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61. 发明授权

US07875530B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07875530B2
公开(公告)日：2011-01-25
申请号：US11602261
申请日：2006-11-21
申请人： Tomoko Tamura , Tomoyuki Aoki , Takuya Tsurume , Koji Dairiki
发明人： Tomoko Tamura , Tomoyuki Aoki , Takuya Tsurume , Koji Dairiki
IPC分类号： H01L21/00 , H01L21/46 , H01L21/30
CPC分类号： H01L27/1266 , H01L27/1214
摘要： First semiconductor integrated circuits and second semiconductor integrated circuits arranged over a first substrate so that each of the second semiconductor integrated circuits is adjacent to one of the first semiconductor integrated circuits are transferred to additional substrates through multiple transfer operations. After the first semiconductor integrated circuits and the second semiconductor integrated circuits formed over the first substrate are transferred to the additional substrates (a fourth substrate and a fifth substrate) respectively, the circuits are divided into a semiconductor device corresponding to each semiconductor integrated circuit. The first semiconductor integrated circuits are arranged while keeping a distance from each other over the fourth substrate, and the second semiconductor integrated circuits are arranged while keeping a distance from each other over the fifth substrate. Thus, a large division margin of each of the fourth substrate and the fifth substrate can be obtained.
摘要翻译：第一半导体集成电路和第二半导体集成电路布置在第一基板上，使得第二半导体集成电路中的每一个与第一半导体集成电路之一相邻，通过多次传送操作被传送到附加的基板。在第一半导体集成电路和形成在第一衬底上的第二半导体集成电路分别转移到附加衬底（第四衬底和第五衬底）之后，将电路分成对应于每个半导体集成电路的半导体器件。第一半导体集成电路在第四衬底上彼此保持距离的同时被布置，并且第二半导体集成电路被布置成在第五衬底上彼此保持距离。因此，可以获得第四基板和第五基板中的每一个的大分割裕度。

62. 发明授权

US07851886B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US07851886B2
公开(公告)日：2010-12-14
申请号：US11812813
申请日：2007-06-21
申请人： Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Eiji Sugiyama , Kaori Ogita , Naoto Kusumoto
发明人： Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Eiji Sugiyama , Kaori Ogita , Naoto Kusumoto
IPC分类号： H01L29/06
CPC分类号： H01L23/293 , H01L23/49855 , H01L23/66 , H01L27/1248 , H01L27/1266 , H01L27/13 , H01L28/10 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.
摘要翻译：本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值在导电层上形成的绝缘层与导电层的厚度比为至少0.2。此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

63. 发明申请

US20100120205A1 MANUFACTURING METHOD OF WIRING BOARD AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：接线板和半导体器件的制造方法
公开(公告)号：US20100120205A1
公开(公告)日：2010-05-13
申请号：US12690992
申请日：2010-01-21
申请人： Junya Maruyama , Tomoyuki Aoki
发明人： Junya Maruyama , Tomoyuki Aoki
IPC分类号： H01L21/50 , C25D1/00 , C25D5/48
CPC分类号： H05K3/205 , H01L2224/11 , H01L2924/12044 , H05K3/245 , H05K2203/0117 , Y10T29/49016 , Y10T29/49018 , Y10T29/49117 , Y10T29/49144 , Y10T29/49155 , Y10T29/49224 , H01L2924/00
摘要： A manufacturing method of a wiring board and a semiconductor device at low cost and by a simple process, without performing complicated steps many times is proposed. Furthermore, a manufacturing method of a wiring board at low cost and with fewer adverse effects on the environment, and a manufacturing method of a semiconductor device using the wiring board are proposed. A pattern of a conductive material is formed over a first substrate, a conductive film is formed over the pattern by an electrolytic plating process, the pattern and the conductive film are separated, an IC chip including at least one thin film transistor is formed over a second substrate, and the conductive film is electrically connected to the IC chip.
摘要翻译：提出了一种以低成本和简单的方法制造布线板和半导体器件的方法，而不需要多次复杂的步骤。此外，提出了一种低成本并且对环境的不利影响较少的布线板的制造方法以及使用该布线板的半导体装置的制造方法。导电材料的图形形成在第一基板上，通过电解电镀工艺在图案上形成导电膜，图案和导电膜被分离，包括至少一个薄膜晶体管的IC芯片形成在第二基板，并且导电膜电连接到IC芯片。

64. 发明授权

US07713836B2 Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device 失效
标题翻译：用于形成导电层的方法和具有该导电层的基板，以及用于制造半导体器件的方法
公开(公告)号：US07713836B2
公开(公告)日：2010-05-11
申请号：US11902799
申请日：2007-09-25
申请人： Tomoyuki Aoki , Takuya Tsurume , Daiki Yamada
发明人： Tomoyuki Aoki , Takuya Tsurume , Daiki Yamada
IPC分类号： H01L21/30
CPC分类号： H05K3/207 , H01L24/97 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05568 , H01L2224/05572 , H01L2224/16225 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01056 , H01L2924/01058 , H01L2924/0106 , H01L2924/01067 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07811 , H01L2924/10253 , H01L2924/10329 , H01L2924/12044 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H05K1/0393 , H05K3/386 , H05K2201/0239 , H05K2203/016 , H05K2203/0531 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： A separation layer is formed over a substrate having a depressed portion, using a silane coupling agent; a conductive layer and an insulating layer that covers the conductive layer are formed in the depressed portion over the separation layer; and a sticky member is attached to the insulating layer, then the conductive layer and the insulating layer are separated from the substrate. Alternatively, after these steps, a flexible substrate is attached to the conductive layer and the insulating layer.
摘要翻译：使用硅烷偶联剂在具有凹陷部的基板上形成分离层; 覆盖导电层的导电层和绝缘层形成在分离层上的凹陷部分中; 并且将粘性构件附接到绝缘层，然后将导电层和绝缘层与基板分离。或者，在这些步骤之后，将柔性基板附着到导电层和绝缘层。

65. 发明授权

US07685706B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07685706B2
公开(公告)日：2010-03-30
申请号：US11474934
申请日：2006-06-27
申请人： Junya Maruyama , Tomoyuki Aoki
发明人： Junya Maruyama , Tomoyuki Aoki
IPC分类号： H05K3/02 , H05K3/10
CPC分类号： H05K3/205 , H01L2224/11 , H01L2924/12044 , H05K3/245 , H05K2203/0117 , Y10T29/49016 , Y10T29/49018 , Y10T29/49117 , Y10T29/49144 , Y10T29/49155 , Y10T29/49224 , H01L2924/00
摘要： A manufacturing method of a wiring board and a semiconductor device at low cost and by a simple process, without performing complicated steps many times is proposed. Furthermore, a manufacturing method of a wiring board at low cost and with fewer adverse effects on the environment, and a manufacturing method of a semiconductor device using the wiring board are proposed. A pattern of a conductive material is formed over a first substrate, a conductive film is formed over the pattern by an electrolytic plating process, the pattern and the conductive film are separated, an IC chip including at least one thin film transistor is formed over a second substrate, and the conductive film is electrically connected to the IC chip.
摘要翻译：提出了一种以低成本和简单的方法制造布线板和半导体器件的方法，而不需要多次复杂的步骤。此外，提出了一种低成本并且对环境的不利影响较少的布线板的制造方法以及使用该布线板的半导体装置的制造方法。导电材料的图形形成在第一基板上，通过电解电镀工艺在图案上形成导电膜，图案和导电膜被分离，包括至少一个薄膜晶体管的IC芯片形成在第二基板，并且导电膜电连接到IC芯片。

66. 发明申请

US20090292381A1 PRODUCTION PLANNING METHOD AND PRODUCTION PLANNING SYSTEM FOR MIXED FLOWS OF PRODUCTION BY ORDER AND FORECASTING 审中-公开
标题翻译：混合生产流程的生产计划方法和生产计划制度按订单和预计
公开(公告)号：US20090292381A1
公开(公告)日：2009-11-26
申请号：US11813048
申请日：2006-09-08
申请人： Shota Inoue , Tomoyuki Aoki , Yuichi Nakamura , Takaaki Yoshida
发明人： Shota Inoue , Tomoyuki Aoki , Yuichi Nakamura , Takaaki Yoshida
IPC分类号： G06F17/00 , G06Q10/00 , G06Q50/00
CPC分类号： G05B19/41865 , G05B2219/32258 , G05B2219/32263 , G06Q10/06 , G06Q10/0637 , G06Q10/087 , Y02P90/20
摘要： In the production process where an ordered article and a forecast production article are mixed, parameters for defining production priority of each article are preset while assuming a case where the demand exceeds the available production capability, and priority is given to an article which must be produced first within the range of available production capability according to the marginal stock rate of each article. The marginal stock rate is determined by (effective stock amount/necessary stock amount) for a forecast production article. As for the ordered production article, a stock sufficient for delivery is required at the time of shipment. Accordingly, stock of that quantity (demand take-in amount) can be regarded as the necessary amount of stock while the currently completed products can be regarded as the effective stock amount. Thus, the marginal stock rate (effective stock amount/demand take-in amount) can be indexed.
摘要翻译：在订购物品和预测生产物品混合的生产过程中，假设每个物品的生产优先权的参数预先设定为需求超过可用生产能力的情况，并且优先考虑必须生产的物品首先根据每篇文章的边际库存率在可用生产能力的范围内。边际库存率由预测生产物品（有效库存量/必需库存量）确定。对于订购的生产物品，在装运时需要一批足够的货物。因此，该数量的库存（需求购入金额）可以被认为是必需的库存量，而目前完成的产品可以被视为有效库存量。因此，边际股票价格（有效库存量/需求买入金额）可以索引。

67. 发明申请

US20090102055A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20090102055A1
公开(公告)日：2009-04-23
申请号：US11919635
申请日：2006-05-26
申请人： Tomoyuki Aoki , Koji Dairiki , Yuugo Goto
发明人： Tomoyuki Aoki , Koji Dairiki , Yuugo Goto
IPC分类号： H01L23/52
CPC分类号： H01L27/13 , G06K19/07749 , H01L21/6835 , H01L23/5227 , H01L23/552 , H01L23/576 , H01L23/585 , H01L27/105 , H01L27/11509 , H01L27/11526 , H01L27/11546 , H01L27/1203 , H01L27/124 , H01L27/1266 , H01L29/78618 , H01L2221/6835 , H01L2221/68368 , H01L2924/0002 , H01L2924/12044 , H01L2924/30105 , H01Q1/2208 , H01L2924/00
摘要： It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.
摘要翻译：本发明的目的是提供可以保护消费者或商业产品持有人的隐私的半导体器件，并且即使当可以将交换数据而没有接触的半导体器件安装在商业产品上时，也可以根据使用来控制通信范围。本发明的半导体器件包括在衬底上包括多个晶体管的元件组; 用作元件组上的天线的第一导电膜; 围绕所述第一导电膜的第二导电膜; 覆盖所述第一和第二端部的绝缘膜; 和绝缘膜上的第三导电膜。第一导电膜设置为线圈形状，并且第一导电膜的每个端部连接到元件组。第二导电膜的第一端部和第二端部彼此不连接。

68. 发明授权

US07504317B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07504317B2
公开(公告)日：2009-03-17
申请号：US11600070
申请日：2006-11-16
申请人： Tomoyuki Aoki , Tomoko Tamura , Takuya Tsurume , Koji Dairiki
发明人： Tomoyuki Aoki , Tomoko Tamura , Takuya Tsurume , Koji Dairiki
IPC分类号： H01L21/46
CPC分类号： H01L27/1266 , H01L21/78 , H01L27/1214
摘要： It is an object to provide a manufacturing method of a semiconductor device with high reliability. A plurality of first semiconductor integrated circuits, a plurality of second semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits and one of the second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, one of the second semiconductor integrated circuits, and one of the third semiconductor integrated circuits are formed over a first substrate. The first semiconductor integrated circuits are transferred to a second substrate. A first protective layer is formed to cover the first semiconductor integrated circuits and a surface of the second substrate in the periphery of the first semiconductor integrated circuits. The second substrate and the first protective layer are divided so that the plurality of the first semiconductor integrated circuits is divided into individual pieces and part of the second substrate remains in the periphery of the first semiconductor integrated circuits. Accordingly, a semiconductor device having the first semiconductor integrated circuit is manufactured.
摘要翻译：本发明的目的是提供一种高可靠性的半导体器件的制造方法。多个第一半导体集成电路，多个第二半导体集成电路，每个第二半导体集成电路被布置为与第一半导体集成电路之一相邻，多个第三半导体集成电路被布置为与第一半导体集成电路和第二半导体集成电路之一，以及多个第四半导体集成电路，每个第四半导体集成电路被布置为与第一半导体集成电路之一相邻，第二半导体集成电路之一和第二半导体集成电路之一第三半导体集成电路形成在第一基板上。第一半导体集成电路被转移到第二衬底。形成第一保护层以覆盖第一半导体集成电路和第一半导体集成电路的周边中的第二基板的表面。第二基板和第一保护层被分割成使得多个第一半导体集成电路被分成单独的部分，并且第二基板的一部分保留在第一半导体集成电路的周围。因此，制造具有第一半导体集成电路的半导体器件。

69. 发明申请

US20080108205A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080108205A1
公开(公告)日：2008-05-08
申请号：US12000599
申请日：2007-12-14
申请人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
发明人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
IPC分类号： H01L21/44 , H01L21/02
CPC分类号： H01L31/0203 , H01L27/1446 , H01L27/14618 , H01L31/048 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
摘要翻译：本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以使其安装在高密度的布线板上，并且还提供其制造方法。根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部一部分。

70. 发明申请

US20070252181A1 Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having the semiconductor device 有权
标题翻译：半导体装置，半导体装置的制造方法以及具有该半导体装置的电子设备
公开(公告)号：US20070252181A1
公开(公告)日：2007-11-01
申请号：US11790481
申请日：2007-04-25
申请人： Daiki Yamada , Tomoyuki Aoki
发明人： Daiki Yamada , Tomoyuki Aoki
IPC分类号： H01L29/76
CPC分类号： H01L24/10 , H01L24/13 , H01L2224/13 , H01L2224/13019 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/48091 , H01L2224/48247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0106 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2924/19042 , H01L2924/19043 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： In order to connect a semiconductor device including an integrated circuit to an external circuit typified by an antenna, the shape of the contact electrode to be formed in the semiconductor device is devised, so that bad connection between the external circuit and the contact electrode is not easily caused and the contact electrode with high reliability is provided. The contact electrode is formed by a screen printing method using a squeegee having a chamfered corner or having a wedge shape. The contact electrode has a peripheral portion and a central portion. The peripheral portion has a tapered portion with its film thickness gradually decreasing from the central portion toward the end portion, and the central portion has a projection portion that continues from the tapered portion.
摘要翻译：为了将包括集成电路的半导体装置连接到以天线为代表的外部电路，设计形成在半导体装置中的接触电极的形状，使得外部电路与接触电极之间的连接不良容易引起，并且提供了高可靠性的接触电极。接触电极通过使用具有倒角或具有楔形的刮板的丝网印刷法形成。接触电极具有周边部分和中心部分。周边部分具有其中心部分朝向端部逐渐减小的锥形部分，并且中心部分具有从锥形部分延伸的突出部分。

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