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    • 61. 发明申请
    • Method for achieving a durable two-tone finish on a vehicle
    • 在车辆上实现持久双色调的方法
    • US20060045965A1
    • 2006-03-02
    • US10929238
    • 2004-08-30
    • Jun Lin
    • Jun Lin
    • B05D5/06
    • B05D7/577B05D1/32B05D5/066B05D7/14B05D7/532B05D7/536B05D7/572B05D7/576
    • A method for producing a multilayer two-tone finish on a substrate, such as automobile and truck bodies or parts thereof, by applying an improved clearcoat composition as the exterior most coating on top of the accent color and main body color basecoats. The clearcoat composition has improved compatibility over both waterborne and solventborne basecoats. The composition includes a film-forming binder comprising a carbamate material, a curing agent, typically a monomeric melamine curing agent, and a hydroxy functional silane component. When used as a clearcoat over a standard pigmented basecoat, the resulting coating provides a substantially durable and wrinkle free appearance and excellent adhesion to waterborne and solventborne basecoats, baked or unbaked.
    • 通过将改良的透明涂料组合物作为重要颜色和主体颜色底涂层之上的外部涂层组合物,在诸如汽车和卡车车身或其部件的基材上生产多层双色调整方法。 透明涂料组合物具有改善的水性和溶剂型底漆的相容性。 组合物包括含有氨基甲酸酯材料,固化剂,通常为单体三聚氰胺固化剂和羟基官能的硅烷组分的成膜粘合剂。 当用作标准着色底漆时的透明涂层时,所得涂层提供基本上耐用且无皱纹的外观和对水性和溶剂型底漆具有优异的粘合性,烘烤或未烘烤。
    • 65. 发明授权
    • Semiconductor device and its manufacture
    • 半导体器件及其制造
    • US06835976B2
    • 2004-12-28
    • US10457535
    • 2003-06-10
    • Jun LinHiroshi MinakataAkihiro ShimadaToshiya SuzukiDaisuke Matsunaga
    • Jun LinHiroshi MinakataAkihiro ShimadaToshiya SuzukiDaisuke Matsunaga
    • H01L27108
    • H01L28/91H01L27/10852H01L28/55H01L28/60
    • A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thoreon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.
    • 制造半导体器件的方法具有以下步骤:(a)在半导体衬底上形成由稀有金属制成的下电极; (b)在下电极上沉积由高介电材料或铁电氧化物制成的电容器电介质膜; (c)在电容器电介质膜上形成层压层,所述层叠层包括由稀有金属制成的上电极层和具有或不具有SiO 2掩模层的粘合剂层; (d)图案化层叠层; (e)化学处理图案化的层压层以去除层压层的表面层; 和(f)在半导体衬底上形成层间绝缘膜,覆盖化学处理层压层。 可以增加稀土金属层与绝缘层之间的粘附力。
    • 68. 发明授权
    • Semiconductor device and its manufacture
    • 半导体器件及其制造
    • US06602756B2
    • 2003-08-05
    • US09735477
    • 2000-12-14
    • Jun LinHiroshi MinakataAkihiro ShimadaToshiya SuzukiDaisuke Matsunaga
    • Jun LinHiroshi MinakataAkihiro ShimadaToshiya SuzukiDaisuke Matsunaga
    • H01L2120
    • H01L28/91H01L27/10852H01L28/55H01L28/60
    • A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thereon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.
    • 制造半导体器件的方法具有以下步骤:(a)在半导体衬底上形成由稀有金属制成的下电极; (b)在下电极上沉积由高介电材料或铁电氧化物制成的电容器电介质膜; (c)在电容器电介质膜上形成叠层,层叠层包括由稀有金属制成的上电极层和其上具有或不具有SiO 2掩模层的粘合剂层; (d)图案化层叠层; (e)化学处理图案化的层压层以去除层压层的表面层; 和(f)在半导体衬底上形成层间绝缘膜,覆盖化学处理层压层。 可以增加稀土金属层与绝缘层之间的粘附力。