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61. 发明授权

US08313704B2 Spouted bed device, polyolefin production system with spouted bed device, and polyolefin production process 有权
标题翻译：喷射床装置，具有喷射床装置的聚烯烃生产系统和聚烯烃生产过程
公开(公告)号：US08313704B2
公开(公告)日：2012-11-20
申请号：US12332112
申请日：2008-12-10
申请人： Hiroyuki Ogawa , Hideki Sato , Hiroshi Ueda
发明人： Hiroyuki Ogawa , Hideki Sato , Hiroshi Ueda
IPC分类号： B01J8/18 , B01J19/00 , C08F2/34
CPC分类号： C08F10/00 , B01J8/0055 , B01J8/245 , B01J2208/00274 , B01J2208/00283 , B01J2208/00292 , B01J2208/00575 , C08F110/06 , C08F2/01 , C08F2/001 , C08F2/34
摘要： A spouted bed device according to the present invention includes a vertically extending cylinder; a decreasing diameter member which is formed on the cylinder, has an inside diameter that decreases progressively downward, and has a gas inlet orifice at a bottom end thereof; and a tubular portion which extends downward from an edge of the gas inlet orifice. A spouted bed is formed in a treatment zone enclosed by a top surface of the decreasing diameter member and an inner wall of the cylinder above the decreasing diameter member.
摘要翻译：根据本发明的喷射床装置包括垂直延伸的气缸; 形成在气缸上的直径减小的构件具有逐渐向下减小的内径，并且在其底端具有气体入口孔; 以及从气体入口孔的边缘向下延伸的管状部分。在由直径减小的构件的顶面包围的处理区域中形成喷射床，并且在直径减小的构件上方形成圆柱体的内壁。

62. 发明申请

US20120244991A1 CONTINUOUSLY VARIABLE TRANSMISSION 有权
标题翻译：连续可变传输
公开(公告)号：US20120244991A1
公开(公告)日：2012-09-27
申请号：US12997050
申请日：2009-12-02
申请人： Takahiro Shiina , Akira Murakami , Hiroyuki Ogawa , Daisuke Tomomatsu
发明人： Takahiro Shiina , Akira Murakami , Hiroyuki Ogawa , Daisuke Tomomatsu
IPC分类号： F16H15/40
CPC分类号： F16H15/52
摘要： A continuously variable transmission having a continuously variable transmission mechanism including an input member, an output member, and a rotary member sandwiched therebetween, transmitting torque between the input member and the output member by means of frictional forces generated by pushing the input member and the output member against the rotary member, and continuously varying a transmission gear ratio between the input member and the output member, an axial force generating portion which rotates in one direction to generate a first axial force for pushing one of the input member and the output member toward the other and rotates in the other direction to generate a second axial force opposite to the first force, and an opposite axial force transmitting portion for transmitting the second force to the other of the input member and the output member when the axial force generating portion generates the second force.
摘要翻译：一种无级变速器，具有无级变速传动机构，其包括输入部件，输出部件和夹在其间的旋转部件，通过将输入部件和输出部件的推压产生的摩擦力在输入部件与输出部件之间传递转矩并且连续地改变所述输入构件和所述输出构件之间的传动齿轮比;轴向力产生部，其在一个方向上旋转以产生用于将所述输入构件和所述输出构件中的一个推向所述输出构件的第一轴向力另一方向并沿另一方向旋转，产生与第一力相反的第二轴向力，以及相反的轴向力传递部，用于当轴向力产生部产生时将第二力传递到输入构件和输出构件中的另一个第二个力量

63. 发明申请

US20120193635A1 SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE EQUIPPED WITH THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，用于制造半导体器件的工艺，以及配备半导体器件的显示器件
公开(公告)号：US20120193635A1
公开(公告)日：2012-08-02
申请号：US13500023
申请日：2010-09-21
申请人： Hiroshi Matsukizono , Tomohiro Kimura , Hiroyuki Ogawa
发明人： Hiroshi Matsukizono , Tomohiro Kimura , Hiroyuki Ogawa
IPC分类号： H01L29/786 , H01L21/20 , H01L29/02
CPC分类号： G02F1/1362 , G02F1/13318 , G02F1/13338 , H01L27/1214
摘要： A thin film diode (100A) includes a semiconductor layer (130) having first, second, and third semiconductor regions, a first insulating layer (122) formed on the semiconductor layer (130), and a second insulating layer (123) formed on the first insulating layer (122). The first semiconductor region (134A) contains an impurity of a first-conductivity type at a first concentration; the second semiconductor region (135A) contains an impurity of a second-conductivity type different from the first conductivity type at a second concentration; and the third semiconductor region (133A) contains the first-conductivity type impurity at a third concentration lower than the first concentration, or contains the second-conductivity type impurity at a third concentration lower than the second concentration. The first semiconductor region (134A) conforms to an aperture pattern in the second insulating layer (123), or the second semiconductor region (135A) conforms to an aperture pattern in the second insulating layer (123).
摘要翻译：薄膜二极管（100A）包括具有第一，第二和第三半导体区域的半导体层（130），形成在半导体层（130）上的第一绝缘层（122）和形成在第一绝缘层第一绝缘层（122）。第一半导体区域（134A）含有第一浓度的第一导电类型的杂质; 第二半导体区域（135A）在第二浓度下含有不同于第一导电类型的第二导电类型的杂质; 并且第三半导体区域（133A）含有比第一浓度低的第三浓度的第一导电型杂质，或者包含第二浓度低于第二浓度的第三浓度的第二导电型杂质。第一半导体区域（134A）符合第二绝缘层（123）中的孔径图案，或者第二半导体区域（135A）符合第二绝缘层（123）中的孔径图案。

64. 发明授权

US08173514B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08173514B2
公开(公告)日：2012-05-08
申请号：US12369859
申请日：2009-02-12
申请人： Jusuke Ogura , Hikaru Kokura , Hideyuki Kojima , Toru Anezaki , Hiroyuki Ogawa , Junichi Ariyoshi
发明人： Jusuke Ogura , Hikaru Kokura , Hideyuki Kojima , Toru Anezaki , Hiroyuki Ogawa , Junichi Ariyoshi
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/823481 , H01L27/1052 , H01L27/11521
摘要： A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching.
摘要翻译：制造半导体器件的方法包括在半导体衬底中形成限定有源区的隔离区，在半导体衬底上形成第一绝缘膜，形成第二绝缘膜，该第二绝缘膜具有与第一绝缘膜相同的蚀刻性能绝缘膜，通过使用基于碳氟化合物的蚀刻气体的干蚀刻从有源区域和隔离区域上的第一区域选择性地去除第二绝缘膜，通过在第一绝缘膜上暴露于第一绝缘膜上形成的残留膜含氧的气氛，通过湿式蚀刻从第一区域选择性地除去第一绝缘膜。

65. 发明授权

US08163246B2 Spouted-fluidized bed-type olefin polymerization reactor 有权
标题翻译：喷射流化床型烯烃聚合反应器
公开(公告)号：US08163246B2
公开(公告)日：2012-04-24
申请号：US12795432
申请日：2010-06-07
申请人： Hideki Sato , Hiroyuki Ogawa
发明人： Hideki Sato , Hiroyuki Ogawa
IPC分类号： C08F2/01 , B01J8/08 , B01J19/00 , B01J19/18
CPC分类号： C08F2/01 , B01J8/0065 , B01J8/1827 , B01J8/245 , B01J8/28 , B01J8/34 , B01J8/386 , B01J8/44
摘要： An olefin polymerization reactor according to the present invention comprises: a vertically extending cylinder; a decreasing diameter portion on the cylinder, having an inside diameter that decreases progressively downward, and having a gas inlet orifice at a bottom end thereof; and a plurality of through holes passing through from an outside surface towards an inside surface of the decreasing diameter portion. Inside a reaction zone enclosed by an inside surface of the decreasing diameter portion and an inside surface above the decreasing diameter portion of the cylinder, a spouted-fluidized bed or a spouted bed is formed.
摘要翻译：根据本发明的烯烃聚合反应器包括：垂直延伸的气缸; 圆柱体上的直径减小部分，具有逐渐向下减小的内径，并且在其底端具有气体入口孔; 以及从所述直径减小部分的外表面向内表面穿过的多个通孔。在由减径部分的内表面和气缸的直径减小部分之上的内表面包围的反应区内形成喷射流化床或喷射床。

66. 发明授权

US08112209B2 Vehicle driving force control device 有权
标题翻译：车辆驱动力控制装置
公开(公告)号：US08112209B2
公开(公告)日：2012-02-07
申请号：US12525829
申请日：2008-03-10
申请人： Hiroyuki Ogawa , Kenji Arai
发明人： Hiroyuki Ogawa , Kenji Arai
IPC分类号： G06F19/00
CPC分类号： F02D29/02 , B60W10/06 , B60W10/11 , B60W30/188 , B60W30/19 , B60W2510/1015 , B60W2540/103 , B60W2710/0677 , B60W2710/1061 , F02D41/023 , F02D41/10 , F02D2250/21 , F16H59/18 , F16H59/42 , F16H63/502 , Y10T477/75 , Y10T477/755 , Y10T477/816
摘要： A vehicle driving force control device including an input shaft rotation number sensor which detects a transmission input shaft rotation number to be input from an engine to an automatic transmission, an accelerator opening sensor which detects accelerator opening, a TCU for calculating a required output of the automatic transmission based on the transmission input shaft rotation number and the accelerator opening, and an electronic control unit which controls the engine and the automatic transmission based on the required output. The TCU sets the required output to a constant value regardless of the transmission input shaft rotation number when the accelerator opening is not larger than a predetermined value, and sets to increase or decrease the required output according to increase and decrease of the transmission input shaft rotation number when the accelerator opening is larger than the predetermined value.
摘要翻译：一种车辆驱动力控制装置，包括检测从发动机输入到自动变速器的变速器输入轴转速的输入轴转速传感器，检测加速器开度的加速器开度传感器，用于计算所需输出的所需输出的TCU 基于变速器输入轴转速和加速器开度的自动变速器，以及基于所需输出来控制发动机和自动变速器的电子控制单元。当加速器开度不大于预定值时，TCU将所需输出设置为恒定值，而不管变速器输入轴转速如何，根据变速器输入轴转速的增减来设定要求的输出当加速器开度大于预定值时的数量。

67. 发明申请

US20110227087A1 SUBSTRATE FOR DISPLAY DEVICE, AND DISPLAY DEVICE 审中-公开
标题翻译：用于显示装置的基板和显示装置
公开(公告)号：US20110227087A1
公开(公告)日：2011-09-22
申请号：US13130552
申请日：2009-11-19
申请人： Hiroyuki Moriwaki , Kouhei Tanaka , Hiroyuki Ogawa
发明人： Hiroyuki Moriwaki , Kouhei Tanaka , Hiroyuki Ogawa
IPC分类号： H01L27/06
CPC分类号： H01L27/3265 , G02F1/13318 , G02F1/136213 , G02F2201/40 , H01L27/3276
摘要： Disclosed is a display device substrate and a display device in which a peripheral circuit is provided in a frame region that can achieve a higher aperture ratio while suppressing the production cost. The display device substrate includes a peripheral circuit provided in a frame region, a first pixel auxiliary capacitance, and a thin film transistor. The first pixel auxiliary capacitance includes an upper electrode and a lower electrode. The peripheral circuit includes wirings. The thin film transistor includes a gate electrode. The upper electrode and the lower electrode are disposed above the gate electrode, and formed of the same material as the wirings.
摘要翻译：公开了一种显示装置基板和显示装置，其中外围电路设置在能够在抑制制造成本的同时实现更高的开口率的框架区域中。显示装置基板包括设置在框架区域中的外围电路，第一像素辅助电容和薄膜晶体管。第一像素辅助电容包括上电极和下电极。外围电路包括布线。薄膜晶体管包括栅电极。上电极和下电极设置在栅电极上方，并由与布线相同的材料形成。

68. 发明申请

US20110127133A1 TWIN-CLUTCH DEVICE 有权
标题翻译：双离合器件
公开(公告)号：US20110127133A1
公开(公告)日：2011-06-02
申请号：US13002853
申请日：2009-07-08
申请人： Hiroyuki Ogawa , Akira Murakami
发明人： Hiroyuki Ogawa , Akira Murakami
IPC分类号： F16D37/02
CPC分类号： F16D37/02 , Y10T74/19228
摘要： A twin-clutch device that selectively transmits torque from a driving wheel to a first driven wheel and/or a second driven wheel is provided. The first and second driven wheels are arranged respectively on both sides of the driving wheel, a functional fluid that decreases its flowability as an applied stimulus is increased and that increases its flowability as the applied stimulus is reduced fills gaps between the driving wheel and the first and second driven wheels, the driving wheel includes a stimulus generating member electrically controlled to generate a stimulus, and flowability of the functional fluid between the driving wheel and one of the first and second driven wheels is decreased with an increase in stimulus applied to the functional fluid by the stimulus generating member to couple the driving wheel to the one of the first and second driven wheels, thus allowing torque transmission therebetween.
摘要翻译：提供了一种选择性地将扭矩从驱动轮传递到第一从动轮和/或第二从动轮的双离合器装置。第一和第二从动轮分别布置在驱动轮的两侧，功能流体随着施加的刺激增加而降低其流动性，并且随着施加的刺激被减少而增加其流动性填充驱动轮和第一驱动轮之间的间隙和第二从动轮，所述驱动轮包括电控制的刺激产生构件以产生刺激，并且所述驱动轮与所述第一和第二从动轮中的一个之间的功能流体的流动性随着对所述功能的刺激的增加而减小通过所述刺激产生构件将所述驱动轮联接到所述第一和第二从动轮中的一个，从而允许其间的扭矩传递。

69. 发明申请

US20110037116A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110037116A1
公开(公告)日：2011-02-17
申请号：US12911380
申请日：2010-10-25
申请人： Hiroyuki Ogawa , Hideyuki Kojima , Taiji Ema
发明人： Hiroyuki Ogawa , Hideyuki Kojima , Taiji Ema
IPC分类号： H01L29/788
CPC分类号： H01L27/105 , H01L27/11526 , H01L27/11531 , H01L27/11548
摘要： The method of manufacturing a semiconductor device, including a first region where a transistor including a gate electrode of a stacked structure is formed, a second region where a transistor including a gate electrode of a single-layer structure is formed, and a third region positioned in a boundary part between the first region and the second region, includes: depositing a first conductive film, patterning the first conductive film in the first region and the third region so that the outer edge is positioned in the third region, depositing the second conductive film, patterning the second conductive film to form a control gate in the first region while leaving the second conductive film, covering the second region and having the inner edge positioned inner of the outer edge of the first conductive film, and patterning the second conductive film in the second region to form the gate electrode.
摘要翻译：制造半导体器件的方法包括形成包括层叠结构的栅电极的晶体管的第一区域，形成包括单层结构的栅电极的晶体管的第二区域和位于在第一区域和第二区域之间的边界部分中包括：沉积第一导电膜，使第一区域和第三区域中的第一导电膜图形化，使得外边缘位于第三区域中，沉积第二导电膜膜，图案化第二导电膜，以在离开第二导电膜的同时在第一区域中形成控制栅极，覆盖第二区域并且使内边缘位于第一导电膜的外边缘的内侧，并且使第二导电膜在第二区域中形成栅电极。

70. 发明申请

US20100304539A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100304539A1
公开(公告)日：2010-12-02
申请号：US12785964
申请日：2010-05-24
申请人： Katsuyoshi Matsuura , Masayoshi Asano , Hiroyuki Ogawa , Myounggoo Lee
发明人： Katsuyoshi Matsuura , Masayoshi Asano , Hiroyuki Ogawa , Myounggoo Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/66659 , H01L27/1085 , H01L27/10861 , H01L27/10894 , H01L28/91 , H01L29/105 , H01L29/66537 , H01L29/7835
摘要： A method for manufacturing a semiconductor device includes preparing a semiconductor substrate having a first region of a first electrical conduction type as a part of a surface layer of the semiconductor substrate and a first gate electrode and a capacitor structure, the first gate electrode and the capacitor structure being disposed on the first region; forming a first insulating film covering the first gate electrode and the capacitor structure, the first insulating film being covering the surface of the semiconductor substrate; implanting a first impurity of a second electrical conduction type into the semiconductor substrate, so as to form a region of the second electrical conduction type in each of a second region and a third region, the second region being a region between the first gate electrode and the capacitor structure, the third region being a region opposite to the capacitor structure with the first gate electrode therebetween.
摘要翻译：一种制造半导体器件的方法包括制备具有第一导电类型的第一区域作为半导体衬底的表面层的一部分的半导体衬底和第一栅电极和电容器结构，第一栅电极和电容器结构设置在第一区域上; 形成覆盖所述第一栅电极和所述电容器结构的第一绝缘膜，所述第一绝缘膜覆盖所述半导体基板的表面; 将第二导电类型的第一杂质注入到所述半导体衬底中，以便在第二区域和第三区域中的每一个中形成所述第二导电类型的区域，所述第二区域是所述第一栅电极和电容器结构，第三区域是与电容器结构相反的区域，其间具有第一栅电极。

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