过N 2 O 2 O的流量的增加来提高氧浓度。栅极绝缘膜确保TFT的特性的稳定性和可靠性，例如阈值电压（V SUB）和其阈值常数（S值）。

63. 发明授权

US06281147B1 Plasma CVD method 失效
标题翻译：等离子体CVD法
公开(公告)号：US06281147B1
公开(公告)日：2001-08-28
申请号：US09457128
申请日：1999-12-07
申请人： Shunpei Yamazaki , Mitsunori Sakama , Masaaki Hiroki
发明人： Shunpei Yamazaki , Mitsunori Sakama , Masaaki Hiroki
IPC分类号： H01L2131
CPC分类号： H01L21/02274 , C23C16/402 , C23C16/505 , H01L21/02164 , H01L21/31612
摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.
摘要翻译：在通过等离子体CVD法形成以TEOS为原料的层间绝缘膜形成氧化硅膜116的过程中，RF输出以50W振荡，RF输出从50W逐渐升高到250W （形成膜时的输出值）（放电后）（O 2等离子体生成后）。当RF输出变为250W时，或当定时偏移时，提供TEOS气体同时开始成膜。结果，由于在开始放电时RF电源以低输出振荡，因此可以防止RF电极之间的电压在很大程度上发生变化。

64. 发明授权

US4945226A Semiconductor photosensor and driving method therefor 失效
标题翻译：半导体光传感器及其驱动方法
公开(公告)号：US4945226A
公开(公告)日：1990-07-31
申请号：US263367
申请日：1988-10-27
申请人： Takeshi Fukuda , Nobumitsu Amachi , Mitsunori Sakama , Naoya Sakamoto , Shunpei Yamazaki
发明人： Takeshi Fukuda , Nobumitsu Amachi , Mitsunori Sakama , Naoya Sakamoto , Shunpei Yamazaki
IPC分类号： H01L31/0248 , G09G3/14 , H01L27/146 , H01L31/02 , H03K17/94
CPC分类号： H01L31/02016 , H03K17/941
摘要： A photosensing system is described. Light rays to be sensed is incident on a photosensitive semiconductor device which allows much current to pass therethrough during receiving the incident light and which passes a little current when there is no incident light. The current passing through the semiconductor device is accumulated in a suitable storage means. The accumulated charge is detected, in order to judge the existence or the absence of the incident light, a certain time period after the pulsed signal is outputted.
摘要翻译：描述了感光系统。要感测的光线入射到光敏半导体器件上，该光敏半导体器件在接收入射光时允许许多电流通过，并且当没有入射光时通过一点电流。通过半导体器件的电流被积累在合适的存储装置中。检测出累积电荷，以便在输出脉冲信号之后的某个时间段内判断入射光的存在或不存在。

65. 发明授权

US4820612A Electronic device and its manufacturing method 失效
标题翻译：电子器件及其制造方法
公开(公告)号：US4820612A
公开(公告)日：1989-04-11
申请号：US86646
申请日：1987-08-18
申请人： Akira Mase , Toshimitsu Konuma , Mitsunori Sakama , Takashi Inushima , Shunpei Yamazaki
发明人： Akira Mase , Toshimitsu Konuma , Mitsunori Sakama , Takashi Inushima , Shunpei Yamazaki
IPC分类号： B32B33/00 , B05D3/06 , B05D5/12 , H01L21/312 , H01L27/12 , H05K3/00 , G03C5/00
CPC分类号： H01L27/12
摘要： A method of forming an insulated, non-linear, multi-layered, electronic element on a transparent substrate by surrounding the element with a photosensitive organic resin layer and exposing the photosensitive layer to light from the side of the transparent substrate, the photosensitive layer being heat-hardened before and after the light exposure thereof so that the resulting insulating layer prevents electrical short circuits between the layers of the non-linear, multi-layered, electronic element.

66. 发明授权

US4744862A Manufacturing methods for nonlinear semiconductor element and liquid crystal display panel using the same 失效
标题翻译：非线性半导体元件和使用其的液晶显示面板的制造方法
公开(公告)号：US4744862A
公开(公告)日：1988-05-17
申请号：US155
申请日：1987-01-02
申请人： Shunpei Yamazaki , Akira Mase , Toshimitsu Konuma , Minoru Miyazaki , Mitsunori Sakama , Takashi Inushima
发明人： Shunpei Yamazaki , Akira Mase , Toshimitsu Konuma , Minoru Miyazaki , Mitsunori Sakama , Takashi Inushima
IPC分类号： G02F1/1365 , H01L21/77 , H01L21/84 , H01L29/167 , H01L29/868 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： G02F1/1365 , H01L27/1214 , H01L29/167 , H01L29/868
摘要： A method of manufacturing a liquid crystal display panel including preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface; forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member where the forming of the first non-single-crystal semiconductor laminate member includes forming at least a first non-single-crystal semiconductor of P (or N) type on the substrate, forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconduictor layer, the i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and forming a third non-single-crystal semiconductor layer of P (or N) type on the i-type second non-single-crystal semiconductor layer; forming a second conductive layer serving as a second electrode in a pattern on the first non-single-crystal semiconductor layer laminate layer in opposing relation to the first conductive layer; selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member; preparing a second substrate member by forming on a second substrate an insulating surface and a third conductive layer; and filling liquid crystal in a gap defined by the first and second substrate members.
摘要翻译：一种制造液晶显示面板的方法，包括通过在具有绝缘表面的第一衬底上形成用作第一电极的第一导电层来制备第一衬底构件; 在所述第一基板部件上形成第一非单晶半导体层叠层，其中所述第一非单晶半导体层叠部件的形成包括至少形成P（或N）型的第一非单晶半导体在所述基板上，在所述第一非单晶半导体层上形成i型第二非单晶半导体层，所述i型层含有选自碳，氮，氧，硼，和其混合物，并在i型第二非单晶半导体层上形成P（或N）型的第三非单晶半导体层; 在与第一导电层相对的第一非单晶半导体层叠层上以图案形成用作第二电极的第二导电层; 通过所述图案化的第二导电层选择性地蚀刻掉所述第一非单晶半导体层层叠构件以获得第二非单晶半导体层叠构件; 通过在第二基板上形成绝缘表面和第三导电层来制备第二基板部件; 以及将液晶填充在由所述第一和第二基板构件限定的间隙中。

67. 发明授权

US4691995A Liquid crystal filling device 失效
标题翻译：液晶灌装装置
公开(公告)号：US4691995A
公开(公告)日：1987-09-08
申请号：US885662
申请日：1986-07-15
申请人： Shunpei Yamazaki , Toshimitsu Konuma , Toshiji Hamatani , Akira Mase , Kaoru Koyanagi , Shinji Imato , Toshiharu Yamaguchi , Mitsunori Sakama , Takashi Inujima
发明人： Shunpei Yamazaki , Toshimitsu Konuma , Toshiji Hamatani , Akira Mase , Kaoru Koyanagi , Shinji Imato , Toshiharu Yamaguchi , Mitsunori Sakama , Takashi Inujima
IPC分类号： G02F1/1341 , G02F1/13
CPC分类号： G02F1/1341 , G02F2001/13415 , Y10S359/90
摘要： An improved liquid crystal filling device is shown. Prior to joining a substrate with another substrate between which the liquid crystal is to be charged, the liquid crystal is dropped on the substrate and then the other substrate is superimposed on the substrate under pressure. Sandwiched between the substrates, the liquid crystal spreads at high temperature.
摘要翻译：示出了改进的液晶填充装置。在将液晶与另一基板接合的基板之前，将液晶滴在基板上，然后将另一基板在压力下叠加在基板上。在基板之间夹杂，液晶在高温下扩散。

68. 发明授权

US07372114B2 Semiconductor device, and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07372114B2
公开(公告)日：2008-05-13
申请号：US11544593
申请日：2006-10-10
申请人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
发明人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
IPC分类号： H01L29/94 , H01L31/062
CPC分类号： H01L27/1259 , G02B27/017 , G02F1/133345 , G02F1/1362 , G02F2202/103 , G02F2202/105 , H01L27/1214 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/6675 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L2029/7863
摘要： A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.
摘要翻译：使用SiH 4 N，N 2 O和H 2 O等通过等离子体CVD制造氮氧化硅膜，并且将其施加到栅极绝缘膜（图1A中的1004）。氮氧化硅膜的特性主要通过改变N 2 O 2和H 2 O 2的流速来控制。可以通过增加H 2 2的流量来增加膜中的氢浓度和氮浓度。此外，可以降低膜中的氢浓度和氮浓度，以通过N 2 O 2 O的流量的增加来提高氧浓度。栅极绝缘膜确保TFT的特性的稳定性和可靠性，例如阈值电压（V SUB）和其阈值常数（S值）。

69. 发明申请

US20070173046A1 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device 失效
标题翻译：基板处理装置及方法以及薄膜半导体装置的制造方法
公开(公告)号：US20070173046A1
公开(公告)日：2007-07-26
申请号：US11727257
申请日：2007-03-26
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

70. 发明申请

US20070029626A1 Semiconductor device, and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070029626A1
公开(公告)日：2007-02-08
申请号：US11544593
申请日：2006-10-10
申请人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
发明人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
IPC分类号： H01L29/94 , H01L23/58
CPC分类号： H01L27/1259 , G02B27/017 , G02F1/133345 , G02F1/1362 , G02F2202/103 , G02F2202/105 , H01L27/1214 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/6675 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L2029/7863
摘要： A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.
摘要翻译：使用SiH 4 N，N 2 O和H 2 O等通过等离子体CVD制造氮氧化硅膜，并且将其施加到栅极绝缘膜（图1A中的1004）。氮氧化硅膜的特性主要通过改变N 2 O 2和H 2 O 2的流速来控制。可以通过增加H 2 2的流量来增加膜中的氢浓度和氮浓度。此外，可以降低膜中的氢浓度和氮浓度，以通过N 2 O 2 O的流量的增加来提高氧浓度。栅极绝缘膜确保TFT的特性的稳定性和可靠性，例如阈值电压（V SUB）和其阈值常数（S值）。

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