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61. 发明授权

US06610581B1 Method of forming isolation film in semiconductor device 有权
标题翻译：在半导体器件中形成隔离膜的方法
公开(公告)号：US06610581B1
公开(公告)日：2003-08-26
申请号：US09584850
申请日：2000-06-01
申请人： Yasuhiro Takeda , Hideaki Fujiwara
发明人： Yasuhiro Takeda , Hideaki Fujiwara
IPC分类号： H01L218238
CPC分类号： H01L21/76202 , H01L21/76205
摘要： There is disclosed a method of forming an isolation film in a semiconductor device, the method including the steps of: forming a silicon oxide film and a silicon nitride film in that order on a silicon substrate, using a resist pattern as a mask, etching the silicon nitride film and silicon oxide film, and forming trenches in the substrate. In the substrate, the respective trenches form a region in which isolation films are to be formed, and the region between the trenches forms an active region. In this case, each dimension is set so that a ratio W/t of width W to thickness t of the patterned silicon nitride film is 3.8 or more. Subsequently, by removing the resist pattern, subsequently using the silicon nitride film as the mask, and performing thermal oxidation at a temperature of 1050° C. to 1150° C. in an oxygen atmosphere, an isolation film is formed in the trench.
摘要翻译：公开了在半导体器件中形成隔离膜的方法，该方法包括以下步骤：在硅衬底上依次形成氧化硅膜和氮化硅膜，使用抗蚀剂图案作为掩模，蚀刻氮化硅膜和氧化硅膜，并在衬底中形成沟槽。在衬底中，相应的沟槽形成其中将形成隔离膜的区域，并且沟槽之间的区域形成有源区。在这种情况下，每个尺寸被设定为使得图案化氮化硅膜的宽度W与厚度t的比W / t为3.8以上。随后，通过去除抗蚀剂图案，随后使用氮化硅膜作为掩模，并且在氧气氛中在1050℃至1150℃的温度下进行热氧化，在沟槽中形成隔离膜。

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