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61. 发明申请

US20110240994A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110240994A1
公开(公告)日：2011-10-06
申请号：US13074658
申请日：2011-03-29
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78606
摘要： An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film, a metal oxide film which is partly in contact with the oxide semiconductor film, a gate insulating film which is over and in contact with the metal oxide film, and a gate electrode over the gate insulating film. With such a structure, effect of charge on the oxide semiconductor film can be relaxed; thus, shift of the threshold voltage in the transistor, due to charge trapping at an interface of the oxide semiconductor film, can be suppressed.
摘要翻译：目的在于提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。半导体器件包括与氧化物半导体膜电连接的氧化物半导体膜，源电极和漏电极，部分与氧化物半导体膜接触的金属氧化物膜，位于与金属氧化物膜接触，并在栅极绝缘膜上方形成栅电极。通过这样的结构，可以放电对氧化物半导体膜的电荷的影响; 因此，可以抑制由于在氧化物半导体膜的界面处的电荷捕获而导致的晶体管中的阈值电压的偏移。

62. 发明申请

US20110233557A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110233557A1
公开(公告)日：2011-09-29
申请号：US13108021
申请日：2011-05-16
申请人： Shunpei YAMAZAKI , Toru TAKAYAMA , Mai AKIBA
发明人： Shunpei YAMAZAKI , Toru TAKAYAMA , Mai AKIBA
IPC分类号： H01L33/16
CPC分类号： H01L51/0097 , H01L27/3244 , H01L27/326 , H01L51/5237 , H01L51/5253 , H01L51/5256 , H01L51/529 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2251/5315 , H01L2251/5338
摘要： The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.
摘要翻译：本发明的目的是提供一种发光装置，其包括形成在塑料基板上的OLED，其能够防止由于水分或氧气的渗透而导致的劣化。在塑料基板上，用于防止氧或水分渗入OLED中的有机发光层的多个膜（以下称为阻挡膜）和具有比阻挡膜的应力小的膜（以下称为“ 被称为应力缓和膜），膜被插入在阻挡膜之间。由于多个阻挡膜的层压结构，即使在一个阻挡膜中发生裂纹，另一个阻挡膜可以有效地防止水分或氧气渗入有机发光层。此外，在阻挡膜之间插入有比阻挡膜小的应力的应力缓和膜，从而可以减小整个密封膜的应力。结果，几乎不发生由于应力引起的裂纹。

63. 发明申请

US20110230018A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110230018A1
公开(公告)日：2011-09-22
申请号：US13116379
申请日：2011-05-26
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L29/78696 , H01L27/124 , H01L27/127 , H01L27/3262 , H01L29/4908 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L33/0041 , H01L2029/7863
摘要： The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween
摘要翻译：本发明的目的是提供一种包括具有低布线电阻的大面积集成电路的TFT的可靠的半导体器件。本发明的特征之一是在一个TFT中设置包括与栅电极重叠的区域和不与栅电极重叠的区域的LDD区域。本发明的另一特征在于，栅电极包括第一导电层和第二导电层，并且栅极配线的一部分具有包含第一导电层和第二导电层的包层结构，其间具有低电阻层

64. 发明申请

US20110227137A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20110227137A1
公开(公告)日：2011-09-22
申请号：US13151299
申请日：2011-06-02
申请人： Ryoji NOMURA , Hiroko ABE , Yuji IWAKI , Shunpei YAMAZAKI
发明人： Ryoji NOMURA , Hiroko ABE , Yuji IWAKI , Shunpei YAMAZAKI
IPC分类号： H01L31/09 , H01L31/0352 , B82Y99/00
CPC分类号： G11C16/22 , B82Y10/00 , G11C13/0014 , G11C13/0059 , G11C13/04 , G11C17/16 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0051 , H01L51/0059
摘要： The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.
摘要翻译：本发明提供了一种半导体器件，其包括具有包括多个存储单元的存储单元阵列的存储器，控制存储器的控制电路和天线，其中存储单元阵列具有在第一方向和沿与第一方向不同的第二方向延伸的多个字线，并且多个存储单元中的每一个具有设置在位线和字线之间的有机化合物层。通过向有机化合物层施加光学或电动作来写入数据。

65. 发明申请

US20110227126A1 ELECTRONICS DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电子设备，半导体器件及其制造方法
公开(公告)号：US20110227126A1
公开(公告)日：2011-09-22
申请号：US13150614
申请日：2011-06-01
申请人： Shunpei YAMAZAKI , Masaharu NAGAI , Osamu NAKAMURA
发明人： Shunpei YAMAZAKI , Masaharu NAGAI , Osamu NAKAMURA
IPC分类号： H01L33/48 , H01L23/053
CPC分类号： H01L27/3244 , G02F1/13454 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L51/5246 , H01L51/529 , H01L2251/5323
摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.
摘要翻译：本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜）由硅（Si）和氧（O）的组合构成。在形成之后，形成具有锥形形状的边缘部分或开口部分。然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

66. 发明申请

US20110220983A1 METHOD FOR DELETING DATA FROM NAND TYPE NONVOLATILE MEMORY 有权
标题翻译：从NAND型非易失性存储器中删除数据的方法
公开(公告)号：US20110220983A1
公开(公告)日：2011-09-15
申请号：US13114556
申请日：2011-05-24
申请人： Mitsuaki OSAME , Hiroyuki MIYAKE , Aya MIYAZAKI , Shunpei YAMAZAKI
发明人： Mitsuaki OSAME , Hiroyuki MIYAKE , Aya MIYAZAKI , Shunpei YAMAZAKI
IPC分类号： H01L29/788
CPC分类号： G11C16/14 , G11C8/10 , G11C16/0483 , G11C16/08 , H01L21/28273 , H01L27/105 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L27/11546
摘要： To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for deleting data from the NAND-type nonvolatile memory, charges stored in a charge accumulating layer of a first nonvolatile memory element are released by applying a first potential to a bit line and a source line, a second potential to a control gate of the first nonvolatile memory element, and a third potential which is different from the second potential to a control gate of a second nonvolatile memory element.
摘要翻译：作为从NAND型非易失性存储器中删除数据的方法，提供一种释放已经注入到非易失性存储元件的电荷累积层中的电荷的方法，而不使用诸如p阱或n阱的衬底端子。在从NAND型非易失性存储器中删除数据的方法中，通过将第一电位施加到位线和源极线，将第二电位施加到控制栅极来释放存储在第一非易失性存储元件的电荷累积层中的电荷以及与第二电位不同的第三电位连接到第二非易失性存储元件的控制栅极。

67. 发明申请

US20110215385A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110215385A1
公开(公告)日：2011-09-08
申请号：US13037686
申请日：2011-03-01
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L27/11521 , H01L27/11524 , H01L27/1156 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/45 , H01L29/66969
摘要： An object is to provide a semiconductor device which achieves miniaturization as well as suppressing a defect. Further, another object is to provide a semiconductor device which achieves miniaturization as well as keeping favorable characteristics. Is provided a semiconductor device including: a source wiring and a drain wiring each of which include a first conductive layer and a second conductive layer having a smaller thickness than the first conductive layer; an insulating layer which has an opening portion and is provided over the source wiring and the drain wiring; an oxide semiconductor layer which is in contact with part of the second conductive layer of the source wiring or the drain wiring in the opening portion; a gate insulating layer provided over the oxide semiconductor layer; and a gate electrode provided over the gate insulating layer.
摘要翻译：目的在于提供实现小型化以及抑制缺陷的半导体装置。此外，另一个目的是提供实现小型化以及保持有利特性的半导体器件。提供一种半导体器件，包括：源极布线和漏极布线，其中每个包括具有比第一导电层小的厚度的第一导电层和第二导电层; 绝缘层，其具有开口部，设置在源极配线和漏极配线之上; 氧化物半导体层，其与所述源极配线的所述第二导电层的一部分或所述开口部的所述漏极配线接触; 设置在所述氧化物半导体层上的栅极绝缘层; 以及设置在栅绝缘层上的栅电极。

68. 发明申请

US20110215318A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20110215318A1
公开(公告)日：2011-09-08
申请号：US13104540
申请日：2011-05-10
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
IPC分类号： H01L33/08 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/66969 , H01L29/78696
摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

69. 发明申请

US20110212596A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110212596A1
公开(公告)日：2011-09-01
申请号：US13106158
申请日：2011-05-12
申请人： Akihisa SHIMOMURA , Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
发明人： Akihisa SHIMOMURA , Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02675 , H01L21/2007
摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.
摘要翻译：要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。激光照射在还原气氛或惰性气氛下进行。

70. 发明申请

US20110212558A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20110212558A1
公开(公告)日：2011-09-01
申请号：US13101766
申请日：2011-05-05
申请人： Shunpei YAMAZAKI , Shinji MAEKAWA , Gen Fujii , Hideaki KUWABARA
发明人： Shunpei YAMAZAKI , Shinji MAEKAWA , Gen Fujii , Hideaki KUWABARA
IPC分类号： H01L21/336
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , G02F2001/13415 , G02F2001/136295 , H01L27/1292
摘要： As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern.
摘要翻译：由于重复膜形成和蚀刻，衬底越来越大，制造时间增加; 蚀刻剂等的废物处理成本增加; 材料效率显着降低。在本发明中形成了用于改善基板和通过液滴喷射方法形成的材料层之间的粘附性的基膜。此外，根据本发明的液晶显示装置的制造方法包括至少一个步骤，用于形成在不使用光掩模的情况下制造液晶显示装置所需的以下图案：以布线为代表的材料层的图案（或电极）图案，绝缘层图案; 或用于形成另一图案的掩模图案。

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